JPH02208954A - Manufacture of semiconductor device - Google Patents

Abstract

PURPOSE:To prevent the generation of failure and break of semiconductor wafers and to make it possible to apply automization to the unifixed type wafers as well by a method wherein the wafers are bonded on a substrate, which has a surface wider than the main surfaces of the wafers, with bonding agents and a wafer process is proceeded. CONSTITUTION:A plurality of kinds of semiconductor wafers 1, each having a different size, are bonded on a substrate 3, which has a surface wider than the main surface of the wafer 1 and has a fixed size, using bonding agents 41 to 43. Moreover, a treatment is performed on the wafers 1 at a temperature at which the adhesion of the wafers 1 does not come off from the substrate 3, to form element. After that, the wafers 1 are cut and separated into chips 81 to 83 as being formed integrally with the substrate 3 or being removed from the substrate 3. According to such a way, the generation of failure and break of the wafers 1 can be decreased between a wafer process and a chip cut-out process. Moreover, if the substrate 3 is formed into a fixed type one suitable for automization, the processes can be automatized whether the wafers 1 are determinate or indeterminate form.

Description

DETAILED DESCRIPTION OF THE INVENTION [Summary] The present invention relates to a method of manufacturing a semiconductor device, and particularly to a method of manufacturing a compound semiconductor device.

The purpose is to create semiconductor element chips by preventing wafer chipping or damage during the wafer process.

Multiple types of semiconductor wafers of different sizes are bonded using an adhesive onto a fixed-sized substrate with a surface wider than the main surface, and elements are formed by processing the semiconductor wafers at a temperature that does not allow the bond to come off. After completion of the process, the semiconductor device is manufactured by a method of manufacturing a semiconductor device in which the semiconductor wafer is cut into chips while being integrated with the substrate or separated from the substrate.

[Industrial application field]

The present invention relates to a method for manufacturing a semiconductor device, and particularly to a method for manufacturing a compound semiconductor device.

Compound semiconductors such as InP and InAs are brittle materials.

In the process of forming elements on a wafer and cutting the wafer into chips, the wafer is likely to be chipped or damaged. Therefore, it is difficult to automate the process, requiring either manual work or highly specialized automation equipment.

For this reason, there is a need for a manufacturing method that can be automated relatively easily and inexpensively without relying on manual labor.

(Prior Art) Conventionally, in the manufacture of compound semiconductor devices, after completion of element formation in a wafer state, when dividing the wafer into chips, the wafer was attached to a substrate having a wider surface and cut and separated.

However, since compound semiconductors are brittle materials, they often break during processing in a wafer state (hereinafter referred to as wafer processing), and chipping occurs particularly at the edges of the wafer, which has been a problem.

[Problem to be solved by the invention]

Therefore, in manufacturing compound semiconductor devices.

Hand work is done with great care to prevent chipping,
If automatic, highly specialized automation equipment was required.

An object of the present invention is to provide a semiconductor device manufacturing method that prevents damage and chipping of wafers during wafer processing and can also be applied to small wafers that are difficult to handle manually and irregularly shaped wafers that are difficult to automate. shall be.

[Means for solving the problem] FIG. 1 shows an embodiment. Means for solving the above problem will be explained with reference to FIG. 1 and the reference numerals in the figure.

The above-mentioned problem is to convert a plurality of types of semiconductor wafers 1 having different sizes into a fixed size substrate 3 having a surface wider than the main surface of the semiconductor wafer 1.
After the semiconductor wafer 1 is bonded using adhesives 41 to 43 and processed at a temperature at which the bond does not come off to complete element formation, the semiconductor wafer 1 remains integrated with the substrate 3. Alternatively, the problem can be solved by a method of manufacturing a semiconductor device in which the semiconductor device is removed from the substrate 3 and cut into chips 81 to 83.

[Effect]

In the present invention, a semiconductor wafer is bonded to a substrate having a surface wider than its main surface using an adhesive.

If the wafer process is carried out in this state, it is possible to prevent damage to the semiconductor wafer during the wafer process, especially chipping of the edge portion.

However, the wafer process must be carried out at a temperature at which the bond between the semiconductor wafer and the substrate does not come off, and the application of the present invention is based on the premise that the process at a temperature higher than the temperature at which the bond comes off has already been completed.

After a semiconductor wafer is bonded to a substrate, the wafer process is carried out, and after element formation is completed, the semiconductor wafer is cut into chips either while being integrated with the substrate or separated from the substrate.

In this way, damage and chipping of the semiconductor wafer can be extremely minimized in the steps from wafer processing to chip cutting.

Note that if the substrate to which the semiconductor wafer is attached is of a standard shape suitable for automation equipment, the wafer process can be automated even if the semiconductor wafer is a regular or irregular shape, or has a small size that is difficult to handle manually.

〔Example] FIG. 1 shows an example, and FIGS. 1(a) to (g) show an example.

1 is a cross-sectional view showing the manufacturing process of a compound semiconductor light-receiving device according to the present invention.

This will be explained below with reference to FIGS. 1(a) to 1(g).

See Figure 1(a) The semiconductor wafer 1 has 30 long sides and 26 short sides + n + n.

An n-[nP wafer 1 with a thickness of 150 μm is used.

Referring to FIG. 1(b), a P-type impurity cadmium (Cd) is thermally diffused over the entire surface to form a p-1nP layer 2 having a thickness of 3 μm.

See Figure 1(c) One side is polished to remove the p-1nP layer on one side of 5.

Refer to FIG. 1(d). Au with a thickness of 0.2 μm is used as adhesive material 41 on one side of the polished surface.
Deposit Ge41. A 2-inch Si wafer 3 with an orientation flat is used as the substrate 3, and adhesive material is applied to one side of the substrate 9 to a thickness of 0.
Deposit 2 μm of Au42. n-fnP wafer 1 ^
An AuSn foil or a block of AuSn is sandwiched between the uGe forming surface and the Au forming surface of the Si wafer 3 as an adhesive and pressurized, heated and melted at about 300° C. in a nitrogen atmosphere, and then cooled.

Thus, the n-1nP wafer 1 is bonded to Si through the adhesive.
It is bonded to the wafer 3.

Referring to FIG. 1(e), a resist film having a thickness of 0.1 μm is deposited on the p-1nP layer 2 to form a resist mask 5 having openings for forming electrodes.

After gold plating was performed using the resist mask 5 as a mask, as shown in FIG. 1(f), p-electrodes 61, 62, and 63 having a thickness of 3 μm were formed.

Etch and remove the resist mask.

Referring to FIG. 1(g), the n-1nP wafer 1 is cut and separated into chips 81, 82, and 83 while being integrated with the Si wafer 3.

The Si wafer 3 after cutting and separation is directly connected to the n-electrode 71°72
, 73.

In this way, a plurality of light receiving element chips could be obtained.

In the above example, the adhesive material was made of AuGe/AuSn/Au, but if heated to 380°C, AuG
Adhesion is possible with only e. 50° wafer process
If it can be done at C or less, an organic adhesive such as epoxy or resist can be used.

Further, the substrate 3 to which the semiconductor wafer 1 is bonded is not limited to a Si wafer, but may also be a GaAs substrate, two substrates, an English substrate, a Mina substrate, or the like.

Furthermore, when dividing into chips after completion of element formation.

The semiconductor wafer 1 and the substrate 3 may be cut and separated while being integrated, or the semiconductor wafer 1 and the substrate 3 may be separated from each other by heat treatment or chemical treatment and then cut and separated into chips.

〔Effect of the invention〕

As explained above, according to the present invention, it is possible to prevent damage or chipping of a semiconductor wafer, especially a compound semiconductor wafer, in the steps from forming elements to dividing the semiconductor wafer into chips after forming the elements.

[Brief explanation of the drawing]

FIGS. 1(a) to 1(g) show examples of the present invention. It is a sectional view showing a manufacturing process. In fig. 1 is a semiconductor wafer and n-1nP wafer 2 is p-1
The nP layer 3 is a substrate and is a Si wafer. 41 is an adhesive material, which is AuGe. 42 is an adhesive material of Au, and 43 is an adhesive material of AuSn. 5 is a resist mask. 61 to 63 are p electrodes. 71 to 73 are n electrodes. 81 to 83 ba tip (aan (Q) (ε) death 111' guDun3 ('f/)7)

Claims (1)

[Claims] A plurality of types of semiconductor wafers (1) having different sizes are bonded onto a fixed size substrate (3) having a surface wider than the main surface thereof using adhesives (41 to 43), and the bonding is performed at a temperature that will not cause the bond to come off. After processing the semiconductor wafer (1) to complete device formation, the semiconductor wafer (1) is integrated with the substrate (3) or removed from the substrate (3) to form chips (81 to 83). ) A method for manufacturing a semiconductor device, the method comprising cutting and separating the semiconductor device into two parts.