JPH02197049A - Ion implantation device - Google Patents
Ion implantation deviceInfo
- Publication number
- JPH02197049A JPH02197049A JP1672689A JP1672689A JPH02197049A JP H02197049 A JPH02197049 A JP H02197049A JP 1672689 A JP1672689 A JP 1672689A JP 1672689 A JP1672689 A JP 1672689A JP H02197049 A JPH02197049 A JP H02197049A
- Authority
- JP
- Japan
- Prior art keywords
- vacuum chamber
- beam line
- ion implantation
- substrate
- preliminary
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000005468 ion implantation Methods 0.000 title claims abstract description 17
- 239000000758 substrate Substances 0.000 claims abstract description 23
- 239000004065 semiconductor Substances 0.000 claims abstract description 7
- 238000010884 ion-beam technique Methods 0.000 claims description 4
- 239000000428 dust Substances 0.000 abstract description 9
- 238000004519 manufacturing process Methods 0.000 abstract description 4
- 235000010627 Phaseolus vulgaris Nutrition 0.000 abstract 1
- 244000046052 Phaseolus vulgaris Species 0.000 abstract 1
- 150000002500 ions Chemical class 0.000 description 17
- 238000004140 cleaning Methods 0.000 description 3
- 230000000694 effects Effects 0.000 description 1
- 239000000284 extract Substances 0.000 description 1
- 239000007943 implant Substances 0.000 description 1
- 238000012423 maintenance Methods 0.000 description 1
Abstract
Description
【発明の詳細な説明】 〔産業上の利用分野〕 本発明はイオン注入装置に関する。[Detailed description of the invention] [Industrial application field] The present invention relates to an ion implantation device.
従来のイオン注入装置は第２図に示すように、イオンを
発生させるイオンソース部１１と、発生したイオンから
半導体基板（以下単に基板という）２に注入するイオン
種を選ぶ分析管１０と、この分析管１０から選んだイオ
ンを加速するビームライン９と、基板２を保持する支持
板３を有し、基板２にイオンを注入するための真空チャ
ンバー４とから主に構成されている。As shown in FIG. 2, a conventional ion implantation apparatus includes an ion source section 11 that generates ions, an analysis tube 10 that selects ion species to be implanted into a semiconductor substrate (hereinafter simply referred to as the substrate) 2 from the generated ions, and It mainly consists of a beam line 9 that accelerates ions selected from an analysis tube 10, and a vacuum chamber 4 that has a support plate 3 that holds a substrate 2 and that implants ions into the substrate 2.
上述した従来のイオン注入装置は、基板２にイオン注入
を行うための真空チャンバー４とビームライン９の間に
基板２の入れ替えの為必要なシャッターを有している。The conventional ion implantation apparatus described above has a shutter necessary for replacing the substrate 2 between the vacuum chamber 4 for implanting ions into the substrate 2 and the beam line 9.
しかしながら、従来のイオン注入装置は、基板２を入れ
かえて真空チャンバーを真空引きした後このシャッター
を開けると、基板側チャンバーとビームライン側の真空
度の違いで気流のみだれが生じる。このためビームライ
ン９の壁面や基板側の真空チャンバー４内の粉塵が舞い
上り基板２に付着するという欠点があった。However, in the conventional ion implantation apparatus, when the shutter is opened after the substrate 2 is replaced and the vacuum chamber is evacuated, airflow is caused by the difference in the degree of vacuum between the chamber on the substrate side and the beam line side. For this reason, there was a drawback that dust on the wall surface of the beam line 9 and in the vacuum chamber 4 on the substrate side would fly up and adhere to the substrate 2.
これを防ぐためには、ビームライン９の壁面と基板側の
真空チャンバー４内の粉塵を取り除くことが必要である
。基板側の真空チャンバー４内の粉塵は、基板２の入れ
替えの際その都度の清掃ができるので問題はない。しか
しビームライン９側の粉塵を除去するためには、ビーム
ライン９全体を大気にしなければならず、その容量も大
きいので、清掃に多大な工数を要し、清掃後の再稼働ま
でにかかる時間も長く必要とする。In order to prevent this, it is necessary to remove dust from the wall surface of the beam line 9 and inside the vacuum chamber 4 on the substrate side. Dust in the vacuum chamber 4 on the substrate side poses no problem since it can be cleaned each time the substrate 2 is replaced. However, in order to remove the dust on the beam line 9 side, the entire beam line 9 must be exposed to the atmosphere, and its capacity is large, so cleaning requires a large amount of man-hours, and it takes a long time to restart the operation after cleaning. I also need it for a long time.
このため、従来のイオン注入装置は、ビームライン９側
の粉塵の除去は十分行うことができないままで作業が行
なわれることが多く、基板に粉塵が付着し半導体装置の
製造歩留り及び信頼性を低下させるという問題点があっ
た。For this reason, in conventional ion implantation equipment, work is often carried out without sufficient removal of dust on the beam line 9 side, and dust adheres to the substrate, reducing the manufacturing yield and reliability of semiconductor devices. There was a problem with letting it work.
本発明のイオン注入装置は、イオンソース部と該イオン
ソース部からのイオン種を分離する分析管と該分析管に
より分離されたイオンビームを引き出すビームラインと
該ビームラインに接続しイオン注入を行うための半導体
基板を保持する真空チャンバーとを有するイオン注入装
置において、前記ビームラインと真空チャンバー間に予
備真空室を設けたものである。The ion implantation apparatus of the present invention includes an ion source section, an analysis tube that separates ion species from the ion source section, a beam line that extracts the ion beam separated by the analysis tube, and a beam line that is connected to the beam line to perform ion implantation. In this ion implantation apparatus, a preliminary vacuum chamber is provided between the beam line and the vacuum chamber.
次に本発明について図面を参照して説明する。 Next, the present invention will be explained with reference to the drawings.
第１図は本発明の一実施例の断面図である。FIG. 1 is a sectional view of an embodiment of the present invention.
第１図において、イオン注入装置は、イオンソース部１
１と、イオンソース部からのイオン種を分離するための
分析管１０と、分離されたイオンビームを引き出すビー
ムライン９と、予備真空室１と、この予備真空室１に接
続し基板２を保持する支持板３を有する真空チャンバー
４とから主に構成されている。そしてイオンソース部１
１．ビームライン９．予備真空室１．真空チャンバー４
には、それぞれ高真空にするためのクライオポンプ８が
接続されている。イオン注入を行う際はモーター５に接
続された支持板３を回転させることにより基板２に均一
にイオンを注入させることができる。そしてこの予備真
空室１はビームの方向に対し奥行１０ｃｍ程度のメンテ
ナンスを行いやすい大きさになっている。In FIG. 1, the ion implantation apparatus includes an ion source section 1
1, an analysis tube 10 for separating ion species from the ion source section, a beam line 9 for drawing out the separated ion beam, a preliminary vacuum chamber 1, and a substrate 2 connected to the preliminary vacuum chamber 1. It mainly consists of a vacuum chamber 4 having a support plate 3. and ion source part 1
1. Beam line 9. Preliminary vacuum chamber 1. vacuum chamber 4
A cryopump 8 is connected to each to create a high vacuum. When performing ion implantation, ions can be uniformly implanted into the substrate 2 by rotating the support plate 3 connected to the motor 5. The preliminary vacuum chamber 1 has a depth of about 10 cm in the direction of the beam, and is sized to facilitate maintenance.
このように構成された本実施例によれば、容量の大きい
ビームライン９を清掃する時にくらべ、わずかな時間と
工数で予備真空室１の清掃を行うことができる。このな
め予備真空室１内を粉塵のない清潔な状態に保つことが
できる。According to this embodiment configured in this way, the preliminary vacuum chamber 1 can be cleaned in a shorter amount of time and man-hours than when cleaning the beam line 9, which has a large capacity. The interior of the preliminary vacuum chamber 1 can be kept clean and free of dust.
実際にイオン注入を行う時は、次のように操作する。ま
ず、予備真空室１と真空チャンバー４とのシャッター６
Ａを開ける。数秒後予備真空室１とビームライン９との
シャッター６Ｂを開けてから基板２にイオン注入を行う
。When actually performing ion implantation, the operations are as follows. First, the shutter 6 between the preliminary vacuum chamber 1 and the vacuum chamber 4
Open A. After a few seconds, the shutters 6B between the preliminary vacuum chamber 1 and the beam line 9 are opened, and ions are implanted into the substrate 2.
以上説明したように本発明は、半導体基板を保持する支
持板を有する真空チャンバーと、イオンビームを引き出
すビームラインとの間に予備真空室を設けることにより
、予備真空室の清掃が簡単に行えるため、半導体基板へ
のビームラインからの粉塵の付着を防止することができ
るなめ、半導体装置の製造歩留り及び信頼性を向上させ
ることができるという効果がある。As explained above, the present invention provides a preliminary vacuum chamber between a vacuum chamber having a support plate that holds a semiconductor substrate and a beam line from which an ion beam is extracted, so that the preliminary vacuum chamber can be easily cleaned. Since dust from the beam line can be prevented from adhering to the semiconductor substrate, the manufacturing yield and reliability of semiconductor devices can be improved.
第１図は本発明の一実施例の断面図、第２図は従来のイ
オン注入装置の一例の断面図である。
１・・・予備真空室、２・・・基板、３・・・支持板、
４・・・真空チャンバー、５・・・モーター、６Ａ、６
Ｂ・・・シャッター、８・・・クライオポンプ、９・・
・ビームライン、１０・・・分析管、１１・・・イオン
ソース部。FIG. 1 is a sectional view of an embodiment of the present invention, and FIG. 2 is a sectional view of an example of a conventional ion implantation apparatus. 1... Preliminary vacuum chamber, 2... Substrate, 3... Support plate,
4...Vacuum chamber, 5...Motor, 6A, 6
B...Shutter, 8...Cryopump, 9...
- Beam line, 10... analysis tube, 11... ion source section.
Claims (1)
離する分析管と該分析管により分離されたイオンビーム
を引き出すビームラインと該ビームラインに接続しイオ
ン注入を行うための半導体基板を保持する真空チャンバ
ーとを有するイオン注入装置において、前記ビームライ
ンと真空チャンバー間に予備真空室を設けたことを特徴
とするイオン注入装置。An ion source section, an analysis tube for separating ion species from the ion source section, a beam line for extracting the ion beam separated by the analysis tube, and a vacuum connected to the beam line for holding a semiconductor substrate for ion implantation. An ion implantation apparatus having a chamber, characterized in that a preliminary vacuum chamber is provided between the beam line and the vacuum chamber.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1672689A JP2861018B2 (en) | 1989-01-25 | 1989-01-25 | Ion implanter |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1672689A JP2861018B2 (en) | 1989-01-25 | 1989-01-25 | Ion implanter |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH02197049A true JPH02197049A (en) | 1990-08-03 |
| JP2861018B2 JP2861018B2 (en) | 1999-02-24 |
Family
ID=11924266
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP1672689A Expired - Fee Related JP2861018B2 (en) | 1989-01-25 | 1989-01-25 | Ion implanter |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2861018B2 (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2002343735A (en) * | 2001-05-14 | 2002-11-29 | Denso Corp | Ion implanting device |
| JP2007311815A (en) * | 2007-07-09 | 2007-11-29 | Ulvac Kuraio Kk | Ion implantation method |
-
1989
- 1989-01-25 JP JP1672689A patent/JP2861018B2/en not_active Expired - Fee Related
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2002343735A (en) * | 2001-05-14 | 2002-11-29 | Denso Corp | Ion implanting device |
| JP4649773B2 (en) * | 2001-05-14 | 2011-03-16 | 株式会社デンソー | Ion implantation machine |
| JP2007311815A (en) * | 2007-07-09 | 2007-11-29 | Ulvac Kuraio Kk | Ion implantation method |
Also Published As
| Publication number | Publication date |
|---|---|
| JP2861018B2 (en) | 1999-02-24 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| LAPS | Cancellation because of no payment of annual fees |