JPH02181399A - Synchrotron device - Google Patents
Synchrotron deviceInfo
- Publication number
- JPH02181399A JPH02181399A JP64000534A JP53489A JPH02181399A JP H02181399 A JPH02181399 A JP H02181399A JP 64000534 A JP64000534 A JP 64000534A JP 53489 A JP53489 A JP 53489A JP H02181399 A JPH02181399 A JP H02181399A
- Authority
- JP
- Japan
- Prior art keywords
- pattern
- electromagnet
- steering electromagnet
- pattern memory
- steering
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000012937 correction Methods 0.000 abstract description 2
- 230000005284 excitation Effects 0.000 description 6
- 238000010586 diagram Methods 0.000 description 3
- 238000000034 method Methods 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- 230000001133 acceleration Effects 0.000 description 2
- 238000005452 bending Methods 0.000 description 2
- 238000002347 injection Methods 0.000 description 2
- 239000007924 injection Substances 0.000 description 2
- 239000003795 chemical substances by application Substances 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000006870 function Effects 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70008—Production of exposure light, i.e. light sources
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
- Particle Accelerators (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
Abstract
Description
【発明の詳細な説明】
〔発明の目的〕
(産業上の利用分野)
本発明は半導体露光や医療用に用いられるシンクロトロ
ン装置に関する。DETAILED DESCRIPTION OF THE INVENTION [Object of the Invention] (Field of Industrial Application) The present invention relates to a synchrotron device used for semiconductor exposure and medical purposes.
(従来の技術)
半導体露光や医療用に用いられるシンクロトロン装置は
一般的に第3図に示すような機器で構成されている。す
なわち、ビームを偏向するための偏向電磁石6.ビーム
の発散を防ぎビームをあるサイズにまとめるための四極
電磁石7、ビームを加速するための高周波加速室JIM
8.ビームをまねずために必要な真空を提供するビーム
ダク1−〇、ビームを入射、または出射するための入・
出射機器10、ビームをまわす効率を向上させるための
ステアリング電磁石11.である。(Prior Art) A synchrotron device used for semiconductor exposure or medical purposes is generally composed of equipment as shown in FIG. namely, a deflection electromagnet for deflecting the beam; 6. Quadrupole electromagnet 7 for preventing beam divergence and consolidating the beam into a certain size, high frequency acceleration chamber JIM for accelerating the beam
8. Beam duct 1-0 provides the necessary vacuum to avoid beam radiation;
Exit device 10, steering electromagnet 11 for improving beam turning efficiency. It is.
従来技術によると、ステアリング電磁石11の迅転方法
は偏向電磁石6のパターン運転とは異なり、一定値の定
常運転を行っていた。これは、従来のシンクロトロン装
置ではビーム入射の際にビームが失なわれることが多く
、入射時に限りビーム軌道のずれを補正しようというも
のであった。According to the prior art, the method of rapid rotation of the steering electromagnet 11 is different from the pattern operation of the bending electromagnet 6, and a steady operation with a constant value is performed. This is because in conventional synchrotron devices, beams are often lost during beam injection, and the idea was to correct deviations in the beam trajectory only at the time of beam injection.
(発明が解決しようとする課題)
上記従来技術によると、入射直前のビーム゛耐流値が、
出射後には、わずか10%程度になってしまい、いかに
も効率の悪いものであった。(Problem to be Solved by the Invention) According to the above-mentioned conventional technology, the current value of the beam immediately before incidence is
After the emission, the efficiency was only about 10%, which was quite inefficient.
近年、シンクロトロン装置が、半導体露光や医療用に用
いられるようになってきて、上記の様に10%のように
効率の悪いシンクロトロン装置では非常に問題であるこ
とがいわれている。In recent years, synchrotron devices have come to be used for semiconductor exposure and medical purposes, and it is said that synchrotron devices with efficiency as low as 10% as described above are extremely problematic.
そこで本発明におけるシンクロトロン装置では、ビーム
の入射〜出射に至る過程においてビーム効率を向上させ
ることを目的とする。Therefore, in the synchrotron device according to the present invention, it is an object of the present invention to improve beam efficiency in the process from beam input to beam output.
(課題を解決するための手段)
本発明のシンクロトロン装置においては、ステアリング
電磁石をパターン励磁する構成とする。(Means for Solving the Problems) In the synchrotron device of the present invention, the steering electromagnet is pattern-excited.
(作 用)
ステアリング電磁石をパターン励磁することにより、シ
ンクロトロン装置の入射時のビーム軌道の補正のみなら
ず、加速中出射時に適合した補正をとれることになる。(Function) By pattern-exciting the steering electromagnet, it is possible not only to correct the beam trajectory when it enters the synchrotron device, but also to make corrections that are suitable for when it is exiting during acceleration.
(実施例) 以下1図面を参照して実施例の説明を行なう。(Example) An embodiment will be described below with reference to one drawing.
第1図は本発明の一実施例を示すもので、ステアリング
電磁石11、開用励磁電源4.パターンをタイミングに
従って送り出すためのパターンメモリ2、パターンメモ
リにパターンを書き込むための計算機1、パターンメモ
リに指令値更新信号を送り出すタイマー3とで構成され
る。FIG. 1 shows an embodiment of the present invention, in which a steering electromagnet 11, an open excitation power source 4. It is composed of a pattern memory 2 for sending out a pattern according to timing, a computer 1 for writing the pattern into the pattern memory, and a timer 3 for sending out a command value update signal to the pattern memory.
計算機1よりパターンメモリ2に入射から出射に至るま
でのビーム軌道補正用のパターンが書き込まれる。パタ
ーンメモリ2は書き込まれたパターンをタイマー3から
くる信号に従って、ステアリング電磁石励磁電源4に送
信する。ステアリング電磁石励磁電源4は送られてきた
パターンに従ってステアリング電磁石11を第2図に示
す様に偏向電磁石の励磁パターンと同期をとりながら励
磁することになる。A pattern for correcting the beam trajectory from incidence to exit is written into pattern memory 2 by computer 1. The pattern memory 2 transmits the written pattern to the steering electromagnet excitation power source 4 in accordance with the signal coming from the timer 3. The steering electromagnet excitation power source 4 excites the steering electromagnet 11 in accordance with the sent pattern in synchronization with the excitation pattern of the bending electromagnet, as shown in FIG.
」二記の様に、本実施例の構成とすることによりシンク
ロトロン装置のビームの入射から出射に至るまでの間、
ビーム軌道を補正できるのでシンクロトロン装置のビー
ム効率が飛躍的に向上する。2, the configuration of this embodiment allows for
Since the beam trajectory can be corrected, the beam efficiency of the synchrotron device can be dramatically improved.
以上述べたように、本発明のシンクロトロン装置におけ
るステアリング電磁石の励磁方式を用いることにより従
来方式では非常に悪かったビーム効率を飛躍的に向上さ
せることが出来る。As described above, by using the excitation method of the steering electromagnet in the synchrotron device of the present invention, the beam efficiency, which was extremely poor in the conventional method, can be dramatically improved.
第1図は本発明の一実施例を示す図、第2図は本発明の
作用を示す図、第3図は一般的なシンクロトロン装置を
示す図である。
1・・・計算機 2・・・パターンメモリ3
・・・タイマー
4・・・ステアリング電磁石励磁電源
+1
各・・・ステアリング電磁石
代理人 弁理士 則 近 憲 佑
同 第子丸 健
第1図
時間
第2図FIG. 1 is a diagram showing an embodiment of the present invention, FIG. 2 is a diagram showing the operation of the present invention, and FIG. 3 is a diagram showing a general synchrotron device. 1...Calculator 2...Pattern memory 3
...Timer 4...Steering electromagnet excitation power supply +1 Each...Steering electromagnet agent Patent attorney Noriyuki Chika Ken Yudo Daishimaru Ken Fig. 1 Time Fig. 2
Claims (1)
リング電磁石を偏向磁石あるいは四極電磁石と同じよう
にプレプログラム化されたパターンによって励磁するよ
うにしたことを特徴とするシンクロトロン装置。A synchrotron device for a beam accelerator, characterized in that a steering electromagnet is excited by a preprogrammed pattern in the same way as a deflection magnet or a quadrupole electromagnet.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP64000534A JPH02181399A (en) | 1989-01-06 | 1989-01-06 | Synchrotron device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP64000534A JPH02181399A (en) | 1989-01-06 | 1989-01-06 | Synchrotron device |
Publications (1)
Publication Number | Publication Date |
---|---|
JPH02181399A true JPH02181399A (en) | 1990-07-16 |
Family
ID=11476427
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP64000534A Pending JPH02181399A (en) | 1989-01-06 | 1989-01-06 | Synchrotron device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPH02181399A (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2012117563A1 (en) * | 2011-03-03 | 2012-09-07 | 株式会社日立製作所 | Synchrotron magnet power supply control system and control method, and synchrotron |
-
1989
- 1989-01-06 JP JP64000534A patent/JPH02181399A/en active Pending
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2012117563A1 (en) * | 2011-03-03 | 2012-09-07 | 株式会社日立製作所 | Synchrotron magnet power supply control system and control method, and synchrotron |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP5766304B2 (en) | Charged particle accelerator and particle beam therapy system | |
JP2009117111A (en) | Control device of particle accelerator | |
US6661016B2 (en) | Ion implantation uniformity correction using beam current control | |
JPH02181399A (en) | Synchrotron device | |
JPH0691005B2 (en) | Charged beam drawing method | |
CN108883304B (en) | Synchrotron control method, synchrotron control device and storage medium | |
JP2538899B2 (en) | Charged beam drawing method and drawing apparatus | |
JP2017112021A (en) | Control device for accelerator, control method for accelerator and particle beam therapy apparatus | |
JPS63314799A (en) | Accelerator operating method | |
US20240324092A1 (en) | Particle beam irradiation system and particle beam irradiation method | |
JPS5922325A (en) | Electron beam drawing device | |
US20200396824A1 (en) | Control method for accelerator, control device for accelerator, and particle-beam radiation treatment system | |
JP2799066B2 (en) | Accelerator | |
JP2006228579A (en) | Accelerator system and its operation method | |
JPH03236862A (en) | Medical electron accelerating device | |
JPH0935899A (en) | Take-out method for charged particle beam | |
JPH11337699A (en) | Injector with high frequency acceleration tube and high frequency large current ion implantation device thereof | |
JPH04330713A (en) | Method and apparatus for control of charged particle beam in charged particle beam aligner | |
JPH02281613A (en) | Pattern aligner | |
JPH01187751A (en) | Beam changeover method for beam accelerator | |
JPS63307700A (en) | Beam closed orbit correcting device | |
JPS57162332A (en) | Exposing method for electron beam | |
JPH09148264A (en) | Ion implanter | |
JPS62149126A (en) | Method for charged beam exposure | |
JPH11260692A (en) | Electron beam drawer |