JPH0218805A - Dielectric ceramic composition for high frequency - Google Patents
Dielectric ceramic composition for high frequencyInfo
- Publication number
- JPH0218805A JPH0218805A JP63167703A JP16770388A JPH0218805A JP H0218805 A JPH0218805 A JP H0218805A JP 63167703 A JP63167703 A JP 63167703A JP 16770388 A JP16770388 A JP 16770388A JP H0218805 A JPH0218805 A JP H0218805A
- Authority
- JP
- Japan
- Prior art keywords
- composition
- specified
- components
- ceramic composition
- dielectric ceramic
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000000919 ceramic Substances 0.000 title claims description 11
- 239000013078 crystal Substances 0.000 claims abstract description 4
- 239000002994 raw material Substances 0.000 abstract description 15
- 239000012535 impurity Substances 0.000 abstract description 9
- 238000009413 insulation Methods 0.000 abstract description 9
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 abstract description 3
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 abstract description 3
- ZKATWMILCYLAPD-UHFFFAOYSA-N niobium pentoxide Chemical compound O=[Nb](=O)O[Nb](=O)=O ZKATWMILCYLAPD-UHFFFAOYSA-N 0.000 abstract 2
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 abstract 1
- QVQLCTNNEUAWMS-UHFFFAOYSA-N barium oxide Inorganic materials [Ba]=O QVQLCTNNEUAWMS-UHFFFAOYSA-N 0.000 abstract 1
- 229910052593 corundum Inorganic materials 0.000 abstract 1
- 229910001845 yogo sapphire Inorganic materials 0.000 abstract 1
- 239000010955 niobium Substances 0.000 description 6
- 229910052573 porcelain Inorganic materials 0.000 description 6
- 230000007423 decrease Effects 0.000 description 4
- 239000000463 material Substances 0.000 description 3
- 239000000654 additive Substances 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 229910052758 niobium Inorganic materials 0.000 description 2
- 239000010936 titanium Substances 0.000 description 2
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 description 2
- 230000000996 additive effect Effects 0.000 description 1
- AYJRCSIUFZENHW-UHFFFAOYSA-L barium carbonate Chemical compound [Ba+2].[O-]C([O-])=O AYJRCSIUFZENHW-UHFFFAOYSA-L 0.000 description 1
- 239000011230 binding agent Substances 0.000 description 1
- 239000003990 capacitor Substances 0.000 description 1
- 229910010293 ceramic material Inorganic materials 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 238000001035 drying Methods 0.000 description 1
- 239000011572 manganese Substances 0.000 description 1
- 229940093474 manganese carbonate Drugs 0.000 description 1
- 235000006748 manganese carbonate Nutrition 0.000 description 1
- 239000011656 manganese carbonate Substances 0.000 description 1
- 229910000016 manganese(II) carbonate Inorganic materials 0.000 description 1
- XMWCXZJXESXBBY-UHFFFAOYSA-L manganese(ii) carbonate Chemical compound [Mn+2].[O-]C([O-])=O XMWCXZJXESXBBY-UHFFFAOYSA-L 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 229910000484 niobium oxide Inorganic materials 0.000 description 1
- URLJKFSTXLNXLG-UHFFFAOYSA-N niobium(5+);oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Nb+5].[Nb+5] URLJKFSTXLNXLG-UHFFFAOYSA-N 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- 230000006641 stabilisation Effects 0.000 description 1
- 238000011105 stabilization Methods 0.000 description 1
- 239000007858 starting material Substances 0.000 description 1
- 229910001887 tin oxide Inorganic materials 0.000 description 1
Landscapes
- Inorganic Insulating Materials (AREA)
- Compositions Of Oxide Ceramics (AREA)
- Ceramic Capacitors (AREA)
Abstract
Description
【発明の詳細な説明】
〔産業上の利用分野）
本発明は、高周波用誘電体磁器組成物に関し、特に高周
波用又は温度補償用として好適な高周波用誘電体磁器組
成物に関するものである。DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to a dielectric ceramic composition for high frequencies, and particularly to a dielectric ceramic composition for high frequencies suitable for high frequencies or temperature compensation.
従来、マイクロ波回路においてはフィルターの小型化、
固体発振器の周波数安定化、インピーダンス整合用、コ
ンデンサ等の目的に広（誘電体磁器材料が使用されてい
る。このようなマイクロ波領域に使用される誘電体磁器
材料としては、ある程度の高誘電率を有し、無負（ｉＱ
が高く、かつ共振周波数温度係数が小さいことが要求さ
れる。そして、このような用途に使用される誘電体磁器
材料としてＢａ０−ＴｉＯｔ−５ｎ０１系の磁器組成物
が知られている（特開昭５８−７３９０８号公報）。Conventionally, in microwave circuits, filters have been made smaller;
Dielectric porcelain materials are widely used for purposes such as frequency stabilization of solid-state oscillators, impedance matching, and capacitors. Dielectric porcelain materials used in such microwave regions have a certain degree of high dielectric constant. , and is unnegative (iQ
It is required that the resonant frequency temperature coefficient is high and the resonant frequency temperature coefficient is small. A Ba0-TiOt-5n01 ceramic composition is known as a dielectric ceramic material used for such purposes (Japanese Patent Laid-Open No. 73908/1983).
（発明が解決しようとする課題〕
上記Ｂａ０−ＴｉＯ□−５ｎｕｇ系の磁器組成物では、
特別に不純物の少ない高純度原料から造れば電気的特性
の良好なものが得られるが、種々の不純物を比較的多く
含む一般の工業用原料から造ると、これらの不純物（主
としてＮｂ、Ｏ５）のためにＱ値（１／ｌａｎ δ）や
絶縁抵抗が低下し、実用上充分な特性を安定的に得るこ
とは難しいし、そうかといって不純物の少ない高純度の
原料は高価であり、従来技術では安価な原料により電気
的特性に優れた磁器組成物を得ることは困難であった。(Problem to be solved by the invention) In the Ba0-TiO□-5nug-based porcelain composition,
Products with good electrical properties can be obtained if they are made from high-purity raw materials with especially few impurities, but if they are made from general industrial raw materials that contain relatively large amounts of various impurities, these impurities (mainly Nb, O5) are Therefore, the Q value (1/lan δ) and insulation resistance decrease, making it difficult to stably obtain sufficient characteristics for practical use.On the other hand, high-purity raw materials with few impurities are expensive, and conventional technology However, it has been difficult to obtain a porcelain composition with excellent electrical properties using inexpensive raw materials.
本発明は、上記従来の問題点を的確に解消した誘電体磁
器組成物を提供することを目的とするものである。An object of the present invention is to provide a dielectric ceramic composition that accurately solves the above-mentioned conventional problems.
本発明は、Ｂａｄ、Ｔｉ０ｇ及びＳｎｏｗの３成分を有
する誘電体Ｍｉ器組成物であって、これら主成分の組成
式をＢａＯ・ｘ （（１−Ｙ） Ｔｉ０ｔ−ｙＳｎＯｔ
）で表わしたときに、ｘ、ｙがそれぞれモル比で４＜
ｘ＜４．５．０＜ｙ＜０．１０の条件を満たし、かつ結
晶構造としてＢａ （Ｔｉ ・Ｓｎ）ａｏｗとＢａｇ（
Ｔｉ ・Ｓｎ）１０ｇ。The present invention is a dielectric composition having three components: Bad, Ti0g, and Snow, and the compositional formula of these main components is BaO x ((1-Y) Ti0t-ySnOt
), when x and y each have a molar ratio of 4<
It satisfies the conditions of x<4.5.0<y<0.10, and has a crystal structure of Ba (Ti ・Sn) aow and Bag (
Ti・Sn) 10g.
を存する組成分１００重量％に対し、副成分としてＭｎ
Ｏ及び／又はＡＩ、Ｏ，を０．０１〜２．０重量％添加
含有することを特徴とする高周波用誘電体磁器組成物で
ある。100% by weight of the composition containing Mn as a subcomponent.
This is a high frequency dielectric ceramic composition characterized by containing O and/or AI, O, in an amount of 0.01 to 2.0% by weight.
以下、本発明を実施例に基づいて詳細に説明する。 Hereinafter, the present invention will be explained in detail based on examples.
出発原料として炭酸バリウム（ＢａＣＯ３） ＋酸化チ
タン（ＴｉＯｚ）、酸化スズ（ＳｎＯｔ）、炭酸マンガ
ン（ＭｎＣＯｘ） ＋酸化アルミニウム（ＡＩＪｚ）及
び酸化ニオブ（Ｎｂ□０．）を用い、各主成分及び副成
分を酸化物としたときに第１表の成分比率となるように
秤量調合し、まず、これらをボールミルで２０時時間式
混合した。Using barium carbonate (BaCO3) + titanium oxide (TiOz), tin oxide (SnOt), manganese carbonate (MnCOx) + aluminum oxide (AIJz) and niobium oxide (Nb□0.) as starting materials, each main component and subcomponent They were weighed and prepared to have the component ratios shown in Table 1 when used as an oxide, and first, they were mixed in a ball mill for 20 hours.
この混合原料を脱水、乾燥し、０．５ｔ／ｃｄの圧力で
プレスして板底型し１２２０℃で２時間仮焼成し、その
後これをボールミルで２０時時間式粉砕した。This mixed raw material was dehydrated and dried, pressed at a pressure of 0.5 t/cd to form a plate bottom, and calcined at 1220° C. for 2 hours, and then pulverized in a ball mill for 20 hours.
それから、これを脱水、乾燥したのち、バインダーを適
当量加えて造粒し、直径１２１１．長さ６鶴の円柱状に
成型して１３６０℃で２時間焼成した。Then, after dehydrating and drying this, an appropriate amount of binder was added and granulated, with a diameter of 1211. It was molded into a cylindrical shape with a length of 6 cranes and fired at 1360°C for 2 hours.
こうして得られた磁器を直径１０ｕ、長さ５ｍｍの円柱
状、及び直径１０龍、厚さ０．５龍の円板状に加工し、
前者については電気的特性として比誘電率ε７．無負荷
Ｑ及び共振周波数温度係数ＴＣ。The porcelain thus obtained was processed into a cylinder shape with a diameter of 10 u and a length of 5 mm, and a disc shape with a diameter of 10 mm and a thickness of 0.5 mm.
Regarding the former, the electrical property is a relative dielectric constant ε7. No-load Q and resonant frequency temperature coefficient TC.
を測定し、後者については円板の上下両面に電極を塗布
し、絶縁抵抗（ｔｆｆ；抗率ρ）を測定した。For the latter, electrodes were applied to both the upper and lower surfaces of the disk, and the insulation resistance (tff; resistivity ρ) was measured.
なお、前記比誘電率ε、とＱ値は誘電体共振器法により
２５℃の温度条件下で測定し、前記ＴＣ２については一
４０〜＋８０℃における共振周波数の温度変化から求め
、絶縁抵抗については温度２５℃の温度条件下で直流電
圧２５Ｖを印加して測定しこのように得られた結果を第
１表に示す。The relative permittivity ε and the Q value were measured at a temperature of 25°C using the dielectric resonator method, and the TC2 was determined from the temperature change in the resonant frequency from -40°C to +80°C, and the insulation resistance was determined by Measurements were made under a temperature condition of 25° C. by applying a DC voltage of 25 V, and the results obtained are shown in Table 1.
以下余白
この表において試料番号に※を付したものは、本発明範
囲外のものであるが、試料番号ｌのものは、一般の工業
用原料に大抵の場合に含まれている不純物であるＮｂ□
０．は勿論、ＭｎＯ＋ Ａｔ、Ｏｓも含まない高純度原
料から造った試料であり、試料番号２は、不純物を比較
的多く含む一般の工業用原料から造ったもので添加物と
して−ｎｏも＾ｌ、０．も含まない場合であり、試料番
号３．４．１５，１６゜１８．１９．２１及び２３は副
成分としてＭｎ０Ａｌ！０３．不純物としてＮｂ、０．
のいずれか少なくとも一種を含むがｘ、ｙのいずれか一
方、あるいはＭｎＯ及び／又は＾１！０．の添加含有量
が本発明範囲外となっているものである。Margins below In this table, sample numbers marked with * are outside the scope of the present invention, but sample number 1 is Nb, an impurity that is often contained in general industrial raw materials. □
0. Of course, it is a sample made from a high-purity raw material that does not contain MnO + At or Os, and sample number 2 is made from a general industrial raw material that contains relatively many impurities and does not contain -no^l as an additive. 0. Sample numbers 3.4.15, 16°18.19.21 and 23 contain Mn0Al! as a subcomponent. 03. Nb as an impurity, 0.
It contains at least one of x, y, or MnO and/or ^1!0. The added content of is outside the scope of the present invention.
また、試料番号５〜１４．１７．２０及び２２は本発明
範囲内のものであるが、１７は高純度原料から造った、
Ｎｂ、ｏ、を含まない主成分にＭｎＯ。In addition, sample numbers 5 to 14, 17, 20 and 22 are within the scope of the present invention, but sample number 17 was made from high purity raw materials.
MnO is the main component that does not contain Nb or o.
ＡＩ！０３を添加した場合である。AI! This is the case when 03 was added.
上表から、本発明範囲内ではｔ、、ｑ、絶縁抵抗が大き
く、ＴＣｔの小さい磁器組成物が得られ、特に、不純物
たるＮｂ、Ｏ，を含むものより優れた電気的特性を有す
るものとなるだけでなく、これを含まない高価な高純度
原料を使用したものと同等又はこれより優れた電気的特
性（Ｑ、絶縁抵抗）の磁器組成物が得られることがわか
る（試料番号１７）。From the above table, within the scope of the present invention, a ceramic composition with large t, q, insulation resistance and small TCt can be obtained, and in particular, it has electrical properties superior to those containing impurities such as Nb and O. It can be seen that not only this, but also a porcelain composition with electrical properties (Q, insulation resistance) equivalent to or superior to those using expensive high-purity raw materials that do not contain this material can be obtained (sample number 17).
次に、本発明組成範囲の限定理由を具体的に述べる。Next, the reasons for limiting the composition range of the present invention will be specifically described.
Ｘが４以下であるとＴＣ，がプラス側に大きくなり過ぎ
（試料番号１８．１９） 、Ｘが４．５以上になるとＱ
値が低くなる（試料番号２１）。When X is 4 or less, TC becomes too large on the positive side (sample number 18.19), and when X is 4.5 or more, Q
The value becomes lower (sample number 21).
ｙがｏ、 ｉ ｏ以上になるとε、が小さくなり、Ｑ値
も低下する（試料番号２３）。When y exceeds o, io, ε becomes small and the Q value also decreases (sample number 23).
ＭｎＯ及び／又はＡ１１（ｈの添加含有量が０．０１重
世％未満であるとＱ及び絶縁抵抗が低下しく試料番号１
〜４）、２．０重量％を超えるとＱが低下する（試料番
号１５．１６） 。If the added content of MnO and/or A11 (h) is less than 0.01%, the Q and insulation resistance will decrease and sample number 1
~4), Q decreases when it exceeds 2.0% by weight (sample number 15.16).
以上述べたように、本発明のＢａ０−ＴＩＯｔ−５ｎ０
１系誘電体磁器組成物では、高価な高純度原料を使用し
なくても、安価な一般の工業用原料を使い、添加物とし
てＭｎＯ及び／又はＡｌｔｏｚを添加することにより、
原料中の不純物（主としてＮｂ□０．）に起因するＱ（
ａや絶縁抵抗の低下が改善され、しかも高純度原料を使
用した場合を上回る電気的特性が得られる効果がある。As mentioned above, Ba0-TIOt-5n0 of the present invention
In the type 1 dielectric ceramic composition, without using expensive high-purity raw materials, by using inexpensive general industrial raw materials and adding MnO and/or Altoz as additives,
Q(
This has the effect of improving the reduction in a and insulation resistance, and providing better electrical characteristics than when using high-purity raw materials.
したがって、本発明の誘電体磁器組成物は、高周波帯（
特にｔｌＨＦ−５ＩＩＦ帯）において誘電率が高く、低
損失で、特性の温度変化が小さいことを要求される誘電
体共振器、誘電体基板、コンデンサ等に、具体的にはｔ
ｌＨＦ−５ＩＩＦ帯無線帯体線器や計測器等（自動車用
電話、トランシーバ、衛星通信機器、レーダー等）に広
く応用できるものである。Therefore, the dielectric ceramic composition of the present invention can be used in high frequency bands (
Specifically, t
It can be widely applied to lHF-5IIF band wireless line devices, measuring instruments, etc. (car telephones, transceivers, satellite communication equipment, radars, etc.).
Claims (1)
有する誘電体磁器組成物であって、これら主成分の組成
式をＢａＯ・ｘ〔（１−ｙ）ＴｉＯ＿２・ｙＳｎＯ＿２
〕で表わしたときに、ｘ，ｙがそれぞれモル比で４＜ｘ
＜４．５，０＜ｙ＜０．１０の条件を満たし、かつ結晶
構造としてＢａ（Ｔｉ・Ｓｎ）＿４Ｏ＿９とＢａ＿２（
Ｔｉ・Ｓｎ）＿９Ｏ＿２０を有する組成分１００重量％
に対し、副成分としてＭｎＯ及び／又はＡｌ＿２Ｏ＿３
を０．０１〜２．０重量％添加含有することを特徴とす
る高周波用誘電体磁器組成物。(1) A dielectric ceramic composition having three components, BaO, TiO_2 and SnO_2, whose compositional formula of these main components is BaO x [(1-y) TiO_2 x SnO_2
], when x and y each have a molar ratio of 4<x
<4.5,0<y<0.10, and the crystal structure is Ba(Ti・Sn)_4O_9 and Ba_2(
Ti・Sn)_9O_20 composition 100% by weight
However, MnO and/or Al_2O_3 as subcomponents
A dielectric ceramic composition for high frequency, characterized in that it contains 0.01 to 2.0% by weight of.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP63167703A JP2683751B2 (en) | 1988-07-07 | 1988-07-07 | High frequency dielectric ceramic composition |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP63167703A JP2683751B2 (en) | 1988-07-07 | 1988-07-07 | High frequency dielectric ceramic composition |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH0218805A true JPH0218805A (en) | 1990-01-23 |
| JP2683751B2 JP2683751B2 (en) | 1997-12-03 |
Family
ID=15854650
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP63167703A Expired - Lifetime JP2683751B2 (en) | 1988-07-07 | 1988-07-07 | High frequency dielectric ceramic composition |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2683751B2 (en) |
-
1988
- 1988-07-07 JP JP63167703A patent/JP2683751B2/en not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| JP2683751B2 (en) | 1997-12-03 |
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