JPH02169078A - Method for cleaning substrate - Google Patents
Method for cleaning substrateInfo
- Publication number
- JPH02169078A JPH02169078A JP32138688A JP32138688A JPH02169078A JP H02169078 A JPH02169078 A JP H02169078A JP 32138688 A JP32138688 A JP 32138688A JP 32138688 A JP32138688 A JP 32138688A JP H02169078 A JPH02169078 A JP H02169078A
- Authority
- JP
- Japan
- Prior art keywords
- substrate
- water
- wiping
- organic solvent
- vacuum
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000000758 substrate Substances 0.000 title claims abstract description 62
- 238000000034 method Methods 0.000 title claims description 19
- 238000004140 cleaning Methods 0.000 title claims description 17
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims abstract description 29
- 239000004744 fabric Substances 0.000 claims abstract description 16
- 238000010438 heat treatment Methods 0.000 claims abstract description 10
- 238000005498 polishing Methods 0.000 claims abstract description 7
- 239000003960 organic solvent Substances 0.000 claims description 21
- 239000011368 organic material Substances 0.000 claims 1
- 239000000356 contaminant Substances 0.000 abstract description 19
- KFZMGEQAYNKOFK-UHFFFAOYSA-N Isopropanol Chemical compound CC(C)O KFZMGEQAYNKOFK-UHFFFAOYSA-N 0.000 abstract description 8
- 239000010409 thin film Substances 0.000 abstract description 5
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 abstract description 4
- 239000003082 abrasive agent Substances 0.000 abstract description 4
- 239000002904 solvent Substances 0.000 abstract description 4
- 229920002635 polyurethane Polymers 0.000 abstract description 2
- 239000004814 polyurethane Substances 0.000 abstract description 2
- 239000000853 adhesive Substances 0.000 abstract 1
- 230000001070 adhesive effect Effects 0.000 abstract 1
- 239000002245 particle Substances 0.000 description 4
- 239000000243 solution Substances 0.000 description 4
- 239000010410 layer Substances 0.000 description 3
- 239000007864 aqueous solution Substances 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 229910000420 cerium oxide Inorganic materials 0.000 description 2
- 239000000428 dust Substances 0.000 description 2
- 239000010408 film Substances 0.000 description 2
- BMMGVYCKOGBVEV-UHFFFAOYSA-N oxo(oxoceriooxy)cerium Chemical compound [Ce]=O.O=[Ce]=O BMMGVYCKOGBVEV-UHFFFAOYSA-N 0.000 description 2
- 239000011347 resin Substances 0.000 description 2
- 229920005989 resin Polymers 0.000 description 2
- 239000000271 synthetic detergent Substances 0.000 description 2
- 238000007796 conventional method Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 239000005416 organic matter Substances 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 238000013020 steam cleaning Methods 0.000 description 1
- 239000002344 surface layer Substances 0.000 description 1
Landscapes
- Cleaning In General (AREA)
- Manufacturing Of Printed Wiring (AREA)
Abstract
Description
【発明の詳細な説明】
〔産業上の利用分野
本発明は，３（膜形成のための基板の洗浄方法に関する
ものである。DETAILED DESCRIPTION OF THE INVENTION [Industrial Field of Application] The present invention relates to 3 (method for cleaning a substrate for film formation).
プリント配線板用の基板などのように、表面に薄膜を形
成するための基板の洗浄方法として，従来は有機溶剤や
水、または合成洗剤を溶解させた水溶液中に基板を浸漬
させたり．あるいは有機溶剤の蒸気や水蒸気中に基板を
曝露することにより表面を洗浄していた。また、次の工
程として，大気または真空中にて基板を１００〜３００
℃に加熱したり，あるいは荷電粒子を表面に衝突させて
洗浄を行っていた。The conventional method for cleaning substrates to form a thin film on the surface, such as substrates for printed wiring boards, is to immerse the substrate in an aqueous solution containing an organic solvent, water, or synthetic detergent. Alternatively, the surface has been cleaned by exposing the substrate to organic solvent vapor or water vapor. In addition, as the next step, the substrate is heated for 100 to 300 minutes in air or vacuum.
Cleaning was done by heating the surface to ℃ or by bombarding the surface with charged particles.
上記のような従来の基板の洗浄方法のうち、有機溶剤や
水等による洗浄では、有機溶剤や水、合成洗剤を溶解さ
せた水溶液中に基板を浸漬すると。Among the conventional substrate cleaning methods as described above, cleaning with an organic solvent, water, etc. involves immersing the substrate in an aqueous solution in which an organic solvent, water, or synthetic detergent is dissolved.
表面の粒子状の汚染物や，各々の溶液に溶解する汚染物
が除去される。また、蒸気洗浄においては、汚染物が基
板表面に結露した溶液中に溶解し，除去される。Particulate contaminants on the surface and contaminants dissolved in each solution are removed. Further, in steam cleaning, contaminants are dissolved in a solution condensed on the substrate surface and removed.
大気または真空中において基板を高温に加熱する洗浄で
は，揮発性成分が除去される。荷電粒子を表面に衝突さ
せる場合は、スパッター効果により汚染物が除去される
。Cleaning involves heating the substrate to high temperatures in air or vacuum to remove volatile components. When charged particles are bombarded with a surface, the sputtering effect removes contaminants.
後者の２つの方法は、前者で充分基板表面が洗ゆされて
いる場合に有効である。The latter two methods are effective if the substrate surface is sufficiently washed with the former.
従来の薄膜形成のための基板洗浄は以上のような方法に
よるため、基板が大型である場合や、溶液が内部に浸透
する基板の場合、あるいは耐熱性が低い基板の場合には
適用することができないという問題点があった。Conventional substrate cleaning for thin film formation uses the methods described above, so it cannot be applied when the substrate is large, the solution penetrates into the substrate, or the substrate has low heat resistance. The problem was that it couldn't be done.
この発明は上記のような問題点を解消するためになされ
たもので、基板の溶液中への浸漬、蒸気中への曝Ｌ・“
れあるいは高温加熱をすることなしに。This invention was made to solve the above-mentioned problems.
or without high temperature heating.
充分な薄膜の密着力が得られる基板の洗浄方法を得るこ
とを目的とする。The object of the present invention is to provide a method for cleaning a substrate that provides sufficient adhesion of a thin film.
この発明に係る基板洗浄方法は１次の工程に従い、基板
に付着している有機、無機物質の汚れを除去する洗浄方
法である。The substrate cleaning method according to the present invention is a cleaning method for removing organic and inorganic stains adhering to a substrate according to a first step.
Ａ：有機溶剤または水を含浸させた布により基板表面を
拭く工程。A: A process of wiping the substrate surface with a cloth impregnated with an organic solvent or water.
Ｂ：研磨材を分散させた水とポリシャまたはバフにより
嬶、（板表面を研磨する工程。B: A process of polishing the board surface using water in which an abrasive is dispersed and a polisher or buff.
Ｃ：有機溶剤または水を含浸させた布により基板表面を
拭く工程。C: A step of wiping the substrate surface with a cloth impregnated with an organic solvent or water.
Ｄ：真空中にて低温加熱する工程。D: Process of heating at low temperature in vacuum.
すなわち本発明においては、有機溶剤または水を含浸さ
せた布により基板表面を拭いた後に、研磨材を分散させ
た水およびポリシャまたはバフにより基板表面を研磨し
、さらに有機溶剤または水を含浸させた布により基板表
面を拭き、最後に真空中にて低温加熱するものである。That is, in the present invention, after wiping the substrate surface with a cloth impregnated with an organic solvent or water, the substrate surface is polished with water in which an abrasive is dispersed and a polisher or a buff, and the cloth is further impregnated with an organic solvent or water. The surface of the substrate is wiped with a cloth and finally heated at low temperature in a vacuum.
［作 用〕
この発明の基板洗浄方法においては１次のような機構に
より汚染物が除去される。[Function] In the substrate cleaning method of the present invention, contaminants are removed by the following mechanism.
Ａ工程：有機溶剤または水を含浸させた布で基板表面を
拭くことにより、最外層部の粒子状の汚れが布巾に捕獲
、除去される。また溶液中に汚染物が溶解し、同様に除
去される。Step A: By wiping the substrate surface with a cloth impregnated with an organic solvent or water, particulate dirt on the outermost layer is captured and removed by the cloth. Contaminants are also dissolved in the solution and removed as well.
Ｂ工程二上記工程により除去されなかった汚染物は、研
磨により機械的に削られ、除去される。B Step 2 Contaminants not removed in the above steps are mechanically scraped off and removed by polishing.
Ｃ工程：さらに研磨後、基板表面に残った研磨材や削り
取られた汚染物は、有機溶剤や水を含浸させた布で拭く
ことにより除去される。Step C: Further, after polishing, the abrasive material remaining on the substrate surface and the scraped contaminants are removed by wiping with a cloth impregnated with an organic solvent or water.
Ｄ工程：最後に、真空中において基板表面を低温加熱す
ることにより、前工程の作業で表面に付着した有機溶剤
や水が揮発し、薄膜を形成する面は清浄な面となる。Step D: Finally, by heating the substrate surface at a low temperature in a vacuum, the organic solvent and water that adhered to the surface in the previous step are volatilized, and the surface on which the thin film is to be formed becomes a clean surface.
以下、この発明の一実施例を図について説明する。第１
図ないし第５図は各洗浄工程を示す基板の断面図である
。第１図は洗浄前の基板の表面状態を示し、（１）は基
板で１例えば樹脂板、（２）は最外層部に付着した粒子
状の汚染物で、例えば塵埃、（３）は有機溶剤や水に溶
解する汚染物で１例えば油脂、（４）は基板（１）との
付着が強固な汚染物で。An embodiment of the present invention will be described below with reference to the drawings. 1st
5 through 5 are cross-sectional views of the substrate showing each cleaning process. Figure 1 shows the surface condition of the substrate before cleaning. (1) is the substrate, for example, a resin plate, (2) is particulate contaminants attached to the outermost layer, such as dust, and (3) is organic matter. (4) is a contaminant that dissolves in solvents and water, such as oil and fat, and (4) is a contaminant that strongly adheres to the substrate (1).
基板（１）と化学反応した樹脂や恒水である。These are resins and constant water that have chemically reacted with the substrate (1).
第２図はＡ工程後の基板（１）の表面状態を示し、例え
ばアセトンのような有機溶剤を含浸させた布で、第１図
に示した基板（１）の表面を拭くことにより、１１埃等
の最外層部に付着した粒子状の汚染物（２）、 および
油脂等の有機溶剤や水に溶解する汚染物（３）が除去さ
れる。Figure 2 shows the surface state of the substrate (1) after step A. For example, by wiping the surface of the substrate (1) shown in Figure 1 with a cloth impregnated with an organic solvent such as acetone, Particulate contaminants such as dust attached to the outermost layer (2) and contaminants dissolved in organic solvents such as oil and water (3) are removed.
第３図はＢ工程後の基板（１）の表面状態を示し、基板
（１）の表面を例えば粒径０．０１〜５μ■の酸化セリ
ウムのような研磨材を分散させた水と１例えばポリウレ
タンのポリシャを用いて研磨することにより、基板（１
）との付着が強固な汚染物（４）が除去される。（５）
は表面に残った酸化セリウム等の研磨材または削り取ら
れた汚染物である。Figure 3 shows the surface state of the substrate (1) after step B. The surface of the substrate (1) is coated with water in which an abrasive such as cerium oxide with a particle size of 0.01 to 5 μm is dispersed, for example. By polishing with a polyurethane polisher, the substrate (1
) is removed. (5)
is abrasive material such as cerium oxide remaining on the surface or contaminants that have been scraped off.
第４図はＣ工程後の基板（１）の表面状態を示し。FIG. 4 shows the surface condition of the substrate (1) after step C.
例えばイソプロピルアルコールのような有機溶剤または
水を含浸させた清浄な布で前記基板（１）の表面を拭く
ことにより、基板（１）の表面に残った研磨材や削り取
られた汚染物（５）が除去される。For example, by wiping the surface of the substrate (1) with a clean cloth impregnated with an organic solvent such as isopropyl alcohol or water, any abrasive material or scraped contaminants (5) remaining on the surface of the substrate (1) can be removed. is removed.
（６）は表面に付着しているイソプロピルアルコール等
の有機溶剤または水である。(6) is an organic solvent such as isopropyl alcohol or water attached to the surface.
第５図はＤ工程後の基板（１）の表面状態を示し、真空
中において約８５℃で基板（１）の表面を加熱すること
により、有機溶剤または水（６）が除去され。FIG. 5 shows the surface state of the substrate (1) after step D, in which the organic solvent or water (6) is removed by heating the surface of the substrate (1) at about 85° C. in vacuum.
基板（１）の清浄な面（ｌａ）が表層に得られる。A clean surface (la) of the substrate (1) is obtained at the surface layer.
なお、上記実施例では真空中における洗浄方法は低温加
熱のみであるが、さらに荷電粒子による基板（１）表面
の衝撃を行ってもよい。In the above embodiment, the cleaning method in vacuum is only low-temperature heating, but the surface of the substrate (1) may also be bombarded with charged particles.
［発明の効果］
以上のように、この発明によれば、基板表面を（１）有
機溶剤または水を含浸させた布で拭き、（２）研磨材を
分散させた水とポリシャまたはバフを用いて研磨し、（
３）その残留物を有機溶剤または水を含浸させた布で拭
いて除去し、（４）最後に真空中で低温加熱を行い、揮
発成分を揮発除去するようにしたので、基板を溶液中に
浸漬したり、蒸気中へ曝露したり、あるいは高温加熱す
ることなく、大型基板や耐熱性の低い基板、あるいは表
面以外から液体が内部に浸透するような基板に対しても
。[Effects of the Invention] As described above, according to the present invention, the substrate surface is wiped (1) with a cloth impregnated with an organic solvent or water, and (2) with water in which an abrasive is dispersed and a polisher or buff. and polish it (
3) Remove the residue by wiping with a cloth impregnated with organic solvent or water, and (4) Finally, heat the substrate at low temperature in a vacuum to volatilize and remove the volatile components. Even for large substrates, substrates with low heat resistance, or substrates that allow liquid to penetrate from outside the surface, without immersing them, exposing them to steam, or heating them to high temperatures.
充分な薄膜の密着力が達成される清浄度を得るように洗
浄することができる。It can be cleaned to such a degree that sufficient film adhesion is achieved.
第１図ないし第５図は実施例の各洗浄工程を示す基板の
断面図である。
各図中、同一符号は同一または相当部分を示し。
（１）は基板、（２）〜（４）は汚染物、（５）は研磨
材または削り取られた汚染物、（６）は有機溶剤または
水である。1 to 5 are cross-sectional views of a substrate showing each cleaning process of the embodiment. In each figure, the same reference numerals indicate the same or corresponding parts. (1) is a substrate, (2) to (4) are contaminants, (5) is an abrasive or scraped contaminant, and (6) is an organic solvent or water.
Claims (1)
無機物質の汚れを除去することを特徴とする基板洗浄方
法。 Ａ：有機溶剤または水を含浸させた布により基板表面を
拭く工程。 Ｂ：研磨材を分散させた水とポリシャまたはバフにより
基板表面を研磨する工程。 Ｃ：有機溶剤または水を含浸させた布により基板表面を
拭く工程。 Ｄ：真空中にて低温加熱する工程。(1) According to the following process, the organic material attached to the substrate surface,
A substrate cleaning method characterized by removing inorganic dirt. A: A process of wiping the substrate surface with a cloth impregnated with an organic solvent or water. B: A step of polishing the substrate surface using water in which an abrasive is dispersed and a polisher or buff. C: A step of wiping the substrate surface with a cloth impregnated with an organic solvent or water. D: Process of heating at low temperature in vacuum.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP32138688A JPH02169078A (en) | 1988-12-20 | 1988-12-20 | Method for cleaning substrate |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP32138688A JPH02169078A (en) | 1988-12-20 | 1988-12-20 | Method for cleaning substrate |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH02169078A true JPH02169078A (en) | 1990-06-29 |
Family
ID=18131976
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP32138688A Pending JPH02169078A (en) | 1988-12-20 | 1988-12-20 | Method for cleaning substrate |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH02169078A (en) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0493816A (en) * | 1990-08-03 | 1992-03-26 | Sharp Corp | Surface cleaning device for liquid crystal display panel |
| JPH04252045A (en) * | 1991-01-28 | 1992-09-08 | Nec Corp | Evaluation of semiconductor element manufacturing process |
| JPH05284A (en) * | 1991-06-18 | 1993-01-08 | Hitachi Ltd | Cleaning method, method for cleaning part, washing sloution, processing treatment solution, magnetic recording medium and production thereof and magnetic recording apparatus |
| JP2006128442A (en) * | 2004-10-29 | 2006-05-18 | Optrex Corp | Method of washing connection lead terminal |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5114764A (en) * | 1974-07-25 | 1976-02-05 | Shinei Ind | |
| JPS6050536A (en) * | 1983-08-30 | 1985-03-20 | Hoya Corp | Method for washing photomask glass base plate |
| JPS612386A (en) * | 1984-06-15 | 1986-01-08 | 株式会社日立製作所 | Method of producing printed circuit board |
| JPS63170923A (en) * | 1987-01-08 | 1988-07-14 | Matsushita Electric Ind Co Ltd | Method and equipment for cleaning semiconductor substrate |
-
1988
- 1988-12-20 JP JP32138688A patent/JPH02169078A/en active Pending
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5114764A (en) * | 1974-07-25 | 1976-02-05 | Shinei Ind | |
| JPS6050536A (en) * | 1983-08-30 | 1985-03-20 | Hoya Corp | Method for washing photomask glass base plate |
| JPS612386A (en) * | 1984-06-15 | 1986-01-08 | 株式会社日立製作所 | Method of producing printed circuit board |
| JPS63170923A (en) * | 1987-01-08 | 1988-07-14 | Matsushita Electric Ind Co Ltd | Method and equipment for cleaning semiconductor substrate |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0493816A (en) * | 1990-08-03 | 1992-03-26 | Sharp Corp | Surface cleaning device for liquid crystal display panel |
| JP2581993B2 (en) * | 1990-08-03 | 1997-02-19 | シャープ株式会社 | Liquid crystal display panel surface cleaning device |
| JPH04252045A (en) * | 1991-01-28 | 1992-09-08 | Nec Corp | Evaluation of semiconductor element manufacturing process |
| JPH05284A (en) * | 1991-06-18 | 1993-01-08 | Hitachi Ltd | Cleaning method, method for cleaning part, washing sloution, processing treatment solution, magnetic recording medium and production thereof and magnetic recording apparatus |
| JP2006128442A (en) * | 2004-10-29 | 2006-05-18 | Optrex Corp | Method of washing connection lead terminal |
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