JPH02179869A - Sputtering device - Google Patents

Sputtering device

Info

Publication number
JPH02179869A
JPH02179869A JP33253388A JP33253388A JPH02179869A JP H02179869 A JPH02179869 A JP H02179869A JP 33253388 A JP33253388 A JP 33253388A JP 33253388 A JP33253388 A JP 33253388A JP H02179869 A JPH02179869 A JP H02179869A
Authority
JP
Japan
Prior art keywords
target
sputter
block
sputtering
etching
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP33253388A
Other languages
Japanese (ja)
Other versions
JP2734588B2 (en
Inventor
Yoshihiro Kakimoto
柿本　義裕
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp filed Critical NEC Corp
Priority to JP63332533A priority Critical patent/JP2734588B2/en
Publication of JPH02179869A publication Critical patent/JPH02179869A/en
Application granted granted Critical
Publication of JP2734588B2 publication Critical patent/JP2734588B2/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Landscapes

  • Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
  • Physical Vapour Deposition (AREA)
  • Electrodes Of Semiconductors (AREA)

Abstract

PURPOSE:To accurately detect consumption of a target and to previously prevent sputter-etching trouble of the backing plate of the target by providing a mechanism for measuring the change in weight of the target to this sputter-etched target. CONSTITUTION:In a sputtering device for sputter-etching a target 1 in a vacuum chamber, a backing plate 2 with the target 1 bonded thereto is fixed to a block 3 for holding the target. Furthermore this block 3 is fixed to a vacuum wall 9 via the supporters 4 for holding the target. Further both a cable 8 for impressing high voltage to the target 1 and a cooling water pipeline 7 are introduced into the block 3 via a bellows 5. Therein a strain gauges 6 are provided to the supportors 4 and each load of the target 1, the rear plate 2 and the block 3 is measured. Thereby the change in weight of the target 1 resulting from etching is monitored and consumption thereof is accurately judged and the rear plate 2 is prevented from being sputter-etched by excess sputtering.

Description

【発明の詳細な説明】 〔産業上の利用分野〕 本発明は半導体製造プロセス中の一工程であるスバツタ
工程で使用されるスパッタ装置に関するものである。DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to a sputtering apparatus used in a sputtering process, which is one step in a semiconductor manufacturing process.

〔従来の技術〕[Conventional technology]

従来、この種のスパッタ装置は第３図に示すように、タ
ーゲット裏板２にボンディングされたターゲット１を、
ターゲット冷却水配管７を内部に持つターゲット保持ブ
ロック３に図示しないネジにより固定する構造となって
いた。８は高圧印加ケーブル、９は真空壁である。Conventionally, this type of sputtering apparatus has a target 1 bonded to a target back plate 2, as shown in FIG.
It had a structure in which it was fixed to a target holding block 3 having a target cooling water pipe 7 therein with screws (not shown). 8 is a high voltage application cable, and 9 is a vacuum wall.

〔発明が解決しようとする課題〕[Problem to be solved by the invention]

スパッタ装置におけるターゲットはスパッタエッチによ
り消費し、次第に薄くなる。そして、ターゲットが全面
又は一部なくなった際にスパッタ作業を行うと、ターゲ
ットを貼り付けている裏板材料がスパッタエッチされ、
被スパツタ材料に含有し、スパッタ膜の組成上のトラブ
ルを発生する。The target in the sputtering device is consumed by sputter etching and becomes gradually thinner. If sputtering is performed when the target is completely or partially gone, the back plate material to which the target is attached will be sputter-etched.
It is contained in the material to be sputtered and causes problems in the composition of the sputtered film.

そこで、従来のスパッタ装置ではターゲットの消費状況
をターゲット残り厚さを実際に目視測定する方法、又は
スパッタ回数や、ターゲットに印加する電力量の積算値
にてターゲット消費量を推定する方法が行われていた。Therefore, in conventional sputtering equipment, target consumption is estimated by actually visually measuring the remaining thickness of the target, or by calculating the number of sputters or the integrated value of the amount of power applied to the target. was.

しかし、ロードロック方式のスパッタ装置においては、
ターゲットを目視測定するには真空スパッタ室を大気開
放しなければならず、本来のロードロック方式の利点で
ある反応室の雰囲気維持、真空排気時間の短縮又は削除
が失われるだけなく、随時ターゲット消費量を確認でき
ないという欠点がある。また、スパッタ回数測定法では
ターゲットに印加する電力量やスパッタ時間を変化させ
る場合には、ターゲット消費量の真値を推定することは
難しい。さらに、ターゲットに印加する積算電力量によ
る測定法では、瞬時におけるターゲット印加電力と、タ
ーゲット消費量、すなわち電力に対するターゲット消費
率が正比例関係にないこと、スパッタ圧力の変化や、温
度の変化により、ターゲット消費率が変化するため、タ
ーゲット消費量の推定値は必ずしも真値を示していない
。However, in load-lock type sputtering equipment,
To visually measure the target, the vacuum sputtering chamber must be opened to the atmosphere, which not only loses the advantage of the original load-lock method of maintaining the reaction chamber atmosphere and shortening or eliminating the evacuation time, but also reduces target consumption at any time. The disadvantage is that the amount cannot be confirmed. Furthermore, in the sputtering frequency measurement method, it is difficult to estimate the true value of target consumption when changing the amount of power applied to the target or the sputtering time. Furthermore, in the measurement method based on the integrated power applied to the target, the instantaneous power applied to the target and the target consumption, that is, the target consumption rate with respect to power, are not directly proportional to each other, and changes in sputtering pressure and temperature can cause Because the consumption rate changes, the estimated value of target consumption does not necessarily represent the true value.

以上述べたように、従来のターゲット消費量の測定は１
時間的廻しさ又は、測定値に信頼性がないという欠点が
あった。As mentioned above, the conventional measurement of target consumption is
The disadvantages were that the time was slow and the measured values were unreliable.

本発明の目的は前記課題を解決したスパッタ装置を提供
することにある。An object of the present invention is to provide a sputtering apparatus that solves the above problems.

〔発明の従来技術に対する相違点〕[Differences between the invention and the prior art]

上述した従来のスパッタ装置に対し、本発明はターゲッ
トの重量を測定する機能を持つという相違点を有する。The present invention differs from the conventional sputtering apparatus described above in that it has a function of measuring the weight of the target.

〔課題を解決するための手段〕[Means to solve the problem]

前記目的を達成するため、本発明はスパッタエツチング
するターゲットを備えたスパッタ装置において、ターゲ
ットの重量変化を測定する機構を有するものである。In order to achieve the above object, the present invention provides a sputtering apparatus equipped with a target for sputter etching, which has a mechanism for measuring changes in the weight of the target.

〔実施例〕〔Example〕

以下１本発明の実施例を図により説明する。 An embodiment of the present invention will be described below with reference to the drawings.

（実施例１） 第１図は本発明の実施例１を示す縦断面図である。(Example 1) FIG. 1 is a longitudinal sectional view showing a first embodiment of the present invention.

ターゲット１がボンディングされているターゲット裏板
２を図示しないネジによりターゲット保持ブロック３に
固定する。ターゲット保持ブロック３は真空壁９に、タ
ーゲット保持支柱４を介して固定する。ターゲット１へ
の高圧印加ケーブル８及び冷却水配管７はベローズ５を
介してターゲット保持ブロック３に導入される。ここで
、ターゲット１．ターゲット裏板２及びターゲット保持
ブロック３の重量はターゲット保持支柱４に荷重として
かかるため、この荷重を歪ゲージ６にて測定を行う。A target back plate 2 to which the target 1 is bonded is fixed to a target holding block 3 with screws (not shown). The target holding block 3 is fixed to the vacuum wall 9 via the target holding column 4. A high voltage application cable 8 and cooling water pipe 7 to the target 1 are introduced into the target holding block 3 via the bellows 5. Here, target 1. Since the weight of the target back plate 2 and the target holding block 3 is applied as a load to the target holding column 4, this load is measured by the strain gauge 6.

スパッタを行うことによってターゲット１の厚さが減少
するに伴い、ターゲット１の重量が軽くなると、この重
量変化を上述した歪ゲージ６の測定値によりモニターす
ることが可能となる。As the thickness of the target 1 decreases by performing sputtering, the weight of the target 1 becomes lighter, and this weight change can be monitored by the measurement value of the strain gauge 6 described above.

（実施例２） 第２図は本発明の実施例２を示す縦断面図である。(Example 2) FIG. 2 is a longitudinal sectional view showing a second embodiment of the present invention.

この実施例では、実施例１でのターゲット保持支柱を不
要とし、歪ゲージ６を真空壁９を貫通するターゲットブ
ロック３の支柱部に固定する。このことにより、実施例
１で述べたことと同様にターゲット１の消費（残量）が
モニターすることができるという利点がある。In this embodiment, the target holding column in the first embodiment is not required, and the strain gauge 6 is fixed to the column of the target block 3 that penetrates the vacuum wall 9. This has the advantage that the consumption (remaining amount) of the target 1 can be monitored in the same way as described in the first embodiment.

〔発明の効果〕〔Effect of the invention〕

以上説明したように本発明はターゲットの重量を直接測
定することにより、ターゲットの消費量（残量）が正確
に判断でき、超過スパッタによるターゲット裏板のスパ
ッタエッチトラブルを未然に防止することができる効果
がある。As explained above, the present invention can accurately determine the consumed amount (remaining amount) of the target by directly measuring the weight of the target, and can prevent sputter etch problems on the target back plate due to excessive sputtering. effective.

【図面の簡単な説明】[Brief explanation of the drawing]

第１図は本発明の実施例１を示す縦断面図、第２図は本
発明の実施例２を示す縦断面図、第３図は従来のスパッ
タ装置のターゲットユニットを示す縦断面図である。 １・・・ターゲット　　　　　　　　２・・・ターゲッ
ト裏板３・・・ターゲット保持ブロック　４・・・ター
ゲット保持支柱５・・・ベローズ　　　　　　　　６・
・・歪ゲージ７・・・ターゲット冷却水配管　　８・・
・高圧印加ケーブル９・・・真空壁FIG. 1 is a longitudinal sectional view showing a first embodiment of the present invention, FIG. 2 is a longitudinal sectional view showing a second embodiment of the present invention, and FIG. 3 is a longitudinal sectional view showing a target unit of a conventional sputtering apparatus. . 1... Target 2... Target back plate 3... Target holding block 4... Target holding column 5... Bellows 6.
...Strain gauge 7...Target cooling water piping 8...
・High voltage application cable 9...Vacuum wall

Claims (1)

【特許請求の範囲】[Claims] （１）スパッタエッチングするターゲットを備えたスパ
ッタ装置において、ターゲットの重量変化を測定する機
構を有することを特徴とするスパッタ装置。(1) A sputtering apparatus equipped with a target to be sputter etched, characterized by having a mechanism for measuring changes in the weight of the target.
JP63332533A 1988-12-28 1988-12-28 Sputtering equipment Expired - Fee Related JP2734588B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP63332533A JP2734588B2 (en) 1988-12-28 1988-12-28 Sputtering equipment

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP63332533A JP2734588B2 (en) 1988-12-28 1988-12-28 Sputtering equipment

Publications (2)

Publication Number Publication Date
JPH02179869A true JPH02179869A (en) 1990-07-12
JP2734588B2 JP2734588B2 (en) 1998-03-30

Family

ID=18255985

Family Applications (1)

Application Number Title Priority Date Filing Date
JP63332533A Expired - Fee Related JP2734588B2 (en) 1988-12-28 1988-12-28 Sputtering equipment

Country Status (1)

Country Link
JP (1) JP2734588B2 (en)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2003068499A (en) * 2001-08-29 2003-03-07 Mitsubishi Heavy Ind Ltd Vacuum cable and vacuum plasma treatment device
WO2015000575A1 (en) * 2013-07-03 2015-01-08 Oerlikon Trading Ag, Trübbach Target age compensation method for performing stable reactive sputtering processes
CN107034439A (en) * 2017-04-27 2017-08-11 武汉华星光电技术有限公司 For the target consumption condition monitoring system and monitoring method in spattering filming device
CN108085646A (en) * 2017-10-31 2018-05-29 东莞市汇成真空科技有限公司 A kind of large tank inner wall plated film vacuum cathode arc coating machine

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH02111879A (en) * 1988-10-19 1990-04-24 Nippon Electric Ind Co Ltd Measuring device for film component

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH02111879A (en) * 1988-10-19 1990-04-24 Nippon Electric Ind Co Ltd Measuring device for film component

Cited By (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2003068499A (en) * 2001-08-29 2003-03-07 Mitsubishi Heavy Ind Ltd Vacuum cable and vacuum plasma treatment device
WO2015000575A1 (en) * 2013-07-03 2015-01-08 Oerlikon Trading Ag, Trübbach Target age compensation method for performing stable reactive sputtering processes
CN105339521A (en) * 2013-07-03 2016-02-17 欧瑞康表面处理解决方案股份公司特鲁巴赫 Target age compensation method for performing stable reactive sputtering processes
KR20160027022A (en) * 2013-07-03 2016-03-09 오엘리콘 썰피스 솔루션즈 아게, 츠르바크 Target age compensation method for performing stable reactive sputtering processes
JP2016526604A (en) * 2013-07-03 2016-09-05 エリコン サーフェス ソリューションズ アーゲー、 プフェフィコン Compensation method for target age for stable reactive sputtering process
US9957600B2 (en) 2013-07-03 2018-05-01 Oerlikon Surface Solutions AG, Präffikon Target age compensation method for performing stable reactive sputtering processes
CN107034439A (en) * 2017-04-27 2017-08-11 武汉华星光电技术有限公司 For the target consumption condition monitoring system and monitoring method in spattering filming device
CN108085646A (en) * 2017-10-31 2018-05-29 东莞市汇成真空科技有限公司 A kind of large tank inner wall plated film vacuum cathode arc coating machine
CN108085646B (en) * 2017-10-31 2023-06-23 东莞市汇成真空科技有限公司 Vacuum cathode arc coating machine for coating inner wall of large tank body

Also Published As

Publication number Publication date
JP2734588B2 (en) 1998-03-30

Similar Documents

Publication Publication Date Title
US3664942A (en) End point detection method and apparatus for sputter etching
Tufte et al. Silicon diffused-element piezoresistive diaphragms
EP0510791B1 (en) Flow verification for process gas in a wafer processing system, apparatus and method
US5382911A (en) Reaction chamber interelectrode gap monitoring by capacitance measurement
JPH02179869A (en) Sputtering device
JPH09203681A (en) Pressure detector
Kraft et al. Measurement of the lattice thermal expansion coefficients of thin metal films on substrates
US4812800A (en) Strain gage having a thin discontinuous metal layer
JPH0218384B2 (en)
JPH1032233A (en) Silicon wafer, glass wafer and measurement of stress using them
JP3479034B2 (en) Processing method of plasma etching apparatus
JPH04181069A (en) Metallic gasket
JP2715903B2 (en) Temperature monitor
Seel et al. Piezoresistive microcantilevers for in situ stress measurements during thin film deposition
JP2756126B2 (en) Sputtering equipment
JPH05267224A (en) Dryetching system
JPH0754140A (en) Sputtering device
JP2001141592A (en) Diaphragm pressure gage and its error measuring method
JPS58215521A (en) Water leakage detector
JPS6311827A (en) Zero point corrector for differential manometer
JPS59169183A (en) Strain gauge type semiconductor pressure sensor
JPH06103232B2 (en) Pressure sensitive foil
JPH01274427A (en) Specimen rear gass pressure controller
JPH0786268A (en) Microwave plasma processing device
KR100217816B1 (en) Measuring method and its apparatus of end point of dry etching

Legal Events

Date Code Title Description
R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

LAPS Cancellation because of no payment of annual fees