JPH02224363A - Pin grid array integrated circuit case - Google Patents
Pin grid array integrated circuit caseInfo
- Publication number
- JPH02224363A JPH02224363A JP4716289A JP4716289A JPH02224363A JP H02224363 A JPH02224363 A JP H02224363A JP 4716289 A JP4716289 A JP 4716289A JP 4716289 A JP4716289 A JP 4716289A JP H02224363 A JPH02224363 A JP H02224363A
- Authority
- JP
- Japan
- Prior art keywords
- pins
- integrated circuit
- grid array
- pin
- case
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000000034 method Methods 0.000 abstract 1
- 238000004806 packaging method and process Methods 0.000 description 2
- FGRBYDKOBBBPOI-UHFFFAOYSA-N 10,10-dioxo-2-[4-(N-phenylanilino)phenyl]thioxanthen-9-one Chemical compound O=C1c2ccccc2S(=O)(=O)c2ccc(cc12)-c1ccc(cc1)N(c1ccccc1)c1ccccc1 FGRBYDKOBBBPOI-UHFFFAOYSA-N 0.000 description 1
- HQZJODBJOBTCPI-VHCPEVEQSA-N [(3ar,4s,6ar,8r,9s,9ar,9br)-8-hydroxy-3,6-dimethylidene-2-oxospiro[3a,4,5,6a,7,8,9a,9b-octahydroazuleno[4,5-b]furan-9,2'-oxirane]-4-yl] (2s)-2-methyloxirane-2-carboxylate Chemical group O([C@@H]1[C@H]2C(=C)C(=O)O[C@H]2[C@@H]2[C@@]3(OC3)[C@H](O)C[C@H]2C(=C)C1)C(=O)[C@]1(C)CO1 HQZJODBJOBTCPI-VHCPEVEQSA-N 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- GNWCEVOXWDZRJH-UHFFFAOYSA-N repin Natural products CC1(CO1)C(=O)OC2CC3C(OC(=O)C3=C)C4C(CC(O)C45CO5)C2=C GNWCEVOXWDZRJH-UHFFFAOYSA-N 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
Abstract
Description
【発明の詳細な説明】
〔産業上の利用分野〕
本発明はピングリッドアレイ集積回路ケース、特に、二
段実装用のピングリッドアレイ集積回路ケースに関する
。DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to a pin grid array integrated circuit case, particularly to a pin grid array integrated circuit case for two-stage mounting.
従来のピングリッドアレイ集積回路ケースについて図面
を参照して詳細に説明する。A conventional pin grid array integrated circuit case will be described in detail with reference to the drawings.
第3図は(a)、(b)従来のピングリッドアレイ集積
回路ケースの一例を含む断面図および平面図である。FIGS. 3(a) and 3(b) are a sectional view and a plan view including an example of a conventional pin grid array integrated circuit case.
ケース10はプリント基板9に一段づつ平面的に並べら
れ、実装されている。The cases 10 are arranged and mounted on the printed circuit board 9 one step at a time.
上述した従来のピングリッドアレイ集積回路ケースは、
実装密度が低く、信号遅延時間の差が無視できなくなる
という欠点があった。The conventional pin grid array integrated circuit case mentioned above is
The disadvantage was that the packaging density was low and the difference in signal delay time could not be ignored.
本発明のピングリッドアレイ集積回路ケースは、ピンと
同径同間隔の穴を隣り合うピンと同距離かつピンを収り
囲むように穿孔し、前記穴に同種のピングリッドアレイ
集積回路ケースのピンを貫通可能としたものである。In the pin grid array integrated circuit case of the present invention, holes with the same diameter and the same spacing as the pins are bored at the same distance as the adjacent pins and so as to enclose the pins, and the pins of the pin grid array integrated circuit case of the same type are penetrated into the holes. This made it possible.
次に、本発明の実施例について図面を参照して説明する
。Next, embodiments of the present invention will be described with reference to the drawings.
第1図(a)、(b)は本発明の一実施例を゛示す断面
図および平面図である。FIGS. 1(a) and 1(b) are a sectional view and a plan view showing an embodiment of the present invention.
第1図(a)、(b)に示すピングリッドアレイ集積回
路ケースは、ピン3と同径同間隔の穴2が、ピン3を囲
むように開けらている。In the pin grid array integrated circuit case shown in FIGS. 1(a) and 1(b), holes 2 having the same diameter and the same spacing as the pins 3 are formed so as to surround the pins 3.
第2図(a)、(b)は本発明の一使用例を示す断面図
および平面図である。FIGS. 2(a) and 2(b) are a sectional view and a plan view showing an example of use of the present invention.
2段目のケースIBは、1段目のケースIAよリピン3
と貫通孔2の距離分ずらして実装されている。これによ
り、2段実装が可能となる。The second case IB is repin 3 from the first case IA.
and are mounted shifted by the distance of the through hole 2. This allows two-stage mounting.
本発明のピングリッドアレイ集積回路ケースは、実装密
度が倍増し、信号遅延時間の差を無視できるという効果
がある。The pin grid array integrated circuit case of the present invention has the effect of doubling the packaging density and making the difference in signal delay times negligible.
・・・・・・絶縁基板、5・・・・・・集積回路、6・
・・・・・カバー、7・・・・・・接続線、8・・・・
・・導体パターン、9・・・・・・プリント基板。...Insulating substrate, 5...Integrated circuit, 6.
...Cover, 7...Connection line, 8...
...Conductor pattern, 9...Printed circuit board.
Claims (1)
を取り囲むように穿孔し、前記穴に同種のピングリッド
アレイ集積回路ケースのピンを貫通可能としたことを特
徴とするピングリッドアレイ集積回路ケース。A pin grid array integrated circuit characterized in that holes with the same diameter and the same spacing as the pins are bored at the same distance as adjacent pins and so as to surround the pins, and the pins of a pin grid array integrated circuit case of the same type can pass through the holes. Case.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP4716289A JPH02224363A (en) | 1989-02-27 | 1989-02-27 | Pin grid array integrated circuit case |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP4716289A JPH02224363A (en) | 1989-02-27 | 1989-02-27 | Pin grid array integrated circuit case |
Publications (1)
Publication Number | Publication Date |
---|---|
JPH02224363A true JPH02224363A (en) | 1990-09-06 |
Family
ID=12767382
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP4716289A Pending JPH02224363A (en) | 1989-02-27 | 1989-02-27 | Pin grid array integrated circuit case |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPH02224363A (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5442134A (en) * | 1992-08-20 | 1995-08-15 | Kabushiki Kaisha Toyoda Jidoshokki Seisakusho | Lead structure of semiconductor device |
-
1989
- 1989-02-27 JP JP4716289A patent/JPH02224363A/en active Pending
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5442134A (en) * | 1992-08-20 | 1995-08-15 | Kabushiki Kaisha Toyoda Jidoshokki Seisakusho | Lead structure of semiconductor device |
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