JPH02207527A - Polishing method of gaas wafer - Google Patents
Polishing method of gaas waferInfo
- Publication number
- JPH02207527A JPH02207527A JP2811989A JP2811989A JPH02207527A JP H02207527 A JPH02207527 A JP H02207527A JP 2811989 A JP2811989 A JP 2811989A JP 2811989 A JP2811989 A JP 2811989A JP H02207527 A JPH02207527 A JP H02207527A
- Authority
- JP
- Japan
- Prior art keywords
- gaas
- polishing
- wafer
- reaction
- hypochlorous acid
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000005498 polishing Methods 0.000 title claims abstract description 31
- 238000000034 method Methods 0.000 title claims abstract description 12
- 229910001218 Gallium arsenide Inorganic materials 0.000 claims abstract description 24
- 239000007864 aqueous solution Substances 0.000 claims abstract description 9
- 238000007517 polishing process Methods 0.000 claims abstract description 3
- 239000003795 chemical substances by application Substances 0.000 claims description 8
- XTEGARKTQYYJKE-UHFFFAOYSA-N chloric acid Chemical compound OCl(=O)=O XTEGARKTQYYJKE-UHFFFAOYSA-N 0.000 claims description 6
- 229940005991 chloric acid Drugs 0.000 claims description 6
- 238000006243 chemical reaction Methods 0.000 abstract description 8
- QWPPOHNGKGFGJK-UHFFFAOYSA-N hypochlorous acid Chemical compound ClO QWPPOHNGKGFGJK-UHFFFAOYSA-N 0.000 abstract description 5
- 238000005530 etching Methods 0.000 abstract description 4
- 239000003513 alkali Substances 0.000 abstract description 2
- 239000003638 chemical reducing agent Substances 0.000 abstract description 2
- 230000006866 deterioration Effects 0.000 abstract description 2
- 230000000694 effects Effects 0.000 abstract description 2
- 230000001590 oxidative effect Effects 0.000 abstract 2
- PEDCQBHIVMGVHV-UHFFFAOYSA-N Glycerine Chemical compound OCC(O)CO PEDCQBHIVMGVHV-UHFFFAOYSA-N 0.000 description 6
- 238000007254 oxidation reaction Methods 0.000 description 4
- 239000000126 substance Substances 0.000 description 4
- 235000011187 glycerol Nutrition 0.000 description 3
- 239000007788 liquid Substances 0.000 description 3
- 230000003647 oxidation Effects 0.000 description 3
- 239000000243 solution Substances 0.000 description 3
- 238000007796 conventional method Methods 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 239000002699 waste material Substances 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 1
- 230000002925 chemical effect Effects 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000007865 diluting Methods 0.000 description 1
- 238000005406 washing Methods 0.000 description 1
- 238000004065 wastewater treatment Methods 0.000 description 1
Landscapes
- Weting (AREA)
Abstract
Description
【発明の詳細な説明】
［産業上の利用分野］
この発明は、ＧａＡｓウェハを研磨する方法に関するも
のであり、特に最終的な研磨である化学研磨の方法に関
するものである。DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to a method of polishing a GaAs wafer, and particularly to a method of chemical polishing which is the final polishing.
［従来の技術および発明が解決しようとする課８］Ｇａ
Ａｓウェハの最終的な研磨は、化学研磨によりなされて
おり、一般的には次亜塩素酸系の研磨剤が使用されてい
る。このような次亜塩素酸系研磨材としては、たとえば
インセック（商品名；株式会社不二見研磨材製）などが
知られている。[Problem 8 to be solved by the prior art and the invention] Ga
The final polishing of the As wafer is carried out by chemical polishing, and generally a hypochlorous acid-based polishing agent is used. As such a hypochlorous acid-based abrasive, for example, Insec (trade name; manufactured by Fujimi Abrasives Co., Ltd.) is known.
このような次至塩素酸系研磨剤は、化学的作用が強く、
研磨終了時にＧａＡｓウェハ表面にこの研磨液が残留し
ていると、ＧａＡｓウェハ表面テナノメートルオーダの
エツチングおよび酸化が進行し、その結果表面曇りの原
因と考えられる微小な凹凸が発生し、表面の品質が劣化
する。This type of chloric acid-based polishing agent has a strong chemical effect,
If this polishing solution remains on the surface of the GaAs wafer after polishing, etching and oxidation on the order of ten nanometers will progress on the surface of the GaAs wafer, resulting in minute irregularities that are thought to be the cause of surface cloudiness, and the quality of the surface will deteriorate. deteriorates.
このようなエツチングおよび酸化を抑制するため、たと
えば特開昭６２−１７７０００号公報では、研磨後に、
グリセリンと水の混合液により、研磨液を洗い落とす方
法が提唱されている。In order to suppress such etching and oxidation, for example, in Japanese Patent Application Laid-open No. 177000/1983, after polishing,
A method has been proposed in which the polishing liquid is washed off using a mixture of glycerin and water.
しかしながら、このような方法では、洗浄後の排液中に
、有機物であるグリセリンが含まれており、特別な排液
処理が必要となる。また、コスト的にも高くなるという
問題を生じる。However, in such a method, the waste liquid after washing contains glycerin, which is an organic substance, and special waste liquid treatment is required. Moreover, there arises a problem that the cost becomes high.
この発明の目的は、かかる従来の問題を解消し、特別な
排液処理を必要とせず、しかも低いコストで表面の品質
劣化を防止することのできるＧａＡｓウェハの研磨方法
を提供することにある。An object of the present invention is to provide a method for polishing a GaAs wafer that eliminates such conventional problems, does not require special drainage treatment, and can prevent surface quality deterioration at a low cost.
［課題を解決するための手段］
この発明のＧａＡｓウェハの研磨方法では、研磨の終了
直前に、Ｈ２Ｏ２水溶液でＧａＡｓウェハ表面を処理す
ることを特徴としている。[Means for Solving the Problems] The method for polishing a GaAs wafer of the present invention is characterized in that the surface of the GaAs wafer is treated with an aqueous H2O2 solution immediately before the end of polishing.
この発明で用いるＨ２Ｏ２水溶液の濃度は研磨剤等の条
件により適宜調整することができる。The concentration of the H2O2 aqueous solution used in this invention can be adjusted as appropriate depending on the conditions of the abrasive and the like.
［作用コ
ＧａＡｓの次至塩素酸系研磨剤による研磨においては、
まず次式で示すような酸化反応が起こる。[In the polishing of GaAs using a chloric acid polishing agent,
First, an oxidation reaction occurs as shown in the following equation.
ＧａＡｓ＋４ＣｆｌＯ−→ＧａＡｓＯ４＋４Ｃｆ）−次
に、このようにして生じた酸化物であるＧａＡｓ０．は
、アルカリにより溶解される。GaAs+4CflO-→GaAsO4+4Cf)-Next, the oxide thus produced, GaAs0. is dissolved by alkali.
この発明に従い、研磨の終了直前にＩ（２０□水溶液で
ＧａＡｓウェハ表面を処理すると、Ｈ２Ｏ２は還元剤と
して作用し、上記の式の反応の代わりに、次式の反応が
起こる。According to this invention, when the GaAs wafer surface is treated with an I(20□ aqueous solution) just before the end of polishing, H2O2 acts as a reducing agent, and instead of the reaction of the above formula, the following reaction occurs.
ＧａＡｓ 十ｃ ｆＬＯ−十Ｈ２０２−ＧａＡｓウェハ
−＋Ｈ，２０＋０２ ↑この反応により、次至塩素酸系
研磨剤の作用は瞬時に停止し、ＧａＡｓ表面におけるエ
ツチングおよび酸化が抑制される。このため、微小の凹
凸の発生がな（なり、表面に曇りのないウェハを得るこ
とができる。GaAs 10c fLO-1H202-GaAs wafer-+H, 20+02 ↑ Due to this reaction, the action of the chloric acid-based polishing agent is instantaneously stopped, and etching and oxidation on the GaAs surface are suppressed. Therefore, minute irregularities are not generated, and a wafer with no cloudy surface can be obtained.
［実施例］
次至塩素酸系研磨剤であるインセックを用いて、ＧａＡ
ｓウェハの最終的な化学研磨を行なった。[Example] Using Insec, a chloric acid-based polishing agent, GaA
A final chemical polishing of the S wafer was performed.
３１％Ｈ２０、水溶液を５〜５０倍の範囲内で希釈した
水溶液を調製し、このＨ２Ｏ２の希釈水溶液を、研磨の
終了直前に、３０〜５０ｃｃＳＧａＡｓウ工ハ表面上を
５秒間流してウェハ表面を処理した。An aqueous solution of 31% H20 was prepared by diluting the aqueous solution within the range of 5 to 50 times, and immediately before the end of polishing, this diluted H2O2 aqueous solution was flowed over the surface of the 30 to 50cc SGaAs wafer for 5 seconds to clean the wafer surface. Processed.
得られたＧａＡｓウェハの表面は、従来の方法では認め
られた表面の曇りが、−切認められず、また、その他の
表面欠陥も存在しなかった。The surface of the obtained GaAs wafer had no surface haze, which was observed in the conventional method, and no other surface defects.
［発明の効果コ
以上説明したように、この発明の研磨方法によれば、研
磨の終了直前に、Ｈ２０□水溶液でＧａＡｓウェハ表面
を処理し、次至塩素酸系研磨剤を還元して、研磨剤の作
用を瞬時に停止させ、ＧａＡｓウェハ表面の曇りの原因
となる微小な凹凸の発生を抑制している。[Effects of the Invention] As explained above, according to the polishing method of the present invention, the surface of the GaAs wafer is treated with an H20□ aqueous solution immediately before the end of polishing, and then the chloric acid-based polishing agent is reduced and the polishing is completed. This instantly stops the action of the agent and suppresses the formation of minute irregularities that cause clouding on the surface of the GaAs wafer.
この発明の方法で用いるＨ２Ｏ２水溶液は、非常に簡単
な方法で処理できるので、グリセリンと水の混合液を用
いる従来の方法のように特別な排液処理を必要としない
。また、低いコストで行なうことができるので、経済性
の面からも好ましい。The aqueous H2O2 solution used in the method of the present invention can be treated in a very simple manner and does not require special wastewater treatment unlike the conventional method using a mixture of glycerin and water. Moreover, since it can be carried out at low cost, it is also preferable from an economic point of view.
Claims (1)
する方法において、 前記研磨の終了直前にＨ＿２Ｏ＿２水溶液で前記ＧａＡ
ｓウェハ表面を処理することを特徴とする、ＧａＡｓウ
ェハの研磨方法。(1) In a method of polishing the surface of a GaAs wafer with a chloric acid-based polishing agent, the GaAs wafer surface is polished with an H_2O_2 aqueous solution immediately before the end of the polishing.
A method for polishing a GaAs wafer, the method comprising treating the surface of the s-wafer.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2811989A JPH02207527A (en) | 1989-02-06 | 1989-02-06 | Polishing method of gaas wafer |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2811989A JPH02207527A (en) | 1989-02-06 | 1989-02-06 | Polishing method of gaas wafer |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH02207527A true JPH02207527A (en) | 1990-08-17 |
Family
ID=12239917
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2811989A Pending JPH02207527A (en) | 1989-02-06 | 1989-02-06 | Polishing method of gaas wafer |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH02207527A (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5584959A (en) * | 1993-08-16 | 1996-12-17 | Ebara Corporation | Waste treatment system in a polishing apparatus |
| KR100474537B1 (en) * | 2002-07-16 | 2005-03-10 | 주식회사 하이닉스반도체 | The CMP Slurry Composition for Oxide and Method of Forming Semiconductor Device Using the Same |
| US7960284B2 (en) | 2007-01-23 | 2011-06-14 | Sumitomo Electric Industries, Ltd. | III-V compound semiconductor substrate manufacturing method |
-
1989
- 1989-02-06 JP JP2811989A patent/JPH02207527A/en active Pending
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5584959A (en) * | 1993-08-16 | 1996-12-17 | Ebara Corporation | Waste treatment system in a polishing apparatus |
| KR100474537B1 (en) * | 2002-07-16 | 2005-03-10 | 주식회사 하이닉스반도체 | The CMP Slurry Composition for Oxide and Method of Forming Semiconductor Device Using the Same |
| US7960284B2 (en) | 2007-01-23 | 2011-06-14 | Sumitomo Electric Industries, Ltd. | III-V compound semiconductor substrate manufacturing method |
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