JPH02224404A - Magnetostatic wave device - Google Patents
Magnetostatic wave deviceInfo
- Publication number
- JPH02224404A JPH02224404A JP4473389A JP4473389A JPH02224404A JP H02224404 A JPH02224404 A JP H02224404A JP 4473389 A JP4473389 A JP 4473389A JP 4473389 A JP4473389 A JP 4473389A JP H02224404 A JPH02224404 A JP H02224404A
- Authority
- JP
- Japan
- Prior art keywords
- magnetostatic wave
- parts
- wave device
- substrate
- yig
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000000758 substrate Substances 0.000 claims abstract description 26
- 230000001154 acute effect Effects 0.000 claims abstract description 7
- 230000000644 propagated effect Effects 0.000 claims abstract description 4
- 239000011358 absorbing material Substances 0.000 description 4
- 239000002223 garnet Substances 0.000 description 4
- 229910052688 Gadolinium Inorganic materials 0.000 description 2
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 2
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 2
- UIWYJDYFSGRHKR-UHFFFAOYSA-N gadolinium atom Chemical compound [Gd] UIWYJDYFSGRHKR-UHFFFAOYSA-N 0.000 description 2
- 229910052733 gallium Inorganic materials 0.000 description 2
- 239000010409 thin film Substances 0.000 description 2
- 101000574352 Mus musculus Protein phosphatase 1 regulatory subunit 17 Proteins 0.000 description 1
- 230000002238 attenuated effect Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 229910052742 iron Inorganic materials 0.000 description 1
- MTRJKZUDDJZTLA-UHFFFAOYSA-N iron yttrium Chemical compound [Fe].[Y] MTRJKZUDDJZTLA-UHFFFAOYSA-N 0.000 description 1
- 230000003068 static effect Effects 0.000 description 1
- 229910052727 yttrium Inorganic materials 0.000 description 1
- VWQVUPCCIRVNHF-UHFFFAOYSA-N yttrium atom Chemical compound [Y] VWQVUPCCIRVNHF-UHFFFAOYSA-N 0.000 description 1
Landscapes
- Control Of Motors That Do Not Use Commutators (AREA)
- Surface Acoustic Wave Elements And Circuit Networks Thereof (AREA)
Abstract
Description
【発明の詳細な説明】
（産業上の利用分野）
この発明は静磁波装置に関し、特にたとえばフィルタや
デイレイラインとして用いられる、静磁波装置に関する
。DETAILED DESCRIPTION OF THE INVENTION (Industrial Application Field) The present invention relates to a magnetostatic wave device, and particularly to a magnetostatic wave device used as a filter or a delay line, for example.
（従来技術）
第４Ａ図および第４Ｂ図は、それぞれ、従来の静磁波装
置の一例を示し、第４Ａ図はその平面図であり、第４Ｂ
図はその正面図である。この静磁波装置１は、矩形状の
ＧＧＧ （ガドリニウム、ガリウム、ガーネット）基板
２とその上に積層されたＹＩＧ （イツトリウム、アイ
アン、ガーネット）薄膜３とからなるＹＩＧ基板４を含
み、このＹ１Ｇ基板４上の長平方向の両端部には、そこ
を横切るようにして、入出力用トランスデユーサとして
の線状のアンテナ５および６が、それぞれ設けられてい
る。(Prior art) Fig. 4A and Fig. 4B respectively show an example of a conventional magnetostatic wave device, Fig. 4A is a plan view thereof, and Fig. 4B is a plan view thereof.
The figure is its front view. This magnetostatic wave device 1 includes a YIG substrate 4 consisting of a rectangular GGG (gadolinium, gallium, garnet) substrate 2 and a YIG (yttrium, iron, garnet) thin film 3 laminated thereon. Linear antennas 5 and 6 as input/output transducers are provided at both ends in the upper elongated direction, respectively, so as to traverse the ends.
このような静磁波装置１は、表面波装置と同様にトラン
スバーサル型の信号処理素子であるので、信号の伝搬路
の端すなわちＹＩＧ基板４の端での反射波が通過域特性
に与える影響が問題となる。Since such a magnetostatic wave device 1 is a transversal type signal processing element like a surface wave device, the reflected wave at the end of the signal propagation path, that is, the end of the YIG substrate 4 has no influence on the passband characteristics. It becomes a problem.
そこで、このような反射波のレベルを小さくするために
、第５図に示すように、ＹＩＧ基板４の端部に傾斜部７
を形成したり、第６図に示すように、ＹＩＧ基板４の端
部に静磁波吸収材８を形成したりしていた。Therefore, in order to reduce the level of such reflected waves, as shown in FIG.
or, as shown in FIG. 6, a magnetostatic wave absorbing material 8 was formed at the end of the YIG substrate 4.
（発明が解決しようとする課題）
ところが、ＹＩＧ基板の端部に傾斜部を形成したり、Ｙ
ＩＧ基板の端部に静磁波吸収材を形成したりしても、通
過帯域でのリップルを十分に低減することができなかっ
た。そのため、このような静磁波装置は、フィルタやデ
イレイラインとして用いるには好ましくない。(Problem to be solved by the invention) However, it is difficult to form an inclined portion at the end of a YIG substrate,
Even if a magnetostatic wave absorbing material is formed at the end of the IG substrate, ripples in the passband cannot be sufficiently reduced. Therefore, such a magnetostatic wave device is not preferable for use as a filter or a delay line.
それゆえに、この発明の主たる目的は、通過帯域でのリ
ップル特性が良好である、静磁波装置を提供することで
ある。Therefore, the main object of the present invention is to provide a magnetostatic wave device that has good ripple characteristics in the passband.
（課題を解決するための手段）
この発明は、ＹＩＧ基板において、静磁波が伝搬される
方向の端部に２つの傾斜部を形成し、２つの傾斜部で形
成される角度を鋭角にした、静磁波装置である。(Means for Solving the Problems) This invention provides a YIG substrate in which two inclined parts are formed at the end in the direction in which the magnetostatic waves propagate, and the angle formed by the two inclined parts is made acute. It is a magnetostatic wave device.
（作用）
ＹＩＧ基板の端部において、２つの傾斜部に挟まれた部
分に静磁波が集束される。そのため、静磁波の反射波に
よるリップルが減衰される。(Function) At the end of the YIG substrate, a magnetostatic wave is focused on a portion sandwiched between two inclined portions. Therefore, ripples due to reflected waves of magnetostatic waves are attenuated.
（発明の効果）
この発明によれば、減衰帯域におけるリップル特性が良
好である静磁波装置が得られる。(Effects of the Invention) According to the present invention, a magnetostatic wave device having good ripple characteristics in the attenuation band can be obtained.
この発明の上述の目的、その他の目的、特徴および利点
は、以下の実施例の詳細な説明から一層明らかとなろう
。The above objects, other objects, features and advantages of the present invention will become more apparent from the detailed description of the following embodiments.
（実施例）
第１Ａ図はこの発明の一実施例を示す平面図であり、第
１Ｂ図はその正面図である。この静磁波装置１０は、短
冊状のＹＩＧ基板１２を含む。このＹＩＧ基板１２は、
短冊状のＧＧＧ （ガドリニウム、ガリウム、ガーネッ
ト）基板１４を含み、ＧＧＧ基板１４の上には、ＹＩＧ
（イツトリウムアイアン、ガーネット）薄膜１６が形成
されている。(Embodiment) FIG. 1A is a plan view showing an embodiment of the present invention, and FIG. 1B is a front view thereof. This magnetostatic wave device 10 includes a YIG substrate 12 in the form of a strip. This YIG substrate 12 is
It includes a strip-shaped GGG (gadolinium, gallium, garnet) substrate 14, and on the GGG substrate 14, YIG
(yttrium iron, garnet) thin film 16 is formed.
ＹＴＧ基板１２の長手方向の両端には、それぞれ２つの
傾斜部１２ａおよび１２ｂが形成される。Two inclined portions 12a and 12b are formed at both longitudinal ends of the YTG substrate 12, respectively.
これらの傾斜部１２ａ、１２ｂによって形成される端部
１２ｃの角度は、鋭角になるように形成される。The angle of the end portion 12c formed by these inclined portions 12a and 12b is formed to be an acute angle.
さらに、このＹＩＧ基板１２の上には、その長手方向の
両端部を横切るようにして、入出力用トランスデユーサ
としての線状のアンテナ１８ａおよび１８ｂが、それぞ
れ設けられている。Furthermore, on this YIG substrate 12, linear antennas 18a and 18b are provided as input/output transducers, respectively, so as to cross both ends of the YIG substrate 12 in the longitudinal direction.
この静磁波装置１０では、静磁波がＹＩＧ基板１２の長
手方向に伝搬される。この場合、ＹＩＧ基板１２の両端
部が鋭角に形成されているので、静磁波は、２つの傾斜
部１２ａ、１２ｂで反射しながらその両端部に集束され
、出力側のアンテナ１８ｂにほとんど入らない。そのた
め、この静磁波装置１０では、通過帯域でのリップル特
性が良好である。In this magnetostatic wave device 10, magnetostatic waves are propagated in the longitudinal direction of the YIG substrate 12. In this case, since both ends of the YIG substrate 12 are formed at acute angles, the static magnetic waves are reflected by the two inclined parts 12a and 12b and focused on the ends, and hardly enter the antenna 18b on the output side. Therefore, this magnetostatic wave device 10 has good ripple characteristics in the passband.
また、この静磁波装置１０は、第２図に示すようにＹＩ
Ｇ基板の一方側部の端部を傾斜した静磁波装置に比べて
、その端部の長さを短くすることができる。In addition, this magnetostatic wave device 10 has YI as shown in FIG.
Compared to a magnetostatic wave device in which the end of one side of the G substrate is inclined, the length of the end can be shortened.
なお、静磁波の反射波を効率的に吸収するために、この
静磁波装置ＩＯのＹＩＧ基板１２の両端部１２ｃの頂点
付近に、静磁波吸収材が設けられてもよい。Note that, in order to efficiently absorb reflected waves of magnetostatic waves, a magnetostatic wave absorbing material may be provided near the vertices of both ends 12c of the YIG substrate 12 of the magnetostatic wave device IO.
さらに、第３図に示すように、ＹＩＧ基板１２の両端部
を含む部分に、静磁波吸収材２０を設けてもよい。この
ようにすれば、静磁波の反射波をさらに効率よく吸収す
ることができ、静磁波装置ｌＯの通過帯域でのリップル
特性をさらに良好なものとすることができる。Furthermore, as shown in FIG. 3, a magnetostatic wave absorbing material 20 may be provided in a portion including both ends of the YIG substrate 12. In this way, the reflected wave of the magnetostatic wave can be absorbed more efficiently, and the ripple characteristics in the passband of the magnetostatic wave device IO can be made even better.
第１Ａ図および第１Ｂ図はそれぞれこの発明の一実施例
を示し、第１Ａ図はその平面図であり、第１Ｂ図はその
正面図である。
第２図はこの発明の他の実施例を示す要部平面図である
。
第３図はＹＩＧ基板の一方側部の一部を傾斜した静磁波
装置を示す要部平面図である。
第４Ａ図および第４Ｂ図は、それぞれ、この発明の背景
となる従来の静磁波装置の一例を示し、第４Ａ図はその
平面図であり、第４Ｂ図はその正面図である。
第５図および第６図は、それぞれ、従来の静磁波装置の
他の例を示す平面図である。
図において、１０は静磁波装置、１２はＹＩＧ基板を示
す。
特許出願人 株式会社 村田製作所
代理人 弁理士 岡 １） 全 啓
第１Ａ図
Ｉｔ）Ｄ
第４８図
第
図1A and 1B each show an embodiment of the present invention, with FIG. 1A being a plan view thereof and FIG. 1B being a front view thereof. FIG. 2 is a plan view of main parts showing another embodiment of the present invention. FIG. 3 is a plan view of a main part showing a magnetostatic wave device in which a part of one side of a YIG substrate is inclined. 4A and 4B respectively show an example of a conventional magnetostatic wave device which is the background of the present invention, FIG. 4A is a plan view thereof, and FIG. 4B is a front view thereof. FIGS. 5 and 6 are plan views showing other examples of conventional magnetostatic wave devices, respectively. In the figure, 10 indicates a magnetostatic wave device, and 12 indicates a YIG substrate. Patent Applicant Murata Manufacturing Co., Ltd. Representative Patent Attorney Oka 1) Zenkei Figure 1A It) D Figure 48
Claims (1)
に２つの傾斜部を形成し、２つの前記傾斜部で形成され
る角度を鋭角にした、静磁波装置。A magnetostatic wave device, in which a YIG substrate has two inclined parts formed at the ends in the direction in which magnetostatic waves are propagated, and the angle formed by the two inclined parts is an acute angle.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP4473389A JPH02224404A (en) | 1989-02-23 | 1989-02-23 | Magnetostatic wave device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP4473389A JPH02224404A (en) | 1989-02-23 | 1989-02-23 | Magnetostatic wave device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH02224404A true JPH02224404A (en) | 1990-09-06 |
Family
ID=12699648
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP4473389A Pending JPH02224404A (en) | 1989-02-23 | 1989-02-23 | Magnetostatic wave device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH02224404A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US11894502B2 (en) | 2018-03-30 | 2024-02-06 | Dowa Electronics Materials Co., Ltd. | Method of manufacturing semiconductor optical device and intermediate article of semiconductor optical device |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5921545U (en) * | 1982-07-30 | 1984-02-09 | 松下電工株式会社 | polarized electromagnetic relay |
| JPS6294001A (en) * | 1985-10-21 | 1987-04-30 | Mitsubishi Electric Corp | Resistive terminator for magnetostatic wave |
-
1989
- 1989-02-23 JP JP4473389A patent/JPH02224404A/en active Pending
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5921545U (en) * | 1982-07-30 | 1984-02-09 | 松下電工株式会社 | polarized electromagnetic relay |
| JPS6294001A (en) * | 1985-10-21 | 1987-04-30 | Mitsubishi Electric Corp | Resistive terminator for magnetostatic wave |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US11894502B2 (en) | 2018-03-30 | 2024-02-06 | Dowa Electronics Materials Co., Ltd. | Method of manufacturing semiconductor optical device and intermediate article of semiconductor optical device |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US4782312A (en) | Mode selective magnetostatic wave resonators | |
| CA1163334A (en) | Magnetostatic wave device containing attenuation means and the way of making it | |
| JP2570675B2 (en) | Magnetostatic wave device | |
| JPH02224404A (en) | Magnetostatic wave device | |
| EP0658978B1 (en) | Magnetostatic wave device | |
| US4985709A (en) | Magnetostatic wave device | |
| JPH0727683Y2 (en) | Magnetostatic wave device | |
| JP2501877Y2 (en) | Magnetostatic wave device | |
| US4450420A (en) | Surface acoustic wave filter | |
| JP2636580B2 (en) | Magnetostatic wave device | |
| JPH089925Y2 (en) | Magnetostatic wave device | |
| KR100192634B1 (en) | Magnetostatic wave device having disk shape | |
| RU2804377C1 (en) | Magnetoelastic wave circulator | |
| JPH02126714A (en) | Static magnetic wave device | |
| JPH10135709A (en) | Magnetostatic wave device | |
| JP2504976Y2 (en) | Magnetostatic wave device | |
| JPH104301A (en) | Magnetostatic wave device | |
| SU1737702A1 (en) | Device of magnetostatic waves | |
| JPH0728724Y2 (en) | Magnetostatic wave device | |
| JPH06196904A (en) | Magnetostatic wave filter | |
| JP3419056B2 (en) | Magnetostatic wave device | |
| JPH09284011A (en) | Magnetostatic wave device | |
| JPH03259601A (en) | Magnetostatic wave device | |
| JPH03210802A (en) | Msw filter | |
| JPH08242105A (en) | Static magnetic wave device |