JPH0216006B2 - - Google Patents
Info
- Publication number
- JPH0216006B2 JPH0216006B2 JP59109475A JP10947584A JPH0216006B2 JP H0216006 B2 JPH0216006 B2 JP H0216006B2 JP 59109475 A JP59109475 A JP 59109475A JP 10947584 A JP10947584 A JP 10947584A JP H0216006 B2 JPH0216006 B2 JP H0216006B2
- Authority
- JP
- Japan
- Prior art keywords
- wafer
- basket
- drying
- gas
- pipe
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 238000001035 drying Methods 0.000 claims description 75
- 238000007664 blowing Methods 0.000 claims description 29
- 238000004140 cleaning Methods 0.000 claims description 19
- 239000007788 liquid Substances 0.000 claims description 16
- 238000004519 manufacturing process Methods 0.000 claims description 6
- 239000004065 semiconductor Substances 0.000 claims description 4
- 239000007789 gas Substances 0.000 description 73
- 235000012431 wafers Nutrition 0.000 description 58
- 230000000694 effects Effects 0.000 description 8
- 238000000034 method Methods 0.000 description 7
- 239000004809 Teflon Substances 0.000 description 5
- 229920006362 Teflon® Polymers 0.000 description 5
- 239000000428 dust Substances 0.000 description 4
- 239000011521 glass Substances 0.000 description 4
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 238000007667 floating Methods 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 230000003014 reinforcing effect Effects 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
- 238000010897 surface acoustic wave method Methods 0.000 description 1
- 238000011282 treatment Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
- H01L21/67034—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for drying
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Cleaning Or Drying Semiconductors (AREA)
Description
【発明の詳細な説明】
〔産業上の利用分野〕
本発明は、半導体素子や、集積回路素子（IC，
LSI）、磁気バブルメモリ素子、弾性表面波素子
などの製造技術に関し、特にこれらの素子に基板
であるウエハーの洗浄後の乾燥の方法及び装置に
関するものである。[Detailed Description of the Invention] [Field of Industrial Application] The present invention is applicable to semiconductor devices and integrated circuit devices (IC,
The present invention relates to manufacturing technology for LSI (LSI), magnetic bubble memory devices, surface acoustic wave devices, etc., and particularly to methods and apparatus for drying wafers, which are the substrates for these devices, after cleaning.
上記の如き素子は、ウエハーに種々の処理を施
した後、チツプに切断され、個々の素子として製
作される。ウエハーはその表面が汚れているとそ
の後の処理あるいは素子特性に悪影響があるので
洗浄が不可欠であるが、一方では洗浄後の乾燥が
不完全だと種々の不具合が生じるので、乾燥を完
全にすることが必要である。 The above devices are manufactured as individual devices by subjecting the wafer to various treatments and then cutting it into chips. It is essential to clean the wafer because if the surface of the wafer is dirty, it will have a negative effect on subsequent processing or device characteristics. On the other hand, if the wafer is not completely dried after cleaning, various problems will occur, so it is necessary to completely dry the wafer. It is necessary.
従来のウエハーの乾燥方法として、ウエハーを
バスケツトに入れて洗浄液で洗浄した後、バスケ
ツトごと乾燥炉に入れて熱乾燥させる方法があ
る。
As a conventional method for drying wafers, there is a method in which the wafers are placed in a basket, cleaned with a cleaning liquid, and then placed together with the basket in a drying oven for thermal drying.
しかるにこの方法では、ウエハーがバスケツト
に数点（一般に３点）で接触して支持されている
ため、この接触部分の乾燥効果が悪く、洗浄液の
滴が残つてしまうという問題点がある。 However, in this method, since the wafer is supported by contacting the basket at several points (generally three points), there is a problem in that the drying effect of these contact areas is poor and droplets of cleaning liquid remain.
このウエハとバスケツトの接触部分では、バス
ケツト自体をなす耐熱ガラスやテフロン等の物質
の微小片あるいはこのバスケツト表面に付着した
微小な塵や、乾燥時にウエハ周辺の雰囲気中に含
まれている浮遊塵がウエハ表面に残る水分中に取
り込まれて、乾燥時にウエハに付着しやすい。水
分が乾くのが遅い部分には、この塵が集められ、
この水分中に取り込まれる微小な塵は、乾燥に時
間がかかるとそれだけ多くなりがちである。した
がつて前記説明した液滴の残余が発生するこの接
触部分では、乾燥後にウエハ表面にしみが残りや
すい。このしみのできる部分は、半導体チツプと
して使用できなくなり、無駄ができてしまう。面
積としては微小であるが、ウエハは高価なもので
あるから、同じ工程、装置を用いた場合には量産
レベルでは多大な損害になる。したがつて、この
ような液滴の蒸発しにくい箇所をできなくし、こ
のようなしみの発生を防止できる製造方法の提供
が待ち望まれる。 At the contact area between the wafer and the basket, minute particles of materials such as heat-resistant glass and Teflon that make up the basket itself, minute dust attached to the surface of the basket, and floating dust contained in the atmosphere around the wafer during drying are present. It is easily absorbed into the moisture remaining on the wafer surface and adheres to the wafer during drying. This dust collects in areas where moisture dries slowly,
The more time it takes for drying, the more microscopic dust will be incorporated into this moisture. Therefore, in this contact area where the droplet residue described above is generated, stains are likely to remain on the wafer surface after drying. This stained area cannot be used as a semiconductor chip and is wasted. Although the area is minute, wafers are expensive, so if the same process and equipment are used, there will be a huge loss in mass production. Therefore, it is desired to provide a manufacturing method that can prevent the occurrence of such stains by eliminating areas where such droplets are difficult to evaporate.
本発明によれば、上記の問題点を解決するため
に、半導体素子製造用のウエハーをバスケツトに
入れて液体洗浄後、バスケツトごと乾燥炉に入れ
て熱乾燥させるウエハーの乾燥方法において、該
乾燥炉内で、前記ウエハーと前記バスケツトの接
触部分に近接した位置にガスの吹出し口を設け、
該ガスの吹出し口より吹き出したガスが該接触部
分に局部的に集中するようにガスを吹きつけなが
ら乾燥を行うことを特徴とするウエハーの乾燥方
法が提供される。
According to the present invention, in order to solve the above-mentioned problems, in a wafer drying method in which wafers for manufacturing semiconductor devices are placed in a basket, washed with liquid, and then placed in a drying oven together with the basket for thermal drying, the drying oven is heated. a gas outlet is provided in a position close to a contact portion between the wafer and the basket;
There is provided a method for drying a wafer, characterized in that drying is performed while blowing gas so that the gas blown out from the gas outlet is locally concentrated on the contact area.
また、本発明によれば、ウエハーをバスケツト
に入れて液体洗浄後、バスケツトごと熱乾燥炉に
入れて乾燥するようにしたウエハーの乾燥装置に
おいて、前記バスケツトを乾燥炉内で支持する支
持枠の一部が前記ガス吹き出し管として構成さ
れ、該ガス吹き出し管は、前記ウエハーとバスケ
ツトの接触部分に近接する位置にガス吹出し口を
有すると共に、前記ガス吹出し管にガス供給源を
接続したことを特徴とするウエハーの乾燥装置が
提供される。 Further, according to the present invention, in a wafer drying apparatus in which wafers are placed in a basket, washed with liquid, and then placed in a thermal drying oven for drying, one of the support frames that supports the basket in the drying oven is provided. The gas blowing pipe is configured as the gas blowing pipe, and the gas blowing pipe has a gas blowing port in a position close to the contact portion between the wafer and the basket, and a gas supply source is connected to the gas blowing pipe. A wafer drying apparatus is provided.
更にまた、本発明によれば、ウエハーをバスケ
ツトに入れて液体洗浄後、バスケツトごと乾燥炉
に入れて熱乾燥するようにしたウエハーの乾燥装
置において、前記バスケツトの少なくともウエハ
ーを支承する部分がパイプで形成され、該パイプ
部分は前記ウエハーとの接触部分にガス吹出し口
が形成されていると共に、ガス供給源に着脱自在
に接続可能であることを特徴とするウエハーの乾
燥装置が提供される。 Furthermore, according to the present invention, in the wafer drying apparatus in which wafers are placed in a basket, washed with liquid, and then placed in a drying oven for thermal drying, at least a portion of the basket that supports the wafer is a pipe. There is provided a wafer drying apparatus, characterized in that the pipe portion is formed with a gas outlet at a portion in contact with the wafer, and is detachably connectable to a gas supply source.
上記の乾燥方法によれば、ウエハーとバスケツ
トの接触部分へのガスの吹きつけによりこの部分
に残つている洗浄液が効率的に蒸発し、乾燥効果
が高められる。
According to the above drying method, by blowing gas onto the contact area between the wafer and the basket, the cleaning liquid remaining in this area is efficiently evaporated and the drying effect is enhanced.
また上記の２つの乾燥装置のうち前者の装置で
は、ガスは乾燥炉内に設けたガスケツトとは別個
のガス吹出し管から吹き出されてウエハーとバス
ケツトの接触部分に吹きつけられる。また上記後
者の装置では、ガスはバスケツト自体に形成した
ガス吹出し口から直接ウエハーとの接触部分に吹
きつけられる。 In the former of the two drying apparatuses mentioned above, gas is blown out from a gas blowing pipe separate from the gasket provided in the drying oven and blown onto the contact area between the wafer and the basket. In the latter device, the gas is blown directly onto the contact area with the wafer from a gas outlet formed in the basket itself.
以下、図面を参照して本発明の実施例を詳細に
説明する。
Embodiments of the present invention will be described in detail below with reference to the drawings.
第１図から第５図は本発明によるウエハーの乾
燥装置の第１実施例及びこの装置を用いたウエハ
ーの乾燥方法を示す。第１図はウエハー乾燥中の
乾燥装置の一部破断斜視図であり、図中、符号１
がウエハー、２が乾燥炉、３がバスケツト、４が
ガス吹出し部材、５がガス供給管を示す。 1 to 5 show a first embodiment of a wafer drying apparatus according to the present invention and a wafer drying method using this apparatus. FIG. 1 is a partially cutaway perspective view of the drying apparatus during wafer drying, and in the figure, reference numeral 1
2 is a wafer, 2 is a drying oven, 3 is a basket, 4 is a gas blowing member, and 5 is a gas supply pipe.
乾燥炉２は、ヒーター（コイル）２ａで加熱し
てウエハー１を乾燥させる型式のものである。 The drying oven 2 is of a type that dries the wafer 1 by heating with a heater (coil) 2a.
バスケツト３は耐熱ガラスもしくはテフロン
（登録商標）等から作られており、第２図に示す
ように３本の棧３１，３２，３３と、これらの棧
を結合する結合板３４，３５と、掛具３６を有す
る。そして横棧３１，３２にはそれぞれ複数の切
欠部３７が形成され、底棧３３には複数のスリツ
ト３８が形成されている。ウエハー１は、それの
フアセツト部を底棧３３に、また両側部を横棧３
１，３２の切欠部３７にそれぞれ接触させた状態
でバスケツト３に入れられ、そしてバスケツト３
を掛具３６の部分で吊り上げてそれごと洗浄液槽
に入れて洗浄される。 The basket 3 is made of heat-resistant glass or Teflon (registered trademark), and as shown in FIG. It has a tool 36. A plurality of notches 37 are formed in each of the side legs 31 and 32, and a plurality of slits 38 are formed in the bottom leg 33. The wafer 1 has its facet part on the bottom rung 33 and both sides on the side rung 33.
It is put into the basket 3 in a state where it is in contact with the notches 37 of 1 and 32, respectively, and then the basket 3
is lifted up by the hook 36 and placed in a cleaning liquid tank for cleaning.
ガス吹出し部材４は、バスケツト３と同様に耐
熱ガラスもしくはテフロン等から作られており、
第４図に示すようにバスケツト３の棧３１，３
２，３３にそれぞれ対応するガス吹出し管４１，
４２，４３と、これらのガス吹出し管を結合する
結合棒４４，４５から構成されている。このガス
吹出し部材４はバスケツト支持枠を兼ねるもので
あり、第１図に示す如く乾燥炉２内に収容され、
そして第４図に明示する如くバスケツト３をそれ
ぞれの掛具３６の部分で支持枠４の結合棒４４，
４５の中央凹部に係合させて着脱自在に支持する
ことができるようになつている。再び第３図を参
照するに、ガス吹出し部材４のガス吹出し管４
１，４２，４３にはガス吹出し穴４６が形成され
ている。これらの穴４６は第４図及びそれのＸ−
Ｘ矢視断面図である第５図に示すようにバスケツ
ト３の横棧３１，３２の切欠部３７および底棧３
３のスリツト３８とそれぞれ対応する位置、つま
りウエハー１とバスケツト棧３１，３２，３３と
の接触部分Ｐに近接する位置に形成され、各ガス
吹出し管４１，４２，４３のガス供給口４７，４
８，４９から供給されたガスＧがこれらの穴４６
から吹き出して接触部分Ｐに吹きつけられるよう
になつている。 The gas blowing member 4, like the basket 3, is made of heat-resistant glass or Teflon.
As shown in Figure 4, the legs 31, 3 of basket 3
Gas blow-off pipes 41, corresponding to 2 and 33, respectively;
42, 43, and connecting rods 44, 45 that connect these gas blowing pipes. This gas blowing member 4 also serves as a basket support frame, and is housed in the drying oven 2 as shown in FIG.
Then, as shown clearly in FIG.
45, and can be detachably supported. Referring again to FIG. 3, the gas blowing pipe 4 of the gas blowing member 4
1, 42, and 43 have gas blowing holes 46 formed therein. These holes 46 are shown in FIG.
As shown in FIG. 5, which is a sectional view taken along the
The gas supply ports 47, 4 of each gas blowing pipe 41, 42, 43 are formed at positions corresponding to the slits 38 of No. 3, that is, positions close to the contact portions P between the wafer 1 and the basket rods 31, 32, 33.
Gas G supplied from 8 and 49 flows through these holes 46.
It is designed so that it can be blown out and sprayed onto the contact area P.
ガス供給管５はテフロン等で作られており、ガ
ス供給源（図示せず）に接続されていると共に、
枝管を介してガス吹出し部材４のガス供給口４
７，４８，４９に接続されている。尚、ガスとし
ては、空気の他、窒素、酸素など種々のガスを用
いることができる。 The gas supply pipe 5 is made of Teflon or the like, and is connected to a gas supply source (not shown).
Gas supply port 4 of gas blowing member 4 via branch pipe
7, 48, and 49. Note that as the gas, various gases such as nitrogen and oxygen can be used in addition to air.
次に上記の乾燥装置を用いたウエハーの乾燥方
法を説明する。まず、乾燥装置は予め乾燥炉２内
をヒーター２ａで加熱しておくと共に、ガス吹出
し部材４を炉内に設置してこれにガス供給管５を
接続し、ガス吹出し口４６からガスＧを常時吹き
出させた状態にする。そして、洗浄後のウエハー
１をバスケツト３ごと乾燥炉２内に入れ、ガス吹
出し部材４上にセツトする。これによりウエハー
１は、第５図に示す如くガス吹出し部材４のガス
吹出し口４６から吹き出されたガスＧがウエハー
１とバスケツト３の接触部分Ｐに吹きつけられた
状態で、炉内の熱により乾燥される。このガス吹
きつけにより接触部分Ｐに残つている洗浄液の滴
の蒸発効果が高められ、単に熱乾燥だけによる場
合のように洗浄液が残ることがなく、ウエハー１
は完全に乾燥される。尚、ガスは常温でも良い
が、炉内温度程度の温度のガスを用いれば乾燥効
果が一層高められることは云うまでもない。 Next, a method of drying a wafer using the above drying apparatus will be explained. First, in the drying device, the inside of the drying furnace 2 is heated in advance with the heater 2a, and the gas blowing member 4 is installed in the furnace and the gas supply pipe 5 is connected to it, so that the gas G is constantly supplied from the gas blowing port 46. Leave it blown out. Then, the cleaned wafer 1 and the basket 3 are put into the drying oven 2 and set on the gas blowing member 4. As a result, the wafer 1 is heated by the heat in the furnace, with the gas G blown out from the gas outlet 46 of the gas blowing member 4 being blown onto the contact portion P between the wafer 1 and the basket 3, as shown in FIG. dried. By this gas blowing, the evaporation effect of the cleaning liquid drops remaining on the contact portion P is enhanced, and the cleaning liquid does not remain as in the case of simply thermal drying, and the wafer 1
is completely dried. Although the gas may be at room temperature, it goes without saying that the drying effect can be further enhanced by using a gas at a temperature similar to the temperature inside the furnace.
さて次に、本発明による乾燥装置の第２実施例
について説明する。第２実施例は概略的には、上
記第１実施例と異なり、乾燥炉内にガス吹出し管
を特別に設けるのではなく、バスケツトそれ自体
にガス吹出し口を設けるものである。第６図はか
かるバスケツトの一実施例の斜視図であり、この
バスケツト６は耐熱ガラスまたはテフロンで形成
されたパイプ部分６１および補強棒６２から成つ
ている。パイプ部分６１はウエハー１を支承する
３本の棧６３，６４，６５を有しており、これら
の棧にはガス吹出し口６６が形成されている。ウ
エハー１はこのガス吹出し口６６に係合する状態
で棧６３，６４，６５にセツトされる。またパイ
プ部分６１はガス供給口６７を有し、これにガス
供給管５が着脱自在に接続されるようになつてい
る。更に、パイプ部分６１の底面には、ウエハー
洗浄時に入る洗浄液を抜くための水抜き穴６８を
形成してある。 Next, a second embodiment of the drying apparatus according to the present invention will be described. The second embodiment is generally different from the first embodiment in that a gas outlet is provided in the basket itself, rather than a gas outlet pipe being specially provided in the drying oven. FIG. 6 is a perspective view of one embodiment of such a basket, which consists of a pipe section 61 and reinforcing rods 62 made of heat-resistant glass or Teflon. The pipe portion 61 has three legs 63, 64, and 65 for supporting the wafer 1, and a gas outlet 66 is formed in each of these legs. The wafer 1 is set on the legs 63, 64, and 65 in a state where it is engaged with the gas outlet 66. The pipe portion 61 also has a gas supply port 67 to which the gas supply pipe 5 is detachably connected. Furthermore, a drain hole 68 is formed in the bottom of the pipe portion 61 for draining the cleaning liquid that enters during wafer cleaning.
かかるバスケツト６を用いるウエハーの洗浄及
び乾燥方法は、ウエハー１をバスケツト６にセツ
トして洗浄後、バスケツト６ごと乾燥炉２（第１
図）に入れる。そしてバスケツト６にガス供給管
５を接続し、ガス吹出し口６６からガスＧを吹き
出させながら、ヒーター２ａ（第１図）で加熱乾
燥させる。これによりガス吹出し口６６から吹き
出すガスが、ウエハー１とバスケツト６との接触
部分、つまりガス吹出し口６６の近傍部分に吹き
つけられ、その部分の洗浄液の滴が蒸発して、完
全な乾燥が行われる。乾燥後は、バスケツト６か
らガス供給管５を外した上で、バスケツト６を炉
２から取り出す。 A wafer cleaning and drying method using such a basket 6 includes setting the wafer 1 in the basket 6, cleaning it, and then moving the basket 6 together with the drying oven 2 (the first drying oven 2).
Figure). Then, the gas supply pipe 5 is connected to the basket 6, and while the gas G is blown out from the gas outlet 66, it is heated and dried using the heater 2a (FIG. 1). As a result, the gas blown out from the gas outlet 66 is blown onto the contact area between the wafer 1 and the basket 6, that is, the area near the gas outlet 66, and the droplets of the cleaning liquid in that area are evaporated, resulting in complete drying. be exposed. After drying, the gas supply pipe 5 is removed from the basket 6, and then the basket 6 is taken out from the furnace 2.
尚、洗浄時にバスケツト６のパイプ部分６１内
に入つた洗浄液は水抜き穴６８から排出されるの
で、ガスによる乾燥効果は保持される。 Incidentally, since the cleaning liquid that has entered the pipe portion 61 of the basket 6 during cleaning is discharged from the drain hole 68, the drying effect of the gas is maintained.
以上の如く本発明の方法及び装置によれば、ウ
エハーとバスケツトの接触部分に洗浄液が残らな
いのでウエハーを完全に乾燥させることができ、
従つてウエハーのその後の処理を良好に行うこと
ができ、素子の特性及び信頼性の向上、ならびに
製作の歩留りの向上を実現可能である。
As described above, according to the method and apparatus of the present invention, since no cleaning liquid remains in the contact area between the wafer and the basket, the wafer can be completely dried.
Therefore, the subsequent processing of the wafer can be performed satisfactorily, and it is possible to improve the characteristics and reliability of the device and to improve the manufacturing yield.
また、本発明の乾燥装置のうち乾燥炉内にガス
吹出し管を設けた第１の装置（第１図から第５
図）の場合は、バスケツト入出時のガス供給管の
接続及び切離し作業が不要であり、またガスを常
時吹き出させておいてバスケツト収容直後からガ
スを吹きつけることができるので、乾燥工程を能
率良く行うことができる利点がある。 Further, among the drying apparatuses of the present invention, the first apparatus (see FIGS. 1 to 5
In the case of (Fig.), there is no need to connect and disconnect the gas supply pipe when entering and exiting the basket, and the gas can be constantly blown out and the gas can be blown immediately after the basket is placed in the basket, making the drying process more efficient. There are advantages to being able to do so.
一方、バスケツト自体にガス吹出し口を設けた
第２装置（第６図）の場合は、乾燥炉にガス吹出
し管を設ける必要がないので、装置が簡単である
という利点がある。 On the other hand, in the case of the second device (FIG. 6) in which the basket itself is provided with a gas outlet, there is no need to provide a gas outlet pipe in the drying oven, so there is an advantage that the device is simple.
第１図から第５図は本発明によるウエハーの乾
燥装置の第１実施例及びこれを用いたウエハーの
乾燥方法を示す図であり、第１図はウエハー乾燥
中の乾燥装置の一部破断斜視図、第２図はバスケ
ツトの斜視図、第３図はガス吹出し部材の斜視
図、第４図はバスケツトをガス吹出し部材上にセ
ツトした状態の斜視図、第５図はウエハー乾燥中
の状態を示す第４図のＡ−Ａ矢視断面図である。
第６図は本発明によるウエハーの乾燥装置の第２
実施例の要部を示す斜視図である。
１……ウエハー、２……乾燥炉、３……バスケ
ツト、３１，３２，３３……棧、４……ガス吹出
し部材、４１，４２，４３……ガス吹出し管、４
６……ガス吹出し口、４７，４８，４９……ガス
供給口、５……ガス供給管、６……バスケツト、
６１……パイプ部分、６３，６４，６５……棧、
６６……ガス吹出し口、６７……ガス供給口、６
８……水抜き穴。
1 to 5 are diagrams showing a first embodiment of a wafer drying apparatus according to the present invention and a wafer drying method using the same, and FIG. 1 is a partially broken perspective view of the drying apparatus during wafer drying. Figure 2 is a perspective view of the basket, Figure 3 is a perspective view of the gas blowing member, Figure 4 is a perspective view of the basket set on the gas blowing member, and Figure 5 shows the state during wafer drying. 5 is a sectional view taken along the line A-A in FIG. 4. FIG.
FIG. 6 shows a second wafer drying apparatus according to the present invention.
FIG. 2 is a perspective view showing the main parts of the embodiment. DESCRIPTION OF SYMBOLS 1...Wafer, 2...Drying oven, 3...Basket, 31, 32, 33...Ran, 4...Gas blowing member, 41, 42, 43...Gas blowing pipe, 4
6... Gas outlet, 47, 48, 49... Gas supply port, 5... Gas supply pipe, 6... Basket,
61...pipe part, 63, 64, 65...棧,
66...Gas outlet, 67...Gas supply port, 6
8... Drain hole.
Claims (1)
トに入れて液体洗浄後、バスケツトごと乾燥炉に
入れて熱乾燥させるウエハーの乾燥方法におい
て、該乾燥炉内で、前記ウエハーと前記バスケツ
トの接触部分に近接した位置にガスの吹出し口を
設け、該ガス吹出し口より吹き出したガスが該接
触部分に局部的に集中するようにガスを吹きつけ
ながら乾燥を行うことを特徴とするウエハーの乾
燥方法。 ２ ウエハーをバスケツトに入れて液体洗浄後、
バスケツトごと熱乾燥炉に入れて乾燥するように
したウエハーの乾燥装置において、前記バスケツ
トを乾燥炉内で支持する支持枠の一部が前記ガス
吹き出し管として構成され、該ガス吹き出し管
は、前記ウエハーとバスケツトの接触部分に近接
する位置にガス吹出し口を有すると共に、前記ガ
ス吹出し管にガス供給源を接続したことを特徴と
するウエハーの乾燥装置。 ３ ウエハーをバスケツトに入れて液体洗浄後、
バスケツトごと乾燥炉に入れて熱乾燥するように
したウエハーの乾燥装置において、前記バスケツ
トの少なくともウエハーを支承する部分がパイプ
で形成され、該パイプ部分は前記ウエハーとの接
触部分にガス吹出し口が形成されていると共に、
ガス供給源に着脱自在に接続可能であることを特
徴とするウエハーの乾燥装置。 ４ 特許請求の範囲第３項記載のウエハーの乾燥
装置において、前記バスケツトのパイプ部分に水
抜き穴を形成したことを特徴とするウエハーの乾
燥装置。[Scope of Claims] 1. A wafer drying method in which a wafer for manufacturing an element such as a semiconductor is placed in a basket, washed with liquid, and then placed in a drying oven for heat drying. A wafer characterized in that a gas outlet is provided in a position close to a contact area of a basket, and drying is performed while blowing gas so that the gas blown out from the gas outlet is locally concentrated on the contact area. drying method. 2 After putting the wafer in the basket and cleaning it with liquid,
In a wafer drying apparatus in which the basket is placed in a thermal drying oven for drying, a part of the support frame that supports the basket in the drying oven is configured as the gas blowing tube, and the gas blowing tube 1. A wafer drying apparatus, comprising: a gas outlet located close to a contact portion between a wafer and a basket; and a gas supply source connected to the gas outlet pipe. 3 After putting the wafer in the basket and cleaning it with liquid,
In a wafer drying apparatus in which a basket is placed in a drying oven for thermal drying, at least a portion of the basket that supports the wafer is formed of a pipe, and a gas outlet is formed in the pipe portion at a portion in contact with the wafer. Along with being
A wafer drying device characterized by being detachably connectable to a gas supply source. 4. The wafer drying apparatus according to claim 3, wherein a drain hole is formed in the pipe portion of the basket.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP10947584A JPS60254620A (en) | 1984-05-31 | 1984-05-31 | Drying method and apparatus of wafer |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP10947584A JPS60254620A (en) | 1984-05-31 | 1984-05-31 | Drying method and apparatus of wafer |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS60254620A JPS60254620A (en) | 1985-12-16 |
| JPH0216006B2 true JPH0216006B2 (en) | 1990-04-13 |
Family
ID=14511175
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP10947584A Granted JPS60254620A (en) | 1984-05-31 | 1984-05-31 | Drying method and apparatus of wafer |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS60254620A (en) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0695512B2 (en) * | 1986-09-10 | 1994-11-24 | 株式会社芝浦製作所 | Hot air generator |
| JP2528111Y2 (en) * | 1991-12-04 | 1997-03-05 | 大日本スクリーン製造株式会社 | Wafer holding holder |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5756930A (en) * | 1980-09-22 | 1982-04-05 | Mitsubishi Electric Corp | Wafer washing and drying device |
-
1984
- 1984-05-31 JP JP10947584A patent/JPS60254620A/en active Granted
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5756930A (en) * | 1980-09-22 | 1982-04-05 | Mitsubishi Electric Corp | Wafer washing and drying device |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS60254620A (en) | 1985-12-16 |
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