JPH02177353A - Formation of lead of semiconductor device - Google Patents

Formation of lead of semiconductor device

Info

Publication number
JPH02177353A
JPH02177353A JP33140388A JP33140388A JPH02177353A JP H02177353 A JPH02177353 A JP H02177353A JP 33140388 A JP33140388 A JP 33140388A JP 33140388 A JP33140388 A JP 33140388A JP H02177353 A JPH02177353 A JP H02177353A
Authority
JP
Japan
Prior art keywords
lead
bent
semiconductor device
bending
curvature
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP33140388A
Other languages
Japanese (ja)
Other versions
JPH0712070B2 (en
Inventor
Katsuhiro Ooe
大江 克拓
Kaoru Ishihara
薫 石原
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP33140388A priority Critical patent/JPH0712070B2/en
Publication of JPH02177353A publication Critical patent/JPH02177353A/en
Publication of JPH0712070B2 publication Critical patent/JPH0712070B2/en
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

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Landscapes

  • Lead Frames For Integrated Circuits (AREA)

Abstract

PURPOSE:To prevent failure of appearance of a lead, obtaining a lead bent part with improved seam part by bending a lead tip part of a semiconductor device in several steps, by setting the radius of curvature at the bent part to the same value, and by overlapping one part of the bent part. CONSTITUTION:A semiconductor device is placed on a bending die and a lead 4 is bent by a bending punch. Bending is performed in two steps. That is, a bent part 4a is formed at the tip of the lead 4 and then a bent part 4b is formed. Then, the radius of curvature of the bent parts 4a and 4b is set to the same value and then one part B of the neighboring two bent parts 4a and 4b is overlapped. Thus, a plurality of bent parts with the same radius of curvature at the lead tip part can be continuously formed.

Description

【発明の詳細な説明】 〔産業上の利用分野〕 本発明は、例えばPLCC等の半導体装置のリードを成
形する場合に使用する半導体装置のリード成形方法に関
する。
DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to a method for forming leads of a semiconductor device, which is used for forming leads of a semiconductor device such as a PLCC.

〔従来の技術〕[Conventional technology]

一般に、半導体装置のリード成形方法は、リード端子の
先端部を複数回に分けて折り曲げ形成することが行われ
ている。これは、リード端子の表面に例えば半田めっき
処理が施されているため、リード端子の先端部を一挙に
折り曲げる(120’〜130°)と、リード先端部に
所謂半田ひげが発生してしまい、この半田ひげの発生を
抑制する必要があるからである。
Generally, in a lead forming method for a semiconductor device, the tip portion of a lead terminal is formed by bending it in multiple steps. This is because the surface of the lead terminal is subjected to, for example, a solder plating process, so if the tip of the lead terminal is bent all at once (120' to 130°), so-called solder whiskers will occur at the tip of the lead. This is because it is necessary to suppress the generation of solder whiskers.

従来、この種の半導体装置のリード成形は以下に示す方
法が採用されでいるにれを第2図を用いて説明すると、
先ず半導体装置lを曲げダイ2上に載置し、次にこの曲
げダイ2とストリッパ3によってリード4を挾持した後
、曲げバンチ5によって折り曲げる。この際、リード4
の折り曲げは、第3図(alおよび(b)に示すように
2回に分けて行われる。なお、第3図(a)および(b
)は第2図のA部分を拡大して示し、同図において符号
4a、 4bは前記リード4の折曲部である。
Conventionally, the following method has been adopted for lead forming of this type of semiconductor device.The following method will be explained using FIG.
First, the semiconductor device 1 is placed on the bending die 2, and then the leads 4 are held between the bending die 2 and the stripper 3, and then bent by the bending bunch 5. At this time, lead 4
The bending is performed in two steps as shown in Figures 3 (a) and (b).
) is an enlarged view of part A in FIG.

〔発明が解決しようとする課題〕[Problem to be solved by the invention]

ところで、従来の半導体装置のリード成形方法において
は、リード4の各折曲部4a、 4bの曲率半径を同一
の曲率半径に設定するものの、これら両折曲部4a、 
4bを重複させるものではなく、このため両折曲部4a
、 4bが連続しておらず、すなわち両折曲部4a、 
4b間に不連続部が発生していた。この結果、両折曲部
4a、 4bの継目部分が良好でなく、リード4自体に
外観不良が発生するという問題があった。
By the way, in the conventional lead forming method for a semiconductor device, although the radius of curvature of each of the bent portions 4a and 4b of the lead 4 is set to the same radius of curvature, both of the bent portions 4a and 4b are
4b is not overlapped, and therefore both bent portions 4a
, 4b are not continuous, that is, both bent portions 4a,
A discontinuous portion occurred between 4b. As a result, there was a problem in that the joint between the two bent portions 4a and 4b was not good, and the lead 4 itself had a poor appearance.

本発明はこのような事情に鑑みてなされたもので、継目
部分が良好なリード折曲部を得ることができ、もってリ
ードの外観不良発生を防止することができる半導体装置
のリード成形方法を提供するものである。
The present invention has been made in view of the above circumstances, and provides a lead forming method for a semiconductor device that can obtain a lead bent portion with a good seam portion and thereby prevent appearance defects of the lead. It is something to do.

〔課題を解決するための手段〕[Means to solve the problem]

本発明に係る半導体装置のリード成形方法は、半導体装
置のリード先端部を複数回に分けて折り曲げ形成するリ
ード成形方法であって、これら折曲部の各曲率半径を同
一の半径に設定し、かつ互いに隣り合う2つの折曲部の
一部を重複させるものである。
A lead forming method for a semiconductor device according to the present invention is a lead forming method in which a lead end portion of a semiconductor device is formed by bending it in multiple steps, and the radius of curvature of each of these bending portions is set to the same radius, In addition, two adjacent bent portions partially overlap.

〔作 用〕[For production]

本発明においては、各リード先端部に同一の曲率半径を
もつ複数の折曲部を連続して形成することができる。
In the present invention, a plurality of bent portions having the same radius of curvature can be continuously formed at each lead tip.

〔実施例〕〔Example〕

以下、本発明による半導体Haのリード成形方法を第1
図(alおよび(b)に示す実施例によって詳細に説明
する。ここで、同図において第2図および第3図(al
、 (blと同一の部材については同一の符号を付し、
詳細な説明は省略する。
Hereinafter, the method for forming semiconductor Ha leads according to the present invention will be explained in the first part.
This will be explained in detail with reference to the embodiments shown in FIGS. 2 and 3 (al and b).
, (The same members as bl are given the same reference numerals,
Detailed explanation will be omitted.

先ず、リード成形前の半導体装置1を曲げダイ2上に載
置する0次いで、プレス(図示せず)を下降させ、曲げ
ダイ2とストリッパ3によってリード4を挟持する。し
かる後、リート′4を曲げバンチ5によって折り曲げる
。ここで、リード4の折り曲げは、第3図(δ)および
(blに示すように2回に分けて行われる。すなわち、
リード4の先端部に折曲部4aを形成してから、折曲部
4bを形成するのである。この際、折曲部4aの曲率半
径ρ、と折曲部4bの曲率半径ρ2を同一の半径(ρ1
 =ρ2=ρ)に設定し、かつ互いに隣り合う2つの折
曲部4a、 4bの一部Bを重複させる。
First, the semiconductor device 1 before lead forming is placed on the bending die 2 .Then, a press (not shown) is lowered and the leads 4 are sandwiched between the bending die 2 and the stripper 3 . After that, the leat '4 is bent by the bending bunch 5. Here, the lead 4 is bent in two steps as shown in FIG. 3 (δ) and (bl).
After the bent portion 4a is formed at the tip of the lead 4, the bent portion 4b is formed. At this time, the radius of curvature ρ of the bent portion 4a and the radius of curvature ρ2 of the bent portion 4b are set to the same radius (ρ1
=ρ2=ρ), and the portions B of the two adjacent bent portions 4a and 4b are overlapped.

このようにして、半導体装置Iのリード4を成形するこ
とができる。
In this way, the leads 4 of the semiconductor device I can be formed.

したがって、本発明においては、各リード4の先端部に
同一の曲率半径ρをもつ2個の折曲部4a。
Therefore, in the present invention, the tip of each lead 4 has two bent portions 4a having the same radius of curvature ρ.

4bを連続して形成することができるから、継目部分が
良好なリード折曲部4a、 4bを得ることができる。
Since the lead bending parts 4b can be formed continuously, the lead bent parts 4a and 4b with good seam parts can be obtained.

なお、本実施例においては、リード4の先端部に2回に
分けて折り曲げることにより折曲部4a。
In this embodiment, the bent portion 4a is formed by bending the tip of the lead 4 twice.

4bを形成する例を示したが、本発明はこれに限定され
るものではなく、例えば3回、4回、・・・に分けて折
り曲げてもよく、その折曲回数は適宜変更することがで
きる。
Although an example of forming the 4b is shown, the present invention is not limited to this. For example, it may be folded three times, four times, etc., and the number of folds may be changed as appropriate. can.

また、本実施例においては、PLCCの半導体装置に適
用する場合を示したが、本発明はこの他SOJ等の半導
体装置にも実施例と同様に適用可能である。
Further, in this embodiment, a case where the present invention is applied to a PLCC semiconductor device is shown, but the present invention can also be applied to other semiconductor devices such as an SOJ in the same manner as in the embodiment.

因に、本発明におけるリード成形前の半導体装置は、リ
ードフレーム上に半導体素子を接合し、この半導体素子
とリードフレームのインナーリードとをワイヤによって
接続した後、このワイヤ。
Incidentally, in the semiconductor device before lead forming according to the present invention, a semiconductor element is bonded onto a lead frame, the semiconductor element and the inner lead of the lead frame are connected by a wire, and then the wire is bonded.

インナーリードおよび半導体素子を樹脂によって封止す
ることにより製造することができる。
It can be manufactured by sealing the inner lead and the semiconductor element with resin.

この後、半導体装置のアウターリードに対して本発明に
おけるリード成形処理が施されるのである。
Thereafter, the lead forming process of the present invention is performed on the outer leads of the semiconductor device.

〔発明の効果〕〔Effect of the invention〕

以上説明したように本発明によれば、半導体装置のリー
ド先端部を複数回に分けて折り曲げ形成するリード成形
方法であって、これら折曲部の各曲率半径を同一の半径
に設定し、かつ互いに隣り合う2つの折曲部の一部を重
複させるので、各リード先端部に同一の曲率半径をもつ
複数の折曲部を連続して形成することができる。したが
って、継目部分が良好なリード折曲部を得ることができ
るから、リードの外観不良発生を防止することができる
As explained above, according to the present invention, there is provided a lead forming method in which the lead end portion of a semiconductor device is formed by bending the lead end portion in multiple steps, the radius of curvature of each of these bending portions being set to the same radius, and Since two adjacent bent portions partially overlap, a plurality of bent portions having the same radius of curvature can be continuously formed at each lead tip. Therefore, it is possible to obtain a lead bent portion with a good seam portion, so that it is possible to prevent the occurrence of poor appearance of the lead.

【図面の簡単な説明】[Brief explanation of the drawing]

第1図(Jl)および〜)は本発明に係る半導体装置の
リード成形方法を説明するためにリード先端部を拡大し
て示す正面図、第2図は半導体装置のリード成形方法に
使用するリード成形装置を示す断面図、第3図(a)お
よび(blは従来の半導体装置のり−ド成形方法を説明
するためにリード先端部を拡大して示す正面図である。 1・・・・半導体装置、4・・・・リード、4a。 4h・・・・折曲部、ρ、ρ1.ρ2 ・・・・曲率半
径、B・・・・重複部。 代   理   人   大 岩 4、リート”。 4G、4b :d’r’ @押 B:t−狭′叶第2図 第3図 (Q) (b)
FIG. 1 (Jl) and ~) are front views showing enlarged lead tips to explain the lead forming method for a semiconductor device according to the present invention, and FIG. 2 is a front view showing a lead used in the lead forming method for a semiconductor device. A sectional view showing a molding device, and FIGS. 3(a) and 3(b) are front views showing an enlarged lead tip portion to explain a conventional semiconductor device glue molding method. 1...Semiconductor Device, 4... Lead, 4a. 4h... Bent part, ρ, ρ1. ρ2... Radius of curvature, B... Overlapping part. Agent Oiwa 4, Reet". 4G , 4b: d'r' @press B: t-narrow leaf Figure 2 Figure 3 (Q) (b)

Claims (1)

【特許請求の範囲】[Claims] 半導体装置のリード先端部を複数回に分けて折り曲げ形
成するリード成形方法であって、これら折曲部の各曲率
半径を同一の半径に設定し、かつ互いに隣り合う2つの
折曲部の一部を重複させることを特徴とする半導体装置
のリード成形方法。
A lead forming method in which the tip of a lead of a semiconductor device is formed by bending it in multiple steps, the radius of curvature of each of these bending portions being set to the same radius, and a portion of two bending portions that are adjacent to each other. A method for forming leads for a semiconductor device, characterized by overlapping the leads.
JP33140388A 1988-12-27 1988-12-27 Lead molding method for semiconductor device Expired - Lifetime JPH0712070B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP33140388A JPH0712070B2 (en) 1988-12-27 1988-12-27 Lead molding method for semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP33140388A JPH0712070B2 (en) 1988-12-27 1988-12-27 Lead molding method for semiconductor device

Publications (2)

Publication Number Publication Date
JPH02177353A true JPH02177353A (en) 1990-07-10
JPH0712070B2 JPH0712070B2 (en) 1995-02-08

Family

ID=18243301

Family Applications (1)

Application Number Title Priority Date Filing Date
JP33140388A Expired - Lifetime JPH0712070B2 (en) 1988-12-27 1988-12-27 Lead molding method for semiconductor device

Country Status (1)

Country Link
JP (1) JPH0712070B2 (en)

Also Published As

Publication number Publication date
JPH0712070B2 (en) 1995-02-08

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