JPH02208217A - Manufacture of trichloromonosilane - Google Patents
Manufacture of trichloromonosilaneInfo
- Publication number
- JPH02208217A JPH02208217A JP1314472A JP31447289A JPH02208217A JP H02208217 A JPH02208217 A JP H02208217A JP 1314472 A JP1314472 A JP 1314472A JP 31447289 A JP31447289 A JP 31447289A JP H02208217 A JPH02208217 A JP H02208217A
- Authority
- JP
- Japan
- Prior art keywords
- gas
- silicon
- trichloromonosilane
- silicon powder
- hcl
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- ZDHXKXAHOVTTAH-UHFFFAOYSA-N trichlorosilane Chemical compound Cl[SiH](Cl)Cl ZDHXKXAHOVTTAH-UHFFFAOYSA-N 0.000 title claims abstract description 14
- 238000004519 manufacturing process Methods 0.000 title claims description 6
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 28
- 239000011863 silicon-based powder Substances 0.000 claims abstract description 16
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 12
- 239000010703 silicon Substances 0.000 claims abstract description 12
- 238000009689 gas atomisation Methods 0.000 claims abstract description 4
- 238000000034 method Methods 0.000 claims description 7
- 239000002245 particle Substances 0.000 claims description 6
- 239000000843 powder Substances 0.000 abstract description 2
- 239000007789 gas Substances 0.000 description 14
- 239000000047 product Substances 0.000 description 4
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- 239000006227 byproduct Substances 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- 238000000227 grinding Methods 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 239000005046 Chlorosilane Substances 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- 238000005275 alloying Methods 0.000 description 1
- 238000009835 boiling Methods 0.000 description 1
- KOPOQZFJUQMUML-UHFFFAOYSA-N chlorosilane Chemical class Cl[SiH3] KOPOQZFJUQMUML-UHFFFAOYSA-N 0.000 description 1
- 238000009833 condensation Methods 0.000 description 1
- 230000005494 condensation Effects 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 238000004821 distillation Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000004907 flux Effects 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 238000000465 moulding Methods 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 238000010298 pulverizing process Methods 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 238000010583 slow cooling Methods 0.000 description 1
- 238000005507 spraying Methods 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
- C01B33/00—Silicon; Compounds thereof
- C01B33/08—Compounds containing halogen
- C01B33/107—Halogenated silanes
- C01B33/1071—Tetrachloride, trichlorosilane or silicochloroform, dichlorosilane, monochlorosilane or mixtures thereof
- C01B33/10742—Tetrachloride, trichlorosilane or silicochloroform, dichlorosilane, monochlorosilane or mixtures thereof prepared by hydrochlorination of silicon or of a silicon-containing material
- C01B33/10757—Tetrachloride, trichlorosilane or silicochloroform, dichlorosilane, monochlorosilane or mixtures thereof prepared by hydrochlorination of silicon or of a silicon-containing material with the preferential formation of trichlorosilane
- C01B33/10763—Tetrachloride, trichlorosilane or silicochloroform, dichlorosilane, monochlorosilane or mixtures thereof prepared by hydrochlorination of silicon or of a silicon-containing material with the preferential formation of trichlorosilane from silicon
Landscapes
- Chemical & Material Sciences (AREA)
- Organic Chemistry (AREA)
- Inorganic Chemistry (AREA)
- Silicon Compounds (AREA)
- Pharmaceuticals Containing Other Organic And Inorganic Compounds (AREA)
Abstract
Description
【発明の詳細な説明】
本発明はトリクロルモノシランＨＳ ｉ Ｃ１５の製造
方法に関する。DETAILED DESCRIPTION OF THE INVENTION The present invention relates to a method for producing trichloromonosilane HS i C15.
超純粋トリクロルモノシランはシリコントランジスター
の製造用原料として用いられる。トリクロルモノシラン
はシリコン（ケイ素）粉末ｆＨｃｔガスと流動床反応器
中で反応させることにより製造され、流動床反応器にお
いてはＨＣｔガスを約２８０〜約３００℃の温度でシリ
コン粉末含有反応器に供給きれる。トリクロルモノシラ
ンは３１．８℃の沸点を有し、＃縮により流動床から生
成ガスとは別に取出されしかも蒸留によシ他のクロルシ
ラｙ類から分離される。Ultra-pure trichloromonosilane is used as a raw material for manufacturing silicon transistors. Trichloromonosilane is produced by reacting silicon powder fHct gas in a fluidized bed reactor, where the HCt gas can be fed to the silicon powder-containing reactor at a temperature of about 280 to about 300°C. . Trichloromonosilane has a boiling point of 31.8 DEG C. and is removed from the fluidized bed separately from the product gas by condensation and separated from the other chlorosilanes by distillation.
トリクロルモノシランを製造する際の重要な因子は未反
応ＨＣｔガスの量である。未反応ＨＣＬガスの量は該製
造法にとっては経費の面からきわめて重大な因子であり
、未反応ＨＣｔガスの量を出来るだけ少なくすべきであ
る。未反応ＨＣｔガスの量が増大すると、生成ガス中に
望ましくない副生物Ｓ ｉ Ｃ１４の量もまた増大させ
てしまい、かくして望ましい生成物のトリクロルモノシ
ランの量を減少させるものである。トリクロルモノシラ
ンを製造するに当っては、ブロック成形した（ｂｌｏｃ
ｋ ｃａｓｔ）シリコンの破砕及び粉砕によって製造し
ていたシリコン粉末を用いる。ブロック成形で得られる
冷却速度が遅いことにより、ブロック成形済みシリコン
中の合金化元素及び不純物は強く凝離する傾向がある。An important factor in producing trichloromonosilane is the amount of unreacted HCt gas. The amount of unreacted HCl gas is a very important cost factor for the production process, and the amount of unreacted HCt gas should be kept as low as possible. Increasing the amount of unreacted HCt gas also increases the amount of undesired by-product S i C14 in the product gas, thus reducing the amount of desired product trichloromonosilane. In producing trichloromonosilane, block molding was performed (block
k cast) Silicon powder manufactured by crushing and pulverizing silicon is used. Due to the slow cooling rates obtained with block forming, alloying elements and impurities in the block formed silicon tend to segregate strongly.
ブロック成形シリコンを破砕及び粉砕する間に、均質で
ない粉末生成物が得られ、該粉末は個々の粒子の間で化
学組成がかなシ大きく相異なっている。During crushing and grinding of block-formed silicon, a non-homogeneous powder product is obtained, which has a chemical composition that varies widely between the individual particles.
シリコン粉末の品質及び均質性は前記のトリクロルモノ
シランの製造法に顕著な作用を及ぼし、今般見出された
所によると、溶融シリコンのガス噴霧化により製造され
たシリコン粉末を用いることによシ、シリコン粉末とＨ
Ｃｔガスとの反応でトリクロルモノシランを製造する方
法においてＨＣｔガスの・驚く程に高い利用が図られる
ものである。The quality and homogeneity of silicon powder have a significant effect on the above-mentioned method for producing trichloromonosilane, and it has now been discovered that by using silicon powder produced by gas atomization of molten silicon, Silicon powder and H
A surprisingly high utilization of HCt gas is achieved in the process of producing trichloromonosilane by reaction with Ct gas.
かくして本発明によると、反応器に装入するシリコン粉
末は溶融シリコンのガス噴霧化によシ製造されることを
特徴とする、２８０〜３００℃の温度でシリコン粉末と
ＨＣｔガスとの反応で流動床反応器中にトリクロルモノ
シランを製造する方法を提供する。Thus, according to the invention, the silicon powder charged to the reactor is produced by gas atomization of molten silicon, which is characterized in that it is fluidized by reaction of silicon powder with HCt gas at a temperature of 280-300°C. A method of producing trichloromonosilane in a bed reactor is provided.
用いるシリコン粉末は１〜１０００μの粒度を有し、５
０〜８００μの粒度を有するのが好ましい。The silicon powder used has a particle size of 1 to 1000μ, with a particle size of 5
Preferably it has a particle size of 0 to 800 microns.
本発明の方法によって、該処理におけるＨＣｌの利用は
かなり増大する。何故ならば生成ガス中の未反応ＨＣ１
の含酸は慣用の５〜［０％から２〜３チに低下するから
である。未反応ｆ（Ｃ１Ｏ量が低下することによって生
成される副生物、就中Ｓ ｉ ＣＬａの曖も低下する。The method of the invention considerably increases the utilization of HCl in the process. This is because unreacted HC1 in the generated gas
This is because the acid content of is reduced from the conventional 5 to 0% to 2 to 3%. As the amount of unreacted f(C1O) decreases, the ambiguity of by-products, especially S i CLa, also decreases.
生成した５ｉＣ１４の量は本発明の方法によって３〜５
チだけ低下したことがかくして見出された。これはまた
トリクロルモノシランがより多く製造されることを意味
する。The amount of 5iC14 produced by the method of the present invention is 3 to 5.
It was thus found that only Q decreased. This also means that more trichloromonosilane is produced.
本発明を次の実施例により説明する。The invention is illustrated by the following examples.
実施例 内径４０ｍｍの流動床反応器中で次の試験を実施した。Example The following tests were carried out in a fluidized bed reactor with an internal diameter of 40 mm.
全ての試験において５０〜３５０μの粒度を有するシリ
コンを同量で用いた。２パールの圧力でＨＣｔガスを反
応器の底部に供給した。ＨＣｌの流曖は全ての試験中一
定に保持した。加熱し且つ反応を開始させた後には、反
応条件を２９０℃で一定に保持した。これらの条件下で
生成ガスのＨｃｔ含量を測定した。The same amount of silicon with a particle size of 50-350 microns was used in all tests. HCt gas was fed to the bottom of the reactor at a pressure of 2 pars. HCl flux was kept constant during all tests. After heating and starting the reaction, the reaction conditions were kept constant at 290°C. The Hct content of the produced gas was measured under these conditions.
試験ＡＦｉ破砕及び粉砕により慣用の仕方で製造したシ
リコン粉末を用いて実施した。試験Ｂは窒素により溶融
シリコンを噴霧することにより段進したシリコン粉末を
用いて実施した。Tests were carried out using silicon powder produced in a conventional manner by AFi crushing and grinding. Test B was carried out using silicon powder that had been advanced by spraying the molten silicon with nitrogen.
シリコン粉末の化学組成は次の通りである。The chemical composition of the silicon powder is as follows.
試験Ａ 試験Ｂ
Ｎ量膚 重量％
Ｆｅ Ｏ，４００，３５
Ｃａ Ｏ，０１０，０５
ＡｔＯ，４７０，４２
Ｔｉ Ｏ，０２０，０２
試験ＡについてＨＣｌの歩留り即ち利用度は９２チであ
り、然るに試験ＢについてＨｃｚの歩留りは９８俤であ
ることが見出された。この結果から、従来法に比し本発
明の方法により高度（ζ増大したＨＣｌの利用が図られ
之ことは明らかである。Test A Test B N content Weight % Fe O, 400,35 Ca O, 010,05 AtO, 470,42 Ti O, 020,02 For Test A, the yield or utilization of HCl was 92, whereas for Test B It was found that the yield of Hcz was 98 yen. From this result, it is clear that the method of the present invention makes it possible to utilize HCl to a higher degree (ζ increased) than the conventional method.
Claims (1)
ン粉末を用いることを特徴とする、２８０〜３００℃の
温度でシリコン粉末とＨＣｌとの反応によつて流動床反
応器でのトリクロルモノシランの製造方法。 ２、ガス噴霧化したシリコンは１〜１０００μの粒度を
有する請求項１記載の方法。[Claims] 1. In a fluidized bed reactor by reaction of silicon powder with HCl at a temperature of 280-300°C, characterized by using silicon powder produced by gas atomization of molten silicon. A method for producing trichloromonosilane. 2. The method of claim 1, wherein the gas atomized silicon has a particle size of 1 to 1000 microns.
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| NO885454A NO166032C (en) | 1988-12-08 | 1988-12-08 | PROCEDURE FOR THE PREPARATION OF TRICHLORMONOSILAN. |
| NO885454 | 1988-12-08 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH02208217A true JPH02208217A (en) | 1990-08-17 |
| JPH055765B2 JPH055765B2 (en) | 1993-01-25 |
Family
ID=19891500
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP1314472A Granted JPH02208217A (en) | 1988-12-08 | 1989-12-05 | Manufacture of trichloromonosilane |
Country Status (9)
| Country | Link |
|---|---|
| US (1) | US4986971A (en) |
| JP (1) | JPH02208217A (en) |
| BR (1) | BR8906363A (en) |
| CA (1) | CA2003168C (en) |
| DD (1) | DD285967A5 (en) |
| DE (1) | DE3938897A1 (en) |
| FR (1) | FR2640254B1 (en) |
| NO (1) | NO166032C (en) |
| RU (1) | RU1838236C (en) |
Cited By (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2008137870A (en) * | 2006-12-05 | 2008-06-19 | Osaka Titanium Technologies Co Ltd | Method for producing chlorinated silicon |
| JP2008184378A (en) * | 2007-01-31 | 2008-08-14 | Osaka Titanium Technologies Co Ltd | Method for producing high-purity trichlorosilane |
| WO2011111335A1 (en) | 2010-03-10 | 2011-09-15 | 信越化学工業株式会社 | Method for producing trichlorosilane |
| WO2013187070A1 (en) | 2012-06-14 | 2013-12-19 | 信越化学工業株式会社 | Method for producing high-purity polycrystalline silicon |
| WO2014125762A1 (en) | 2013-02-13 | 2014-08-21 | 信越化学工業株式会社 | Method for producing trichlorosilane |
| WO2014167757A1 (en) | 2013-04-11 | 2014-10-16 | 信越化学工業株式会社 | Method for purifying silane compound or chlorosilane compound, method for producing polycrystalline silicon, and method for regenerating weakly basic ion-exchange resin |
| JP2015081215A (en) * | 2013-10-23 | 2015-04-27 | 信越化学工業株式会社 | Method for producing polycrystalline silicon |
| KR20170027824A (en) | 2014-07-10 | 2017-03-10 | 신에쓰 가가꾸 고교 가부시끼가이샤 | Method for purifying chlorosilane |
| KR20200144572A (en) * | 2018-04-18 | 2020-12-29 | 와커 헤미 아게 | Method for producing chlorosilane |
| JP2021006492A (en) * | 2019-06-28 | 2021-01-21 | 三菱マテリアル株式会社 | Method for producing trichlorosilane |
| JP2022515127A (en) * | 2018-12-18 | 2022-02-17 | ワッカー ケミー アクチエンゲゼルシャフト | Chlorosilane manufacturing method |
Families Citing this family (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5871705A (en) * | 1996-09-19 | 1999-02-16 | Tokuyama Corporation | Process for producing trichlorosilane |
| DE102004017453A1 (en) * | 2004-04-08 | 2005-10-27 | Wacker-Chemie Gmbh | Process for the preparation of trichloromonosilane |
| US7658900B2 (en) * | 2005-03-05 | 2010-02-09 | Joint Solar Silicon Gmbh & Co. Kg | Reactor and process for the preparation of silicon |
| DE102013215011A1 (en) | 2013-07-31 | 2015-02-05 | Wacker Chemie Ag | Process for the preparation of trichlorosilane |
| JP7275278B2 (en) * | 2018-12-18 | 2023-05-17 | ワッカー ケミー アクチエンゲゼルシャフト | Method for producing chlorosilane |
| EP3962861A1 (en) * | 2019-04-29 | 2022-03-09 | Wacker Chemie AG | Process for producing trichlorosilane with structure-optimised silicon particles |
| EP3976533A1 (en) | 2019-05-29 | 2022-04-06 | Wacker Chemie AG | Process for producing trichlorosilane with structure-optimised silicon particles |
| CN113286800B (en) * | 2019-06-14 | 2024-08-23 | 瓦克化学股份公司 | Method for producing methylchlorosilanes using structurally optimized silicon particles |
Family Cites Families (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CA652188A (en) * | 1962-11-13 | Chassaing Pierre | Production of trichlorosilane | |
| FR1239350A (en) * | 1959-06-24 | 1960-12-16 | Pechiney | Further development in the industrial manufacture of trichlorosilane |
| US3592391A (en) * | 1969-01-27 | 1971-07-13 | Knapsack Ag | Nozzle for atomizing molten material |
| US4347199A (en) * | 1981-03-02 | 1982-08-31 | Dow Corning Corporation | Method and apparatus for rapidly freezing molten metals and metalloids in particulate form |
| JPS5832011A (en) * | 1981-08-17 | 1983-02-24 | Nippon Aerojiru Kk | Preparation of trichlorosilane and silicon tetrachloride from silicon and hydrogen chloride |
| US4419060A (en) * | 1983-03-14 | 1983-12-06 | Dow Corning Corporation | Apparatus for rapidly freezing molten metals and metalloids in particulate form |
-
1988
- 1988-12-08 NO NO885454A patent/NO166032C/en not_active IP Right Cessation
-
1989
- 1989-11-09 US US07/434,087 patent/US4986971A/en not_active Expired - Fee Related
- 1989-11-16 CA CA002003168A patent/CA2003168C/en not_active Expired - Fee Related
- 1989-11-22 FR FR898915325A patent/FR2640254B1/en not_active Expired - Fee Related
- 1989-11-24 DE DE3938897A patent/DE3938897A1/en active Granted
- 1989-12-05 JP JP1314472A patent/JPH02208217A/en active Granted
- 1989-12-06 DD DD89335320A patent/DD285967A5/en not_active IP Right Cessation
- 1989-12-07 RU SU894742716A patent/RU1838236C/en active
- 1989-12-08 BR BR898906363A patent/BR8906363A/en not_active IP Right Cessation
Cited By (20)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP4664892B2 (en) * | 2006-12-05 | 2011-04-06 | 株式会社大阪チタニウムテクノロジーズ | Method for producing silicon chloride |
| JP2008137870A (en) * | 2006-12-05 | 2008-06-19 | Osaka Titanium Technologies Co Ltd | Method for producing chlorinated silicon |
| JP2008184378A (en) * | 2007-01-31 | 2008-08-14 | Osaka Titanium Technologies Co Ltd | Method for producing high-purity trichlorosilane |
| US9266742B2 (en) | 2010-03-10 | 2016-02-23 | Shin-Etsu Chemical Co., Ltd. | Method for producing trichlorosilane |
| WO2011111335A1 (en) | 2010-03-10 | 2011-09-15 | 信越化学工業株式会社 | Method for producing trichlorosilane |
| WO2013187070A1 (en) | 2012-06-14 | 2013-12-19 | 信越化学工業株式会社 | Method for producing high-purity polycrystalline silicon |
| EP3170791A1 (en) | 2012-06-14 | 2017-05-24 | Shin-Etsu Chemical Co., Ltd. | Method for producing high-purity polycrystalline silicon |
| US9355918B2 (en) | 2012-06-14 | 2016-05-31 | Shin-Etsu Chemical Co., Ltd. | Method for producing high-purity polycrystalline silicon |
| WO2014125762A1 (en) | 2013-02-13 | 2014-08-21 | 信越化学工業株式会社 | Method for producing trichlorosilane |
| WO2014167757A1 (en) | 2013-04-11 | 2014-10-16 | 信越化学工業株式会社 | Method for purifying silane compound or chlorosilane compound, method for producing polycrystalline silicon, and method for regenerating weakly basic ion-exchange resin |
| US9669400B2 (en) | 2013-04-11 | 2017-06-06 | Shin-Etsu Chemical Co., Ltd. | Method for purifying silane compound or chlorosilane compound, method for producing polycrystalline silicon, and method for regenerating weakly basic ion-exchange resin |
| EP3296261A1 (en) | 2013-04-11 | 2018-03-21 | Shin-Etsu Chemical Co., Ltd. | Method for regenerating weakly basic ion-exchange resin |
| WO2015059919A1 (en) | 2013-10-23 | 2015-04-30 | 信越化学工業株式会社 | Method for manufacturing polycrystalline silicon |
| JP2015081215A (en) * | 2013-10-23 | 2015-04-27 | 信越化学工業株式会社 | Method for producing polycrystalline silicon |
| KR20160074466A (en) | 2013-10-23 | 2016-06-28 | 신에쓰 가가꾸 고교 가부시끼가이샤 | Method for manufacturing polycrystalline silicon |
| KR20170027824A (en) | 2014-07-10 | 2017-03-10 | 신에쓰 가가꾸 고교 가부시끼가이샤 | Method for purifying chlorosilane |
| KR20200144572A (en) * | 2018-04-18 | 2020-12-29 | 와커 헤미 아게 | Method for producing chlorosilane |
| JP2021521092A (en) * | 2018-04-18 | 2021-08-26 | ワッカー ケミー アクチエンゲゼルシャフトＷａｃｋｅｒ Ｃｈｅｍｉｅ ＡＧ | Method for producing chlorosilane |
| JP2022515127A (en) * | 2018-12-18 | 2022-02-17 | ワッカー ケミー アクチエンゲゼルシャフト | Chlorosilane manufacturing method |
| JP2021006492A (en) * | 2019-06-28 | 2021-01-21 | 三菱マテリアル株式会社 | Method for producing trichlorosilane |
Also Published As
| Publication number | Publication date |
|---|---|
| CA2003168A1 (en) | 1990-06-08 |
| US4986971A (en) | 1991-01-22 |
| DE3938897A1 (en) | 1990-06-13 |
| BR8906363A (en) | 1990-08-21 |
| NO166032B (en) | 1991-02-11 |
| JPH055765B2 (en) | 1993-01-25 |
| DE3938897C2 (en) | 1992-07-23 |
| NO885454L (en) | 1990-06-11 |
| FR2640254A1 (en) | 1990-06-15 |
| FR2640254B1 (en) | 1993-08-27 |
| NO885454D0 (en) | 1988-12-08 |
| CA2003168C (en) | 1997-07-15 |
| NO166032C (en) | 1991-05-22 |
| DD285967A5 (en) | 1991-01-10 |
| RU1838236C (en) | 1993-08-30 |
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