JPH0220329U - - Google Patents
Info
- Publication number
- JPH0220329U JPH0220329U JP9741988U JP9741988U JPH0220329U JP H0220329 U JPH0220329 U JP H0220329U JP 9741988 U JP9741988 U JP 9741988U JP 9741988 U JP9741988 U JP 9741988U JP H0220329 U JPH0220329 U JP H0220329U
- Authority
- JP
- Japan
- Prior art keywords
- base
- suction hole
- wafer box
- reduced pressure
- pressure suction
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000004140 cleaning Methods 0.000 claims description 4
- 238000002347 injection Methods 0.000 claims 1
- 239000007924 injection Substances 0.000 claims 1
- 238000010586 diagram Methods 0.000 description 2
- 230000005611 electricity Effects 0.000 description 1
- 238000006386 neutralization reaction Methods 0.000 description 1
- 238000012856 packing Methods 0.000 description 1
- 230000003068 static effect Effects 0.000 description 1
Landscapes
- Cleaning Or Drying Semiconductors (AREA)
- Cleaning In General (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
Description
第１図は本考案の一実施例のウエハボツクス洗
浄装置の模試図、第２図は従来のウエハボツクス
洗浄装置の模試図である。 Ｂ……ウエハボツクス洗浄装置、６……基台、
６ａ……減圧吸引孔、６ｂ……エツジ、７……真
空吸引装置、８……パツキン、９……パイプ、１
０……静電気中和装置、１１……フイルタ。
浄装置の模試図、第２図は従来のウエハボツクス
洗浄装置の模試図である。 Ｂ……ウエハボツクス洗浄装置、６……基台、
６ａ……減圧吸引孔、６ｂ……エツジ、７……真
空吸引装置、８……パツキン、９……パイプ、１
０……静電気中和装置、１１……フイルタ。
Claims (1)
- 真空吸引装置に接続された減圧吸引孔を有する
基台と、該基台の減圧吸引孔から突出する高圧ガ
ス噴射手段と、上記基台の吸引孔にウエハボツク
スを密閉状態で取り付ける手段とからなることを
特徴とするウエハボツクス洗浄装置。
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP9741988U JPH0220329U (ja) | 1988-07-25 | 1988-07-25 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP9741988U JPH0220329U (ja) | 1988-07-25 | 1988-07-25 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH0220329U true JPH0220329U (ja) | 1990-02-09 |
Family
ID=31322874
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP9741988U Pending JPH0220329U (ja) | 1988-07-25 | 1988-07-25 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0220329U (ja) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH04326545A (ja) * | 1991-04-09 | 1992-11-16 | Internatl Business Mach Corp <Ibm> | 汚染除去装置及び方法 |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS61147535A (ja) * | 1984-12-21 | 1986-07-05 | Toshiba Corp | 回転乾燥方法および装置 |
| JPS62258740A (ja) * | 1986-05-02 | 1987-11-11 | Nec Corp | 半導体プロセスチユ−ブ浄化装置 |
| JPS6329929A (ja) * | 1986-07-23 | 1988-02-08 | Nec Corp | 縮小投影露光装置 |
-
1988
- 1988-07-25 JP JP9741988U patent/JPH0220329U/ja active Pending
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS61147535A (ja) * | 1984-12-21 | 1986-07-05 | Toshiba Corp | 回転乾燥方法および装置 |
| JPS62258740A (ja) * | 1986-05-02 | 1987-11-11 | Nec Corp | 半導体プロセスチユ−ブ浄化装置 |
| JPS6329929A (ja) * | 1986-07-23 | 1988-02-08 | Nec Corp | 縮小投影露光装置 |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH04326545A (ja) * | 1991-04-09 | 1992-11-16 | Internatl Business Mach Corp <Ibm> | 汚染除去装置及び方法 |