JPH02187911A - Magneto-resistance effect type head - Google Patents
Magneto-resistance effect type headInfo
- Publication number
- JPH02187911A JPH02187911A JP724689A JP724689A JPH02187911A JP H02187911 A JPH02187911 A JP H02187911A JP 724689 A JP724689 A JP 724689A JP 724689 A JP724689 A JP 724689A JP H02187911 A JPH02187911 A JP H02187911A
- Authority
- JP
- Japan
- Prior art keywords
- film
- thickness
- insulating film
- substrate
- adhesive
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 230000000694 effects Effects 0.000 title abstract description 5
- 230000005291 magnetic effect Effects 0.000 claims abstract description 26
- 239000000758 substrate Substances 0.000 claims abstract description 16
- 239000010408 film Substances 0.000 abstract description 99
- 239000000853 adhesive Substances 0.000 abstract description 22
- 230000004907 flux Effects 0.000 abstract description 9
- 230000007423 decrease Effects 0.000 abstract description 7
- 239000000696 magnetic material Substances 0.000 abstract description 4
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 abstract description 3
- 239000004020 conductor Substances 0.000 abstract description 3
- 239000003302 ferromagnetic material Substances 0.000 abstract description 3
- 239000010409 thin film Substances 0.000 abstract description 3
- 229910000859 α-Fe Inorganic materials 0.000 abstract description 3
- 229910003271 Ni-Fe Inorganic materials 0.000 abstract description 2
- 229910003286 Ni-Mn Inorganic materials 0.000 abstract description 2
- 229910045601 alloy Inorganic materials 0.000 abstract description 2
- 239000000956 alloy Substances 0.000 abstract description 2
- 230000003247 decreasing effect Effects 0.000 abstract 2
- 238000010030 laminating Methods 0.000 abstract 1
- 230000001070 adhesive effect Effects 0.000 description 19
- 239000000463 material Substances 0.000 description 10
- 239000002313 adhesive film Substances 0.000 description 5
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 4
- 238000000034 method Methods 0.000 description 2
- 235000012239 silicon dioxide Nutrition 0.000 description 2
- 239000000377 silicon dioxide Substances 0.000 description 2
- 238000004544 sputter deposition Methods 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 229910000640 Fe alloy Inorganic materials 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 229920006395 saturated elastomer Polymers 0.000 description 1
Landscapes
- Magnetic Heads (AREA)
Abstract
Description
【発明の詳細な説明】
産業上の利用分野
本発明は、磁気記録媒体からデータを読みだす磁気ヘッ
ドの内で磁気抵抗効果型ヘッドに関するものである。DETAILED DESCRIPTION OF THE INVENTION Field of the Invention The present invention relates to a magnetoresistive head among magnetic heads for reading data from a magnetic recording medium.
従来の技術
第4図及び第5図は従来の磁気抵抗効果型ヘッドを示す
斜視図及び側断面図である。第4図及び第5図において
1はNi−Mnフェライト等の磁性材料で出来た基板、
2は基板1上に形成された絶縁膜で、絶縁膜2はアルミ
ナや二酸化シリコン等の非磁性材料によって構成されて
いる。又絶縁膜2はスパッタリング法等の薄膜形成技術
を用いて形成される。3は絶縁III 2の上に形成さ
れた磁気抵抗効果型素子膜(以下MR素子膜と略す)で
、MR素子膜3はNi−Fe合金等の強磁性材料によっ
て構成される。4はMR素子膜3の上に形成された導電
膜で、導電膜4はTi等の高導電材料で構成される。5
は導電膜4上の端部に形成されたリードで、リード5は
銅や金等の材料によって形成されている。6は導電膜4
上及び絶縁膜2上に形成された絶縁膜で、絶縁膜6は絶
縁膜2と同じ様にアルミナや二酸化シリコン等の非磁性
材料によって構成されている。7は磁性カバー材で、磁
性カバー材7は絶縁膜6の上に接着剤8によって接着さ
れている。又磁性カバー材7は基板1と同じ様にN i
−Mnフェライト等の磁性材料で出来ている。又、第5
図において61は導電膜4及び絶縁膜6及び接着剤8の
厚みである。G2は絶縁膜2の膜厚を示している。この
様な磁気抵抗効果型ヘッドは一般にMR素子膜3の平滑
性を重視しており、平滑性の良い絶縁il! 2の上に
MR素子膜3を形成するのが普通である。なぜならMR
素子膜3の平滑性は磁気特性に影響を与えると考えられ
ているからである。BACKGROUND OF THE INVENTION FIGS. 4 and 5 are a perspective view and a sectional side view of a conventional magnetoresistive head. 4 and 5, 1 is a substrate made of a magnetic material such as Ni-Mn ferrite;
Reference numeral 2 denotes an insulating film formed on the substrate 1, and the insulating film 2 is made of a nonmagnetic material such as alumina or silicon dioxide. Further, the insulating film 2 is formed using a thin film forming technique such as a sputtering method. Reference numeral 3 denotes a magnetoresistive element film (hereinafter abbreviated as MR element film) formed on the insulator III 2, and the MR element film 3 is made of a ferromagnetic material such as a Ni--Fe alloy. 4 is a conductive film formed on the MR element film 3, and the conductive film 4 is made of a highly conductive material such as Ti. 5
is a lead formed at the end of the conductive film 4, and the lead 5 is made of a material such as copper or gold. 6 is a conductive film 4
The insulating film 6 is formed on the insulating film 2, and the insulating film 6 is made of a non-magnetic material such as alumina or silicon dioxide, like the insulating film 2. 7 is a magnetic cover material, and the magnetic cover material 7 is bonded onto the insulating film 6 with an adhesive 8. Also, the magnetic cover material 7 is made of Ni like the substrate 1.
-Made of magnetic material such as Mn ferrite. Also, the fifth
In the figure, 61 is the thickness of the conductive film 4, the insulating film 6, and the adhesive 8. G2 indicates the thickness of the insulating film 2. Such a magnetoresistive head generally places emphasis on the smoothness of the MR element film 3, and uses an insulating film with good smoothness! Usually, an MR element film 3 is formed on top of the MR element film 2. Because MR
This is because the smoothness of the element film 3 is considered to affect the magnetic properties.
以上の様に構成された従来の磁気抵抗効果型ヘッドにつ
いて厚みG1と再生出力及び2次高調波歪のそれぞれの
関係について説明する。この例においてはG2を0.6
μmとして固定させた。第6図は従来の磁気抵抗効果型
ヘッドの厚みG1と再生出力及び2次高調波歪の関係を
示したグラフで、横軸は厚みG1をとり、単位はμmで
ある。Regarding the conventional magnetoresistive head configured as described above, the relationship between the thickness G1, reproduction output, and second harmonic distortion will be explained. In this example, G2 is 0.6
It was fixed as μm. FIG. 6 is a graph showing the relationship between the thickness G1, reproduction output, and second harmonic distortion of a conventional magnetoresistive head, where the horizontal axis represents the thickness G1, and the unit is μm.
左縦軸は標準化出力がとっである。又右縦軸は2次高調
波歪をとっており、単位はdBである。ここで、標準化
出力とは以下の様に定義する。最大再生出力をHlとし
、それぞれの厚みG1の再生出力をHとすると標準化出
力Pは次式で表される。The left vertical axis is the standardized output. The right vertical axis shows second harmonic distortion, and the unit is dB. Here, standardized output is defined as follows. If the maximum reproduction output is Hl and the reproduction output of each thickness G1 is H, the standardized output P is expressed by the following equation.
P=H/H1
今回の場合厚みG1が0.4μmの時再生出力が最大と
なっているので、G1が0.4μmの時標準化出力は1
となる。先ず標準化出力と厚みG1の関係について説明
する。第6図に示す様に標準化出力はG1が0.4μm
までは厚みG1が増すに従って大きくなっていく。さら
に厚みG1が0.4μmよりも大きくなっていくと今度
は標準化出力は低下してい(。厚みG1がこの様な極値
を持つわけは以下の通りである。接着剤8が厚くなり、
厚みG1が厚くなると導電膜4に発生した磁束が絶縁膜
6及び接着剤8を通って外部に逃げやす(なり、MR素
子膜3に十分な磁束が流れ込まないので再生出力が低下
し、標準化出力が小さくなってい(。又接着剤8が薄く
なり、厚みG1が0.4μmよりも厚みが減少していく
と、今度は導電膜4に発生した磁束は外部に逃げにくく
なり、はとんどの磁束はMR素子膜3に流れ込んで、M
R素子膜3は磁気的に飽和してしまう。そしてMR素子
膜3は磁束が過飽和状態になると再生出力は低下し、標
準化出力は小さ(なっていく。次に2次高調波歪と厚み
G1の関係について説明する。厚みG1が0.3μmの
時、2次高調波歪は最も小さ(なり厚みG1がそれより
厚くても薄くても2次高調波歪は大きくなる。従って標
準化出力及び2次高調波歪の両方とも導電膜4のMR素
子膜4が設けられていない方の磁性カッく一材7と導電
膜3までの膜厚すなわち厚みGlによってかなり変動す
る。P=H/H1 In this case, the playback output is maximum when the thickness G1 is 0.4μm, so when G1 is 0.4μm, the standardized output is 1
becomes. First, the relationship between the standardized output and the thickness G1 will be explained. As shown in Figure 6, the standardized output is 0.4 μm for G1.
It increases as the thickness G1 increases. When the thickness G1 further becomes larger than 0.4 μm, the standardized output decreases (The reason why the thickness G1 has such an extreme value is as follows.The adhesive 8 becomes thicker,
When the thickness G1 increases, the magnetic flux generated in the conductive film 4 tends to escape to the outside through the insulating film 6 and the adhesive 8 (as a result, sufficient magnetic flux does not flow into the MR element film 3, so the reproduction output decreases and the standardized output (.Also, as the adhesive 8 becomes thinner and the thickness G1 decreases below 0.4 μm, the magnetic flux generated in the conductive film 4 becomes difficult to escape to the outside, and the The magnetic flux flows into the MR element film 3, and the M
The R element film 3 becomes magnetically saturated. When the magnetic flux of the MR element film 3 becomes supersaturated, the reproduction output decreases and the standardized output decreases.Next, the relationship between the second harmonic distortion and the thickness G1 will be explained.When the thickness G1 is 0.3 μm, When the thickness G1 is thicker or thinner, the second harmonic distortion is the smallest (the second harmonic distortion becomes larger even if the thickness G1 is thicker or thinner than that).Therefore, both the standardized output and the second harmonic distortion are It varies considerably depending on the film thickness between the magnetic cup 7 on which the film 4 is not provided and the conductive film 3, that is, the thickness Gl.
発明が解決しようとする課題
磁性カバー材7を接着剤8で絶縁膜の上に接着する際に
、接着剤8の膜厚のばらつきは0.1μm位生じる。例
えば2次高調波歪を最低にするために61を0.3μm
にすると接着剤8の膜厚の誤差により、第6図に示す様
に標準化出力にほぼ0.25程のばらつきが生じる。即
ち各々の磁気抵抗効果型ヘッドの再生出力がそれぞれの
へ、ンドによってかなりばらついてくる。従って従来の
技術では完成品にかなりの再生出力のばらつきがあり歩
留りが悪かった。Problems to be Solved by the Invention When the magnetic cover material 7 is bonded onto the insulating film with the adhesive 8, the thickness of the adhesive 8 varies by about 0.1 μm. For example, to minimize second harmonic distortion, 61 is 0.3 μm.
In this case, due to an error in the film thickness of the adhesive 8, a variation of about 0.25 occurs in the standardized output as shown in FIG. That is, the reproduction output of each magnetoresistive head varies considerably depending on the respective heads. Therefore, with the conventional technology, the finished products had considerable variations in reproduction output, resulting in poor yields.
本発明は前記従来の問題点を解決するもので、接着剤の
膜厚の違いによって再生出力のばらつきを従来よりもか
なり小さく、磁気特性のばらつきを小さくすることがで
き、歩留りの良い磁気抵抗効果型ヘッドを提供する事を
目的としている。The present invention solves the above-mentioned conventional problems, and can significantly reduce variations in playback output due to differences in adhesive film thickness than before, and reduce variations in magnetic properties, resulting in a magnetoresistive effect with a high yield. The purpose is to provide mold heads.
課題を解決するための手段
この目的を達成するために、基板上に絶縁膜を設け、そ
の上に導電膜、磁気抵抗効果素子膜を順に設けたきいう
構成を有している。Means for Solving the Problems In order to achieve this object, an insulating film is provided on a substrate, and a conductive film and a magnetoresistive element film are sequentially provided thereon.
作 用
この構成により、基板と導電膜の間には絶縁膜しかなく
、その絶縁膜の膜厚を精度良くする事ができ、接着剤の
膜厚の厚薄によって生じる漏洩磁束の度合を軽減する事
ができる。Function: With this configuration, there is only an insulating film between the substrate and the conductive film, and the thickness of the insulating film can be made with high accuracy, reducing the degree of leakage magnetic flux caused by thicker or thinner adhesive films. Can be done.
実施例
第1図及び第2図はそれぞれ本発明の一実施例における
磁気抵抗効果型ヘッドの斜視図及び側断面図を示す。第
1図及び第2図において1は基板、2は絶縁膜、5はリ
ード、6は絶縁膜、7は磁性カバー材、8は接着剤でこ
れらは従来の構成と同じである。9は絶縁膜2の上に形
成された導電膜で、導電膜9はTi等の高導電材料によ
って構成されている。10は導電膜9の上のみに形成さ
れたMR素子膜で、Ni−Fe合金等の強磁性材料によ
って構成されている。又、第2図においてFlは絶縁膜
6及び接着剤8の厚みである。F2は絶縁膜2と導電膜
9の膜厚を示している。Embodiment FIGS. 1 and 2 respectively show a perspective view and a sectional side view of a magnetoresistive head according to an embodiment of the present invention. In FIGS. 1 and 2, 1 is a substrate, 2 is an insulating film, 5 is a lead, 6 is an insulating film, 7 is a magnetic cover material, and 8 is an adhesive, which are the same as the conventional structure. Reference numeral 9 denotes a conductive film formed on the insulating film 2, and the conductive film 9 is made of a highly conductive material such as Ti. Reference numeral 10 denotes an MR element film formed only on the conductive film 9, and is made of a ferromagnetic material such as a Ni-Fe alloy. Further, in FIG. 2, Fl is the thickness of the insulating film 6 and the adhesive 8. F2 indicates the film thickness of the insulating film 2 and the conductive film 9.
以上の様に構成された従来の磁気抵抗効果型ヘッドにつ
いて厚みFlと再生出力及び2次高調波歪のそれぞれの
関係について説明する。本実施例の場合F2を0.4μ
mとして固定させた。第3図は従来の磁気抵抗効果型ヘ
ッドの厚みFlと再生出力及び2次高調波歪の関係を示
したグラフで、横軸は厚みFlをとり、単位はμmであ
る。左縦軸を標準化出力がとっている。又右縦軸は2次
高調波歪を七っており、単位はdBである。先ず標準化
出力と厚みFlの関係について説明する。第3図に示す
様に標準化出力は厚みFlが0.6μmまでは厚みFl
が増すに従って太き(なっていく。さらに厚みFlが0
.6μmよりも厚みが大きくなっていくと今度は標準化
出力は低下していく。次に2次高調波歪と厚みFlの関
係について説明する。厚みFlが0.65μmの時が2
次高調波歪が小さ(なり厚みFlがそれより厚くても薄
(でも2次高調波歪は大きくなる。本実施例の磁気抵抗
効果型ヘッドの標準化出力の曲線は従来の磁気抵抗効果
型ヘッドの標準化出力の曲線のよりも全体的に緩やかな
変化をしている。2次高調波歪が最低になる様な厚さF
lは0.65μmであるから、0.65μmを目標にし
て接着剤8の膜厚を調整する。しかし前述の様に様に接
着剤8の膜厚には約0.1μmの誤差がある。従って第
3図に示す様にそのばらつきを考慮すると標準化出力に
はほぼ0.1はどのばらつきが生じる。従来はほぼ0.
25はどのばらつきがあったので、かなりの改善がみら
れる。この様に従来よりも標準化出力のばらつきが小さ
くなったのは、導電膜9のMR素子膜10が設けられて
いない方の基板1までの距離は非常に精度良く決められ
るからである。というのはその距離は絶縁膜2の膜厚に
よって決まり、絶縁膜2はスパッタリング法等の薄膜形
成技術により0.Olum−0,005μmという精度
で形成されるからである。これは接着剤8の膜厚の精度
よりも10倍〜20倍良い。Regarding the conventional magnetoresistive head configured as described above, the relationship between the thickness Fl, reproduction output, and second harmonic distortion will be explained. In this example, F2 is 0.4μ
It was fixed as m. FIG. 3 is a graph showing the relationship between the thickness Fl, reproduction output, and second harmonic distortion of a conventional magnetoresistive head, where the horizontal axis represents the thickness Fl, and the unit is μm. The left vertical axis is the standardized output. The right vertical axis represents the second harmonic distortion, and the unit is dB. First, the relationship between the standardized output and the thickness Fl will be explained. As shown in Figure 3, the standardized output is for the thickness Fl up to 0.6 μm.
As it increases, it becomes thicker (becomes).
.. As the thickness increases beyond 6 μm, the standardized output decreases. Next, the relationship between second harmonic distortion and thickness Fl will be explained. 2 when the thickness Fl is 0.65 μm
The second harmonic distortion is small (the thickness Fl is thicker or thinner), but the second harmonic distortion is large. Overall, the change is more gradual than that of the normalized output curve.Thickness F that minimizes second harmonic distortion
Since l is 0.65 μm, the film thickness of the adhesive 8 is adjusted to a target of 0.65 μm. However, as mentioned above, there is an error of about 0.1 μm in the film thickness of the adhesive 8. Therefore, as shown in FIG. 3, when considering the variations, a variation of approximately 0.1 occurs in the standardized output. Conventionally, it was approximately 0.
25 had some variation, so a considerable improvement can be seen. The reason why the variation in the standardized output is smaller than before is that the distance of the conductive film 9 to the substrate 1 on which the MR element film 10 is not provided can be determined with great precision. This is because the distance is determined by the thickness of the insulating film 2, and the insulating film 2 is formed using a thin film forming technique such as sputtering. This is because it is formed with an accuracy of Olum-0,005 μm. This is 10 to 20 times better than the accuracy of the film thickness of the adhesive 8.
以上の様に本実施例によれば導電膜9の接着剤8を設け
られる側にMR素子膜10を形成したので、接着剤8の
膜厚の変化による再生出力の変化を従来よりは緩やかに
し、接着剤8の膜厚誤差による再生出力のばらつきを大
幅に改善できる。As described above, according to this embodiment, since the MR element film 10 is formed on the side of the conductive film 9 on which the adhesive 8 is provided, changes in reproduction output due to changes in the film thickness of the adhesive 8 are made more gradual than in the past. , variations in reproduction output due to film thickness errors of the adhesive 8 can be significantly improved.
発明の効果
本発明は、基板上に絶縁膜を
設け、その上に導電膜、磁気抵抗効果素子膜を順に設け
た事により、基板と導電膜の間には絶縁膜しかなく、そ
の絶縁膜の膜厚を精度良(する事ができ、接着剤の膜厚
の厚薄によって生じる漏洩磁束の度合を軽減する事がで
きるので、おのおののヘッドにおける再生出力の差を従
来よりもかなり小さくする事ができ、磁気特性の歩留り
を小さくする事ができる。Effects of the Invention In the present invention, an insulating film is provided on a substrate, and a conductive film and a magnetoresistive element film are sequentially provided on the insulating film, so that there is only an insulating film between the substrate and the conductive film, and the insulating film is Since the film thickness can be adjusted with high precision and the degree of leakage magnetic flux caused by the thickness of the adhesive film can be reduced, the difference in reproduction output between each head can be made much smaller than before. , the yield of magnetic properties can be reduced.
第1図は本発明の一実施例における磁気抵抗効果型ヘッ
ドを示す斜視図、第2図は同側断面図、第3図は本実施
例の接着剤の膜厚と標準化出力及び2次高調波歪の関係
を示すグラフ、第4図は従来の磁気抵抗効果型ヘッドを
示す斜視図、第5図は同側断面図、第6図は接着剤の膜
厚と標準化出力及び2次高調波歪の関係を示すグラフで
ある。
1・・・・・・基板
2・・・・・・絶縁膜
5・・・・・・リード
6・・・・・・絶縁膜
7・・・・・・磁性カバー材
8・・・・・・接着剤
9・・・・・・導電膜
10・・・・・・MR素子膜
代理人の氏名 弁理士 粟野重孝 ばか1名1:基板
2:絶縁膜
5:リード
6:絶縁膜
第
図
7:磁性カバー材
8:接着剤
9:導電膜
10:MR素子膜
Fl(pm)
第
1:基板
2:絶縁膜
3:磁気抵抗効果型素子膜
4:導電膜
5図
5:リード
6:絶縁膜
7:磁性カバ
8:接着剤
材
Gl(μm)FIG. 1 is a perspective view showing a magnetoresistive head according to an embodiment of the present invention, FIG. 2 is a sectional view of the same side, and FIG. 3 is a diagram showing the adhesive film thickness, standardized output, and secondary harmonics of this embodiment. A graph showing the relationship between wave distortion, Figure 4 is a perspective view of a conventional magnetoresistive head, Figure 5 is a sectional view of the same side, and Figure 6 is adhesive film thickness, standardized output, and second harmonics. It is a graph showing the relationship between distortions. 1...Substrate 2...Insulating film 5...Lead 6...Insulating film 7...Magnetic cover material 8...・Adhesive 9... Conductive film 10... Name of MR element film agent Patent attorney Shigetaka Awano 1 idiot 1: Substrate 2: Insulating film 5: Lead 6: Insulating film Figure 7 : Magnetic cover material 8: Adhesive 9: Conductive film 10: MR element film Fl (pm) 1st: Substrate 2: Insulating film 3: Magnetoresistive element film 4: Conductive film 5 Figure 5: Lead 6: Insulating film 7: Magnetic cover 8: Adhesive material Gl (μm)
Claims (1)
もに前記導電膜の上に磁気抵抗効果素子膜を設け、前記
磁気抵抗効果素子膜を覆う様に更に絶縁膜を形成し、前
記絶縁膜の上に磁性カバーを接着した事を特徴とする磁
気抵抗効果型ヘッド。An insulating film is provided on a magnetic substrate, a conductive film is provided thereon, a magnetoresistive element film is provided on the conductive film, an insulating film is further formed to cover the magnetoresistive element film, and the insulating film A magnetoresistive head characterized by having a magnetic cover glued on top of the head.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP724689A JPH02187911A (en) | 1989-01-13 | 1989-01-13 | Magneto-resistance effect type head |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP724689A JPH02187911A (en) | 1989-01-13 | 1989-01-13 | Magneto-resistance effect type head |
Publications (1)
Publication Number | Publication Date |
---|---|
JPH02187911A true JPH02187911A (en) | 1990-07-24 |
Family
ID=11660660
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP724689A Pending JPH02187911A (en) | 1989-01-13 | 1989-01-13 | Magneto-resistance effect type head |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPH02187911A (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5798895A (en) * | 1994-02-28 | 1998-08-25 | Commissariat A L'energie Atomique | Magnetic reading head having a magnetoresistant element and improved polarization means |
-
1989
- 1989-01-13 JP JP724689A patent/JPH02187911A/en active Pending
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5798895A (en) * | 1994-02-28 | 1998-08-25 | Commissariat A L'energie Atomique | Magnetic reading head having a magnetoresistant element and improved polarization means |
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