JPH02190457A - Manufacture of isothermal forging die - Google Patents

Manufacture of isothermal forging die

Info

Publication number
JPH02190457A
JPH02190457A JP666889A JP666889A JPH02190457A JP H02190457 A JPH02190457 A JP H02190457A JP 666889 A JP666889 A JP 666889A JP 666889 A JP666889 A JP 666889A JP H02190457 A JPH02190457 A JP H02190457A
Authority
JP
Japan
Prior art keywords
treatment
die
ceramic film
precipitation strengthening
heat treatment
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP666889A
Other languages
Japanese (ja)
Inventor
Kenzo Kato
健三 加藤
Yutaka Wakabayashi
豊 若林
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Seiko Instruments Inc
Original Assignee
Seiko Instruments Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Seiko Instruments Inc filed Critical Seiko Instruments Inc
Priority to JP666889A priority Critical patent/JPH02190457A/en
Publication of JPH02190457A publication Critical patent/JPH02190457A/en
Pending legal-status Critical Current

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  • Forging (AREA)
  • Physical Vapour Deposition (AREA)
  • Chemical Vapour Deposition (AREA)

Abstract

PURPOSE:To manufacture an isothermal forging die without causing deterioration in strength at the time of film formation by forming a shape of die by the use of a precipitation strengthening-type Ni-base alloy and then forming a ceramic film in the course of any of solution treatment, solid solution heat treatment, and precipitation strengthening treatment. CONSTITUTION:After a shape of die is formed by using a precipitation strengthening-type Ni-base alloy as a base material, a ceramic film is formed into the shape of the die in the course of any of solution treatment, solid solution heat treatment, and precipitation strengthening treatment. By carrying out ceramic film formation simultaneously with heat treatment as mentioned above, deterioration in the strength of the die due to heat applied at the time of film formation can be prevented.

Description

【発明の詳細な説明】 〔産業上の利用分野〕 本発明は、析出強化型合金を用いた恒温鍛造用金型にお
ける熱処理に関するものである。
DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to heat treatment in isothermal forging dies using precipitation-strengthened alloys.

〔従来の技術〕[Conventional technology]

恒温鍛造用金型は、鍛造温度によって使い分けが行われ
ており、700〜800℃の場合はNi −Cr −C
o系の1基合金である旧−−^51)(三菱金属の商品
)がよく用いられる0本合金は、840℃加熱後、空冷
によりCrt Co+ Moの固溶体強化が起こり、更
に760℃加熱後空冷により、AZl Tiの金属間化
合物を析出し、高温強度を得る析出強化型合金である。
Isothermal forging dies are used depending on the forging temperature, and when the temperature is 700 to 800°C, Ni-Cr-C is used.
O-based single-base alloy, former -^51) (product of Mitsubishi Metals), is often used. After heating to 840°C, solid solution strengthening of Crt Co + Mo occurs by air cooling, and after further heating to 760°C, It is a precipitation-strengthened alloy that precipitates an intermetallic compound of AZl Ti by air cooling and obtains high-temperature strength.

したがって、本合金を所定の金型形状に仕上げた後、前
記の固溶体強化処理及び析出強化処理を行い、研磨加工
の後、離型及び潤滑を目的としたセラミックス皮膜を形
成させていた。セラミックス皮膜の形成手段としては、
スパッタ法、イオンブレーティング法等である。
Therefore, after finishing the present alloy into a predetermined mold shape, the aforementioned solid solution strengthening treatment and precipitation strengthening treatment were performed, and after polishing, a ceramic film was formed for the purpose of mold release and lubrication. As a means of forming a ceramic film,
These include sputtering method, ion blating method, etc.

〔発明が解決しようとする課題〕[Problem to be solved by the invention]

しかし従来の方法では、セラミックス皮膜の形成温度を
、800℃以上で行うと、析出強化処理によって析出さ
せた金属間化合物がIn大化し強度劣化を起こすため、
セラミックス皮膜の形成温度は760℃以下に抑えなけ
ればならず、手段としてはスパッタ法または、イオンブ
レーティング法に限られている。
However, in the conventional method, if the ceramic film is formed at a temperature of 800°C or higher, the intermetallic compound precipitated by the precipitation strengthening treatment becomes larger in In and causes strength deterioration.
The temperature at which the ceramic film is formed must be kept below 760° C., and the methods used are limited to sputtering or ion blasting.

(i!g題を解決するための手段) 上記課題を解決するために本発明は、Iu4Aから金型
形状を形成した後、溶体化処理、固溶体化処理、及び析
出強化処理の熱処理工程のいずれかの熱処理工程中で、
セラミックス皮111Aを形成するものである。
(Means for solving the i!g problem) In order to solve the above problems, the present invention provides that after forming a mold shape from Iu4A, any of the heat treatment steps of solution treatment, solid solution treatment, and precipitation strengthening treatment is performed. During the heat treatment process,
This forms a ceramic skin 111A.

〔作用〕[Effect]

このように本発明方法によれば、セラミックス皮膜の形
成温度を、溶体化処理温度、あるいは固溶体化処理温度
に合わせ、これらの熱処理と同時にセラミックス皮膜を
形成することができる。
As described above, according to the method of the present invention, the ceramic film formation temperature can be matched to the solution treatment temperature or the solid solution treatment temperature, and the ceramic film can be formed simultaneously with these heat treatments.

すなわち、セラミックス皮膜の形成温度を熱処理温度に
合わせることから、一連の熱処理の効果を何ら1員なう
ことなく、又、熱処理と同時に皮膜形成を行なうので、
工程の省略化が達成されるものである。
In other words, since the temperature at which the ceramic film is formed is matched to the heat treatment temperature, the effects of the series of heat treatments are not affected in any way, and because the film is formed at the same time as the heat treatment,
The process can be simplified.

〔実施例〕〔Example〕

表−Iに、本発明によるTiCコーティングをしたHA
 −WASP材の800℃における0、2%耐力を示す
Table I shows HA coated with TiC according to the present invention.
- Shows the 0.2% yield strength of WASP material at 800°C.

表−1 800℃における0、2%耐力 試料にはφtoxtto龍のH^−WASr’材を用い
た。
Table 1: 0 and 2% proof stress at 800°C φtoxtto Ryu's H^-WASr' material was used as the sample.

試料へは、溶体化処理とTiCコーティング処理を同時
に行ったもので、母材をTicのCVD装置内で104
0℃4時間加熱後、TiCコーティングを行い、更に、
真空炉にて固溶体強化処理及び析出強化処理を施したも
のである。試料Bは、固溶体強化処理とTiCコーティ
ング処理を同時に行ったもので、母材を真空炉にて溶体
化処理後、プラズマCVD装置内で840℃、 16時
間加熱後、TiCコーティングを行い、更に真空炉にて
析出゛強化処理を施したものである。試料Cは、試料A
、 Bの比較サンプルとしてTiCコーティングは行わ
ずに、i^−WASPの41準熱処理(溶体化処理→固
溶体強化処理時析出強化処理)を施したものである。
The sample was subjected to solution treatment and TiC coating treatment at the same time, and the base material was 104%
After heating at 0°C for 4 hours, TiC coating was applied, and further,
It has been subjected to solid solution strengthening treatment and precipitation strengthening treatment in a vacuum furnace. Sample B was subjected to solid solution strengthening treatment and TiC coating treatment at the same time; the base material was solution treated in a vacuum furnace, heated in a plasma CVD device at 840°C for 16 hours, TiC coated, and further vacuum treated. It has been subjected to precipitation strengthening treatment in a furnace. Sample C is Sample A
, B was subjected to i^-WASP 41 quasi-heat treatment (solution treatment → precipitation strengthening treatment during solid solution strengthening treatment) without TiC coating.

表−1より、試料A、B共に試料Cと同等の強度を有し
てお、す、熱処理を兼ねたセラミックス皮膜の成膜処理
が可能である事が確認できた。
From Table 1, it was confirmed that both samples A and B had the same strength as sample C, and that it was possible to form a ceramic film that also served as heat treatment.

〔発明の効果〕〔Effect of the invention〕

本発明は、以上説明したように金型材料の熱処理と、潤
滑及び離型を目的としたセラミックス皮膜め成膜を同時
に行うため、成膜時に加わる熱による金型の強度低下は
なく成膜処理温度による成n9方式の11−1約がな4
なり、プラズマCVD法、熱CVD等種々の成膜方式を
適用できるようになった。
As explained above, the present invention simultaneously performs the heat treatment of the mold material and the formation of a ceramic film for the purpose of lubrication and mold release, so that the strength of the mold does not deteriorate due to the heat applied during film formation, and the film formation process 11-1 Approximately 4 of the n9 method of formation by temperature
Therefore, various film forming methods such as plasma CVD and thermal CVD can now be applied.

以上 出願人 セイコー電子工業株式会社 代理人 弁理士 林  敬 之 助that's all Applicant: Seiko Electronics Industries Co., Ltd. Agent: Patent Attorney Takayoshi Hayashi

Claims (1)

【特許請求の範囲】[Claims] 母材に析出強化型Ni基合金を用い、その表面にセラミ
ックス皮膜を有する恒温鍛造用金型の製造方法において
、母材から金型形状を形成した後、溶体化処理、固溶体
化処理、及び析出強化処理の熱処理工程のいずれかの熱
処理工程中で、前記セラミックス皮膜を形成することを
特徴とする恒温鍛造用金型の製造方法。
In a method for manufacturing a mold for isothermal forging that uses a precipitation-strengthened Ni-based alloy as the base material and has a ceramic film on its surface, the mold shape is formed from the base material, and then solution treatment, solid solution treatment, and precipitation are performed. A method for manufacturing a mold for isothermal forging, characterized in that the ceramic film is formed during any of the heat treatment steps of the strengthening treatment.
JP666889A 1989-01-13 1989-01-13 Manufacture of isothermal forging die Pending JPH02190457A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP666889A JPH02190457A (en) 1989-01-13 1989-01-13 Manufacture of isothermal forging die

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP666889A JPH02190457A (en) 1989-01-13 1989-01-13 Manufacture of isothermal forging die

Publications (1)

Publication Number Publication Date
JPH02190457A true JPH02190457A (en) 1990-07-26

Family

ID=11644753

Family Applications (1)

Application Number Title Priority Date Filing Date
JP666889A Pending JPH02190457A (en) 1989-01-13 1989-01-13 Manufacture of isothermal forging die

Country Status (1)

Country Link
JP (1) JPH02190457A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0498340U (en) * 1991-01-29 1992-08-25

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0498340U (en) * 1991-01-29 1992-08-25

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