JPH02189748A - Protective film - Google Patents
Protective filmInfo
- Publication number
- JPH02189748A JPH02189748A JP1008261A JP826189A JPH02189748A JP H02189748 A JPH02189748 A JP H02189748A JP 1008261 A JP1008261 A JP 1008261A JP 826189 A JP826189 A JP 826189A JP H02189748 A JPH02189748 A JP H02189748A
- Authority
- JP
- Japan
- Prior art keywords
- film
- protective film
- protective
- magneto
- optical recording
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 230000001681 protective effect Effects 0.000 title claims abstract description 17
- 229910052782 aluminium Inorganic materials 0.000 claims abstract description 6
- 239000002131 composite material Substances 0.000 claims abstract description 6
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims abstract description 5
- 239000010408 film Substances 0.000 claims description 58
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 3
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 3
- 229910010271 silicon carbide Inorganic materials 0.000 claims description 2
- 239000010409 thin film Substances 0.000 claims description 2
- 239000000758 substrate Substances 0.000 abstract description 6
- 229910052710 silicon Inorganic materials 0.000 abstract description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract description 3
- 239000010703 silicon Substances 0.000 abstract description 3
- 238000005546 reactive sputtering Methods 0.000 abstract description 2
- 150000004767 nitrides Chemical class 0.000 abstract 2
- 229910000789 Aluminium-silicon alloy Inorganic materials 0.000 abstract 1
- 230000003287 optical effect Effects 0.000 description 9
- 230000007547 defect Effects 0.000 description 7
- 238000010586 diagram Methods 0.000 description 6
- 238000005530 etching Methods 0.000 description 4
- 238000009413 insulation Methods 0.000 description 4
- 230000007797 corrosion Effects 0.000 description 3
- 238000005260 corrosion Methods 0.000 description 3
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000011156 evaluation Methods 0.000 description 2
- 238000002474 experimental method Methods 0.000 description 2
- 239000010410 layer Substances 0.000 description 2
- 239000011241 protective layer Substances 0.000 description 2
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 102220043690 rs1049562 Human genes 0.000 description 1
Abstract
Description
【発明の詳細な説明】
［産業上の利用分野］
本発明は、集積回路用、磁気記録媒体用、光磁気記録媒
体用、光記録用、薄膜ヘッド用等の保護膜組成に関する
。DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to a protective film composition for integrated circuits, magnetic recording media, magneto-optical recording media, optical recording, thin film heads, and the like.
［従来の技術］
光磁気記録媒体の記録層を保護する保護膜として、従来
はＳｉＮ、ＡｔＮ、ＳｉＯ，ＺｎＳ等の誘電体膜が知ら
れていたが、どの材料も、耐クラック性、耐食性、を満
足するものはなく、本発明者は鋭意研究の結果、特開昭
６２−３１０５２に示すごとく、窒化アルミニウムと窒
化シリコンの複合誘電体（以下Ａｔ５ｉＮと略す）膜が
、耐クラック性、耐食性両方を兼ねそなえる非常に良い
保護膜であることを開示した。[Prior Art] Dielectric films such as SiN, AtN, SiO, and ZnS have conventionally been known as protective films for protecting the recording layer of magneto-optical recording media, but all materials have good crack resistance, corrosion resistance, As a result of intensive research, the present inventor found that a composite dielectric film of aluminum nitride and silicon nitride (hereinafter abbreviated as At5iN) has both crack resistance and corrosion resistance, as shown in JP-A No. 62-31052. It was disclosed that it is a very good protective film that also has the following properties.
［発明が解決しようとする課Ｎ］
本発明者の目的は、さらなる研究を債み重ね、Ａｔ５ｉ
Ｎを基本に改良することにより、より一層の保護効果の
すぐれた種々の用途に適応できる保護膜を提供すること
にある。[Problem N that the invention attempts to solve] The purpose of the inventor is to continue further research and solve At5i
The object of the present invention is to provide a protective film that has an even better protective effect and can be applied to various uses by improving the basic content of N.
［課題を解決するための手段］
透明基板の片面に、保護層と光記録層を具０１「する光
記録媒体において、保護層がアルミニウムとシリコンの
窒化物と炭化物の複合であることを特徴とする特
［実施例］
実験に用いた成膜装置の概略図を第１図に示す１がター
ゲットであり、Ａｔと８１の焼結ターゲットを用いてい
る（ Ａ ｔ３ｏＳ ｉ７＠ ａｔ％）。２は基板で８
１ウエハーを用いた。６のチャンバーを１０″″”ｒｏ
ｒｒにまで真空引きしたのち、Ａ ｒ ｔＮ、、ＯＨ４
を導入しＲＩＰ電源により３のＡｔＳｉターゲットに電
圧を印加し反応性スパッタにより３１基板上にアルミニ
ウムとシリコンの☆化物と炭化物の複合膜（以後路して
Ａｔ５ｉＮＯ：Ｈ膜と称する）を成膜し種々の評価をお
こない、実際の種々のデバイスに応用しその性能を比較
した。[Means for Solving the Problem] An optical recording medium comprising a protective layer and an optical recording layer on one side of a transparent substrate, characterized in that the protective layer is a composite of aluminum and silicon nitride and carbide. [Example] A schematic diagram of the film forming apparatus used in the experiment is shown in FIG. 8 on the board
1 wafer was used. 6 chamber to 10''''ro
After vacuuming to rr, A r tN,,OH4
A voltage was applied to the AtSi target 3 using the RIP power supply, and a composite film of aluminum and silicon ☆ oxide and carbide (hereinafter referred to as the At5iNO:H film) was formed on the substrate 31 by reactive sputtering. We conducted various evaluations, applied it to various actual devices, and compared its performance.
Ｐｏｗｅｒ １１０Ｗ 固定とし、Ａｒ圧、Ｎ２圧。Power is fixed at 110W, Ar pressure, N2 pressure.
ＯＨ４圧を種々に変えた膜を成膜し、各種評価をおこな
った。第２図は種々の膜のエツチングレートをみたも・
のである。ＰＮ２一定とし、Ａｒ圧とＯＨ，圧を種々に
変えた膜を作成し、ＨＦ：Ｈ２０＝１ニアの緩衝フッ酸
（ＢＨＦ’）によるエツチングレートを測定した。液温
は２５℃一定とした。この図かられかる様にＯＨ４が混
入したＡｔ、。８１７゜Ｎ膜は、ＯＨ４が無い膜よりも
エツチングレートが遅いことがわかる。つまり膜質が良
いことがわかる。Films were formed with various OH4 pressures and various evaluations were performed. Figure 2 shows the etching rates of various films.
It is. Films were prepared with PN2 constant and Ar pressure, OH, and pressure varied, and the etching rate using buffered hydrofluoric acid (BHF') with HF:H20=1 nia was measured. The liquid temperature was kept constant at 25°C. As you can see from this figure, At mixed with OH4. It can be seen that the etching rate of the 817°N film is slower than that of the film without OH4. In other words, it can be seen that the film quality is good.
第５図は種々の膜の応力をみたものである。FIG. 5 shows the stress of various films.
この応力はＳ１ウェハーＱ反り量から計算したものであ
る。この図かられかる様１にＯＨ，が混入したｋｔ、。This stress was calculated from the S1 wafer Q warp amount. As can be seen from this figure, kt is mixed with OH.
Ｓｉ、ｏＮ膜は、ＯＨ４が無い膜よりも応力が小さいこ
とがわかる。つまり歪が小さいことがわかる。It can be seen that the Si, oN film has lower stress than the film without OH4. In other words, it can be seen that the distortion is small.
この様にＡｔ５ｉＮＯ：Ｈ膜は保護膜、として、良い性
質を兼ねそなえており、実際のデバイスに種々応用して
確認した。As described above, the At5iNO:H film has good properties as a protective film, and this was confirmed by applying it to various actual devices.
まず光磁気記録媒体用に応用してみた。第４図が光磁気
記録媒体の断面図である。４１が溝付きｐｃ基板、４２
がＡｌ５ｉＮＯ：Ｈ膜、４３がＴｂ？ｅＧＯ膜、４４が
Ａｔ５ｉＮｏ：Ｈ膜である。膜厚は全て１０００Ｘであ
る。この媒体を８０℃９０％ＲＨの恒温恒湿槽中に入れ
、欠陥率の増加をみたものが第５図である。Ａｔ５ｉＮ
。First, we applied it to magneto-optical recording media. FIG. 4 is a sectional view of the magneto-optical recording medium. 41 is a grooved PC board, 42
is Al5iNO:H film, 43 is Tb? The eGO film 44 is an At5iNo:H film. All film thicknesses are 1000X. This medium was placed in a constant temperature and humidity chamber at 80° C. and 90% RH, and the increase in defect rate was observed in FIG. 5. At5iN
.
：Ｈ膜の成膜条件はＡｒ圧４ｍＴｏｒｒ、ＰＮ２１
ｍＴｏｒｒ 、ＰＯＨ４０，５ｍＴｏｒｒ 、Ｐｏ
ｗｅｒＩＫＷでおこなった。５１がＡｔ５ｉＮＯ：Ｈ膜
の光磁気媒体で、５２が上の条件のＯＨ４を入れなかっ
たＡｔ５ｉＮ光磁気媒光磁気心。この図より本発明によ
るＡｔ５ｉＮＯ：Ｈ膜の光磁気媒体は欠陥数が増加せず
、一方比較のためのＡｔ５ｉＮ膜光磁気媒体は１３００
時間から欠陥数の増加が激しい、これは同時間より膜に
クラックが生じ、そこから孔食が始まったためである。:H film formation conditions are Ar pressure 4 mTorr, PN21
mTorr, POH40,5mTorr, Po
It was done at werIKW. 51 is a magneto-optical medium of At5iNO:H film, and 52 is an At5iN magneto-optical medium without OH4 under the above conditions. This figure shows that the number of defects does not increase in the magneto-optical medium made of At5iNO:H film according to the present invention, while the number of defects in the magneto-optical medium made of At5iN film for comparison is 1300.
The number of defects increases sharply over time. This is because cracks appear in the film from the same time, and pitting corrosion begins from there.
次に光記録媒体（相変化型）に応用してみた。Next, we applied it to optical recording media (phase change type).
媒体の構造及び成膜は、第４図に示すものと同様である
が、記録膜が工ｎ５ｂｓ６膜としたものを用いた。比較
方法、条件は光磁気媒体と同じである第６図は８０℃９
０％ＲＨ中の欠陥率の増加であり、６１がＡｔ５ｉＮＯ
：Ｈ膜の光記録媒体で６２がＯＨ４を入れなかったＡｔ
５ｉＮ膜の光記録媒体である。この図よりやはり本発明
によるＡＡＳｉＮＯ：Ｈ膜の保護特性が良いことがわか
る。The structure and film formation of the medium were the same as those shown in FIG. 4, except that the recording film was a n5bs6 film. The comparison method and conditions are the same as those for magneto-optical media. Figure 6 shows the temperature at 80℃9.
Increase in defect rate during 0% RH, 61 is At5iNO
:H film optical recording medium with 62 containing no OH4
This is an optical recording medium with a 5iN film. This figure also shows that the AASiNO:H film according to the present invention has good protective properties.
さらに集積回路への応用をみるため、第７図に示す様な
膜構造をつ（す、電極間の絶縁度をみた第７図の７１．
７５がＡｔ電極で、７２がＡＡＳｉＮＣ：Ｈ膜である。Furthermore, in order to see the application to integrated circuits, we constructed a film structure as shown in Figure 7.
75 is an At electrode, and 72 is an AASiNC:H film.
このサンプルをやはり８０℃９０％ＲＨに長時間入れ、
電圧を印加し絶縁度をみた。第８図がそれである。縦軸
は初期の抵抗値で割った規格値である。８１がＡｔ５ｉ
ＮＣ：Ｈ膜のサンプルで、８２がＡｔＳ ｉ Ｎ膜のサ
ンプルである。本発明のＡｔ５ｉＮＯ：Ｈｇサンプルは
２０００Ｈ後も絶縁度は変化ないが、Ａｔ５ｉＮ膜サン
プルは１０００Ｈを過ぎたころから絶縁度が悪（なり始
めている。This sample was also placed at 80℃90%RH for a long time,
A voltage was applied and the degree of insulation was checked. Figure 8 shows this. The vertical axis is the standard value divided by the initial resistance value. 81 is At5i
This is a sample of NC:H film, and 82 is a sample of AtS i N film. The insulation degree of the At5iNO:Hg sample of the present invention does not change even after 2000 hours, but the insulation degree of the At5iN film sample starts to deteriorate after 1000 hours.
［発明の効果コ
以上述べた如く、本発明によるＡｔ５ｉＮＯ：Ｈ保護膜
は各種デパ、イスに対し良い保護特性を示し、長期間に
わたり各種デバイスの信頼性を高めることができる。[Effects of the Invention] As described above, the At5iNO:H protective film according to the present invention exhibits good protective properties for various department stores and chairs, and can improve the reliability of various devices over a long period of time.
尚、本実施例はＡｔ、。Ｓｉ、。ターゲットを用いたが
、これ以外にＡｔＩｏＳ ｉ、ｏ、Ａｔ、（、Ｓ ｉ、
。Incidentally, in this example, At. Si,. target was used, but in addition to this, AtIoS i, o, At, (,S i,
.
ｓ Ａ ｔｇｏＳ ｉ ｓｏ ｐ Ａ ｔｇｏＳ ｉ
Ｉａ でも同様の効果が生じることを確認した。ざら
にＯＶＤ等の成膜装置を用いても良いことは言うまでも
ない。s A tgoS i so p A tgoS i
It was confirmed that a similar effect was produced with Ia. It goes without saying that a film forming apparatus such as OVD may also be used.
第１図は実験に用いた成膜装置の概略図。
第２図は種々の膜のエツチングレート図。
第５図は種々の膜の応力図。
第４図は光磁気記録媒体の断面図。
第５図は光磁気記録媒体の欠陥率増加図。
第６図は光記録媒体の欠陥率増加図。
第７図は集積回路用の膜構造図。
第８図は絶縁度の増加図。
１・・・・・・・・・ターゲット
２・・・・・・・・・基 板
３・・・・・・・・・チャンバー
４１・・・・・・溝付きＰＯ基板
４２・・・・・・ＡｊＳｉＮＯ：Ｈ膜
４５−−−−−− Ｔ ｂ Ｆ ｅ Ｏｏ膜４４・・・
・・・Ａ４５ｉＮＯ：Ｈ膜
５１・・・・・・ＡＪａＳｉＮＯ：Ｈ膜の光磁気媒体２
・・・・・・Ａｔ５ｉＮ膜の光磁気媒体１・・・・・・
Ａｔ５ｉＮＯ：Ｈ膜の光記録媒体２・・・・・・Ａｔ５
ｉＮ膜の光記録媒体１・・・・・・Ａｔ電極
２・・・・・・ Ａ ｔＳｉ
６・・・・・・Ａｔ電極
１・・・・・・ＡｔＳｉ
２・・・・・・ｋｔＳ ｉ
ＮＯ：Ｈ膜のサンプル
Ｎ膜のサンプル
ＮＯ：Ｈ膜
以上FIG. 1 is a schematic diagram of the film forming apparatus used in the experiment. Figure 2 is an etching rate diagram of various films. FIG. 5 is a stress diagram of various films. FIG. 4 is a cross-sectional view of the magneto-optical recording medium. FIG. 5 is a diagram showing the increase in defect rate of magneto-optical recording media. FIG. 6 is an increase in defect rate of optical recording media. FIG. 7 is a film structure diagram for integrated circuits. Figure 8 shows an increase in insulation degree. 1...Target 2...Substrate 3...Chamber 41...Grooved PO substrate 42... ...AjSiNO:H film 45---- T b Fe Oo film 44...
...A45iNO:H film 51...AJaSiNO:H film magneto-optical medium 2
...At5iN film magneto-optical medium 1...
At5iNO:H film optical recording medium 2...At5
iN film optical recording medium 1...At electrode 2...A tSi 6...At electrode 1...AtSi 2...ktS i NO:H film sample N film sample NO:H film or higher
Claims (1)
ルミニウムとシリコンの窒化物と炭化物の複合であるこ
とを特徴とする保護膜。A protective film for protecting a functional thin film, characterized in that the protective film is a composite of aluminum and silicon nitride and carbide.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1008261A JPH02189748A (en) | 1989-01-17 | 1989-01-17 | Protective film |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1008261A JPH02189748A (en) | 1989-01-17 | 1989-01-17 | Protective film |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH02189748A true JPH02189748A (en) | 1990-07-25 |
Family
ID=11688206
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP1008261A Pending JPH02189748A (en) | 1989-01-17 | 1989-01-17 | Protective film |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH02189748A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE102004014466B4 (en) * | 2003-03-25 | 2011-05-05 | Kabushiki Kaisha Kobe Seiko Sho (Kobe Steel, Ltd.), Kobe-shi | Use of a hard material layer as coating of a sliding component for a hydraulic component in an aqueous environment |
-
1989
- 1989-01-17 JP JP1008261A patent/JPH02189748A/en active Pending
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE102004014466B4 (en) * | 2003-03-25 | 2011-05-05 | Kabushiki Kaisha Kobe Seiko Sho (Kobe Steel, Ltd.), Kobe-shi | Use of a hard material layer as coating of a sliding component for a hydraulic component in an aqueous environment |
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