JPH02163621A - Plasma spectral device - Google Patents

Abstract

PURPOSE:To measure the velocity of sputtering particles and to perform etching control with good precision by indirectly observing the luminescent state of plasma by a reflecting means provided to an incident means. CONSTITUTION:In a vacuum working means 100, while keeping the charged particles 102 as working medium, one part of working material 103 is formed on the surface of material 101 to be worked. Light beam L1 of plasma 104 generated from the vacuum working means 100 is made incident to an incident means 11. A reflecting means 12 is provided to this incident means 11. Therefore when the light beam of plasma is deflected e.g. at 90 deg. by the reflecting means and fetched, the glass window of the incident means 11 can be provided at the position geometrically transferred from the position for viewing directly at plasma. Further material of the surface of the reflecting means 12 is constituted of the material having the same quality as the working material 103. Therefor light intensity of plasma made incident to a spectral means 13 can be stabilized in comparison with the case of forming the reflecting means 12 of the other material. As a result, even when plasma processing treatment is continued for a long time, the luminescent state of plasma can always be observed.

Description

[Detailed Description of the Invention] [(Already required)] Plasma spectroscopy equipment, especially equipment that observes the light emission state of plasma, such as various sputtering equipment that performs film formation or etching using plasma, ion blating equipment, and t'-lye sodging equipment. Regarding target atoms, etc., which indirectly captures the light without providing a glass window or lens to capture the light at a position where the plasma light is directly viewed, and which fly toward such an input means. With the aim of suppressing the effects of In the plasma spectrometer, the input means is provided with a reflection means for reflecting the plasma light, and the reflection means has a surface material that is made of a material of the surface of the reflection means. ,
The second device is configured to be a material of the same quality as the processing material formed on the surface of the workpiece, and the second device is configured to use charged particles as a processing medium to form part of the processing material formed on the surface of the workpiece. In a plasma spectroscopy apparatus comprising an input means for inputting plasma light of a vacuum processing means for partially or completely peeling, and a spectroscopy means for separating the incident plasma light, the plasma light is A reflecting means is provided for reflecting the light, and the material of the surface of the reflecting means is the same as the workpiece Fi formed on the surface of the workpiece.
It is composed of the same material as T.

[Industrial application field]

The present invention relates to a plasma spectrometer, and more specifically, to a device for observing the light emission state of plasma, such as various sbank devices, ion blating devices, and dry etching devices that perform film formation and etching using plasma. It is.

In recent years, in aluminum wiring processes, magnetic disk processes, tri-etching processes, etc., charged particles such as Ar'' ions and electrons are bombarded with target materials such as aluminum and cobalt chromium, and the surfaces of silicon and glass substrates are exposed to A method of depositing these materials or a method of etching them has been implemented.

In addition to controlling the plasma generation power and gas pressure, this film formation or etching is controlled by capturing the plasma light in the vacuum application device into a spectrometer to measure, for example, the speed and density of sputtered particles. This is done by

However, when plasma processing is performed for a long time, the glass window that takes the plasma light into the spectrometer becomes contaminated.
There is a problem that light is no longer transmitted, which adversely affects control of film formation and etching.

Therefore, even if plasma processing continues for a long time,
There is a need for a plasma spectrometer that can observe the emission state of plasma.

[Conventional technology]

FIGS. 6(a) and 6(b) are explanatory diagrams of a conventional plasma spectrometer.

FIG. 1A shows a configuration diagram of a plasma spectrometer in which an input means for taking in plasma light is provided on the side surface of a chamber of a vacuum processing apparatus.

In the diagram, 1 is plasma light! , vacuum oil] - provided on the side of the device 3a.

The entrance means 1 consists of a glass window 1a, a lens 1b, and the like.

2 is a spectrometer, which is used to observe the emission state of plasma.

3 is a vacuum processing device such as a sputtering device, which includes a chamber 3a, an anode electrode P1 and a cathode electrode K.

It consists of 4 DC electric currents. Pl is plasma, which is obtained by creating a vacuum state in the chamber and applying a DC voltage between the anode electrode P and the cathode electrode.

6 is a target atom, 67 is a semiconductor such as aluminum or cobalt chromium, and
Aluminum wiring, magnetic disks, etc. are formed thereon.

The figure inside the broken line circle in the figure is an enlarged sectional view of the glass window 18 portion of the entrance means 1. In the figure, 6a is a Kugett atom flying toward the injection means 1. This is because when the target material 1'46 is bombarded with Ar'' ions, some of the flying components of the target atoms flying out from the target material 6 do not fly out from the 1'' electrode K to the anode electrode P. , scattered in the direction of the incident means 1.

6b is a target atom attached to the glass window ]b, which prevents the transmission of plasma light [-]. The target atoms 6b adhere to the surface of the glass window 1a in proportion to the processing time for applying vacuum.

FIG. 2B shows a configuration diagram of a plasma spectrometer in which an input means for taking in plasma light is provided in a sensor of a vacuum processing apparatus.

In the figure, reference numeral 8 denotes an input means for taking in plasma light, which is composed of a lens 8a and an optical fiber 8b, and the taken-in plasma light I is propagated to a spectrometer 9.

Moreover, the figure inside the broken line circle in the same figure is an enlarged sectional view of the lens 8a portion of the entrance means 8.

In the figure, 6a is a target atom flying towards the injection means 8. 6b is a Kugent atom attached to the surface of the lens 8a, which prevents the plasma light I from passing through.

[Problem to be solved by the invention]

By the way, according to the conventional example, the glass window]a of the entrance means 1 which takes in the plasma light 1, and the lens 8a of the entrance means 8
In both cases, the plasma light 17 is viewed directly, that is, the glass window 1a and the lens 8a are located directly in front of the plasma PL.

For this reason, as shown in the diagrams inside the circles with broken lines in FIGS.
may be deposited on the surface of the glass window 1a or lens 8a.

As a result, there is a problem that the light of the plasma PL cannot be efficiently taken into the spectrometer, and the light emission state of the plasma PL cannot be monitored.

The present invention was created in view of the problems of the conventional example, and it takes in the light indirectly without providing a glass window or lens to take in the light at a position where the plasma light is directly viewed. It is also an object of the present invention to provide a plasma spectroscopy device that makes it possible to suppress the influence of target particles flying toward the entrance means.

Means for Solving the Problem C] FIGS. 1(a) and 1(b) show a principle diagram of the plasma spectrometer of the present invention.

The first device uses light L of plasma 104 generated from a vacuum processing means 100 that uses charged particles 102 as a processing medium to form a part of processing material 103 on the surface of a workpiece 101.
1] and the incident plasma 10
In the plasma spectrometer, the reflection means 13 for reflecting the light L1 of the plasma 104 is provided in the input means 11, and the material of the surface of the reflection means 13 is , characterized in that the material is the same as the material to be processed 103 formed on the surface of the workpiece 101, and the second device is used to form the material on the surface of the workpiece 201 using the charged particles 202 as a processing medium. Plasma 204 of vacuum processing means 200 that peels off part or all of processing material 203
In the plasma spectrometer, the plasma spectrometer includes an input means 21 for inputting the light L2 of the plasma 204, and a spectrometer 23 for separating the input light L2 of the plasma 204. A reflecting means 23 is provided, and the material of the surface of the reflecting means 23 is the same as that of the workpiece 20.
The processed material 103 or 203 is characterized by having the same material as the processed material *'l 203 formed on the surface of the processed material 103 or 203. The processed material 103 or 203 is characterized by having an appropriate reflectance.

[Effect]

According to the first device of the invention, the input means 11 is provided with a reflection means 12 .

For this reason, if the plasma light is taken in by the reflection means 12 with a deflection of, for example, 90 degrees, the glass window, lens, etc. of the input means 11 will be at a position geometrically shifted by 90 degrees from the position where the plasma is directly viewed. can be provided.

This makes it possible to indirectly observe the emission state of plasma.

Further, according to the first device of the present invention, the surface material of the reflecting means 12 is made of the same material as the processing material 103.

Therefore, compared to the case where the reflection means 12 is made of other materials, it is possible to stabilize the light intensity of the plasma incident on the spectroscopic means 13.

According to the second device of the invention, the input means 21 is provided with a reflection means 22 .

Therefore, similarly to the first device, it is possible to indirectly observe the light emission state of plasma.

Further, according to the second device of the present invention, the surface material of the reflecting means 22 is made of the same material as the processed material 203.

This makes it possible to stabilize the light intensity similarly to the reflecting means 12 of the first device.

As a result, even if plasma processing continues for a long time, it is possible to constantly observe the emission state of the plasma, measure the velocity and density of the subafuta particles, and control film formation and etching with high precision.

〔Example〕

Next, embodiments of the present invention will be described with reference to the drawings.

2 to 5 are diagrams for explaining a plasma spectrometer according to an embodiment of the present invention, and FIG. 2 shows a configuration diagram of a plasma spectrometer according to a first embodiment of the present invention. .

In the figure, 30 is a spackle device, and a chamber 30
a, anode electrode P, cathode electrode K, DCCri, 3
Consists of 4. P l-,1 is plasma, which is obtained by creating a vacuum state in the tank 30a and applying a DC voltage between the anode electrode P and the cathode electrode. Reference numeral 31 denotes an entrance means, which includes a glass 31a and a lens 31.
Consists of b. A mirror 32 is an example of a reflecting means, and has the function of deflecting the plasma light L1 by 90 degrees and making it incident on the glass window 31a. In addition, mirror 3
The method for forming 1a will be described in detail in FIG. 5(a).

33 is a spectrometer, and plasma P1. , 1 light 1.1
This spectroscopy is used to observe the state of plasma emission.

36 is a target, which is a metal processing material such as aluminum or cobalt chromium (COCr).

Reference numeral 37 denotes a substrate, which is a semiconductor substrate on which aluminum wiring is formed, a glass substrate on which magnetic disks, etc. are formed.

As a result, the plasma PLI light L of the vacuum processing equipment is used to form a part of processing materials such as M and COCr on the surface of the substrate using Δr゛ ions obtained by ionizing the ^r gas 35 as a processing medium.
1 is monitored.

Here, the same material as the target 36 formed on the substrate 37 is used for the surface of the mirror 32. For example, if target 36 is sequential, the surface of mirror 32 is sequential.

In this way, the mirror 32 is provided on the entrance means 31.

For this reason, if the light L1 of the plasma PLI is taken in with the mirror 32 deflecting it by 90 degrees, for example, the incident means 3
The glass window 31a, the lens 31b, etc. of the plasma generator 1 can be provided at a position geometrically shifted by 90 degrees from the position where the plasma is directly viewed.

This makes it possible to indirectly observe the emission state of plasma.

Further, according to the first embodiment, the surface of the mirror 32 is made of the same material as the target 36.

This makes it possible to stabilize the light intensity of the plasma PLI light L1 incident on the spectroscopic means 33, compared to the case where the mirror 32 is made of other materials. The relationship between light intensity and processing time will be explained in FIG. 5(b).

FIG. 3 shows a configuration diagram of a plasma spectrometer according to a second embodiment of the present invention.

In the figure, the difference from the first embodiment is that in the second embodiment, the vacuum processing device uses charged particles as a processing medium to peel off part or all of the processing material formed on the surface of the workpiece. It is something to do.

That is, 40 is a dry etching device, and chi+7
C 40a, RF power source 44, RF electrode 46, counter electrode 48
and the exhaust port 49, aPL2 is plasma, which is obtained by creating a vacuum state in the chamber 40a and supplying high frequency power between the RF electrode 46 and the counter electrode 48.

41 is an entrance means, 32 is a mirror, and 33 is a spectrometer, whose functions are the same as in the first embodiment.

47 is a workpiece, such as a semiconductor wafer with M formed on its surface.

As a result, the light L2 of the plasma PL2 of the vacuum processing apparatus which peels off part or all of the workpiece t'4 such as M of the workpiece 47 using the processing medium in which the gas 45 is ionized is monitored.

Here, the material for the surface of the mirror 42 is the same as the processed material, such as M, which is to be peeled off.

In this way, the mirror 42 is provided on the input means 41.

Therefore, as in the first embodiment, the plasma P
It becomes possible to observe the light emission state of L2.

According to the second embodiment, the surface of the mirror 42 is made of the same material as the workpiece 47 to be dry etched.

This makes it possible to stabilize the light intensity of the light L2 of the plasma P L 1 that enters the spectroscope 43 similarly to the mirror 32 of the first embodiment.

FIGS. 4(a) and 4(b) are explanatory diagrams of a plasma spectrometer according to a third embodiment of the present invention, and FIG. 4(a) shows a configuration diagram thereof.

In the same figure (a), 50 is a vacuum processing device, such as a sputtering device 30 and a dry etching device 40.5
1 is an entrance means provided in the vacuum processing apparatus 50,
lens 51a and optical fiber 511] and a mirror 52. The optical fiber 51b connects the input means 51 and the spectrometer 5.
3. 53 is a spectroscope. Since each function is the same as that of the twelfth embodiment, explanation thereof will be omitted.

FIG. 5B is an enlarged view of the entrance means 51.

In the figure, the mirror 52 is connected to the plasma P L I or PL
The material of the mirror 52 is similar to the twelfth embodiment, so that the target atoms and etching atoms flying into the vacuum processing apparatus 50 are Use the same quality.

FIGS. 5(a) and 5(b) are explanatory diagrams according to an embodiment of the present invention, and FIG. 5(a) shows a configuration diagram of the reflecting means.

In the same figure (a), 21a is a glass substrate;
．． b is a reflective object having a suitable reflectance P, and is of the same quality as target atoms or etching atoms during sputtering or dry etching processing. Moreover, the glass substrate 21. The method for forming the reflective object 21b on the surface a is performed by sputtering or the like.

FIG. 2B shows a characteristic diagram comparing the plasma light that can be introduced into the incident means of the present invention and the conventional example.

In the figure, the vertical axis represents the light intensity I of the plasma, and the horizontal axis represents the processing time T. A is a characteristic of the present invention, and indicates that the light intensity of the plasma light that can be taken into the input means is constant with respect to the processing time T in a vacuum processing device such as a sputtering device or a dry etching device. There is.

B is a characteristic of the conventional example, and indicates that the plasma light intensity I decreases as the processing time T increases.

In this way, according to the present invention, even if plasma processing continues for a long time, the mirror 32 is attached to the incident means 31 and 41.
By arranging the light beams L1 and L2 of the plasma P Ll and PL2 to be taken into the spectrometers 43 and 53 in a stable state, by arranging them and making the materials the same as those of the target atoms and the etching atoms. .

In addition, in the first embodiment of the present invention, a vacuum processing apparatus such as a sputtering apparatus was explained, but it can also be applied to an ion blating apparatus that deposits metal or the like on a workpiece using an electron beam or the like. .

〔Effect of the invention〕

As described above, according to the present invention, the light emission state of plasma can be indirectly observed by the reflection means provided in the incidence means.

Further, according to the present invention, plasma light can always be taken into the input means in a stable state regardless of the processing time.

This makes it possible to measure the speed and density of sputtered particles and control film formation and etching with high precision.

[Brief explanation of the drawing]

FIGS. 1(a) and (b) are principle diagrams of a plasma spectrometer according to the present invention, FIG. 2 is a configuration diagram of a plasma spectrometer according to a first embodiment of the present invention, and FIG. A configuration diagram of a plasma spectrometer according to a second embodiment of the present invention, FIGS. 4(a) and (b) are explanatory diagrams of a plasma spectrometer according to a third embodiment of the present invention, and FIG. FIGS. 6A and 6B are explanatory diagrams of each embodiment of the present invention, and FIGS. 6A and 6B are explanatory diagrams of a conventional plasma spectrometer. (Explanation of symbols) 1.8.11, 21, 31.41.51...Incidence means, 12.22.32,42.52...Reflection means (mirror), 2 9 13, 23. 33. 43. 53・
... Spectroscopic means (spectroscope), 3 50, ioo, 200 - Vacuum processing means (vacuum processing equipment), 47.103,203 ... Workpiece, 102.202
...Charged particles, 103203...IJI+engineering materials, PL PLl, PI=2 104.204...
Plasma, 30... Sputtering device, 3a, 30a, 40a... Chamber, 1, a, 3]a
, 41a...Glass window, lb 8a, 31b, 41
b, 51a4.34...DC power supply, 5.35...Ar gas, 6 36 46...Target, 7.37...Substrate, 40...Dry etching device, 44...RF power supply , 45... Gas, lens, 48... Counter electrode, 49... Exhaust port, 8b, 51b... Optical fiber, 21, a... Glass substrate, 21b... Reflective object, 6a. ...Target atom, 6b...Adhered target atom, 1, Ll, L2...Plasma light, P...Anode electrode, K...Cathode electrode, A...Characteristics of the present invention, B ...Characteristics of the conventional example.

Claims (2)

[Claims] (1) Plasma (10
4) A plasma spectrometer comprising an input means (11) for inputting the light (L1) and a spectrometer (13) for spectrally dispersing the light (Li) of the input plasma (104), wherein the input means In (11), the light (
A reflecting means (13) for reflecting Li) is provided, and the material of the surface of the reflecting means (13) is the same as that of the workpiece (
A plasma spectrometer characterized in that the material is the same as the processing material (103) to be formed on the surface of (101). (2) Plasma (204) of the vacuum processing means (200) that uses charged particles (202) as a processing medium to peel off part or all of the processing material (203) formed on the surface of the workpiece (201) input means (21) for inputting the light (L2) of
In the plasma spectroscopy apparatus, the plasma (204) is injected into the incident means (21), and a spectroscopic means (23) for spectrally spectroscopy the light (L2) of the incident plasma (204).
) is provided with a reflecting means (23) that reflects the light (L2) of the workpiece (2), and the material of the surface of the reflecting means (23)
A plasma spectrometer characterized in that the material is the same as the processed material (203) formed on the surface of the plasma spectrometer (203).