JPS6180597A - Semiconductor memory device - Google Patents

Semiconductor memory device

Info

Publication number
JPS6180597A
JPS6180597A JP19957684A JP19957684A JPS6180597A JP S6180597 A JPS6180597 A JP S6180597A JP 19957684 A JP19957684 A JP 19957684A JP 19957684 A JP19957684 A JP 19957684A JP S6180597 A JPS6180597 A JP S6180597A
Authority
JP
Japan
Prior art keywords
writing
etc
fetched
eprom
respectively
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP19957684A
Inventor
Toshimasa Kihara
Fumio Tsuchiya
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP19957684A priority Critical patent/JPS6180597A/en
Publication of JPS6180597A publication Critical patent/JPS6180597A/en
Priority claimed from US07/637,798 external-priority patent/US5136546A/en
Application status is Pending legal-status Critical

Links

Classifications

    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11CSTATIC STORES
    • G11C16/00Erasable programmable read-only memories
    • G11C16/02Erasable programmable read-only memories electrically programmable
    • G11C16/06Auxiliary circuits, e.g. for writing into memory
    • G11C16/10Programming or data input circuits
    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11CSTATIC STORES
    • G11C2216/00Indexing scheme relating to G11C16/00 and subgroups, for features not directly covered by these groups
    • G11C2216/12Reading and writing aspects of erasable programmable read-only memories
    • G11C2216/14Circuits or methods to write a page or sector of information simultaneously into a nonvolatile memory, typically a complete row or word line in flash memory

Abstract

PURPOSE: To write EPROM, etc., at high speed by supplying a memory array corresponding to a timing after a writing signal is fetched into plural writing circuits respectively which are connected to one external terminal.
CONSTITUTION: Writing data from a data input/output terminal DO, etc., are fetched into a holding circuit which is supplied to two pairs, etc., plural writing circuits W0A and W0B and controlled by a control circuit a0 and inversion a0 from a control circuit CONT respectively. These fetched data are supplied to memory arrays M0A and M0B of EPROM corresponding to circuits W0A and W0B respectively and written in parallel. The same is obtained even for memory arrays M1A and M1B, and M2A and M2B..., and compared with the case when the writing circuit is installed to an external terminal each, the writing is executed at the speed of two times as much as the case, and the high speed writing of EPROM, etc., can be executed.
COPYRIGHT: (C)1986,JPO&Japio
JP19957684A 1984-09-26 1984-09-26 Semiconductor memory device Pending JPS6180597A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP19957684A JPS6180597A (en) 1984-09-26 1984-09-26 Semiconductor memory device

Applications Claiming Priority (6)

Application Number Priority Date Filing Date Title
JP19957684A JPS6180597A (en) 1984-09-26 1984-09-26 Semiconductor memory device
US06/770,576 US4691298A (en) 1984-09-26 1985-08-29 Semiconductor memory
US07/075,986 US4788665A (en) 1984-09-26 1987-07-21 Semiconductor memory
US07/277,131 US4905195A (en) 1984-09-26 1988-11-29 Semiconductor memory
US07/480,009 US4984212A (en) 1984-09-26 1990-02-14 Semiconductor memory
US07/637,798 US5136546A (en) 1984-09-26 1991-01-07 Semiconductor memory

Publications (1)

Publication Number Publication Date
JPS6180597A true JPS6180597A (en) 1986-04-24

Family

ID=16410129

Family Applications (1)

Application Number Title Priority Date Filing Date
JP19957684A Pending JPS6180597A (en) 1984-09-26 1984-09-26 Semiconductor memory device

Country Status (2)

Country Link
US (4) US4691298A (en)
JP (1) JPS6180597A (en)

Families Citing this family (60)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6180597A (en) * 1984-09-26 1986-04-24 Hitachi Ltd Semiconductor memory device
US5136546A (en) * 1984-09-26 1992-08-04 Hitachi, Ltd. Semiconductor memory
JPH0522997B2 (en) * 1986-03-31 1993-03-31 Tokyo Shibaura Electric Co
US4821226A (en) * 1987-01-30 1989-04-11 Rca Licensing Corporation Dual port video memory system having a bit-serial address input port
JPS63200391A (en) * 1987-02-16 1988-08-18 Toshiba Corp Static type semiconductor memory
US5172335A (en) * 1987-02-23 1992-12-15 Hitachi, Ltd. Semiconductor memory with divided bit load and data bus lines
US4935901A (en) * 1987-02-23 1990-06-19 Hitachi, Ltd. Semiconductor memory with divided bit load and data bus lines
US4931999A (en) * 1987-07-27 1990-06-05 Mitsubishi Denki Kabushiki Kaisha Access circuit for a semiconductor memory
US4975880A (en) * 1988-05-02 1990-12-04 Tektronix, Inc. Memory system for storing data from variable numbers of input data streams
US5315547A (en) * 1988-07-11 1994-05-24 Hitachi, Ltd. Nonvolatile semiconductor memory device with selective tow erasure
US4939692A (en) * 1988-09-15 1990-07-03 Intel Corporation Read-only memory for microprocessor systems having shared address/data lines
JP2648840B2 (en) * 1988-11-22 1997-09-03 日立超エル・エス・アイエンジニアリング株式会社 A semiconductor memory device
JP2698834B2 (en) * 1988-11-22 1998-01-19 日立超エル・エス・アイエンジニアリング株式会社 Non-volatile storage device
US5341329A (en) * 1988-12-28 1994-08-23 Kabushiki Kaisha Toshiba Nonvolatile semiconductor memory device capable of preventing read error caused by overerase state and method therefor
JP2507576B2 (en) * 1988-12-28 1996-06-12 株式会社東芝 Semiconductor non-volatile memory
JPH02183496A (en) * 1989-01-07 1990-07-18 Mitsubishi Electric Corp Nonvolatile semiconductor memory
DE69033438D1 (en) * 1989-04-13 2000-03-02 Sandisk Corp Replacement of faulty memory cells of a EEprommatritze
US5172338B1 (en) * 1989-04-13 1997-07-08 Sandisk Corp Multi-state eeprom read and write circuits and techniques
JPH0814985B2 (en) * 1989-06-06 1996-02-14 富士通株式会社 A semiconductor memory device
US5150330A (en) * 1990-01-24 1992-09-22 Vlsi Technology, Inc. Interblock dispersed-word memory architecture
US5077692A (en) * 1990-03-05 1991-12-31 Advanced Micro Devices, Inc. Information storage device with batch select capability
JPH0430388A (en) * 1990-05-25 1992-02-03 Oki Electric Ind Co Ltd Semiconductor memory device
JP2900523B2 (en) * 1990-05-31 1999-06-02 日本電気株式会社 Write circuit of the nonvolatile semiconductor memory device
JP2709751B2 (en) * 1990-06-15 1998-02-04 三菱電機株式会社 Nonvolatile semiconductor memory device and method data erasure
JP2519585B2 (en) * 1990-07-03 1996-07-31 三菱電機株式会社 Nonvolatile semiconductor memory device
JPH04141759A (en) * 1990-10-03 1992-05-15 Mitsubishi Electric Corp Three-state bidirectional buffer and portable semiconductor memory device using the same
US5295255A (en) * 1991-02-22 1994-03-15 Electronic Professional Services, Inc. Method and apparatus for programming a solid state processor with overleaved array memory modules
DE4114744C1 (en) * 1991-05-06 1992-05-27 Siemens Ag, 8000 Muenchen, De
JP2829156B2 (en) * 1991-07-25 1998-11-25 株式会社東芝 Redundancy circuit of the nonvolatile semiconductor memory device
US5361227A (en) * 1991-12-19 1994-11-01 Kabushiki Kaisha Toshiba Non-volatile semiconductor memory device and memory system using the same
US5291444A (en) * 1991-12-23 1994-03-01 Texas Instruments Incorporated Combination DRAM and SRAM memory array
JP3594626B2 (en) * 1993-03-04 2004-12-02 株式会社ルネサステクノロジ Non-volatile memory device
KR960001859B1 (en) * 1993-04-16 1996-02-06 김광호 Decoding circuit and the decoding method of semiconductor
JPH06333393A (en) * 1993-05-12 1994-12-02 Samsung Electron Co Ltd High reliability data output circuit and semiconductor integrated circuit using data output method
US5845313A (en) 1995-07-31 1998-12-01 Lexar Direct logical block addressing flash memory mass storage architecture
US6728851B1 (en) 1995-07-31 2004-04-27 Lexar Media, Inc. Increasing the memory performance of flash memory devices by writing sectors simultaneously to multiple flash memory devices
US6978342B1 (en) 1995-07-31 2005-12-20 Lexar Media, Inc. Moving sectors within a block of information in a flash memory mass storage architecture
US7167944B1 (en) 2000-07-21 2007-01-23 Lexar Media, Inc. Block management for mass storage
US8171203B2 (en) 1995-07-31 2012-05-01 Micron Technology, Inc. Faster write operations to nonvolatile memory using FSInfo sector manipulation
JP3481817B2 (en) * 1997-04-07 2003-12-22 株式会社東芝 A semiconductor memory device
JPH1196776A (en) * 1997-09-18 1999-04-09 Sanyo Electric Co Ltd Non-volatile semiconductor memory
US7102671B1 (en) 2000-02-08 2006-09-05 Lexar Media, Inc. Enhanced compact flash memory card
AU8673101A (en) 2000-08-25 2002-03-04 Kensey Nash Corp Covered stents, systems for deploying covered stents and methods of deploying covered stents
US7100107B2 (en) * 2001-05-30 2006-08-29 International Business Machines Corporation Method of changing service attributes in a service logic execution environment
GB0123417D0 (en) 2001-09-28 2001-11-21 Memquest Ltd Improved data processing
GB0123421D0 (en) 2001-09-28 2001-11-21 Memquest Ltd Power management system
GB0123415D0 (en) 2001-09-28 2001-11-21 Memquest Ltd Method of writing data to non-volatile memory
GB0123419D0 (en) 2001-09-28 2001-11-21 Memquest Ltd Data handling system
GB0123416D0 (en) 2001-09-28 2001-11-21 Memquest Ltd Non-volatile memory control
GB0123410D0 (en) 2001-09-28 2001-11-21 Memquest Ltd Memory system for data storage and retrieval
US6957295B1 (en) 2002-01-18 2005-10-18 Lexar Media, Inc. File management of one-time-programmable nonvolatile memory devices
US6950918B1 (en) 2002-01-18 2005-09-27 Lexar Media, Inc. File management of one-time-programmable nonvolatile memory devices
US7231643B1 (en) 2002-02-22 2007-06-12 Lexar Media, Inc. Image rescue system including direct communication between an application program and a device driver
US6973519B1 (en) 2003-06-03 2005-12-06 Lexar Media, Inc. Card identification compatibility
JP2007515024A (en) 2003-12-17 2007-06-07 レクサー メディア, インコーポレイテッド Activation in the point of sale of an electronic device to avoid theft
KR100536613B1 (en) * 2004-04-09 2005-12-14 삼성전자주식회사 Nor type flash memory device being capable of reducing program time and its program method
US7725628B1 (en) 2004-04-20 2010-05-25 Lexar Media, Inc. Direct secondary device interface by a host
US7370166B1 (en) 2004-04-30 2008-05-06 Lexar Media, Inc. Secure portable storage device
US7464306B1 (en) 2004-08-27 2008-12-09 Lexar Media, Inc. Status of overall health of nonvolatile memory
US7594063B1 (en) 2004-08-27 2009-09-22 Lexar Media, Inc. Storage capacity status

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS52130536A (en) * 1976-04-26 1977-11-01 Toshiba Corp Semiconductor memory unit
DE2828855C2 (en) * 1978-06-30 1982-11-18 Siemens Ag, 1000 Berlin Und 8000 Muenchen, De
JPS55129996A (en) * 1979-03-23 1980-10-08 Fujitsu Ltd Write system of read-only memory
JPS5651093A (en) * 1979-09-28 1981-05-08 Nec Corp Semiconductor storage device
JPS56134390A (en) * 1980-03-21 1981-10-21 Fujitsu Ltd Rom element
JPS6014440B2 (en) * 1980-10-15 1985-04-13 Tokyo Shibaura Electric Co
JPS628876B2 (en) * 1980-10-15 1987-02-25 Tokyo Shibaura Electric Co
JPS628877B2 (en) * 1980-10-15 1987-02-25 Tokyo Shibaura Electric Co
JPS5856285A (en) * 1981-09-29 1983-04-02 Fujitsu Ltd Semiconductor storage device
JPS6180597A (en) * 1984-09-26 1986-04-24 Hitachi Ltd Semiconductor memory device

Also Published As

Publication number Publication date
US4905195A (en) 1990-02-27
US4691298A (en) 1987-09-01
US4984212A (en) 1991-01-08
US4788665A (en) 1988-11-29

Similar Documents

Publication Publication Date Title
JPS59180871A (en) Semiconductor memory device
JPH01154391A (en) Memory cell circuit
JPS54152931A (en) Semiconductor memory device
JPS62135949A (en) High speed memory device
JPH02226811A (en) Programmable logic device
JPS60177498A (en) Semiconductor storage device
JPH03156791A (en) Semiconductor memory
JPS6211977A (en) Picture memory
JPS5634186A (en) Bipolar memory circuit
JPH04274097A (en) Semiconductor memory having inversion write-back capability and test method for memory using inversion write-back capability
JPS5760586A (en) Random access memory
JPS62103893A (en) Semiconductor memory
JPS55141823A (en) Data read-out circuit
JPS61145799A (en) Semiconductor integrated circuit incorporating memory
JPS54139344A (en) Clock-system static memory
JPS6374200A (en) Semiconductor memory device
JPH0358399A (en) Semiconductor memory
JPS59213084A (en) Buffer store control system
JPS5998365A (en) Plural simultaneous access type storage device
JPS6356754A (en) Input/output channel
GB1519985A (en) Computer momories
JPS621200A (en) Semiconductor memory
JPS61253695A (en) Semiconductor memory device
JPS63239675A (en) Semiconductor storage device
JPS61267148A (en) Memory circuit