JPH02188918A - Processing of compound semiconductor - Google Patents
Processing of compound semiconductorInfo
- Publication number
- JPH02188918A JPH02188918A JP593589A JP593589A JPH02188918A JP H02188918 A JPH02188918 A JP H02188918A JP 593589 A JP593589 A JP 593589A JP 593589 A JP593589 A JP 593589A JP H02188918 A JPH02188918 A JP H02188918A
- Authority
- JP
- Japan
- Prior art keywords
- compound semiconductor
- irradiated
- processing
- electron
- electron beam
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 43
- 150000001875 compounds Chemical class 0.000 title claims abstract description 33
- 150000002430 hydrocarbons Chemical class 0.000 claims abstract description 12
- 229930195733 hydrocarbon Natural products 0.000 claims abstract description 9
- 238000000034 method Methods 0.000 claims abstract description 7
- 239000004215 Carbon black (E152) Substances 0.000 claims abstract description 6
- 238000003672 processing method Methods 0.000 claims description 7
- 230000001678 irradiating effect Effects 0.000 claims description 5
- 238000010894 electron beam technology Methods 0.000 abstract description 16
- 229910001218 Gallium arsenide Inorganic materials 0.000 abstract description 6
- 239000010410 layer Substances 0.000 description 12
- 150000002500 ions Chemical class 0.000 description 11
- 239000007789 gas Substances 0.000 description 8
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 6
- 238000005253 cladding Methods 0.000 description 6
- 238000005424 photoluminescence Methods 0.000 description 5
- ATUOYWHBWRKTHZ-UHFFFAOYSA-N Propane Chemical compound CCC ATUOYWHBWRKTHZ-UHFFFAOYSA-N 0.000 description 4
- 238000006243 chemical reaction Methods 0.000 description 4
- VNWKTOKETHGBQD-UHFFFAOYSA-N methane Chemical compound C VNWKTOKETHGBQD-UHFFFAOYSA-N 0.000 description 4
- 239000000126 substance Substances 0.000 description 4
- OKKJLVBELUTLKV-UHFFFAOYSA-N Methanol Chemical compound OC OKKJLVBELUTLKV-UHFFFAOYSA-N 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 238000010884 ion-beam technique Methods 0.000 description 3
- -1 4H1o) Natural products 0.000 description 2
- OTMSDBZUPAUEDD-UHFFFAOYSA-N Ethane Chemical compound CC OTMSDBZUPAUEDD-UHFFFAOYSA-N 0.000 description 2
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 2
- 239000000470 constituent Substances 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 239000000758 substrate Substances 0.000 description 2
- VGGSQFUCUMXWEO-UHFFFAOYSA-N Ethene Chemical compound C=C VGGSQFUCUMXWEO-UHFFFAOYSA-N 0.000 description 1
- 239000005977 Ethylene Substances 0.000 description 1
- 230000001133 acceleration Effects 0.000 description 1
- 239000013543 active substance Substances 0.000 description 1
- 150000001298 alcohols Chemical class 0.000 description 1
- 239000001273 butane Substances 0.000 description 1
- 239000003518 caustics Substances 0.000 description 1
- 239000000356 contaminant Substances 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- PXBRQCKWGAHEHS-UHFFFAOYSA-N dichlorodifluoromethane Chemical compound FC(F)(Cl)Cl PXBRQCKWGAHEHS-UHFFFAOYSA-N 0.000 description 1
- 235000019404 dichlorodifluoromethane Nutrition 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000012423 maintenance Methods 0.000 description 1
- IJDNQMDRQITEOD-UHFFFAOYSA-N n-butane Chemical compound CCCC IJDNQMDRQITEOD-UHFFFAOYSA-N 0.000 description 1
- OFBQJSOFQDEBGM-UHFFFAOYSA-N n-pentane Natural products CCCCC OFBQJSOFQDEBGM-UHFFFAOYSA-N 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 239000001294 propane Substances 0.000 description 1
- QQONPFPTGQHPMA-UHFFFAOYSA-N propylene Natural products CC=C QQONPFPTGQHPMA-UHFFFAOYSA-N 0.000 description 1
- 125000004805 propylene group Chemical group [H]C([H])([H])C([H])([*:1])C([H])([H])[*:2] 0.000 description 1
- 229930195734 saturated hydrocarbon Natural products 0.000 description 1
- 239000002344 surface layer Substances 0.000 description 1
- 229930195735 unsaturated hydrocarbon Natural products 0.000 description 1
- 239000003039 volatile agent Substances 0.000 description 1
Abstract
Description
【発明の詳細な説明】 （産業上の利用分野） 本発明は、化合物半導体の加工方法に関する。[Detailed description of the invention] (Industrial application field) The present invention relates to a compound semiconductor processing method.
（従来の技術）
加速された荷電粒子を用いた化合物半導体の加工方法と
して、あらしめパターニングされたレジスト等のマスク
を化合物半導体の表面に形成し、加速されたイオンをレ
ジスト上部より照射して露出した化合物半導体の領域を
表層あるいは数層にわたって除去する方法がある。(Prior art) As a compound semiconductor processing method using accelerated charged particles, a patterned mask such as a resist is formed on the surface of a compound semiconductor, and accelerated ions are irradiated from above the resist to expose it. There is a method of removing the surface layer or several layers of the compound semiconductor.
第３図は、基板１０４上にＧａＡｓを活性層１０１とし
て形成し、活性層１０１上にはＧａＡ４７Ａｓをクラッ
ド層１０２として形成したＧａＡｊ７Ａ ｓ ／ Ｇ
ａ Ａ ｓレーザ素子のクラッド層１０２に、Ａ「イオ
ンを用いて回折格子を作製する工程を示す。FIG. 3 shows a GaAj7A s/G structure in which GaAs is formed as an active layer 101 on a substrate 104, and GaA47As is formed as a cladding layer 102 on the active layer 101.
A process of fabricating a diffraction grating using A' ions in the cladding layer 102 of the a As laser device is shown.
まず６格子パターンを形成されるべきクラッド層１０２
上にマスク１０３を形成する（第３図ａ）。続いて、加
速イオンを照射して露出したクラッド層１０２をエツチ
ングしく第３図ｂ）、マスク１０３を除去することによ
りクラッド層１０３に回折格子を形成する（第３図Ｃ）
。このようにして、鋭いピーク波長を有する半導体レー
ザ素子を作製することが出来る。First, a cladding layer 102 on which a 6-lattice pattern is to be formed.
A mask 103 is formed on top (FIG. 3a). Subsequently, the exposed cladding layer 102 is etched by irradiation with accelerated ions (FIG. 3b), and the mask 103 is removed to form a diffraction grating in the cladding layer 103 (FIG. 3C).
. In this way, a semiconductor laser device having a sharp peak wavelength can be manufactured.
また、加速されたイオンを反応性ガスと共に半導体上に
照射して加工速度をはやめたり、反応の選択性を利用し
て、選択加工を行うことが出来る。Further, it is possible to reduce the processing speed by irradiating the semiconductor with accelerated ions together with a reactive gas, or to perform selective processing by utilizing the selectivity of the reaction.
たとえば、ＣＣｌ２Ｆ２ガスを用いたＧａＡｓ／ＧａＡ
ΩＡｓへテロ構造デバイスに於けるＧａＡＳの選択加工
は、ＦＥＴのゲート部分の加工にも用いられている。For example, GaAs/GaA using CCl2F2 gas
Selective processing of GaAS in ΩAs heterostructure devices is also used for processing the gate portion of FETs.
（発明が解決しようとする課題）
前記のような従来の加工方法では、アンダーカットされ
ることなく、マスクパターンに忠実な加工ができる。し
かし、加速されたイオンを用いるために、イオンのもつ
運動エネルギーにより半導体表面に損傷がはいり、これ
をとりのぞくためにさらに硫酸や塩酸などの腐食液をも
ちいて損傷層の除去を行うか、熱処理を施す必要がある
。(Problems to be Solved by the Invention) With the conventional processing method as described above, processing can be performed faithfully to the mask pattern without undercutting. However, since accelerated ions are used, the kinetic energy of the ions causes damage to the semiconductor surface. It is necessary to apply
（課題を解決するための手段）
本発明は、上記問題点を解決するために、加速イオンの
代わりにこの加速イオンに比べて運動エネルギーが小さ
く、半導体への損傷の小さい加速電子を用い、反応性ガ
スも通常では腐食性の乏しい炭化水素を用いる点に特徴
がある。(Means for Solving the Problems) In order to solve the above-mentioned problems, the present invention uses accelerated electrons, which have lower kinetic energy and cause less damage to semiconductors than accelerated ions, instead of accelerated ions, and It is also characterized by the fact that hydrocarbons, which are generally less corrosive, are used as the corrosive gases.
（作用）
本発明は上記の方法により、加速電子自身のもつエネル
ギーにより炭化水素化合物と半導体表面との反応が促進
されると、半導体構成原子と炭化水素構成原子あるいは
原子団からなる揮発性化合物として半導体表面から離脱
する現象を利用する。(Function) According to the above method, when the reaction between a hydrocarbon compound and a semiconductor surface is promoted by the energy of the accelerated electrons themselves, a volatile compound consisting of semiconductor constituent atoms and hydrocarbon constituent atoms or atomic groups is formed. Utilizes the phenomenon of detachment from the semiconductor surface.
（実施例）
第１図は本発明を実施する加工装置の構成を示す模式図
である。第１図において、１は電子ビーム発生部で、図
示されない電子ビーム集中用の電子レンズを通した電子
ビーム１１を化合物半導体に照射する。２は炭化水素化
合物を化合物半導体面に照射するためのノズルでガス導
入部３を通して真空容器１０内に導入される。４は加工
を行おうとする化合物半導体で、ステージ５に搭載され
ている。ステージ５は位置調整部６により真空容器１０
内における位置が調整可能である。(Example) FIG. 1 is a schematic diagram showing the configuration of a processing apparatus for implementing the present invention. In FIG. 1, reference numeral 1 denotes an electron beam generating section, which irradiates a compound semiconductor with an electron beam 11 passed through an electron lens (not shown) for concentrating the electron beam. Reference numeral 2 denotes a nozzle for irradiating the compound semiconductor surface with a hydrocarbon compound, which is introduced into the vacuum container 10 through the gas introduction part 3. 4 is a compound semiconductor to be processed, which is mounted on stage 5. The stage 5 is moved to the vacuum container 10 by the position adjustment unit 6.
The position within is adjustable.
本装置では、排気部７により反応系を低圧（１０−５Ｔ
ｏｒｒ以下）に保ったまま化合物半導体を加工できる。In this apparatus, the reaction system is kept under low pressure (10-5T) by the exhaust part 7.
compound semiconductors can be processed while maintaining the
この点は本発明における重要な特徴であり、半導体表面
を種々の汚染物質から保護することが出来る。This point is an important feature of the present invention, and can protect the semiconductor surface from various contaminants.
なお、第１図は、本発明を実施するための基本的な構成
であり、電子ビーム集束性能の改善に伴う装置の付加、
パターン描画のための偏向器等やその制御装置等を制限
するものではない。また、化合物半導体表面に反応活性
な物質を均一に照射する特性を有するようなノズル形状
を制限するものではない。Note that FIG. 1 shows the basic configuration for implementing the present invention, and the addition of devices to improve the electron beam focusing performance,
This does not limit the deflector or the like for pattern drawing or the control device thereof. Furthermore, the shape of the nozzle is not limited to a shape that has the characteristic of uniformly irradiating the surface of a compound semiconductor with a reactive substance.
第２図は本発明により加工された化合物半導体のホトル
ミネッセンス強度のａｌｌｌｌ定結水す。ここでは、電
子ビームを走査するための偏向器およびその制御装置を
付加して、化合物半導体面の任意の領域の除去加工（エ
ツチング）を可能にしている。また、化合物半導体とし
てガリウムヒ素（ＧａＡｓ）を、反応性ガスとしてはメ
タン（Ｃ）１４）をそれぞれ用い、加速電圧１０ｋＶに
て加速した電子線により、 ５００μｍ Ｘ５００μ■
の領域を化合物半導体表面より除去した時の除去部位に
おけるホトルミネッセンス強度を除去層厚に対して測定
したものである。なお、電子ビームの照射と反応性ガス
の照射とは同時でも良いし、交互に行なっても良い。FIG. 2 shows the photoluminescence intensity of the compound semiconductor processed according to the present invention. Here, a deflector for scanning the electron beam and its control device are added to enable removal processing (etching) of an arbitrary region of the compound semiconductor surface. In addition, using gallium arsenide (GaAs) as a compound semiconductor and methane (C)14) as a reactive gas, an electron beam accelerated at an acceleration voltage of 10 kV was used to form a 500 μm x 500 μ■
The photoluminescence intensity at the removed region when the region is removed from the compound semiconductor surface is measured with respect to the removed layer thickness. Note that the electron beam irradiation and the reactive gas irradiation may be performed simultaneously or alternately.
ホトルミネッセンスの強度変化は、結晶に対する１員傷
程度に非常に敏感であり、ｔｉ傷の程度の小さいものほ
どホトルミネッセンスの強度減少は少ない。なお、第２
図にはＡｒ＋イオンビームを用いてＧａＡｓ表面の除去
を行なった時のホトルミネッセンス強度の変化を比較す
るために示した。Changes in the intensity of photoluminescence are very sensitive to single-member scratches on the crystal, and the smaller the degree of the scratch, the less the decrease in the intensity of photoluminescence. In addition, the second
The figure is shown for comparison of changes in photoluminescence intensity when the GaAs surface is removed using an Ar+ ion beam.
図から明らかなように、本発明による加工方法では、イ
オンビーム利用の場合に比べて損傷の程度が大幅に小さ
いことがわかる。Ａｒ＋イオンのようにイオンを集束ビ
ーム源とする加工法では、半導体損傷はおもにイオンの
運動エネルギによるものと考えられる。一方、電子線の
持つ運動エネルギーは僅かであるため、本質的に半導体
に与える損傷は小さい。As is clear from the figure, the degree of damage is significantly smaller in the processing method according to the present invention than in the case of using an ion beam. In processing methods that use ions as a focused beam source, such as Ar+ ions, semiconductor damage is thought to be mainly due to the kinetic energy of the ions. On the other hand, since the kinetic energy of the electron beam is small, essentially the damage caused to the semiconductor is small.
本実施例で用いた化合物半導体はガリウムヒ素であり、
反応活性な物質としてメタンを用いているが、被加工化
合物半導体および反応活性な物質である炭化水素を限定
するものではない。たとえば、炭化水素としては、エタ
ン（Ｃ２Ｈ６） 、プロパン（Ｃ３Ｈ８）、ブタン（Ｃ
４Ｈ１ｏ）等の飽和炭化水素、エチレン（Ｃ２Ｈ２）
、プロピレン（Ｃ３Ｈ７）等の非飽和炭化水素、メタノ
ール（ＣＨＯＨ） 、エタノール（Ｃ２Ｈ５０Ｈ）等の
アルコール系なども通常では腐食性の乏しい物質である
が、電子エネルギーを供与した状態では化合物半導体に
対し反応活性な物質である。また。The compound semiconductor used in this example is gallium arsenide,
Although methane is used as a reactive substance, the compound semiconductor to be processed and hydrocarbons as a reactive substance are not limited. For example, hydrocarbons include ethane (C2H6), propane (C3H8), and butane (C3H8).
Saturated hydrocarbons such as 4H1o), ethylene (C2H2)
, unsaturated hydrocarbons such as propylene (C3H7), alcohols such as methanol (CHOH) and ethanol (C2H50H), etc., are normally less corrosive substances, but they react with compound semiconductors when provided with electronic energy. It is an active substance. Also.
反応性ガスと電子ビームの照射は同時、交互のいずれで
も良い。The reactive gas and electron beam irradiation may be performed simultaneously or alternately.
（発明の効果）
以上述べてきたように、本発明によれば、電子線照射に
よる化学反応を用いているため、損傷の小さい化合物半
導体の加工を比較的短時間に行うことができる。また、
集束した加速電子を用いることによりパターンの直接描
画が可能で、マスク形成の必要がなくプロセスが簡略化
され、極めて高精度な加工が可能である。さらに、反応
活性な物質として腐食性に乏しい炭化水素を用いている
ため、装置の保守が簡便であるなど、実用的に非常に有
用である。(Effects of the Invention) As described above, according to the present invention, since a chemical reaction by electron beam irradiation is used, a compound semiconductor with little damage can be processed in a relatively short time. Also,
By using focused accelerated electrons, it is possible to directly draw a pattern, there is no need to form a mask, the process is simplified, and extremely high-precision processing is possible. Furthermore, since a hydrocarbon with poor corrosiveness is used as a reactive substance, maintenance of the apparatus is simple, and it is very useful from a practical point of view.
第１図は本発明を実施する加工装置の概略構成を示した
図、第２図は本発明の一実施例により得られた被加工化
合物半導体のホトルミネッセンス強度の測定結果を示し
た図、第３図は従来のイオンビームによる゛エツチング
加工を説明するための図である。
１０１−Ｇ ａ Ａ ｓ活性層、１０２−Ｇ ａ Ａρ
ＡＳクラッド層、１０３・・・レジストマスク、１０４
・・・ＧａＡｓ基板、１・・・電子ビーム発生部、２・
・・ノズル、３・・・ガス導入部、４・・・化合物半導
体、５・・・ステージ、６・・・位置調整部、７・・・
排気部、１０・・・真空容器。
第１図
第２図
除去層厚（戸）″FIG. 1 is a diagram showing a schematic configuration of a processing apparatus for carrying out the present invention, FIG. FIG. 3 is a diagram for explaining conventional etching processing using an ion beam. 101-G a As active layer, 102- G a Aρ
AS cladding layer, 103... resist mask, 104
...GaAs substrate, 1...electron beam generation section, 2.
... Nozzle, 3... Gas introduction section, 4... Compound semiconductor, 5... Stage, 6... Position adjustment section, 7...
Exhaust section, 10... vacuum container. Figure 1 Figure 2 Removal layer thickness (door)''
Claims (1)
ガスを照射すると共に、加速電子を照射することにより
、該化合物半導体の加速電子照射領域を加工することを
特徴とする化合物半導体の加工方法。 ２）請求項１記載の化合物半導体の加工方法において、
前記加速電子を集束し、前記炭化水素が照射された化合
物半導体の表面を走査して加工パターンを直接描画する
ことを特徴とする化合物半導体の加工方法。[Claims] 1) Processing the accelerated electron irradiation region of the compound semiconductor by irradiating the surface of the compound semiconductor with a hydrocarbon gas as a reactive gas and irradiating accelerated electrons. Compound semiconductor processing method. 2) In the compound semiconductor processing method according to claim 1,
A method for processing a compound semiconductor, characterized in that the accelerated electrons are focused and the surface of the compound semiconductor irradiated with the hydrocarbon is scanned to directly draw a processing pattern.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP593589A JPH0793285B2 (en) | 1989-01-17 | 1989-01-17 | Compound semiconductor processing method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP593589A JPH0793285B2 (en) | 1989-01-17 | 1989-01-17 | Compound semiconductor processing method |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH02188918A true JPH02188918A (en) | 1990-07-25 |
| JPH0793285B2 JPH0793285B2 (en) | 1995-10-09 |
Family
ID=11624757
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP593589A Expired - Lifetime JPH0793285B2 (en) | 1989-01-17 | 1989-01-17 | Compound semiconductor processing method |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0793285B2 (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5352330A (en) * | 1992-09-30 | 1994-10-04 | Texas Instruments Incorporated | Process for producing nanometer-size structures on surfaces using electron beam induced chemistry through electron stimulated desorption |
| US5700628A (en) * | 1994-05-31 | 1997-12-23 | Texas Instruments Incorporated | Dry microlithography process |
-
1989
- 1989-01-17 JP JP593589A patent/JPH0793285B2/en not_active Expired - Lifetime
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5352330A (en) * | 1992-09-30 | 1994-10-04 | Texas Instruments Incorporated | Process for producing nanometer-size structures on surfaces using electron beam induced chemistry through electron stimulated desorption |
| US5700628A (en) * | 1994-05-31 | 1997-12-23 | Texas Instruments Incorporated | Dry microlithography process |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0793285B2 (en) | 1995-10-09 |
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