JPH02159373A - 多棒式マグネットロンスパッタリング装置 - Google Patents
多棒式マグネットロンスパッタリング装置Info
- Publication number
- JPH02159373A JPH02159373A JP30114788A JP30114788A JPH02159373A JP H02159373 A JPH02159373 A JP H02159373A JP 30114788 A JP30114788 A JP 30114788A JP 30114788 A JP30114788 A JP 30114788A JP H02159373 A JPH02159373 A JP H02159373A
- Authority
- JP
- Japan
- Prior art keywords
- target
- plate
- cathode
- round rods
- rod
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000001755 magnetron sputter deposition Methods 0.000 title claims description 7
- 238000004544 sputter deposition Methods 0.000 claims abstract description 9
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims abstract description 7
- 229910052802 copper Inorganic materials 0.000 claims abstract description 7
- 239000010949 copper Substances 0.000 claims abstract description 7
- 238000001816 cooling Methods 0.000 claims abstract description 6
- 230000005684 electric field Effects 0.000 claims abstract description 5
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 claims description 9
- 229910052786 argon Inorganic materials 0.000 claims description 6
- 239000002184 metal Substances 0.000 claims description 5
- 229910052751 metal Inorganic materials 0.000 claims description 5
- 230000000694 effects Effects 0.000 claims description 4
- 239000007789 gas Substances 0.000 claims description 3
- 239000000853 adhesive Substances 0.000 claims description 2
- 230000001070 adhesive effect Effects 0.000 claims description 2
- 150000001768 cations Chemical class 0.000 claims description 2
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 claims description 2
- 239000000758 substrate Substances 0.000 claims description 2
- 239000013077 target material Substances 0.000 abstract description 4
- 230000002093 peripheral effect Effects 0.000 abstract description 2
- 239000000463 material Substances 0.000 description 12
- 239000000696 magnetic material Substances 0.000 description 9
- 238000010586 diagram Methods 0.000 description 5
- 238000000034 method Methods 0.000 description 5
- 238000012856 packing Methods 0.000 description 5
- 238000004519 manufacturing process Methods 0.000 description 4
- 229910001220 stainless steel Inorganic materials 0.000 description 4
- 239000010935 stainless steel Substances 0.000 description 4
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 3
- -1 argon ion Chemical class 0.000 description 3
- 239000011521 glass Substances 0.000 description 3
- 150000002500 ions Chemical class 0.000 description 3
- 239000007769 metal material Substances 0.000 description 3
- 229910000831 Steel Inorganic materials 0.000 description 2
- 239000003292 glue Substances 0.000 description 2
- 239000012212 insulator Substances 0.000 description 2
- 239000010959 steel Substances 0.000 description 2
- 235000012976 tarts Nutrition 0.000 description 2
- 238000012360 testing method Methods 0.000 description 2
- 244000005687 Poranopsis paniculata Species 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 102000006463 Talin Human genes 0.000 description 1
- 108010083809 Talin Proteins 0.000 description 1
- 230000002159 abnormal effect Effects 0.000 description 1
- 230000001154 acute effect Effects 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 238000005553 drilling Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000005350 fused silica glass Substances 0.000 description 1
- 238000001459 lithography Methods 0.000 description 1
- 230000007774 longterm Effects 0.000 description 1
- 239000002923 metal particle Substances 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 239000003208 petroleum Substances 0.000 description 1
- 125000003367 polycyclic group Chemical group 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
- QYSXJUFSXHHAJI-YRZJJWOYSA-N vitamin D3 Chemical compound C1(/[C@@H]2CC[C@@H]([C@]2(CCC1)C)[C@H](C)CCCC(C)C)=C\C=C1\C[C@@H](O)CCC1=C QYSXJUFSXHHAJI-YRZJJWOYSA-N 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Landscapes
- Physical Vapour Deposition (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP30114788A JPH02159373A (ja) | 1988-11-30 | 1988-11-30 | 多棒式マグネットロンスパッタリング装置 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP30114788A JPH02159373A (ja) | 1988-11-30 | 1988-11-30 | 多棒式マグネットロンスパッタリング装置 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH02159373A true JPH02159373A (ja) | 1990-06-19 |
| JPH0341547B2 JPH0341547B2 (OSRAM) | 1991-06-24 |
Family
ID=17893351
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP30114788A Granted JPH02159373A (ja) | 1988-11-30 | 1988-11-30 | 多棒式マグネットロンスパッタリング装置 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH02159373A (OSRAM) |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS61206672U (OSRAM) * | 1985-06-12 | 1986-12-27 |
-
1988
- 1988-11-30 JP JP30114788A patent/JPH02159373A/ja active Granted
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS61206672U (OSRAM) * | 1985-06-12 | 1986-12-27 |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0341547B2 (OSRAM) | 1991-06-24 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US4370217A (en) | Target assembly comprising, for use in a magnetron-type sputtering device, a magnetic target plate and permanent magnet pieces | |
| US3956093A (en) | Planar magnetron sputtering method and apparatus | |
| US4169031A (en) | Magnetron sputter cathode assembly | |
| US4385979A (en) | Target assemblies of special materials for use in sputter coating apparatus | |
| US4179351A (en) | Cylindrical magnetron sputtering source | |
| JPS61190070A (ja) | スパツタ装置 | |
| US4673482A (en) | Sputtering apparatus | |
| JPH05209266A (ja) | 分布磁界を有するマグネトロン・スパッタ・ガン・ターゲット・アセンブリ | |
| JP4526582B2 (ja) | スパッタリング装置およびスパッタリング方法 | |
| JPS6039159A (ja) | 陰極スパツタリング装置のためのマグネトロン陰極 | |
| CN110791742A (zh) | 一种磁控溅射阴极的磁源结构及其调节磁场的方法 | |
| JPS6139522A (ja) | 平坦なタ−ゲツト及び凹状のタ−ゲツトを有するマグネトロンスパツタリング装置 | |
| US20140042023A1 (en) | Magnetron design for extended target life in radio frequency (rf) plasmas | |
| CN204676145U (zh) | 一种磁控溅射靶屏蔽装置 | |
| JPH02159373A (ja) | 多棒式マグネットロンスパッタリング装置 | |
| CN211112196U (zh) | 一种磁控溅射阴极的磁源结构 | |
| US4879017A (en) | Multi-rod type magnetron sputtering apparatus | |
| CN104968829B (zh) | 溅射设备 | |
| JPH0525625A (ja) | マグネトロンスパツタカソード | |
| US20220406582A1 (en) | Multifocal magnetron design for physical vapor deposition processing on a single cathode | |
| CN107151784B (zh) | 一种阴极磁控溅射靶装置 | |
| JPS5562164A (en) | Sputtering unit | |
| JP4614936B2 (ja) | 複合型スパッタ装置及び複合型スパッタ方法 | |
| CN111996504A (zh) | 铁磁性靶材磁控溅射装置 | |
| JPS6367328B2 (OSRAM) |