JPH02183496A - Nonvolatile semiconductor memory - Google Patents

Nonvolatile semiconductor memory

Info

Publication number
JPH02183496A
JPH02183496A JP162189A JP162189A JPH02183496A JP H02183496 A JPH02183496 A JP H02183496A JP 162189 A JP162189 A JP 162189A JP 162189 A JP162189 A JP 162189A JP H02183496 A JPH02183496 A JP H02183496A
Authority
JP
Grant status
Application
Patent type
Prior art keywords
voltage
potential
vpp
eprom
program voltage
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP162189A
Inventor
Kenji Koda
Yasuhiro Korogi
Hiroyasu Makihara
Takeshi Toyama
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date

Links

Classifications

    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11CSTATIC STORES
    • G11C16/00Erasable programmable read-only memories
    • G11C16/02Erasable programmable read-only memories electrically programmable
    • G11C16/06Auxiliary circuits, e.g. for writing into memory
    • G11C16/22Safety or protection circuits preventing unauthorised or accidental access to memory cells
    • G11C16/225Preventing erasure, programming or reading when power supply voltages are outside the required ranges
    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11CSTATIC STORES
    • G11C16/00Erasable programmable read-only memories
    • G11C16/02Erasable programmable read-only memories electrically programmable
    • G11C16/06Auxiliary circuits, e.g. for writing into memory
    • G11C16/30Power supply circuits

Abstract

PURPOSE: To prevent element destruction caused by excessive program voltage by providing a program voltage lowering circuit to lower the program voltage to voltage lower than a prescribed potential when the program voltage is higher than the prescribed potential.
CONSTITUTION: When program voltage VPP of an EPROM becomes 21V because of erroneous setting though the voltage VPP is 12.5V, the output voltage of a program voltage detection circuit 3 becomes an H level. Since an n-channel transistor Tr 25 operates in response to the output signal of an inverter 21, in this case, the Tr 25 is turned on. As the result, even when the voltage VPP is 21V, since the potential is grounded by the Tr 25, the potential of a voltage VPP wiring is made into a ground potential. As the result, the ground potential is impressed to a VCC/VPP voltage switching circuit 15 and a memory cell selecting peripheral circuit 5, and the excessive voltage is never impressed to the respective circuits of the EPROM. Consequently, it can be prevented that the EPROM is join-destroyed caused by the impressing of the excessive voltage to the EPROM.
COPYRIGHT: (C)1990,JPO&Japio
JP162189A 1989-01-07 1989-01-07 Nonvolatile semiconductor memory Pending JPH02183496A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP162189A JPH02183496A (en) 1989-01-07 1989-01-07 Nonvolatile semiconductor memory

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP162189A JPH02183496A (en) 1989-01-07 1989-01-07 Nonvolatile semiconductor memory
KR890017969A KR930001653B1 (en) 1989-01-07 1989-12-05 Nonvolatile semiconductor memory device
DE19904000219 DE4000219A1 (en) 1989-01-07 1990-01-05 Semiconductor memory with externally applied programming voltage - has programming voltage detector determining its level w.r.t. preset one

Publications (1)

Publication Number Publication Date
JPH02183496A true true JPH02183496A (en) 1990-07-18

Family

ID=11506601

Family Applications (1)

Application Number Title Priority Date Filing Date
JP162189A Pending JPH02183496A (en) 1989-01-07 1989-01-07 Nonvolatile semiconductor memory

Country Status (3)

Country Link
JP (1) JPH02183496A (en)
KR (1) KR930001653B1 (en)
DE (1) DE4000219A1 (en)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5943263A (en) * 1997-01-08 1999-08-24 Micron Technology, Inc. Apparatus and method for programming voltage protection in a non-volatile memory system
DE10160614B4 (en) * 2001-12-11 2008-04-30 Infineon Technologies Ag Semiconductor integrated circuit chips and their use

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4581672A (en) * 1983-08-31 1986-04-08 National Semiconductor Corporation Internal high voltage (Vpp) regulator for integrated circuits
JPS6180597A (en) * 1984-09-26 1986-04-24 Hitachi Ltd Semiconductor memory device

Also Published As

Publication number Publication date Type
KR930001653B1 (en) 1993-03-08 grant
DE4000219A1 (en) 1990-07-12 application

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