JPH02168153A - Method for forming immobilized enzyme film - Google Patents

Method for forming immobilized enzyme film

Info

Publication number
JPH02168153A
JPH02168153A JP63325216A JP32521688A JPH02168153A JP H02168153 A JPH02168153 A JP H02168153A JP 63325216 A JP63325216 A JP 63325216A JP 32521688 A JP32521688 A JP 32521688A JP H02168153 A JPH02168153 A JP H02168153A
Authority
JP
Japan
Prior art keywords
film
wafer
enzyme
solution
developed
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP63325216A
Other languages
Japanese (ja)
Inventor
Yoshie Kawana
川名 美江
Shigefumi Ito
成史 伊藤
Shigeyuki Miyamoto
重幸 宮本
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp filed Critical NEC Corp
Priority to JP63325216A priority Critical patent/JPH02168153A/en
Publication of JPH02168153A publication Critical patent/JPH02168153A/en
Pending legal-status Critical Current

Links

Abstract

PURPOSE:To form an immobilized enzyme film with uniform thickness by developing a wafer and a solution of protein while cooling the both to equal to or lower than 15 deg.C when said wafer onto which said solution of protein is developed is rotated to form a thin film. CONSTITUTION:A photoresist solution is developed on a substrate 4 of sapphire having an ion sensor 5 of semiconductor field effect type thereon, and the substrate 4 is rotated at 3,000rpm for 30 seconds. Then, the substrate is pre-baked, exposed and developed with the use of a photomask, so that a part of a photoresist film 6 where an immobilized enzyme film 7 is to be formed is removed. Thereafter, 0.6ml PIPES buffer solution containing, e.g., 60mg/ml glucose oxidase, 15% bovine serum albumin and 1% glutaraldehyde is developed on the wafer. At this time, the buffer solution is 0 deg.C and the wafer is 4 deg.C. The wafer is immediately rotated at 2,000rpm for 30 seconds so that the solution is applied all over the surface of the wafer. After the enzyme film is completely crosslinked through one-hour reaction at 20 deg.C, the wafer is soaked in acetone, whereby the film 6 and the film 7 applied on the film 6 are removed. Thus, the film 7 having uniform thickness can be formed.

Description

【発明の詳細な説明】 (産業上の利用分野) 本発明はバイオセンサの製造方法に関し、特に製造過程
において、ウェハ上に多数の固定化酵素膜が形成されて
なるバイオセンサの製造方法に関する。
DETAILED DESCRIPTION OF THE INVENTION (Field of Industrial Application) The present invention relates to a method for manufacturing a biosensor, and particularly to a method for manufacturing a biosensor in which a large number of immobilized enzyme films are formed on a wafer during the manufacturing process.

(従来の技術) 近年、溶液中の有機物の濃度を測定するバイオセンサを
微小化する試みが多数みられるようになってきた。この
中でも半導体製造技術を利用し、半導体あるいは絶縁物
で形成されたウェハ上に、電界効果型素子などのポテン
ショメトリックなイオンセンサや貴金属電極などのアン
ペロメトノックな電気化学電極を多数形成し、この感応
部に固定化酵素膜を形成してバイオセンサを製造する方
法は、大量生産によりコストが軽ik?れること、−度
に多数の特性を揃ったセンサが得られる可能性があるこ
となどで注目されている(例えば特願昭59−1561
23、実願昭59−134995)。
(Prior Art) In recent years, there have been many attempts to miniaturize biosensors that measure the concentration of organic matter in a solution. Among these, we utilize semiconductor manufacturing technology to form a large number of potentiometric ion sensors such as field effect devices and amperometric electrochemical electrodes such as noble metal electrodes on wafers made of semiconductors or insulators. Is this method of manufacturing a biosensor by forming an immobilized enzyme membrane on the sensitive part low in cost due to mass production? It is attracting attention because it is possible to obtain a sensor with a large number of characteristics at the same time (for example, Japanese Patent Application No. 59-1561).
23, Jitsugan Sho 59-134995).

従来、半導体製造工程においては、フォトレジスト膜な
どの有機薄膜の形成にスピン塗布が多く用いられてきた
。スピン塗布とは、ウェハ上に展開した溶液をウェハを
回転してウェハ上面全体を広げ、厚さの均一な薄膜を形
成する方法である。
Conventionally, in semiconductor manufacturing processes, spin coating has often been used to form organic thin films such as photoresist films. Spin coating is a method in which a solution developed on a wafer is spread over the entire upper surface of the wafer by rotating the wafer, thereby forming a thin film with a uniform thickness.

発明者らは、これを固定化酵素膜の形成にも応用し、酵
素と架橋剤を含んだ蛋白質溶液をウェハ上に展開、回転
させることによって均一な厚さの固走化酵素膜を得るこ
とを試みている(特願昭59−209165)。
The inventors applied this to the formation of an immobilized enzyme membrane, and by spreading a protein solution containing an enzyme and a crosslinking agent on a wafer and rotating it, they were able to obtain an immobilized enzyme membrane of uniform thickness. (Patent application No. 59-209165).

すなわち、半導体電界効果型トランジスタの形成された
ウェハ上にフォトレジストを塗布した後、フォトリソグ
ラフィー法より酵素固定化膜が設けられる所定の半導体
電界効果型イオンセンサの表面のフォトレジストを取り
除き、酵素と架橋剤を含む蛋白質溶液をスピン塗布して
形成して、フォトレジストを溶解除去する際に所定の半
導体電界効果型イオンセンサの表面以外に存在する固定
化酵素膜を除去して酵素膜形成を行なった。
That is, after coating a photoresist on a wafer on which semiconductor field-effect transistors are formed, the photoresist is removed from the surface of a given semiconductor field-effect ion sensor on which an enzyme-immobilized film is provided using a photolithography method. The enzyme film is formed by spin-coating a protein solution containing a crosslinking agent, and when the photoresist is dissolved and removed, the immobilized enzyme film existing on areas other than the surface of the specified semiconductor field effect ion sensor is removed to form an enzyme film. Ta.

(発明が解決しようとする課題) しかしながらこの方法では塗布する溶液の濃度が低い場
合にはかなり均一な膜厚の酵素膜が得られるものの、濃
度が高い場合には、ウェハ上の一部にしか膜が形成でき
ない。あるいは形成できた場合でも、酵素膜がウェハの
中央部と周辺部で厚く、その中間では薄くなって均一な
膜が得られないといった欠点があった。これは、展開す
る溶液が反応性のものであるために溶液の調整、展開の
時間に架橋反応が進行し、溶液の粘性等が変化すること
に起因すると考えられた。
(Problem to be Solved by the Invention) However, with this method, when the concentration of the solution to be applied is low, an enzyme film with a fairly uniform thickness can be obtained, but when the concentration is high, the enzyme film can only be formed on a part of the wafer. A film cannot be formed. Alternatively, even if it can be formed, the enzyme film has the disadvantage that it is thick at the center and periphery of the wafer, and thinner in the middle, making it impossible to obtain a uniform film. This was thought to be due to the fact that the solution to be developed is reactive, so that the crosslinking reaction proceeds during solution preparation and development, resulting in changes in the viscosity, etc. of the solution.

本発明の目的は均一な膜厚の固定化酵素膜を得る方法を
提供することにある。
An object of the present invention is to provide a method for obtaining an immobilized enzyme membrane with a uniform thickness.

(課題を解決するための手段) 本発明は、多数の微小電極が設けられたウエノ1上の特
定の化学感応部位に、酵素と架橋剤を含む蛋白質溶液を
塗布することにより固定化酵素膜を形成する方法におい
て、前記蛋白質溶液をウニ/%上に展開しウェハを回転
させて薄膜を形成する際に、前記ウェハと前記蛋白質溶
液の両方を15℃以下に冷却して展開することを特徴と
する固定化酵素膜の形成方法である。
(Means for Solving the Problem) The present invention forms an immobilized enzyme membrane by applying a protein solution containing an enzyme and a crosslinking agent to a specific chemically sensitive site on Ueno 1, which is provided with a large number of microelectrodes. The forming method is characterized in that when the protein solution is spread on the sea urchin/% and the wafer is rotated to form a thin film, both the wafer and the protein solution are cooled to 15°C or less before being spread. This is a method for forming an immobilized enzyme membrane.

(作用) 蛋白質溶液に架橋剤を添加した溶液を調整する場合、架
橋反応は溶液調整と同時に速やかに進行し、溶液は速や
かにその粘性を増大させる。この反応速度は温度と大き
く関係し、温度を下げることで反応速度を小さくするこ
とが可能である。
(Function) When preparing a solution in which a crosslinking agent is added to a protein solution, the crosslinking reaction proceeds rapidly at the same time as the solution preparation, and the solution rapidly increases its viscosity. This reaction rate is largely related to temperature, and it is possible to reduce the reaction rate by lowering the temperature.

このため、溶液そのものの温度、展開するウェハの)温
度を低く保てば、均一な酵素膜が得やすくなる。溶液の
温度は低いほど反応速度は小さくなるが、また、あまり
低い場合には温度による粘性の増大や、凍結などの問題
を生じる。酵素活性の低下を抑えるためにも酵素溶液の
温度は凍結しない程度に冷やされていてる方がよい。ウ
ェハ自体を冷却することも同様の効果がある。溶液・ウ
ェハはいずれかが冷却されていればある程度の効果は得
られるが、どちらも冷却され、望ましくは、10℃以下
に冷却されていた方が効果的である。
Therefore, if the temperature of the solution itself and the temperature of the wafer being developed is kept low, it becomes easier to obtain a uniform enzyme film. The lower the temperature of the solution, the lower the reaction rate; however, if the temperature is too low, problems such as increased viscosity and freezing may occur. In order to prevent a decrease in enzyme activity, the temperature of the enzyme solution should be kept cool enough to prevent freezing. Cooling the wafer itself has a similar effect. A certain degree of effect can be obtained if either the solution or the wafer is cooled, but it is more effective if both are cooled, preferably to 10° C. or lower.

(実施例) 本発明について図面を参照して説明する。(Example) The present invention will be explained with reference to the drawings.

第3(a)〜(d)は固定化酵素膜の形成プロセスを示
した断面図である。まず、半導体電界効果型イオンセン
サの形成された直径4インチのサファイア基板上にフォ
トレジスト溶液(シラフレー社マイクロポジットMP1
300−37)展開し、3.00Orpmで30秒回転
させたく第3図(a))。これを90℃で30分間プリ
ベークし、フォトマスクを用いて露光・現像により固定
化酵素膜が設けられる部分(150pmX500μm)
のフォトレジスト膜を除去した(第3図(b))。フォ
トレジスト膜の膜厚は3.14±0.09pmであった
。その後、酵素と架橋剤を含む蛋白質溶液の一例として
、グルコースオキシダーゼ60mg/ml、15%牛血
清アルブミン、1%グルタルアルデヒドを含むPIFE
S緩衝液(pH6,8,50mM)0.6mlをウェハ
上に展開した(第3図(C))。このとき、溶液の温度
を0℃、ウェハの温度を4℃〜25℃の各種温度とした
。ただちに200Orpmで30秒回転してウェハ表面
全体に塗布した。ウェハへの膜の密着性を良くするため
に、酵素膜のスピン塗布の前に、プライマー処理を行う
ことも可能である。
3(a) to 3(d) are cross-sectional views showing the process of forming an immobilized enzyme membrane. First, a photoresist solution (Microposit MP1 manufactured by Silafray Co., Ltd.
300-37) Expand and rotate at 3.00 rpm for 30 seconds (Figure 3(a)). This was prebaked at 90°C for 30 minutes, exposed and developed using a photomask to provide the immobilized enzyme membrane (150pm x 500μm).
The photoresist film was removed (FIG. 3(b)). The thickness of the photoresist film was 3.14±0.09 pm. After that, PIFE containing 60 mg/ml of glucose oxidase, 15% bovine serum albumin, and 1% glutaraldehyde was added as an example of a protein solution containing an enzyme and a crosslinking agent.
0.6 ml of S buffer (pH 6, 8, 50 mM) was spread on the wafer (Fig. 3 (C)). At this time, the temperature of the solution was set to 0°C, and the temperature of the wafer was set to various temperatures from 4°C to 25°C. It was immediately rotated at 200 rpm for 30 seconds to coat the entire wafer surface. In order to improve the adhesion of the film to the wafer, it is also possible to perform a primer treatment before spin coating the enzyme film.

20℃で1時間反応させて酵素膜の架橋反応を終了させ
た。この後、ウェハをアセトンに浸しフォトレジストを
溶解し、同時にフォトレジスト上に塗布されていた固定
化酵素膜を除去した(第3図(d))。
The reaction was carried out at 20° C. for 1 hour to complete the crosslinking reaction of the enzyme membrane. Thereafter, the wafer was immersed in acetone to dissolve the photoresist, and at the same time, the immobilized enzyme film coated on the photoresist was removed (FIG. 3(d)).

ウェハ上の直径上の各点での酵素膜の膜厚を測定した結
果、第1図に見られるような膜厚分布が観察された。第
1図1)〜3)はウェハ温度4℃115℃125℃で各
々酵素膜を形成させた場合の膜厚分布を−例として示す
直径上に位置する10個の酵素膜の膜厚をタリステノブ
を用いて測定した。ウェハの温度が低いはど膜厚は均一
になっているのが確認された。また、ウェハ温度25℃
115℃14℃の各々の温度で、形成させた酵素膜の形
状は順次第2図(a)〜(C)に示したが、図からウェ
ハ温度が高い場合には酵素膜は中央が低い形状であるが
、温度が低い場合には、一つの膜の中での膜厚が均一な
良好な膜が得られた。酵素溶液の組成を変えて同様に酵
素膜を形成したところグルタルアルデヒド濃度0.4%
から1,2%においては均一な膜厚の酵素膜が得られた
。また、タンパク質濃度については、BSA濃度が18
%まで酵素膜の形成が可能であるが、特に10%より高
い濃度範囲に於て冷却の効果は著しい。
As a result of measuring the film thickness of the enzyme film at each point on the diameter of the wafer, a film thickness distribution as shown in FIG. 1 was observed. Figure 1 1) to 3) show the film thickness distribution when each enzyme film was formed at a wafer temperature of 4°C, 115°C, and 125°C. Measured using It was confirmed that the film thickness was uniform when the wafer temperature was low. Also, the wafer temperature is 25℃
The shape of the enzyme film formed at each temperature of 115°C and 14°C is shown in Figures 2 (a) to (C) in order.As can be seen from the figure, when the wafer temperature is high, the enzyme film has a shape with a lower center. However, when the temperature was low, a good film with uniform thickness within one film was obtained. When an enzyme film was formed in the same way by changing the composition of the enzyme solution, the glutaraldehyde concentration was 0.4%.
An enzyme film with a uniform thickness was obtained at 1.2%. Regarding the protein concentration, the BSA concentration was 18
Although it is possible to form an enzyme film up to 10%, the effect of cooling is particularly significant in a concentration range higher than 10%.

酵素濃度はタンパク質濃度の30%以下であれば良好な
固定化膜が得られた。酵素の種類を変化させた場合、例
えばウレアーゼやカタラーゼにおいても酵素膜形成時の
冷却効果は同様であった。以上の実験からウェハとタン
パク質の両方を15℃以下に冷却して酵素膜を形成させ
た場合、実用的な意味で均一な膜厚が得られた。但し、
再現性の点から望ましくは10℃以下の冷却が良いこと
が分った。
A good immobilized membrane was obtained when the enzyme concentration was 30% or less of the protein concentration. When the type of enzyme was changed, for example, urease and catalase, the cooling effect during enzyme film formation was similar. From the above experiments, when an enzyme film was formed by cooling both the wafer and the protein to 15° C. or lower, a uniform film thickness was obtained in a practical sense. however,
It has been found that cooling to 10° C. or less is preferable from the viewpoint of reproducibility.

(発明の効果) 以上説明したように本発明は、ウェハ表面スピン塗布に
よって酵素膜形成する際に、蛋白質溶液・ウェハを冷却
しておくことで、均一な膜厚の酵素膜を得られるという
効果がある。さらに、個々の酵素膜についてもこの方法
で形成すれば、厚みの変化の無い良好な膜が得られると
いう効果がある。
(Effects of the Invention) As explained above, the present invention has the advantage that when forming an enzyme film by spin coating on the wafer surface, an enzyme film with a uniform thickness can be obtained by cooling the protein solution and the wafer. There is. Furthermore, if individual enzyme membranes are also formed by this method, there is an effect that good membranes with no change in thickness can be obtained.

【図面の簡単な説明】[Brief explanation of the drawing]

第1図は本発明によるウェハ上での酵素膜の膜厚分布を
示す図。第2図(a)〜(c)は各条件での酵素膜の形
状を示す図。第3図(a)〜(d)は酵素膜形成工程を
示す図である。
FIG. 1 is a diagram showing the film thickness distribution of an enzyme film on a wafer according to the present invention. FIGS. 2(a) to 2(c) are diagrams showing the shape of the enzyme membrane under each condition. FIGS. 3(a) to 3(d) are diagrams showing the enzyme membrane forming process.

Claims (1)

【特許請求の範囲】[Claims] 多数の微小電極が設けられたウェハ上の特定の化学感応
部位に、酵素と架橋剤を含む蛋白質溶液を塗布すること
により固定化酵素膜を形成する方法において、前記蛋白
質溶液をウェハ上に展開しウェハを回転させてウェハ上
面全体に酵素膜を形成する際に、前記ウェハと前記蛋白
質溶液の両方を15℃以下に冷却して展開することを特
徴とする固定化酵素膜の形成方法。
In a method of forming an immobilized enzyme film by applying a protein solution containing an enzyme and a crosslinking agent to a specific chemically sensitive site on a wafer provided with a large number of microelectrodes, the protein solution is spread on the wafer. A method for forming an immobilized enzyme film, characterized in that when the wafer is rotated to form an enzyme film on the entire upper surface of the wafer, both the wafer and the protein solution are cooled to 15° C. or lower and then developed.
JP63325216A 1988-12-22 1988-12-22 Method for forming immobilized enzyme film Pending JPH02168153A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP63325216A JPH02168153A (en) 1988-12-22 1988-12-22 Method for forming immobilized enzyme film

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP63325216A JPH02168153A (en) 1988-12-22 1988-12-22 Method for forming immobilized enzyme film

Publications (1)

Publication Number Publication Date
JPH02168153A true JPH02168153A (en) 1990-06-28

Family

ID=18174322

Family Applications (1)

Application Number Title Priority Date Filing Date
JP63325216A Pending JPH02168153A (en) 1988-12-22 1988-12-22 Method for forming immobilized enzyme film

Country Status (1)

Country Link
JP (1) JPH02168153A (en)

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6188135A (en) * 1984-10-05 1986-05-06 Nec Corp Production of semiconductor biosensor
JPS6330984A (en) * 1986-07-25 1988-02-09 Canon Inc Graphic processor
JPS63182559A (en) * 1987-01-24 1988-07-27 Kanzaki Paper Mfg Co Ltd Production of enzyme electrode
JPS63241346A (en) * 1987-03-27 1988-10-06 Nec Corp Manufacture of planar type biosensor

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6188135A (en) * 1984-10-05 1986-05-06 Nec Corp Production of semiconductor biosensor
JPS6330984A (en) * 1986-07-25 1988-02-09 Canon Inc Graphic processor
JPS63182559A (en) * 1987-01-24 1988-07-27 Kanzaki Paper Mfg Co Ltd Production of enzyme electrode
JPS63241346A (en) * 1987-03-27 1988-10-06 Nec Corp Manufacture of planar type biosensor

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