JPH02205678A - Vacuum film formation - Google Patents
Vacuum film formationInfo
- Publication number
- JPH02205678A JPH02205678A JP2342789A JP2342789A JPH02205678A JP H02205678 A JPH02205678 A JP H02205678A JP 2342789 A JP2342789 A JP 2342789A JP 2342789 A JP2342789 A JP 2342789A JP H02205678 A JPH02205678 A JP H02205678A
- Authority
- JP
- Japan
- Prior art keywords
- thin film
- metal
- metal thin
- film
- substrate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 230000015572 biosynthetic process Effects 0.000 title abstract description 4
- 229910052751 metal Inorganic materials 0.000 claims abstract description 67
- 239000002184 metal Substances 0.000 claims abstract description 67
- 239000010409 thin film Substances 0.000 claims abstract description 52
- 239000000758 substrate Substances 0.000 claims abstract description 27
- 239000010408 film Substances 0.000 claims abstract description 19
- 238000000034 method Methods 0.000 claims abstract description 15
- 238000010438 heat treatment Methods 0.000 claims abstract description 11
- 238000004544 sputter deposition Methods 0.000 claims abstract description 7
- 238000005229 chemical vapour deposition Methods 0.000 claims abstract description 3
- 238000001771 vacuum deposition Methods 0.000 claims description 3
- 238000001947 vapour-phase growth Methods 0.000 claims description 3
- 229910000838 Al alloy Inorganic materials 0.000 abstract 1
- 238000007740 vapor deposition Methods 0.000 abstract 1
- 239000000956 alloy Substances 0.000 description 25
- 229910045601 alloy Inorganic materials 0.000 description 25
- 229910002065 alloy metal Inorganic materials 0.000 description 6
- 238000010586 diagram Methods 0.000 description 6
- 238000007796 conventional method Methods 0.000 description 2
- 238000005243 fluidization Methods 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
Landscapes
- Physical Vapour Deposition (AREA)
- Chemical Vapour Deposition (AREA)
- Other Surface Treatments For Metallic Materials (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
Abstract
Description
【発明の詳細な説明】
（産業上の利用分野）
この発明は金属薄膜の形成された基板の凹状部内に空洞
を発生させないようにする真空成膜方法に関するもので
ある。DETAILED DESCRIPTION OF THE INVENTION (Industrial Application Field) The present invention relates to a vacuum film forming method that prevents the formation of cavities in concave portions of a substrate on which a metal thin film is formed.
（従来の技術）
従来の真空成膜方法は、スパッタリング法によって、凹
状部１ａを有する基板１上にＡｌ系合金の金属薄膜２を
形成するとき、第５図に示されるように、凹状部ｌａ内
の中央には中空部３が発生するので、基板ｌ上に形成さ
れたＡｔ’系合金の金属薄膜２を５００℃以上に加熱し
て、Ａｌ系合金の金属薄膜２を流動化させ、Ａｆ系合金
の金属薄膜２の流動化した金属を中空部３に流入して、
第６図に示されるように、凹状部ｌａ内をＡｌ系合金の
金属薄膜２の金属で全部埋め込み、そして、その後、冷
却するものであった。(Prior Art) In a conventional vacuum film forming method, when forming a metal thin film 2 of an Al-based alloy on a substrate 1 having a concave portion 1a by a sputtering method, as shown in FIG. Since a hollow part 3 is generated in the center of the inner part, the metal thin film 2 of At'-based alloy formed on the substrate l is heated to 500°C or higher to fluidize the metal thin film 2 of Al-based alloy, and the metal thin film 2 of Al-based alloy is fluidized. The fluidized metal of the metal thin film 2 of the alloy is flowed into the hollow part 3,
As shown in FIG. 6, the inside of the concave portion la was completely filled with a metal thin film 2 of an Al-based alloy, and then cooled.
（発明が解決しようとする課題）
従来の真空成膜方法は、上記のように金属薄膜２を加熱
して、凹状部ｌａ内を金属薄膜２の金属で全部埋め込む
ようにしているが、凹状部１ａが微細で、しかもアスペ
クト比１以上である場合には、ＡＩｌ系合金の金属薄膜
２の流動化した金属を中空部３に流入させても、流入が
うまくゆかず、第７図に示すように凹状部ｌａ内に金属
薄膜２の金属で囲まれた空洞４が存在する問題があった
。(Problem to be Solved by the Invention) In the conventional vacuum film forming method, as described above, the metal thin film 2 is heated to completely fill the inside of the recessed part la with the metal of the metal thin film 2. If 1a is fine and has an aspect ratio of 1 or more, even if the fluidized metal of the Al-based alloy metal thin film 2 is allowed to flow into the hollow part 3, the inflow will not proceed smoothly, as shown in FIG. There was a problem in that a cavity 4 surrounded by the metal of the metal thin film 2 existed within the concave portion la.
この発明は、上記のような従来の方法のもつ問題を解決
して、凹状部内に空洞を発生させないで、基板上に金属
薄膜を形成する真空成膜方法を提供することを目的とし
ている。It is an object of the present invention to solve the problems of the conventional methods as described above and to provide a vacuum film forming method for forming a metal thin film on a substrate without creating a cavity in a recessed portion.
（課題を解決するための手段）
上記目的を達成するために、この発明の真空成膜方法は
、スパッタリング法、ＣＶＤ法、真空蒸着法等の気相成
長法により、凹状部を有する基板上に金属薄膜を形成す
る工程と、基板上に形成された金属薄膜を加熱して流動
化させる工程と、流動化した金属薄膜の金属を気体で加
圧して、凹状部内に金属薄膜の金属を凹状部内で空洞の
発生しないように埋め込む工程とを含むことを特徴とす
るものである。(Means for Solving the Problems) In order to achieve the above object, the vacuum film forming method of the present invention uses a vapor phase growth method such as a sputtering method, a CVD method, or a vacuum evaporation method to deposit a film on a substrate having a concave portion. A process of forming a metal thin film, a process of heating and fluidizing the metal thin film formed on the substrate, and pressurizing the metal of the fluidized metal thin film with gas to form the metal of the metal thin film inside the recess. The method is characterized by including a step of embedding the container so that no cavities are formed.
（実施例）
以下、この発明の実施例について図面を参照しながら説
明する。(Example) Hereinafter, an example of the present invention will be described with reference to the drawings.
まず、真空処理装置の真空槽内で、スパッタリング法に
よって、アスペクト比１以上の微細な穴又は溝よりなる
凹状部１ａを有する基板１上にＡｌ系合金の金属薄膜２
を形成すると、第１図に示されるように、凹状部ｌａ内
の中央には中空部３が発生する。First, in a vacuum chamber of a vacuum processing apparatus, a metal thin film 2 of an Al-based alloy is coated on a substrate 1 having a concave portion 1a consisting of a fine hole or groove with an aspect ratio of 1 or more by a sputtering method.
When formed, a hollow portion 3 is generated at the center of the recessed portion la, as shown in FIG.
次に、基板ｌ上に形成されたＡｆ系合金の金属薄膜２を
加熱器（図示せず）で５００℃以上に加熱して流動化さ
せると、第２図に示されるように、凹状部ｌａ内には真
空の空洞４が存在するようになる。Next, when the metal thin film 2 of the Af-based alloy formed on the substrate l is heated to 500° C. or higher using a heater (not shown) to fluidize it, as shown in FIG. A vacuum cavity 4 now exists inside.
その次に、真空槽内にＡｒ等の気体を導入して、真空槽
内の圧力を空洞４内の圧力より高くし、そのＡｒ等の気
体で流動化したＡｌ系合金の金属薄膜２を加圧すると、
真空槽内の圧力と空洞４の圧力との圧力差により、流動
化したＡＩ！系合金の金属薄膜２の金属が凹状部ｌａ内
に埋め込まれ、最初は、第３図に示されるように、凹状
部ｌａ内の空洞４が無（なる代りに、凹状部ｌａ内の中
央において、逆円錐状の中空部３ａが発生する。しかし
、最後は、Ａｆ系合金の金属薄膜２の金属の流動化によ
り、逆円錐状の中空部３ａにも、１系合金の金属薄膜２
の金属が流れ込み、第４図に示されるようにＡｆ系合金
の金属薄膜２の表面が平坦になる。Next, a gas such as Ar is introduced into the vacuum chamber to make the pressure inside the vacuum chamber higher than the pressure inside the cavity 4, and the metal thin film 2 of an Al-based alloy fluidized by the gas such as Ar is applied. When you press
Due to the pressure difference between the pressure inside the vacuum chamber and the pressure in the cavity 4, the AI becomes fluidized! The metal of the metal thin film 2 of the based alloy is embedded in the recess la, and initially, as shown in FIG. , an inverted conical hollow part 3a is generated.However, in the end, due to the fluidization of the metal in the Af-based alloy metal thin film 2, the 1-based alloy metal thin film 2 is also formed in the inverted conical hollow part 3a.
metal flows in, and the surface of the Af-based alloy metal thin film 2 becomes flat as shown in FIG.
そして、最後に、凹状部ｌａ内に流動化したＡｌ系合金
の金属薄膜２の金属を流し込んだ後に流動化したＡｌ系
合金の金属薄膜２と基板ｌとを冷却して、凹状部ｌａ内
に空洞を発生させないで、基板１上にＡｌ系合金の金属
薄膜２を形成する。Finally, after pouring the metal of the fluidized Al-based alloy metal thin film 2 into the recess la, the fluidized Al-based alloy metal thin film 2 and the substrate l are cooled, and the metal thin film 2 of the fluidized Al-based alloy is cooled to form the metal thin film 2 into the recess la. A metal thin film 2 of an Al-based alloy is formed on a substrate 1 without creating cavities.
なお、上記実施例は、第１図に示される凹状部１ａを有
する基板ｌ上へのＡｆ系合金の金属薄膜２の形成は、ス
パッタリング法によることとしているが、これに限らず
、ＣＶＤ法、真空蒸着法等の気相成長法によって、基板
ｌ上にＡｌ系合金の金属薄膜２を形成してもよい。また
、基板１上に形成されたＡｊＦ系合金の金属薄膜２の加
熱器（図示せず）での加熱は、第１図に示される凹状部
１ａを有する基板ｌ上にＡｌ系合金の金属薄膜２を形成
する真空処理装置を用いてもよ（、また異なる加熱専用
装置を用いてもよい。加熱専用装置を用いる場合には、
加熱専用装置を真空排気してから、第１図に示される金
属薄膜２を加熱し、その後、加熱専用装置にＡｒ等の気
体を導入して、凹状部ｌａ内に空洞を発生させないで、
基板１上にＡｆ系合金の金属薄膜２を形成するものであ
る。In the above embodiment, the metal thin film 2 of the Af-based alloy is formed on the substrate l having the concave portion 1a shown in FIG. The metal thin film 2 of an Al-based alloy may be formed on the substrate l by a vapor phase growth method such as a vacuum evaporation method. Further, the heating of the metal thin film 2 of AjF-based alloy formed on the substrate 1 with a heater (not shown) is performed by heating the metal thin film 2 of Al-based alloy formed on the substrate l having the concave portion 1a shown in FIG. 2 may be used (or a different heating-only device may be used. When using a heating-only device,
After evacuating the heating-only device, the metal thin film 2 shown in FIG.
A metal thin film 2 of an Af-based alloy is formed on a substrate 1.
更に、ＡｊＦ系合金の金属薄膜２の代りに、低融点金属
の薄膜を、凹状部１ａを有する基板１上に形成してもよ
い。更にその上、上記実施例において、加熱器（図示せ
ず）での加熱は凹状部１ａを有する基板１上に形成され
たＡｌ系合金の金属薄膜２を流動化させる場合を示して
いるが、加熱器（図示せず）での加熱は、これに限らず
、第１図に示される基板１上にＡ１系合金の金属薄膜２
を形成しているとき、又は、第１図に示される基板ｌ上
にＡｆ系合金の金属薄膜２を形成する前に行なってもよ
い。Furthermore, instead of the metal thin film 2 of AjF-based alloy, a thin film of a low melting point metal may be formed on the substrate 1 having the concave portion 1a. Furthermore, in the above embodiment, heating with a heater (not shown) is shown to fluidize the metal thin film 2 of an Al-based alloy formed on the substrate 1 having the concave portion 1a. Heating with a heater (not shown) is not limited to this.
It may be carried out during the formation of the metal thin film 2 of the Af-based alloy on the substrate l shown in FIG.
（発明の効果）
この発明は、上記のように凹状部を有する基板上に形成
された金属薄膜を加熱して流動化させてから、気体で加
圧して、凹状部内に流動化した金属薄膜の金属を埋め込
むようにしているので、凹状部を有する基板上に形成さ
れた金属薄膜は、凹状部内において、空洞が発生しなく
なる。(Effects of the Invention) The present invention heats and fluidizes a metal thin film formed on a substrate having a concave portion as described above, and then pressurizes the metal thin film within the concave portion. Since the metal is embedded, the metal thin film formed on the substrate having the recessed portion will not have any cavities within the recessed portion.
第１図〜第４図はこの発明の実施例を示しており、第１
図は、スパッタリング法によって、凹状部１ａを有する
基板ｌ上にＡｌ系合金の金属薄膜２を形成したときの説
明図、第２図は、基板１上に形成されたＡｆ系合金の金
属薄膜２を加熱器（図示せず）で加熱して流動化させた
ときの説明図、第３図は、流動化したＡｌ系合金の金属
薄膜２をＡｒ等の気体で加圧し、圧力差で凹状部ｌａ内
に流動化したＡｌ系合金の金属薄膜２の金属を埋め込む
だときの説明図、第４図はＡｌ系合金の金属薄膜２の金
属の流動化により、逆円錐状の中空部３にもＡｆ系合金
の金属薄膜２の金属が埋め込まれたときの説明図である
。第５図〜第７図は従来の方法を示しており、第５図は
、スパッタリング法によって、凹状部１ａを有する基板
１上にＡｌ系合金の金属薄膜２を形成したときの説明図
、第６図は、凹状部ｌａ内をＡｌ系合金の金属薄膜２の
金属で全部埋め込んだときの説明図、第７図は、凹状部
ｌａ内に金属薄膜２の金属で囲まれた空洞４が存在する
説明図である。
図中、
■・・・・
１ａ・・・・
２・・・・
３・・・・
３ａ・目・
４・・・・
なお、図中、
示している。
・・基板
・・凹状部
・・金属薄膜
・・中空部
・・逆円錐状の中空部
・・空洞
同一符号は同一または相当部分を1 to 4 show embodiments of this invention, and the first
The figure is an explanatory diagram when a metal thin film 2 of an Al-based alloy is formed on a substrate l having a concave portion 1a by sputtering method, and FIG. Fig. 3 is an explanatory diagram of the case where the metal thin film 2 of the fluidized Al-based alloy is pressurized with a gas such as Ar, and the concave portion is formed by the pressure difference. Fig. 4 is an explanatory diagram of embedding the metal of the fluidized Al-based metal thin film 2 in the la, and FIG. FIG. 3 is an explanatory diagram when the metal of the metal thin film 2 of an Af-based alloy is embedded. 5 to 7 show a conventional method, and FIG. 5 is an explanatory diagram when a metal thin film 2 of Al-based alloy is formed on a substrate 1 having a concave portion 1a by a sputtering method. Fig. 6 is an explanatory diagram when the inside of the recess la is completely filled with the metal of the thin metal film 2 of Al-based alloy, and Fig. 7 shows the existence of a cavity 4 surrounded by the metal of the thin metal film 2 within the recess la. FIG. In the figure, ■... 1a... 2... 3... 3a, 4... In the figure, it is indicated.・Substrate ・Concave portion ・Metal thin film ・Hollow portion ・Inverted conical hollow portion ・Cavity The same reference numerals refer to the same or equivalent parts.
Claims (1)
法により、凹状部を有する基板上に金属薄膜を形成する
工程と、基板上に形成された金属薄膜を加熱して流動化
させる工程と、流動化した金属薄膜の金属を気体で加圧
して、凹状部内に金属薄膜の金属を凹状部内で空洞の発
生しないように埋め込む工程とを含むことを特徴とする
真空成膜方法。A step of forming a metal thin film on a substrate having a concave portion by a vapor phase growth method such as a sputtering method, a CVD method, or a vacuum evaporation method; a step of heating and fluidizing the metal thin film formed on the substrate; A vacuum film forming method comprising the step of pressurizing the fluidized metal of the thin metal film with gas to embed the metal of the metal thin film in the recessed portion so as not to form a cavity within the recessed portion.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1023427A JP2660040B2 (en) | 1989-02-01 | 1989-02-01 | Vacuum deposition method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1023427A JP2660040B2 (en) | 1989-02-01 | 1989-02-01 | Vacuum deposition method |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH02205678A true JPH02205678A (en) | 1990-08-15 |
| JP2660040B2 JP2660040B2 (en) | 1997-10-08 |
Family
ID=12110208
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP1023427A Expired - Lifetime JP2660040B2 (en) | 1989-02-01 | 1989-02-01 | Vacuum deposition method |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2660040B2 (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5527561A (en) * | 1991-05-28 | 1996-06-18 | Electrotech Limited | Method for filing substrate recesses using elevated temperature and pressure |
| US6171957B1 (en) | 1997-07-16 | 2001-01-09 | Mitsubishi Denki Kabushiki Kaisha | Manufacturing method of semiconductor device having high pressure reflow process |
| US6323120B1 (en) | 1999-03-18 | 2001-11-27 | Kabushiki Kaisha Kobe Seiko | Method of forming a wiring film |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS63216972A (en) * | 1987-03-06 | 1988-09-09 | Furendotetsuku Kenkyusho:Kk | Method for reflowing thin aluminum film |
-
1989
- 1989-02-01 JP JP1023427A patent/JP2660040B2/en not_active Expired - Lifetime
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS63216972A (en) * | 1987-03-06 | 1988-09-09 | Furendotetsuku Kenkyusho:Kk | Method for reflowing thin aluminum film |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5527561A (en) * | 1991-05-28 | 1996-06-18 | Electrotech Limited | Method for filing substrate recesses using elevated temperature and pressure |
| US6171957B1 (en) | 1997-07-16 | 2001-01-09 | Mitsubishi Denki Kabushiki Kaisha | Manufacturing method of semiconductor device having high pressure reflow process |
| US6323120B1 (en) | 1999-03-18 | 2001-11-27 | Kabushiki Kaisha Kobe Seiko | Method of forming a wiring film |
Also Published As
| Publication number | Publication date |
|---|---|
| JP2660040B2 (en) | 1997-10-08 |
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