JPH02188936A - Semiconductor device and manufacture thereof - Google Patents

Abstract

PURPOSE:To form a bump on a wiring pattern corresponding to a metal pad without a high-accuracy alignment technique by a method wherein, after a conductive film where conductive particles have been dispersed in a low-temperature melting resin has been arranged on a substrate, the substrate and the wiring pattern are heated and the conductive film is transcribed selectively on the wiring pattern. CONSTITUTION:A semiconductor device is manufactured via a process in which a wiring pattern 2 formed on a substrate 1 and a connection terminal 10 of a semiconductor chip 9 are made conductive via a bump 8; during this process, a conductive film 3 in which conductive particles 6 have been dispersed to a low-temperature melting resin 5 is arranged on the substrate 1 on which the wiring pattern 2 has been formed; after that, the substrate 1 and the wiring pattern 2 are heated; the conductive film 3 is transcribed selectively on the wiring pattern 2; and a bump 3 is formed. For example, a conductive film 3 such as said film is placed on a substrate 1 provided with a wiring pattern 2; a heating operation 7 is executed from the surface or the rear surface; a temperature difference is caused between the substrate 1 and the wiring pattern 2 by a difference in specific heat or the like between the substrate 1 and the wiring pattern 2; and only a conductive wiring part on the wiring pattern 2 is melted and a bump 8 is formed.

Description

Detailed Description of the Invention [Industrial Application Field 1] The present invention relates to a semiconductor device in which protruding electrodes are formed on a wiring pattern in bonding a connecting terminal of a semiconductor chip to a wiring pattern formed on a substrate, and a method for manufacturing the same. Regarding.

[Prior Art] Conventionally, a semiconductor device has a process of creating electrical continuity between a wiring pattern formed on a substrate and a connecting terminal of a semiconductor chip through a protruding electrode. By soldering in a phase-down manner to obtain a connection, or by printing a hardening resin containing conductive particles onto the wiring pattern corresponding to the metal pad, aligning the wiring pattern and the metal pad, and applying pressure. There is a method of physically fixing the IC chip by curing a curable resin interposed between the substrate and the IC chip after establishing continuity through conductive particles.

Problem 1 to be Solved by the Invention However, the method using solder bumps has the disadvantage that the process of forming the bumps is complicated, requiring many man-hours and increasing costs. In addition, the method of printing curable resin containing conductive particles requires highly accurate positioning technology, making it difficult to increase yield and making it difficult to
There is a problem in that when the wiring pitch becomes small, it becomes difficult to insulate the five wiring patterns.

The present invention solves these problems by applying a curable resin containing conductive particles onto wiring patterns corresponding to metal pads at low cost and damaging the insulation between wiring patterns without using highly accurate positioning technology. It is an object of the present invention to provide a semiconductor device including a process of arranging it without any problems.

(Means for Solving the Problems 1) A semiconductor device according to the present invention is a semiconductor device having a step of providing electrical continuity between a wiring pattern formed on a substrate and a connection terminal of a semiconductor chip via a protruding electrode. After placing a conductive film with dispersed particles on a substrate containing a wiring pattern, heat is applied to the substrate and the wiring pattern to selectively transfer the conductive film onto the wiring pattern to form protruding electrodes. A semiconductor device characterized by having a process.

For 1 work] The operation of the present invention will be explained in detail based on the drawings.

FIG. 1 is a top view of a substrate according to the present invention, and a wiring pattern 2 is formed on a substrate (2) made of glass and epoxy to match a semiconductor chip. At this time, the wiring pattern is preferably formed of a material with low specific heat, such as metal.

FIG. 2 is a diagram showing the present invention in the order of steps. First (a)
As shown in the figure, a conductive film 3 made by dispersing conductive particles 6 in a low-temperature melting resin 5 and coating it on a protective film 4 is placed on a substrate 1 with a wiring pattern 2, and heating is performed from the upper or lower surface. Due to the difference in specific heat or reflectance.

A temperature difference occurs between the board and the wiring pattern. By optimizing the heating time, only the conductive film on the wiring pattern is melted to form the protruding electrodes 8 as shown in FIG. 2(b).

Next, as shown in Figure (c), the metal pad IO on the semiconductor chip 9
A connection is made between the metal pad and the wiring pattern by aligning the pad and the protruding electrode and applying pressure.

[Example 11 In Fig. 1, a glass plate with a thickness of 1.1 mm was used as the substrate 1, and ITO was patterned as the wiring pattern 2 with a line width of 100 μm and a pitch of 200 μm.
Electroless plating of nickel was applied to the top only to a thickness of 2000 mm.

Next, resin balls with an average particle size of 7 μm (manufactured by Tanezu Fine Chemicals KK, trade name: Micro Pearl) were plated with nickel to a thickness of 1000 to conductive, in carbana wax with a melting point of 80°C used as the low-temperature melting resin 5. 5 as particle 6
A conductive film 3 prepared by dispersing 0% wt and coating it on a protective film 4 was placed on a substrate.

Next, when a far-infrared heater with a wavelength of 4 μm and an output of 100 W was irradiated from the bottom of the glass plate at a distance of 10 cm for 8 seconds, the low-temperature melting resin was melted only on the conductive film on the wiring bag, and the protruding electrodes 8 were formed.

Next, apply ultraviolet curing resin onto the substrate corresponding to the semiconductor chip 9, align the metal pad 0 and the protruding electrode,
By applying a pressure of 10 kg/cTI+2 from above the semiconductor chip, it was possible to establish electrical continuity between the metal pad and the wiring pattern via the conductive particles.

Furthermore, by irradiating ultraviolet rays of 3000 mJ from the bottom of the glass plate, the ultraviolet curing resin was cured and the semiconductor chip was fixed.

By mounting the semiconductor chip as described above, it was possible to form protruding electrodes without the need for highly accurate alignment techniques, and to maintain insulation between wiring patterns.

[Example 21 In FIG. 1, an epoxy substrate with a thickness of 1.5 mm is used as substrate 1.
Wiring pattern 2 was obtained by patterning a copper foil with a thickness of 35 um.

Further, a conductive film 3 is obtained by dispersing 60% of the conductive particles in the low-temperature melting resin using paraffin wax with a melting point of 60° C. as the low-temperature melting resin 5 and using nickel particles with a particle size of 15 μm as the conductive particles 6. And so.

A conductive film was placed on the wiring pattern, and a metal block sized to the semiconductor chip was heated to 70°C and pressed against the conductive film for 7 seconds at a load of 5 kg/cm'. Due to the difference, only the copper pattern was heated to over 60°C, and the low-temperature melting resin only in the wiring pattern was melted, making it possible to form a protruding electrode.

Next, by aligning the protruding electrodes and the metal pads and applying a load of 2 kgf from above the semiconductor chip using a spring, it was possible to establish conduction between the metal pads and the wiring pattern via the protruding electrodes, and to fix the semiconductor chip.

By mounting the semiconductor chip as described above, the same effects as in Example 1 could be obtained.

[Effects of the Invention] As described above, according to the present invention, it was possible to perform precise alignment (protruding electrodes could be formed on wiring patterns in correspondence with metal pads).

In addition, since it was possible to selectively melt only the conductive film on the wiring pattern, it was possible to form protruding electrodes even on minute wiring patterns without impairing insulation properties.

[Brief explanation of the drawing]

FIG. 1 is a top view of the substrate and wiring pattern in the present invention. FIGS. 2(a), (b), and (c) are diagrams showing the manufacturing process of the present invention. Board wiring pattern Conductive film Protective film Low-temperature melting resin Conductive particles Heating protruding electrode Metal pad 10... Semiconductor chip and above Applicant Seiko Epson Corporation Representative Patent attorney Masaharu Kamiyanagi (and 1 other person) Figure 1 Figure 2 ( a')

Claims (2)

[Claims] (1) In a method for manufacturing a semiconductor device that includes a step of creating electrical continuity between a wiring pattern formed on a substrate and a connecting terminal of a semiconductor chip through a protruding electrode, a conductive film made of conductive particles dispersed in a low-temperature melting resin is used to form a wiring pattern. A semiconductor device comprising the step of selectively transferring the conductive film onto the wiring pattern by heating the substrate and the wiring pattern after placing the conductive film on the substrate on which the wiring pattern is formed, thereby forming a protruding electrode. Production method. (2) A semiconductor device, characterized in that a conductive film in which conductive particles are dispersed is disposed on a wiring pattern by the method for manufacturing a semiconductor device according to claim 1.