JPH0221173B2 - - Google Patents
Info
- Publication number
- JPH0221173B2 JPH0221173B2 JP55160803A JP16080380A JPH0221173B2 JP H0221173 B2 JPH0221173 B2 JP H0221173B2 JP 55160803 A JP55160803 A JP 55160803A JP 16080380 A JP16080380 A JP 16080380A JP H0221173 B2 JPH0221173 B2 JP H0221173B2
- Authority
- JP
- Japan
- Prior art keywords
- acoustic wave
- surface acoustic
- wave element
- piezoelectric substrate
- electrode
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 238000010897 surface acoustic wave method Methods 0.000 claims description 59
- 239000000758 substrate Substances 0.000 claims description 21
- 239000010410 layer Substances 0.000 description 13
- 239000011358 absorbing material Substances 0.000 description 7
- 239000004020 conductor Substances 0.000 description 4
- 230000000694 effects Effects 0.000 description 3
- 229910013641 LiNbO 3 Inorganic materials 0.000 description 2
- 239000000919 ceramic Substances 0.000 description 2
- 239000002131 composite material Substances 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- KXGFMDJXCMQABM-UHFFFAOYSA-N 2-methoxy-6-methylphenol Chemical compound [CH]OC1=CC=CC([CH])=C1O KXGFMDJXCMQABM-UHFFFAOYSA-N 0.000 description 1
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- 239000012790 adhesive layer Substances 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 239000005011 phenolic resin Substances 0.000 description 1
- 229920001568 phenolic resin Polymers 0.000 description 1
- 230000001902 propagating effect Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/02—Details
- H03H9/05—Holders; Supports
- H03H9/10—Mounting in enclosures
- H03H9/1064—Mounting in enclosures for surface acoustic wave [SAW] devices
- H03H9/1071—Mounting in enclosures for surface acoustic wave [SAW] devices the enclosure being defined by a frame built on a substrate and a cap, the frame having no mechanical contact with the SAW device
Description
【発明の詳細な説明】
〔発明の目的〕
（産業上の利用分野）
本発明は弾性表面波装置に係り、特に同一圧電
基板の一主面に形成された２個の弾性表面波素子
間の表面波の相互干渉を防止し得るように構成さ
れた弾性表面波装置に関するものである。[Detailed Description of the Invention] [Object of the Invention] (Industrial Field of Application) The present invention relates to a surface acoustic wave device, and in particular, to a surface acoustic wave device between two surface acoustic wave elements formed on one main surface of the same piezoelectric substrate. The present invention relates to a surface acoustic wave device configured to prevent mutual interference of surface waves.
（従来の技術）
弾性表面波装置はカラーテレビジヨン装置の
IFフイルタ（PIF）などに使用することにより、
これら装置を小型化高信頼性にすることが可能で
あり、その需要が急速に増加してきた。近年、音
声多重放送の実施と共にセパレート・キヤリア方
式がTV受像機に採用され、これに使用するサウ
ンド用IFフイルタ（SIF）を前記したPIFと同一
圧電基板上に併設する複合型の弾性表面波装置が
要望されている。(Prior art) Surface acoustic wave devices are used in color television equipment.
By using it for IF filter (PIF) etc.
These devices can be made smaller and more reliable, and the demand for them has been rapidly increasing. In recent years, with the implementation of audio multiplex broadcasting, a separate carrier system has been adopted in TV receivers, and the sound IF filter (SIF) used for this is a composite surface acoustic wave device that is installed on the same piezoelectric substrate as the above-mentioned PIF. is requested.
このような複合型の弾性表面波装置の一例を第
５図及び第６図により説明する。 An example of such a composite surface acoustic wave device will be explained with reference to FIGS. 5 and 6.
即ち、LiTaO3、LiNbO3、セラミツクスなど
からなる圧電基板２の一主面上に互いに噛み合つ
た櫛形の入力電極３と、この入力電極３に連接さ
れたシールド電極４と、このシールド電極４を介
して入力電極３に対設され、同じく互いに噛み合
つた櫛形の出力電極５とからなる例えばPIF用の
第１の弾性表面波素子１と、この第１の弾性表面
波素子とほぼ同一構造の入力電極１３、シールド
電極１４、出力電極１５とからなる例えばSIF用
の第２の弾性表面波素子１１が形成され、更にこ
れら第１の弾性表面波素子１と第２の弾性表面波
素子１１の不要反射表面波を防止するために圧電
基板２の両端面部近傍には吸音部材層６が設けら
れている。このような圧電基板２の他の主面は粗
面化されており、接着部材層７を介して外部導線
８が貫通植設されたステム９に載置固定され、こ
の外部導線８と第１の弾性表面波素子１、第２の
弾性表面波素子１１の各電極はボンデイング線１
０によつて例えば図のように導接され最後にシエ
ル１６をかぶせて気密封着され、弾性表面波装置
が完成する。 That is, on one main surface of a piezoelectric substrate 2 made of LiTaO 3 , LiNbO 3 , ceramics, etc., there are interlocking comb-shaped input electrodes 3 , a shield electrode 4 connected to the input electrode 3 , and a shield electrode 4 . A first surface acoustic wave element 1 for PIF, for example, is composed of a comb-shaped output electrode 5 which is disposed opposite to an input electrode 3 through a comb-shaped output electrode 5 which is also engaged with each other, and a surface acoustic wave element 1 having almost the same structure as this first surface acoustic wave element. For example, a second surface acoustic wave element 11 for SIF is formed, which is composed of an input electrode 13, a shield electrode 14, and an output electrode 15. In order to prevent unnecessary reflected surface waves, sound absorbing material layers 6 are provided near both end surfaces of the piezoelectric substrate 2. The other main surface of such a piezoelectric substrate 2 is roughened, and is mounted and fixed on a stem 9 through which an external conductor 8 is implanted through an adhesive member layer 7, and this external conductor 8 and the first Each electrode of the surface acoustic wave element 1 and the second surface acoustic wave element 11 is connected to the bonding wire 1.
0 as shown in the figure, and finally the shell 16 is covered and hermetically sealed to complete the surface acoustic wave device.
然るに前述のように同一の圧電基板上に周波数
帯域の異なる２個の弾性表面波素子が形成されて
いる場合、それぞれの弾性表面波素子に発生する
表面波のうちの一部は近接された２個の弾性表面
波素子の各電極間に於て相互干渉が発生し、この
表面波の相互干渉によりそれぞれの弾性表面波素
子の周波数特性を劣化させる欠点があつた。 However, as mentioned above, when two surface acoustic wave elements with different frequency bands are formed on the same piezoelectric substrate, some of the surface waves generated in each surface acoustic wave element are Mutual interference occurs between the electrodes of each surface acoustic wave element, and this mutual interference of surface waves deteriorates the frequency characteristics of each surface acoustic wave element.
（発明が解決しようとする課題）
本発明は上述の欠点を鑑みてなされたものであ
り、同一圧電基板上に相異なる周波数帯域を有す
る弾性表面波素子を２個配置した弾性表面波装置
において、表面波の相互干渉を防止することを解
決しようとすることを課題とする。(Problems to be Solved by the Invention) The present invention has been made in view of the above-mentioned drawbacks, and is directed to a surface acoustic wave device in which two surface acoustic wave elements having different frequency bands are arranged on the same piezoelectric substrate. The objective is to solve the problem of preventing mutual interference of surface waves.
（課題を解決するための手段）
上述の課題を解決するため、本発明の弾性表面
波装置は、圧電基板の主面に、第１の弾性表面波
素子と第２の弾性表面波素子との間でかつ、この
第１の弾性表面波素子とこの第２の弾性表面波素
子とのそれぞれの表面波の相互干渉を防止する吸
音部材層が設けられていることを基本構成とす
る。
(Means for Solving the Problems) In order to solve the above problems, the surface acoustic wave device of the present invention includes a first surface acoustic wave element and a second surface acoustic wave element on the main surface of a piezoelectric substrate. The basic configuration is that a sound absorbing member layer is provided between the first surface acoustic wave element and the second surface acoustic wave element to prevent mutual interference of surface waves between the elements.
（作用）
上述の構成をとることにより、第１の弾性表面
波素子と第２の弾性表面波素子とのそれぞれの表
面波のうち不要波を吸音部材層が吸収するため
に、それぞれの表面波の相互干渉を防止すること
ができる。(Function) By adopting the above configuration, the sound absorbing member layer absorbs unnecessary waves among the surface waves of the first surface acoustic wave element and the second surface acoustic wave element. Mutual interference can be prevented.
（実施例）
本発明の弾性表面波装置の一実施例について、
図面を参照して説明する。(Example) Regarding an example of the surface acoustic wave device of the present invention,
This will be explained with reference to the drawings.
第１図において、LiTaO3，LiNbO3、セラミ
ツクスなどからなる圧電基板２２の一主面上に互
いに噛み合つた櫛形の入力電極２３と、この入力
電極２３に連接されたシールド電極２４と、この
シールド電極２４を介して入力電極２３に対設さ
れ、同じく互いに噛み合つた櫛形の出力電極２５
とからなる例えばPIF用の第１の弾性表面波素子
２１と、この第１の弾性表面波素子２１とほぼ同
一構造の入力電極２３、シールド電極３４、出力
電極３５とからなる例えばSIF用の第２の弾性表
面波素子３１が形成され、更にこれら第１の弾性
表面波素子２１と第２の弾性表面波素子３１との
圧電基板２２の両端面部近傍にはこの端面部から
の不要反射表面波を防止するために吸音部材層２
６が設けられている。このような圧電基板２２の
他の主面は接着部材層２７を介して外部導線２８
が貫通植設されたステム２９に載置固定後、この
外部導線２８と両弾性表面波素子２１，３１の各
電極はボンデイング線３０によつて例えば図のよ
うに導接され、最後にシエル（図示せず）をかぶ
せて気密封着され弾性表面波装置を完成するのは
従来のものとほぼ同様である。 In FIG. 1, a comb-shaped input electrode 23 interlocks with each other on one principal surface of a piezoelectric substrate 22 made of LiTaO 3 , LiNbO 3 , ceramics, etc., a shield electrode 24 connected to this input electrode 23 , and a shield electrode 24 connected to this input electrode 23 . A comb-shaped output electrode 25 is provided opposite to the input electrode 23 via the electrode 24 and also interlocks with each other.
A first surface acoustic wave element 21 for PIF, for example, consisting of an input electrode 23, a shield electrode 34, and an output electrode 35 having almost the same structure as the first surface acoustic wave element 21, for example, a first surface acoustic wave element 21 for SIF. Two surface acoustic wave elements 31 are formed, and unnecessary reflected surface waves from these end surfaces are formed near both end surfaces of the piezoelectric substrate 22 of the first surface acoustic wave element 21 and the second surface acoustic wave element 31. Sound absorbing material layer 2 to prevent
6 is provided. The other main surface of the piezoelectric substrate 22 is connected to the external conductor 28 via the adhesive layer 27.
is placed and fixed on the stem 29, which has been implanted through it, the external conductor 28 and each electrode of both the surface acoustic wave elements 21, 31 are connected to each other by a bonding wire 30, for example, as shown in the figure, and finally the shell ( (not shown) to complete the surface acoustic wave device is almost the same as the conventional method.
しかしながら、この実施例においては、第２図
および第３図に拡大して示すように、両弾性表面
波素子２１，３１間に幅lZ高さtZの吸音部材層３
８例えばフエノール樹脂が設けられていることを
特徴としている。この場合、Ｌ＞lZtZ＝nλとし第
１の表面波の波長をf0＝57.00MHzとした時t2≒
19.3μm即ち1/3λ、Ｌ＝150〜200μm、l2＝90〜
140μmにすることにより良好な結果が得られた。 However, in this embodiment, as shown enlarged in FIGS. 2 and 3, a sound absorbing material layer 3 with a width l Z and a height t
8, for example, is characterized by being provided with phenolic resin. In this case, when L>l Z t Z = nλ and the wavelength of the first surface wave is f 0 = 57.00MHz, t 2 ≒
19.3 μm or 1/3λ, L = 150 ~ 200 μm, l 2 = 90 ~
Good results were obtained by setting the thickness to 140 μm.
なお、圧電基板２２の厚さＴは、370μmであ
る。 Note that the thickness T of the piezoelectric substrate 22 is 370 μm.
この実施例によれば、例えば第１の弾性表面波
素子２１の入力電極２３から励振された表面波の
うち、第２の弾性表面波素子３１に伝搬する不要
波が吸音部材層３８に吸収され、第２の弾性表面
波素子３１が不所望な信号が発生することがなく
なる。すなわち、この実施例によれば、周波数帯
域の異なる２個の弾性表面波素子を１枚の圧電基
板上に形成した際に、それぞれの弾性表面波素子
から発生する表面波を、吸音部材層により吸収す
ることができる。したがつて、２個の弾性表面波
素子をそれぞれの帯域内で他から干渉されること
なく動作させることが可能となる。 According to this embodiment, for example, among the surface waves excited from the input electrode 23 of the first surface acoustic wave element 21, unnecessary waves propagating to the second surface acoustic wave element 31 are absorbed by the sound absorbing member layer 38. , the second surface acoustic wave element 31 no longer generates undesired signals. That is, according to this embodiment, when two surface acoustic wave elements with different frequency bands are formed on one piezoelectric substrate, the surface waves generated from each surface acoustic wave element are absorbed by the sound absorbing material layer. Can be absorbed. Therefore, it is possible to operate two surface acoustic wave elements within their respective bands without being interfered with by others.
また、この実施例によれば、圧電基板上に吸音
部材層を配置するだけなので、基板に傷がつき、
圧電基板等が割れる危険もなくなる効果もある。 Further, according to this embodiment, since the sound absorbing material layer is simply placed on the piezoelectric substrate, the substrate may be damaged.
This also has the effect of eliminating the risk of the piezoelectric substrate etc. breaking.
次に本発明の他の実施例について、第４図を参
照して説明する。 Next, another embodiment of the present invention will be described with reference to FIG.
第４図において、入力電極２３，３３のメイン
ローブ部近傍、および出力電極２５，３５の全域
にわたるように吸音部材層４０を設けたことを特
徴としている。 In FIG. 4, a sound absorbing member layer 40 is provided near the main lobe portions of the input electrodes 23, 33 and over the entire area of the output electrodes 25, 35.
この実施例によれば、実質的に必要のない部分
に吸音部材層を塗布する必要がないため、吸音部
材層を節約することができる効果がある。 According to this embodiment, there is no need to apply the sound absorbing material layer to portions that are not substantially needed, so there is an effect that the sound absorbing material layer can be saved.
上述の構成をとることにより、本発明の弾性表
面波装置では、２個の弾性表面波素子をそれぞれ
の帯域内で他から干渉されることなく動作させる
ことができる。
By adopting the above-described configuration, the surface acoustic wave device of the present invention can operate two surface acoustic wave elements within their respective bands without being interfered with by the others.
第１図は本発明の弾性表面波装置の一実施例を
示す模式平面図、第２図は第１図の要部拡大簡略
図、第３図は第２図をＣ−Ｃ線に沿つて切断した
断面簡略図、第４図は本発明の弾性表面波装置の
他の実施例を示す要部拡大簡略図、第５図は従来
の弾性表面波装置の一例を示す模式図、第６図は
第５図をＡ−Ａ線に沿つて切断した断面簡略図で
ある。
１，１１，２１，３１……弾性表面波素子、
２，２２……圧電基板、３，１３，２３，３３…
…入力電極、４，１４，２４，３４……シールド
電極、５，１５，２５，３５……出力電極、６，
２６，３８，４０……吸音部材層、９，２９……
ステム、１６……シエル。
FIG. 1 is a schematic plan view showing an embodiment of the surface acoustic wave device of the present invention, FIG. 2 is an enlarged and simplified view of the main part of FIG. 1, and FIG. 3 is a diagram showing FIG. FIG. 4 is a simplified enlarged view of main parts showing another embodiment of the surface acoustic wave device of the present invention; FIG. 5 is a schematic diagram showing an example of a conventional surface acoustic wave device; FIG. 5 is a simplified cross-sectional view taken along the line A-A of FIG. 5. FIG. 1, 11, 21, 31...Surface acoustic wave element,
2, 22... piezoelectric substrate, 3, 13, 23, 33...
... Input electrode, 4, 14, 24, 34 ... Shield electrode, 5, 15, 25, 35 ... Output electrode, 6,
26, 38, 40...Sound absorbing member layer, 9, 29...
Stem, 16... Ciel.
Claims (1)
よび出力電極とからなる第１の弾性表面波素子
と、 この第１の弾性表面波素子の周波数帯域と異な
る周波数帯域を有しかつ、前記第１の弾性表面波
素子が形成された前記圧電基板の主面と同一主面
上に形成された入力電極および出力電極とからな
る第２の弾性表面波素子とを備えた弾性表面波装
置において、 前記圧電基板の前記主面には、前記第１の弾性
表面波素子と前記第２の弾性表面波素子との間で
かつ、前記１つの弾性表面波素子と前記第２の弾
性表面波素子とのそれぞれの表面波の相互干渉を
防止する吸音部材層が設けられていることを特徴
とする弾性表面波装置。[Claims] 1. A first surface acoustic wave element comprising a piezoelectric substrate, an input electrode and an output electrode formed on the main surface of the piezoelectric substrate, and a frequency band of the first surface acoustic wave element. a second surface acoustic wave comprising an input electrode and an output electrode having a frequency band different from that of the first surface acoustic wave element and formed on the same main surface as the main surface of the piezoelectric substrate on which the first surface acoustic wave element is formed; In the surface acoustic wave device, the main surface of the piezoelectric substrate has a surface acoustic wave element between the first surface acoustic wave element and the second surface acoustic wave element, A surface acoustic wave device characterized in that a sound absorbing member layer is provided to prevent mutual interference of surface waves of the element and the second surface acoustic wave element.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP16080380A JPS5784607A (en) | 1980-11-17 | 1980-11-17 | Surface acoustic wave device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP16080380A JPS5784607A (en) | 1980-11-17 | 1980-11-17 | Surface acoustic wave device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5784607A JPS5784607A (en) | 1982-05-27 |
| JPH0221173B2 true JPH0221173B2 (en) | 1990-05-14 |
Family
ID=15722772
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP16080380A Granted JPS5784607A (en) | 1980-11-17 | 1980-11-17 | Surface acoustic wave device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5784607A (en) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH04110074U (en) * | 1990-12-29 | 1992-09-24 | 日本電気ホームエレクトロニクス株式会社 | Multi-format television receiver |
| KR100213372B1 (en) * | 1996-05-10 | 1999-08-02 | 이형도 | Monolitic saw duplexer |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS50120238A (en) * | 1974-02-15 | 1975-09-20 |
-
1980
- 1980-11-17 JP JP16080380A patent/JPS5784607A/en active Granted
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS50120238A (en) * | 1974-02-15 | 1975-09-20 |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS5784607A (en) | 1982-05-27 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JP3308759B2 (en) | Surface acoustic wave device | |
| US4500807A (en) | Surface acoustic wave transmission device for a low frequency signal below 30 MHz | |
| JPH0221173B2 (en) | ||
| US6906602B2 (en) | Surface acoustic wave filter utilizing two parallel acoustic channels with one having a narrower bandwidth | |
| WO1998009377A1 (en) | Surface mounting piezoelectric filter | |
| US4672338A (en) | Saw filter having response enhanced via dampening | |
| JPH05299969A (en) | Surface acoustic wave filter device | |
| JP2000236230A (en) | Surface acoustic wave filter | |
| JPH04192909A (en) | Composite trap | |
| JPS6090416A (en) | Surface acoustic wave element | |
| JPH0629774A (en) | Piezoelectric ceramic filter circuit and piezoelectric ceramic filter | |
| WO2019124126A1 (en) | Acoustic wave device, high frequency front end circuit, communication device and method for producing acoustic wave device | |
| JPH0653775A (en) | Surface acoustic wave device | |
| GB2050742A (en) | Surface acoustic wave filter | |
| JP2000059165A (en) | Surface acoustic wave device and manufacture therefor | |
| JPH0128532B2 (en) | ||
| JPH03173213A (en) | Surface acoustic wave device | |
| JPH042498Y2 (en) | ||
| JPH08116235A (en) | Surface acoustic wave device, manufacture thereof and system using same | |
| JPH0697757A (en) | Surface acoustic wave filter for surface package | |
| JPH0326672Y2 (en) | ||
| SU915129A1 (en) | Piezoelectroacoustic transducer | |
| KR0166579B1 (en) | Energy trapping piezo ceramic filter | |
| JPH03173211A (en) | Surface acoustic wave device | |
| JPH0215393Y2 (en) |