JPH02203527A - Etching process - Google Patents
Etching processInfo
- Publication number
- JPH02203527A JPH02203527A JP2259689A JP2259689A JPH02203527A JP H02203527 A JPH02203527 A JP H02203527A JP 2259689 A JP2259689 A JP 2259689A JP 2259689 A JP2259689 A JP 2259689A JP H02203527 A JPH02203527 A JP H02203527A
- Authority
- JP
- Japan
- Prior art keywords
- melting point
- point metal
- high melting
- etching
- film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000005530 etching Methods 0.000 title claims abstract description 58
- 238000000034 method Methods 0.000 title claims abstract description 33
- 229910052751 metal Inorganic materials 0.000 claims abstract description 63
- 239000002184 metal Substances 0.000 claims abstract description 63
- 238000002844 melting Methods 0.000 claims abstract description 62
- 230000008018 melting Effects 0.000 claims abstract description 53
- 229910052731 fluorine Inorganic materials 0.000 claims abstract description 16
- 239000011737 fluorine Substances 0.000 claims abstract description 16
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 claims abstract description 15
- 230000001590 oxidative effect Effects 0.000 claims abstract description 9
- KZBUYRJDOAKODT-UHFFFAOYSA-N Chlorine Chemical compound ClCl KZBUYRJDOAKODT-UHFFFAOYSA-N 0.000 claims abstract description 8
- 229910021332 silicide Inorganic materials 0.000 claims description 25
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 claims description 24
- 238000001312 dry etching Methods 0.000 abstract description 11
- 238000001020 plasma etching Methods 0.000 abstract description 8
- 239000004065 semiconductor Substances 0.000 abstract description 8
- 239000000460 chlorine Substances 0.000 abstract description 7
- 229910052801 chlorine Inorganic materials 0.000 abstract description 7
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 abstract description 6
- 239000000758 substrate Substances 0.000 abstract description 4
- 229920003986 novolac Polymers 0.000 abstract description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract description 2
- 229910052814 silicon oxide Inorganic materials 0.000 abstract description 2
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 abstract description 2
- 229910052721 tungsten Inorganic materials 0.000 abstract description 2
- 239000010937 tungsten Substances 0.000 abstract description 2
- 239000007789 gas Substances 0.000 description 44
- 230000000052 comparative effect Effects 0.000 description 9
- 238000010586 diagram Methods 0.000 description 6
- 239000010410 layer Substances 0.000 description 5
- VZGDMQKNWNREIO-UHFFFAOYSA-N tetrachloromethane Chemical compound ClC(Cl)(Cl)Cl VZGDMQKNWNREIO-UHFFFAOYSA-N 0.000 description 4
- VEXZGXHMUGYJMC-UHFFFAOYSA-M Chloride anion Chemical compound [Cl-] VEXZGXHMUGYJMC-UHFFFAOYSA-M 0.000 description 3
- 229910018503 SF6 Inorganic materials 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 150000002739 metals Chemical class 0.000 description 3
- 230000001681 protective effect Effects 0.000 description 3
- 239000003870 refractory metal Substances 0.000 description 3
- SFZCNBIFKDRMGX-UHFFFAOYSA-N sulfur hexafluoride Chemical compound FS(F)(F)(F)(F)F SFZCNBIFKDRMGX-UHFFFAOYSA-N 0.000 description 3
- 229960000909 sulfur hexafluoride Drugs 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 2
- 238000001459 lithography Methods 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 239000002356 single layer Substances 0.000 description 2
- TXEYQDLBPFQVAA-UHFFFAOYSA-N tetrafluoromethane Chemical compound FC(F)(F)F TXEYQDLBPFQVAA-UHFFFAOYSA-N 0.000 description 2
- 239000010936 titanium Substances 0.000 description 2
- FAQYAMRNWDIXMY-UHFFFAOYSA-N trichloroborane Chemical compound ClB(Cl)Cl FAQYAMRNWDIXMY-UHFFFAOYSA-N 0.000 description 2
- NXHILIPIEUBEPD-UHFFFAOYSA-H tungsten hexafluoride Chemical compound F[W](F)(F)(F)(F)F NXHILIPIEUBEPD-UHFFFAOYSA-H 0.000 description 2
- KRHYYFGTRYWZRS-UHFFFAOYSA-M Fluoride anion Chemical compound [F-] KRHYYFGTRYWZRS-UHFFFAOYSA-M 0.000 description 1
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 1
- CBENFWSGALASAD-UHFFFAOYSA-N Ozone Chemical compound [O-][O+]=O CBENFWSGALASAD-UHFFFAOYSA-N 0.000 description 1
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- HIWZVVSOUSVVFK-UHFFFAOYSA-N [Hf+] Chemical compound [Hf+] HIWZVVSOUSVVFK-UHFFFAOYSA-N 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000012159 carrier gas Substances 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 125000001309 chloro group Chemical group Cl* 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 239000007772 electrode material Substances 0.000 description 1
- 230000005284 excitation Effects 0.000 description 1
- -1 fluorides Chemical class 0.000 description 1
- 150000002222 fluorine compounds Chemical class 0.000 description 1
- WMIYKQLTONQJES-UHFFFAOYSA-N hexafluoroethane Chemical compound FC(F)(F)C(F)(F)F WMIYKQLTONQJES-UHFFFAOYSA-N 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 125000004435 hydrogen atom Chemical class [H]* 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 238000004518 low pressure chemical vapour deposition Methods 0.000 description 1
- 238000001755 magnetron sputter deposition Methods 0.000 description 1
- 238000001819 mass spectrum Methods 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 239000011733 molybdenum Substances 0.000 description 1
- QKCGXXHCELUCKW-UHFFFAOYSA-N n-[4-[4-(dinaphthalen-2-ylamino)phenyl]phenyl]-n-naphthalen-2-ylnaphthalen-2-amine Chemical compound C1=CC=CC2=CC(N(C=3C=CC(=CC=3)C=3C=CC(=CC=3)N(C=3C=C4C=CC=CC4=CC=3)C=3C=C4C=CC=CC4=CC=3)C3=CC4=CC=CC=C4C=C3)=CC=C21 QKCGXXHCELUCKW-UHFFFAOYSA-N 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- VSZWPYCFIRKVQL-UHFFFAOYSA-N selanylidenegallium;selenium Chemical compound [Se].[Se]=[Ga].[Se]=[Ga] VSZWPYCFIRKVQL-UHFFFAOYSA-N 0.000 description 1
- 229910000077 silane Inorganic materials 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
Landscapes
- ing And Chemical Polishing (AREA)
- Drying Of Semiconductors (AREA)
Abstract
Description
【発明の詳細な説明】
〔産業上の利用分野〕
本発明は、半導体装置製造工程において利用される高融
点金属膜および／または高融点金属シリサイド膜のエツ
チング方法に関する。DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to a method of etching a high melting point metal film and/or a high melting point metal silicide film used in a semiconductor device manufacturing process.
本発明は、半導体装置製造工程において利用される高融
点金属膜および／または高融点金属シリサイド膜のエツ
チング方法に関し、更に詳しくは、エツチング後の配線
パターン等の断面形状（以下、エツチングプロファイル
という）に優れ、エツチング残渣のない異方性ドライエ
ツチング方法に関する。The present invention relates to a method for etching a high melting point metal film and/or a high melting point metal silicide film used in a semiconductor device manufacturing process, and more specifically, to a method for etching a cross-sectional shape of a wiring pattern etc. after etching (hereinafter referred to as an etching profile). This invention relates to an anisotropic dry etching method which is excellent and does not leave etching residues.
ＬＳＩ等の半導体装置の高集積度化の進展に伴ない、タ
ングステン（−）等の高融点金属膜および／または高融
点金属シリサイド膜は、次世代ＬＳ。With the progress of higher integration of semiconductor devices such as LSI, high melting point metal films such as tungsten (-) and/or high melting point metal silicide films are becoming the next generation LS.
ｌの配線材料やゲート電極材料等として注目されている
。これは、高融点金属膜および／または高融点金属シリ
サイド膜のシート抵抗値が小さいためにＬＳＩの高速化
が期待でき、また耐熱性に冨むため、界面における熱拡
散等の現象が少ないこと等の理由による。It is attracting attention as a wiring material for l, a gate electrode material, etc. This is because high-melting point metal films and/or high-melting point metal silicide films have small sheet resistance values, which can be expected to increase the speed of LSIs, and because they have high heat resistance, phenomena such as thermal diffusion at interfaces are small. Due to reasons.
高融点金属膜および／または高融点金属シリサイド膜は
、通常はスパッタリングやブランケットＣＶＤにより形
成され、所望の配線パターン等にエツチングして用いら
れる。このエツチング方法としては、サブミクロン前後
の微細加工の要求に応えるため、反応性イオンエツチン
グ（ＲＩＥ）等の異方性の大きいドライエツチング技術
が用いられ、このときのエツチングガスとしては、エツ
チングレートの大きい六フッ化イオウ（ＳＦ６）等のフ
ッ素系ガスが一般的には用いられてきた。The high melting point metal film and/or the high melting point metal silicide film is usually formed by sputtering or blanket CVD, and used by etching into a desired wiring pattern or the like. This etching method uses highly anisotropic dry etching technology such as reactive ion etching (RIE) in order to meet the demands for microfabrication around submicron. Fluorine-based gases such as large sulfur hexafluoride (SF6) have generally been used.
この場合問題となるのは、−等の高融点金属膜および／
または高融点金属シリサイド膜とフッ素ラジカルとの反
応により、エツチングプロファイルに逆テーバ状にアン
ダカットが入ることであった。In this case, the problem is that the high melting point metal film and/or
Alternatively, the reaction between the high melting point metal silicide film and fluorine radicals caused an undercut in the etching profile to have a reverse tapered shape.
そこで本発明者は、先にフッ素系ガスに塩素系ガスを加
えた混合ガスをエツチングガスとして用いる方法を提示
した（特願昭６３−１８５２４４号）。この方法は、−
等の高融点金属のフッ化物（ＷＦ、 ）に比べて、蒸気
圧の小さな塩化物（ＷＣｌ、 ）を生成させ、これをエ
ツチング進行中のパターンの側壁に再付着させ、側壁保
護膜として作用させることで異方性ドライエツチングを
達成しようというものであった。Therefore, the present inventor previously proposed a method of using a mixed gas of fluorine gas and chlorine gas as an etching gas (Japanese Patent Application No. 185244/1983). This method is -
It generates chloride (WCl, ) which has a lower vapor pressure than the fluoride (WF, ) of high-melting point metals such as fluorides, and re-deposit it on the sidewalls of the pattern that is being etched to act as a sidewall protective film. The idea was to achieve anisotropic dry etching.
上述した高融点金属膜および／または高融点金属シリサ
イド膜のエツチング方法によれば、アンダカットを防ぐ
ことが可能となるが、蒸気圧の小さな塩化物を生成する
ため、これが残渣として残り易く、またエツチングプロ
ファイルが、若干ではあるが逆に順テーパ状になり易い
ことがあった。According to the above-mentioned method of etching a high melting point metal film and/or a high melting point metal silicide film, it is possible to prevent undercutting, but since chloride is generated with a low vapor pressure, this tends to remain as a residue. In some cases, the etching profile tends to become tapered, albeit slightly.
そこで本発明の課題は、−等の高融点金属膜および／ま
たは高融点金属シリサイド膜を異方性ド。Therefore, an object of the present invention is to form a high melting point metal film and/or a high melting point metal silicide film in an anisotropic manner.
ライエツチングするにあたり、エツチングプロファイル
にアンダカットが入らず、順テーパ状にもならず、はぼ
矩形にエツチングされ、しかも残渣の発生のないエツチ
ング方法を提供することである。To provide an etching method in which an etching profile is not undercut, does not have a tapered shape, is etched into a substantially rectangular shape, and does not generate any residue.
〔課題を解決するための手段］
フッ素系ガスと塩素系ガスの混合ガスに、新たに酸化性
ガスを添加した混合ガスにより、高融点金属膜および／
または高融点シリサイド膜をＲＩＥ法等により異方性ド
ライエツチングすることにより、前記課題が達成される
。[Means for solving the problem] A mixed gas of a fluorine-based gas and a chlorine-based gas with a newly added oxidizing gas is used to form a high melting point metal film and/or a mixed gas.
Alternatively, the above object can be achieved by anisotropically dry etching the high melting point silicide film by RIE method or the like.
本発明に用いる酸化性ガスとしては、酸素（０□）、オ
ゾン（０３）またはこれらの混合ガスを用いることがで
きる。As the oxidizing gas used in the present invention, oxygen (0□), ozone (03), or a mixed gas thereof can be used.
フッ素系ガスと塩素系ガスの混合ガスへの前記酸化性ガ
スの添加割合は、フッ素系ガスと塩素系ガスの混合ガス
の和体積を１００とした場合、１体積以上５０体積以下
が望ましく、２体積以上ＩＯ体積以下が更に望ましい。The addition ratio of the oxidizing gas to the mixed gas of fluorine-based gas and chlorine-based gas is preferably 1 volume or more and 50 volumes or less, when the total volume of the mixed gas of fluorine-based gas and chlorine-based gas is 100. More preferably, the volume is greater than or equal to IO volume.
フッ素系ガスとしては前述したＳＦ６の他に、四フッ化
炭素（ＣＦ４）、三フッ化窒素（Ｎｈ） 、六フッ化エ
タン（ＣｚＦ６）、フッ素（Ｆ２）等が用いられ、また
塩素系ガスとしては塩素（ＣＩり 、四塩化炭素（ＣＣ
１４）、三塩化ホウ素（ＢＣｌ２）等を使用することが
できる。フッ素系ガスと塩素系ガスの混合体積比は３０
１５〜３０／４５であり、３０／２８程度が特に好まし
いことは先発明（特願昭６３−１８５２４４号）と同じ
である。In addition to SF6 mentioned above, carbon tetrafluoride (CF4), nitrogen trifluoride (Nh), hexafluoroethane (CzF6), fluorine (F2), etc. are used as fluorine-based gases, and chlorine-based gases include is chlorine (CI), carbon tetrachloride (CC)
14), boron trichloride (BCl2), etc. can be used. The mixing volume ratio of fluorine gas and chlorine gas is 30
It is the same as the previous invention (Japanese Patent Application No. 63-185244) that the ratio is 15 to 30/45, and about 30/28 is particularly preferable.
フッ素系ガス、塩素系ガスおよび酸化性ガスの混合ガス
により一等高融点金属膜および／または高融点金属シリ
サイド膜をエツチングすることにより、讐等高融点金属
のオキシ塩化物（ＷＯＣｌｙ）が生成し、これがエツチ
ング進行中のパターンの側壁に再付着して側壁保護膜と
して作用する。By etching a high melting point metal film and/or a high melting point metal silicide film with a mixed gas of fluorine gas, chlorine gas, and oxidizing gas, oxychlorides of high melting point metals (WOCly) are generated. , which re-attaches to the sidewalls of the pattern that is being etched and acts as a sidewall protective film.
ＷＯＣＩｙはｙ−１，２および３の化合物の混合物であ
ることがマススペクトルの分析結果より確認されている
（第３５回応用物理学関係連合講演会講演予稿集、３１
ａ−シー３．１９８８年春季）。これらオキシ塩化物は
、同じ一等高融点金属の塩化物（ＷＣｌ、 ）よりも若
干高い蒸気圧を持つ（例えば第３０回応用物理学関係連
合講演会講演予稿集、５ａ−Ｖ−３，１９８３年春季）
。このため側壁保護膜としての作用は、ＷＣＩＸより−
ｏｃｘｙＯ方が若干小さく、このためエツチングプロフ
ァイルが順テーバ状となることがない。 また同じ理由
により、エツチング残渣が生成することがない。It has been confirmed from the mass spectrum analysis results that WOCIy is a mixture of compounds y-1, 2, and 3 (Proceedings of the 35th Applied Physics Association Conference, 31
a-C 3. Spring 1988). These oxychlorides have a slightly higher vapor pressure than chloride (WCl), which is the same primary high-melting point metal (e.g., Proceedings of the 30th Applied Physics Association Conference, 5a-V-3, 1983). spring)
. Therefore, the action as a sidewall protective film is lower than that of WCIX.
ocxyO is slightly smaller, so the etching profile does not become tapered. Furthermore, for the same reason, no etching residue is generated.
以上の作用により、エツチングプロファイルの矩形性に
優れ、エツチング残渣発生のトラブルのない一等高融点
金属膜および／または高融点金属シリサイド膜の異方性
ドライエツチングが可能となる。The above-described effects enable anisotropic dry etching of a primary high melting point metal film and/or a high melting point metal silicide film with excellent rectangularity of the etching profile and without the problem of generation of etching residue.
以下、本発明の実施例について図面を参照しながら説明
する。Embodiments of the present invention will be described below with reference to the drawings.
失１１上
第１図ａ −ｃは本発明の第１の実施例によるエツチン
グ工程を示す図である。Figures 1a-c are diagrams illustrating an etching process according to a first embodiment of the present invention.
第１図ａにおいて、シリコン等の半導体基板４上に酸化
シリコン（Ｓｉｎｇ）のごとき絶縁膜３を形成し、次に
例えば賀による高融点金属膜１を２５００人の厚さに、
例えばＤＣマグネトロンスパッタリング法により形成す
る。次にノボラック系ポジ型レジスト５をスピンコーテ
ィングし乾燥する。In FIG. 1A, an insulating film 3 such as silicon oxide (Sing) is formed on a semiconductor substrate 4 such as silicon, and then a high-melting point metal film 1 made by, for example, Kaga is formed to a thickness of 2500 mm.
For example, it is formed by a DC magnetron sputtering method. Next, a novolak positive type resist 5 is spin coated and dried.
次に第１図すに示すごと（、リソグラフィ工程によりレ
ジスト５を配線パターン通りに残す。Next, as shown in FIG. 1, the resist 5 is left in accordance with the wiring pattern by a lithography process.
さらに１３．５６ＭＨｚのＲＦ励起方式の平行平板型Ｒ
ＩＥ装置により、異方性ドライエツチングを行う。In addition, a parallel plate type R with 13.56 MHz RF excitation method
Anisotropic dry etching is performed using an IE device.
エツチングガスとしてＳＦ、 ３０ｓｃｃｍＳＣ１ｔ２
８ｓｃｃａ＋およびＯｘ ２ｓｃｃｍの混合ガスを用い
、エツチングチャンバ内圧力６．７ＰａＳＲＦ出力８０
ｍＷ／ｃｎ＋”の条件によった。SF as etching gas, 30sccmSC1t2
Using a mixed gas of 8 scca+ and Ox 2 sccm, the etching chamber internal pressure was 6.7 Pa and the SRF output was 80
mW/cn+'' condition.
以上の工程により、第１図Ｃに示されるように、高融点
金属膜１は配線パターンとして残される。Through the above steps, the high melting point metal film 1 is left as a wiring pattern, as shown in FIG. 1C.
同図より明らかなように、高融点金属膜１のエツチング
プロファイルはほぼ矩形に近く、エツチング残渣は見ら
れなかった。As is clear from the figure, the etching profile of the high melting point metal film 1 was nearly rectangular, and no etching residue was observed.
実施■又
本実施例は、高融点金属膜の下層として、高融点金属シ
リサイド膜を設け、下地絶縁膜との密着性を改善した、
高融点金属多層膜の異方性ドライエツチングの例である
。Implementation ■Also, in this example, a high melting point metal silicide film was provided as a lower layer of the high melting point metal film to improve the adhesion with the underlying insulating film.
This is an example of anisotropic dry etching of a high melting point metal multilayer film.
本発明の第２の実施例によるエツチング工程を示す第２
図ａ −ｃにおいて、まず同図ａに示すごとく、シリコ
ン等の半導体基板４上に５ｉｎｔ等のごとき絶縁膜３を
形成する０次にブランケットＣ■Ｄにより、例えば−Ｓ
ｉｘ等の高融点金属シリサイド膜２を５００人の厚さに
、続けて−による高融点金属膜１を２０００人の厚さに
形成して高融点金属多層膜とする。この形成法としては
、ソースガスとして六フッ化タングステン（ＷＦ６）
とシラン（ＳｉＨｎ）、キャリアガスとして水素（Ｆｌ
りを用いて高融点金属シリサイド膜２を、次に朴、とＨ
２を用いて高融点金属膜１を、それぞれ減圧ＣＶＤ法に
より形成した。このあとノボラック系ポジ型レジスト５
をスピンコーティングして乾燥した。A second diagram illustrating an etching process according to a second embodiment of the present invention.
In Figures a to c, first, as shown in Figure a, an insulating film 3 of 5 int or the like is formed on a semiconductor substrate 4 of silicon or the like using a zero order blanket C■D, for example -S
A high melting point metal silicide film 2 such as ix is formed to a thickness of 500 mm, followed by a high melting point metal film 1 of - to a thickness of 2000 mm to form a high melting point metal multilayer film. This formation method uses tungsten hexafluoride (WF6) as a source gas.
and silane (SiHn), and hydrogen (Fl) as a carrier gas.
The high melting point metal silicide film 2 was coated using
A high melting point metal film 1 was formed using each of the above materials by low pressure CVD method. After this, novolac positive resist 5
was spin coated and dried.
次に第２図すに示すように、リソグラフィ工程によりレ
ジスト５を配線パターン通りに残す。Next, as shown in FIG. 2, the resist 5 is left in accordance with the wiring pattern by a lithography process.
次に実施例１と全く同様のＲＩＥ装置、エツチングガス
およびエツチング条件により、第２図Ｃのごとく高融点
金属多層膜を配線パターンとして残す。同図より明らか
なように、高融点金属多層膜のエツチングプロファイル
はほぼ矩形に近く、またエツチング残渣は見られなかっ
た。Next, using the same RIE apparatus, etching gas, and etching conditions as in Example 1, a high melting point metal multilayer film is left as a wiring pattern as shown in FIG. 2C. As is clear from the figure, the etching profile of the high melting point metal multilayer film was nearly rectangular, and no etching residue was observed.
迄較去上
本比較例では、エツチングガスとして従来例によるフッ
素系ガスと塩素系ガスのみの混合ガスを用いた他は、実
施例１と全く同様にして例えばイによる高融点金属膜工
をエツチングした例である。Previous Comparisons In this comparative example, a high melting point metal film, for example, was etched in the same manner as in Example 1, except that a mixed gas of only fluorine gas and chlorine gas according to the conventional example was used as the etching gas. This is an example.
エツチングガスとして、ＳＦｈ ３０ｓｅｃｍと、Ｃ１
ｔ２８ｓｅｃｍの混合ガスを流した。ＲＩＢによる異方
性ドライエツチング終了後のエツチングプロファイルを
第３図に示す、同図に見られるように、高融点金属膜ｌ
はやや順テーバ状のエツチングプロファイルであり、ま
た蒸気圧の小さな−Ｃ１，からなる残渣６が認められた
。As etching gas, SFh 30sec and C1
A mixed gas of t28 sec was flowed. Figure 3 shows the etching profile after the anisotropic dry etching by RIB.
The etching profile was slightly forward-tapered, and residue 6 consisting of -C1, which had a small vapor pressure, was observed.
本比較例の結果は、高融点金属膜１の下層とし。The results of this comparative example are based on the lower layer of the high melting point metal film 1.
て高融点金属シリサイド膜を設けた高融点金属多層膜に
おいても、同じ結果であった。The same results were obtained for a high melting point metal multilayer film in which a high melting point metal silicide film was provided.
止較■又
本比較例では、エツチングガスとして従来例通りフッ素
系ガスのみを使用し、他は実施例１と全く同様にして、
例えば−による高融点金属膜１をエツチングした例であ
る。Comparative Example ■In addition, in this comparative example, only fluorine-based gas was used as the etching gas as in the conventional example, and the other conditions were exactly the same as in Example 1.
For example, this is an example in which the high melting point metal film 1 is etched by -.
エツチングガスとしては、ＳＦａ ３０ｓｃｃｍのみを
流した。ＲＩＥによる異方性ドライエツチング終了後の
エツチングプロファイルを第４図に示す。同図に見られ
るように、高融点金属膜１は逆テーパ状にアンダカット
の入ったエツチングプロファイルであった。As the etching gas, only SFa at 30 sccm was flowed. FIG. 4 shows an etching profile after completion of anisotropic dry etching by RIE. As seen in the figure, the high melting point metal film 1 had an etched profile with an undercut in a reverse tapered shape.
本比較例の結果は、高融点金属膜１の下層として高融点
金属シリサイド膜を設けた高融点金属多層膜においても
同じ結果であった。The results of this comparative example were the same for a refractory metal multilayer film in which a refractory metal silicide film was provided as the lower layer of the refractory metal film 1.
以上、本発明の実施例について詳述したが、本発明に用
いられる酸化性ガスの添加割合は、フッ素系ガスと塩素
系ガスの混合ガスの和体積をｌＯＯとした場合、１体積
以上５０体積以下が望ましく、２体積以上１０体積以下
が更に好ましい。１体積に満たないと高融点金属膜およ
び／または高融点金属シリサイド膜のエツチングプロフ
ァイルがやや順テーパ状のままに留まり易く、また残渣
の発生を抑えることが難しい。一方、５０体積を越える
と、レジストの膜減りが大きくなり、実用性に劣る。Although the embodiments of the present invention have been described in detail above, the addition ratio of the oxidizing gas used in the present invention is 1 volume or more and 50 volumes when the total volume of the mixed gas of fluorine gas and chlorine gas is lOO. The following is desirable, and the volume is more preferably 2 or more and 10 or less. If the volume is less than 1 volume, the etching profile of the high melting point metal film and/or the high melting point metal silicide film tends to remain slightly tapered, and it is difficult to suppress the generation of residue. On the other hand, if the volume exceeds 50, the resist film will be reduced significantly and will be impractical.
要はエツチングプロファイルの形状と残渣の発生を観察
しながら、前記添加割合の範囲内で酸化性ガスを適宜添
加すればよい。In short, the oxidizing gas may be appropriately added within the range of the above-mentioned addition ratio while observing the shape of the etching profile and the generation of residue.
本発明によるエツチング方法は、実施例で取り上げたー
の他にモリブデン（Ｍｏ）、タンタル（Ｔａ）、チタン
（Ｔｉ） 、ジルコニウム（Ｚｒ） 、ハフニウム（Ｉ
ｆ）等による高融点金属膜および／または高融点金属シ
リサイド膜に適用することができる。これら高融点金属
の単体膜、高融点金属シリサイドの単体膜、また下地絶
縁膜との密着性改善のため、高融点金属シリサイド膜の
上に高融点金属膜を設けた２層膜、更にこの上に酸化防
止のために高融点金属シリサイド膜を設けた３層膜等、
高融点金属多層膜に本発明のエツチング方法を適用して
好結果をおさめることができた。The etching method according to the present invention can be applied to etching materials such as molybdenum (Mo), tantalum (Ta), titanium (Ti), zirconium (Zr), and hafnium (I) in addition to those mentioned in the examples.
f) etc. can be applied to a high melting point metal film and/or a high melting point metal silicide film. These single-layer films of high-melting point metals, single-layer films of high-melting-point metal silicides, double-layer films in which a high-melting-point metal film is provided on a high-melting-point metal silicide film, and furthermore, to improve adhesion with the underlying insulating film. 3-layer film with a high melting point metal silicide film to prevent oxidation, etc.
The etching method of the present invention was applied to a high melting point metal multilayer film with good results.
高融点金属膜および／または高融点金属シリサイド膜を
ＲＩＥ法等により異方性ドライエツチングするにあたり
、フッ素系ガス、塩素系ガスおよび酸化性ガスの混合ガ
スをエツチングガスとして用いることにより、従来のエ
ツチング方法で問題とされ未解決であったアンダカット
や順テーパ状カット、あるいは残渣の発生等のトラブル
が解決できた。When performing anisotropic dry etching of a high melting point metal film and/or a high melting point metal silicide film by RIE method etc., by using a mixed gas of fluorine gas, chlorine gas and oxidizing gas as the etching gas, conventional etching can be performed. Problems such as undercuts, forward tapered cuts, and the generation of residues, which were unresolved problems with the method, were resolved.
すなわち、矩形状であって、しかも残渣発生のない優れ
たエツチングプロファイルをもつ高融点金属膜および／
または高融点金属シリサイド膜の配線パターン等が得ら
れるので、次世代ＬＳＩ等の半導体装置製造における寄
与は大きい。In other words, a high melting point metal film and/or a rectangular shape with an excellent etching profile without generating any residue.
Alternatively, wiring patterns of high-melting point metal silicide films can be obtained, making a large contribution to the production of semiconductor devices such as next-generation LSIs.
第１図は本発明の第１の実施例によるエツチング工程を
示す図、第２図は本発明の第２の実施例によるエツチン
グ工程を示す図、第３図は比較例１によるエツチングプ
ロファイルを示す図、第４図は比較例２によるエツチン
グプロファイルを示す図である。
１ −高融点金属膜
２ 高融点金属シリサイド膜
３−・ −絶縁膜
４ 半導体基板
５−−−−−−−−−−−−・−レジスト６・−・−・
−一−−−−−−−・残渣エッチング二ノ呈と示す図
比較（グｌＪｌ＋：Ｊ：るエツチングプロファイ／Ｌ、
と示す図第３図
比較例２によるエツチングプロファイルと示す図第４図FIG. 1 is a diagram showing an etching process according to a first embodiment of the present invention, FIG. 2 is a diagram showing an etching process according to a second embodiment of the present invention, and FIG. 3 is a diagram showing an etching profile according to Comparative Example 1. FIG. 4 is a diagram showing an etching profile according to Comparative Example 2. 1 - High-melting point metal film 2 High-melting point metal silicide film 3 - - Insulating film 4 Semiconductor substrate 5 ---------------Resist 6 - - -
−1−−−−−−・Residue etching 2. Figure comparison (Gl Jl+: J: Etching profile/L,
Figure 3 shows the etching profile of Comparative Example 2. Figure 4 shows the etching profile of Comparative Example 2.
Claims (1)
合ガスにより、高融点金属膜および／または高融点金属
シリサイド膜をエッチングすることを特徴とするエッチ
ング方法。An etching method characterized by etching a high melting point metal film and/or a high melting point metal silicide film with a mixed gas consisting of a fluorine gas, a chlorine gas, and an oxidizing gas.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2259689A JP2923962B2 (en) | 1989-02-02 | 1989-02-02 | Etching method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2259689A JP2923962B2 (en) | 1989-02-02 | 1989-02-02 | Etching method |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH02203527A true JPH02203527A (en) | 1990-08-13 |
| JP2923962B2 JP2923962B2 (en) | 1999-07-26 |
Family
ID=12087221
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2259689A Expired - Fee Related JP2923962B2 (en) | 1989-02-02 | 1989-02-02 | Etching method |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2923962B2 (en) |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH04254326A (en) * | 1991-02-06 | 1992-09-09 | Nec Corp | Dry etching method of silicide film |
| US5871659A (en) * | 1995-06-19 | 1999-02-16 | Nippondenso Co., Ltd. | Dry etching process for semiconductor |
| KR100445060B1 (en) * | 1997-06-30 | 2004-11-16 | 주식회사 하이닉스반도체 | Method of forming metal line of semiconductor device for securing process margin |
| JP2014075593A (en) * | 2013-11-22 | 2014-04-24 | Semiconductor Energy Lab Co Ltd | Method for manufacturing wiring |
| US9045831B2 (en) | 1999-07-22 | 2015-06-02 | Semiconductor Energy Laboratory Co., Ltd. | Wiring and manufacturing method thereof, semiconductor device comprising said wiring, and dry etching method |
-
1989
- 1989-02-02 JP JP2259689A patent/JP2923962B2/en not_active Expired - Fee Related
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH04254326A (en) * | 1991-02-06 | 1992-09-09 | Nec Corp | Dry etching method of silicide film |
| US5871659A (en) * | 1995-06-19 | 1999-02-16 | Nippondenso Co., Ltd. | Dry etching process for semiconductor |
| KR100445060B1 (en) * | 1997-06-30 | 2004-11-16 | 주식회사 하이닉스반도체 | Method of forming metal line of semiconductor device for securing process margin |
| US9045831B2 (en) | 1999-07-22 | 2015-06-02 | Semiconductor Energy Laboratory Co., Ltd. | Wiring and manufacturing method thereof, semiconductor device comprising said wiring, and dry etching method |
| JP2014075593A (en) * | 2013-11-22 | 2014-04-24 | Semiconductor Energy Lab Co Ltd | Method for manufacturing wiring |
Also Published As
| Publication number | Publication date |
|---|---|
| JP2923962B2 (en) | 1999-07-26 |
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