JPH02155270A - Image sensor - Google Patents
Image sensorInfo
- Publication number
- JPH02155270A JPH02155270A JP63308840A JP30884088A JPH02155270A JP H02155270 A JPH02155270 A JP H02155270A JP 63308840 A JP63308840 A JP 63308840A JP 30884088 A JP30884088 A JP 30884088A JP H02155270 A JPH02155270 A JP H02155270A
- Authority
- JP
- Japan
- Prior art keywords
- electric
- image sensor
- layer
- group
- metal electrode
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 229910052751 metal Inorganic materials 0.000 claims abstract description 20
- 239000002184 metal Substances 0.000 claims abstract description 20
- 239000003795 chemical substances by application Substances 0.000 claims abstract description 19
- 150000001875 compounds Chemical class 0.000 claims abstract description 17
- 229920000548 poly(silane) polymer Polymers 0.000 claims abstract description 9
- 125000000217 alkyl group Chemical group 0.000 claims description 6
- 125000003118 aryl group Chemical group 0.000 claims description 5
- 125000003545 alkoxy group Chemical group 0.000 claims description 3
- 239000000126 substance Substances 0.000 claims description 3
- 125000000547 substituted alkyl group Chemical group 0.000 claims description 3
- 125000003107 substituted aryl group Chemical group 0.000 claims description 3
- 239000000178 monomer Substances 0.000 claims 1
- 239000000049 pigment Substances 0.000 abstract description 32
- 238000000034 method Methods 0.000 abstract description 8
- 229920005989 resin Polymers 0.000 abstract description 6
- 239000011347 resin Substances 0.000 abstract description 6
- 229910052782 aluminium Inorganic materials 0.000 abstract description 5
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 abstract description 5
- 230000003287 optical effect Effects 0.000 abstract description 5
- 238000004544 sputter deposition Methods 0.000 abstract description 5
- 239000000758 substrate Substances 0.000 abstract description 5
- 125000000664 diazo group Chemical group [N-]=[N+]=[*] 0.000 abstract description 3
- 239000011521 glass Substances 0.000 abstract description 3
- 229920002037 poly(vinyl butyral) polymer Polymers 0.000 abstract description 3
- 239000004020 conductor Substances 0.000 abstract 3
- UHOVQNZJYSORNB-UHFFFAOYSA-N Benzene Chemical compound C1=CC=CC=C1 UHOVQNZJYSORNB-UHFFFAOYSA-N 0.000 abstract 1
- 238000001704 evaporation Methods 0.000 abstract 1
- 239000007788 liquid Substances 0.000 abstract 1
- 230000005693 optoelectronics Effects 0.000 abstract 1
- 239000002904 solvent Substances 0.000 abstract 1
- 239000010410 layer Substances 0.000 description 27
- -1 heterocyclic diamine Chemical class 0.000 description 22
- YXFVVABEGXRONW-UHFFFAOYSA-N Toluene Chemical compound CC1=CC=CC=C1 YXFVVABEGXRONW-UHFFFAOYSA-N 0.000 description 9
- 239000000975 dye Substances 0.000 description 9
- AZQWKYJCGOJGHM-UHFFFAOYSA-N 1,4-benzoquinone Chemical compound O=C1C=CC(=O)C=C1 AZQWKYJCGOJGHM-UHFFFAOYSA-N 0.000 description 6
- 239000010408 film Substances 0.000 description 6
- ANRHNWWPFJCPAZ-UHFFFAOYSA-M thionine Chemical compound [Cl-].C1=CC(N)=CC2=[S+]C3=CC(N)=CC=C3N=C21 ANRHNWWPFJCPAZ-UHFFFAOYSA-M 0.000 description 6
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 4
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 4
- SMWDFEZZVXVKRB-UHFFFAOYSA-N Quinoline Chemical compound N1=CC=CC2=CC=CC=C21 SMWDFEZZVXVKRB-UHFFFAOYSA-N 0.000 description 4
- 229910052794 bromium Inorganic materials 0.000 description 4
- 238000006243 chemical reaction Methods 0.000 description 4
- WFDIJRYMOXRFFG-UHFFFAOYSA-N Acetic anhydride Chemical compound CC(=O)OC(C)=O WFDIJRYMOXRFFG-UHFFFAOYSA-N 0.000 description 3
- 125000003277 amino group Chemical group 0.000 description 3
- 125000005843 halogen group Chemical group 0.000 description 3
- 229910052739 hydrogen Inorganic materials 0.000 description 3
- 125000004435 hydrogen atom Chemical group [H]* 0.000 description 3
- 125000000956 methoxy group Chemical group [H]C([H])([H])O* 0.000 description 3
- 125000002496 methyl group Chemical group [H]C([H])([H])* 0.000 description 3
- 125000000449 nitro group Chemical group [O-][N+](*)=O 0.000 description 3
- 229910052760 oxygen Inorganic materials 0.000 description 3
- WVIICGIFSIBFOG-UHFFFAOYSA-N pyrylium Chemical compound C1=CC=[O+]C=C1 WVIICGIFSIBFOG-UHFFFAOYSA-N 0.000 description 3
- 229910052717 sulfur Inorganic materials 0.000 description 3
- 239000010409 thin film Substances 0.000 description 3
- 238000007740 vapor deposition Methods 0.000 description 3
- TXUICONDJPYNPY-UHFFFAOYSA-N (1,10,13-trimethyl-3-oxo-4,5,6,7,8,9,11,12,14,15,16,17-dodecahydrocyclopenta[a]phenanthren-17-yl) heptanoate Chemical compound C1CC2CC(=O)C=C(C)C2(C)C2C1C1CCC(OC(=O)CCCCCC)C1(C)CC2 TXUICONDJPYNPY-UHFFFAOYSA-N 0.000 description 2
- NJWGQARXZDRHCD-UHFFFAOYSA-N 2-methylanthraquinone Chemical compound C1=CC=C2C(=O)C3=CC(C)=CC=C3C(=O)C2=C1 NJWGQARXZDRHCD-UHFFFAOYSA-N 0.000 description 2
- 125000003903 2-propenyl group Chemical group [H]C([*])([H])C([H])=C([H])[H] 0.000 description 2
- XBWFYFHSIFEXMY-UHFFFAOYSA-N 9,10-dioxoanthracene-2-carbaldehyde Chemical compound C1=CC=C2C(=O)C3=CC(C=O)=CC=C3C(=O)C2=C1 XBWFYFHSIFEXMY-UHFFFAOYSA-N 0.000 description 2
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 description 2
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 2
- RTZKZFJDLAIYFH-UHFFFAOYSA-N Diethyl ether Chemical compound CCOCC RTZKZFJDLAIYFH-UHFFFAOYSA-N 0.000 description 2
- DGAQECJNVWCQMB-PUAWFVPOSA-M Ilexoside XXIX Chemical compound C[C@@H]1CC[C@@]2(CC[C@@]3(C(=CC[C@H]4[C@]3(CC[C@@H]5[C@@]4(CC[C@@H](C5(C)C)OS(=O)(=O)[O-])C)C)[C@@H]2[C@]1(C)O)C)C(=O)O[C@H]6[C@@H]([C@H]([C@@H]([C@H](O6)CO)O)O)O.[Na+] DGAQECJNVWCQMB-PUAWFVPOSA-M 0.000 description 2
- 235000000177 Indigofera tinctoria Nutrition 0.000 description 2
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 description 2
- TWRXJAOTZQYOKJ-UHFFFAOYSA-L Magnesium chloride Chemical compound [Mg+2].[Cl-].[Cl-] TWRXJAOTZQYOKJ-UHFFFAOYSA-L 0.000 description 2
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 description 2
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 description 2
- BUGBHKTXTAQXES-UHFFFAOYSA-N Selenium Chemical compound [Se] BUGBHKTXTAQXES-UHFFFAOYSA-N 0.000 description 2
- NINIDFKCEFEMDL-UHFFFAOYSA-N Sulfur Chemical group [S] NINIDFKCEFEMDL-UHFFFAOYSA-N 0.000 description 2
- WYURNTSHIVDZCO-UHFFFAOYSA-N Tetrahydrofuran Chemical compound C1CCOC1 WYURNTSHIVDZCO-UHFFFAOYSA-N 0.000 description 2
- 229910021626 Tin(II) chloride Inorganic materials 0.000 description 2
- 229910021627 Tin(IV) chloride Inorganic materials 0.000 description 2
- ZTWQZJLUUZHJGS-UHFFFAOYSA-N Vat Yellow 4 Chemical compound C12=CC=CC=C2C(=O)C2=CC=C3C4=CC=CC=C4C(=O)C4=C3C2=C1C=C4 ZTWQZJLUUZHJGS-UHFFFAOYSA-N 0.000 description 2
- 238000009825 accumulation Methods 0.000 description 2
- 239000002253 acid Substances 0.000 description 2
- VSCWAEJMTAWNJL-UHFFFAOYSA-K aluminium trichloride Chemical compound Cl[Al](Cl)Cl VSCWAEJMTAWNJL-UHFFFAOYSA-K 0.000 description 2
- 125000004429 atom Chemical group 0.000 description 2
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 2
- HFACYLZERDEVSX-UHFFFAOYSA-N benzidine Chemical compound C1=CC(N)=CC=C1C1=CC=C(N)C=C1 HFACYLZERDEVSX-UHFFFAOYSA-N 0.000 description 2
- 239000011230 binding agent Substances 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- WTEOIRVLGSZEPR-UHFFFAOYSA-N boron trifluoride Chemical compound FB(F)F WTEOIRVLGSZEPR-UHFFFAOYSA-N 0.000 description 2
- 229910052793 cadmium Inorganic materials 0.000 description 2
- BDOSMKKIYDKNTQ-UHFFFAOYSA-N cadmium atom Chemical compound [Cd] BDOSMKKIYDKNTQ-UHFFFAOYSA-N 0.000 description 2
- 229910052804 chromium Inorganic materials 0.000 description 2
- 239000011651 chromium Substances 0.000 description 2
- 239000011248 coating agent Substances 0.000 description 2
- 238000000576 coating method Methods 0.000 description 2
- QTMDXZNDVAMKGV-UHFFFAOYSA-L copper(ii) bromide Chemical compound [Cu+2].[Br-].[Br-] QTMDXZNDVAMKGV-UHFFFAOYSA-L 0.000 description 2
- 239000006185 dispersion Substances 0.000 description 2
- 125000001495 ethyl group Chemical group [H]C([H])([H])C([H])([H])* 0.000 description 2
- 239000004744 fabric Substances 0.000 description 2
- 125000000623 heterocyclic group Chemical group 0.000 description 2
- 229940097275 indigo Drugs 0.000 description 2
- COHYTHOBJLSHDF-UHFFFAOYSA-N indigo powder Natural products N1C2=CC=CC=C2C(=O)C1=C1C(=O)C2=CC=CC=C2N1 COHYTHOBJLSHDF-UHFFFAOYSA-N 0.000 description 2
- 229910052738 indium Inorganic materials 0.000 description 2
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 2
- 229910052740 iodine Inorganic materials 0.000 description 2
- 229910052742 iron Inorganic materials 0.000 description 2
- 229910052749 magnesium Inorganic materials 0.000 description 2
- 239000011777 magnesium Substances 0.000 description 2
- 239000012046 mixed solvent Substances 0.000 description 2
- 229910052759 nickel Inorganic materials 0.000 description 2
- 239000001301 oxygen Substances 0.000 description 2
- 125000002080 perylenyl group Chemical group C1(=CC=C2C=CC=C3C4=CC=CC5=CC=CC(C1=C23)=C45)* 0.000 description 2
- CSHWQDPOILHKBI-UHFFFAOYSA-N peryrene Natural products C1=CC(C2=CC=CC=3C2=C2C=CC=3)=C3C2=CC=CC3=C1 CSHWQDPOILHKBI-UHFFFAOYSA-N 0.000 description 2
- 125000001997 phenyl group Chemical group [H]C1=C([H])C([H])=C(*)C([H])=C1[H] 0.000 description 2
- IEQIEDJGQAUEQZ-UHFFFAOYSA-N phthalocyanine Chemical compound N1C(N=C2C3=CC=CC=C3C(N=C3C4=CC=CC=C4C(=N4)N3)=N2)=C(C=CC=C2)C2=C1N=C1C2=CC=CC=C2C4=N1 IEQIEDJGQAUEQZ-UHFFFAOYSA-N 0.000 description 2
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 2
- 229910052711 selenium Inorganic materials 0.000 description 2
- 239000011669 selenium Substances 0.000 description 2
- 239000002356 single layer Substances 0.000 description 2
- 229910052708 sodium Inorganic materials 0.000 description 2
- 239000011734 sodium Substances 0.000 description 2
- 239000001119 stannous chloride Substances 0.000 description 2
- 235000011150 stannous chloride Nutrition 0.000 description 2
- 239000011593 sulfur Substances 0.000 description 2
- HPGGPRDJHPYFRM-UHFFFAOYSA-J tin(iv) chloride Chemical compound Cl[Sn](Cl)(Cl)Cl HPGGPRDJHPYFRM-UHFFFAOYSA-J 0.000 description 2
- JIAARYAFYJHUJI-UHFFFAOYSA-L zinc dichloride Chemical compound [Cl-].[Cl-].[Zn+2] JIAARYAFYJHUJI-UHFFFAOYSA-L 0.000 description 2
- SOFRRASTMXXBMY-UHFFFAOYSA-N (4-chloro-3-nitrophenyl)phosphonic acid Chemical class OP(O)(=O)C1=CC=C(Cl)C([N+]([O-])=O)=C1 SOFRRASTMXXBMY-UHFFFAOYSA-N 0.000 description 1
- YQRRSORFUCNQAC-UHFFFAOYSA-N 1,2-dihydroacenaphthylen-5-yl(phenyl)methanone Chemical compound C=1C=C(C=23)CCC3=CC=CC=2C=1C(=O)C1=CC=CC=C1 YQRRSORFUCNQAC-UHFFFAOYSA-N 0.000 description 1
- UHKAJLSKXBADFT-UHFFFAOYSA-N 1,3-indandione Chemical compound C1=CC=C2C(=O)CC(=O)C2=C1 UHKAJLSKXBADFT-UHFFFAOYSA-N 0.000 description 1
- QIGBRXMKCJKVMJ-UHFFFAOYSA-N 1,4-Benzenediol Natural products OC1=CC=C(O)C=C1 QIGBRXMKCJKVMJ-UHFFFAOYSA-N 0.000 description 1
- DVFAVJDEPNXAME-UHFFFAOYSA-N 1,4-dimethylanthracene-9,10-dione Chemical compound O=C1C2=CC=CC=C2C(=O)C2=C1C(C)=CC=C2C DVFAVJDEPNXAME-UHFFFAOYSA-N 0.000 description 1
- MQIUMARJCOGCIM-UHFFFAOYSA-N 1,5-dichloroanthracene-9,10-dione Chemical compound O=C1C2=C(Cl)C=CC=C2C(=O)C2=C1C=CC=C2Cl MQIUMARJCOGCIM-UHFFFAOYSA-N 0.000 description 1
- MNGHUZFOUJIGMM-UHFFFAOYSA-N 1-(4-acetylphenyl)-3-[4-(dimethylamino)phenyl]prop-2-en-1-one Chemical compound C1=CC(N(C)C)=CC=C1C=CC(=O)C1=CC=C(C(C)=O)C=C1 MNGHUZFOUJIGMM-UHFFFAOYSA-N 0.000 description 1
- BOCJQSFSGAZAPQ-UHFFFAOYSA-N 1-chloroanthracene-9,10-dione Chemical compound O=C1C2=CC=CC=C2C(=O)C2=C1C=CC=C2Cl BOCJQSFSGAZAPQ-UHFFFAOYSA-N 0.000 description 1
- PCJRPSGTNRQSCZ-UHFFFAOYSA-N 1-hexadecylanthracene Chemical compound C1=CC=C2C=C3C(CCCCCCCCCCCCCCCC)=CC=CC3=CC2=C1 PCJRPSGTNRQSCZ-UHFFFAOYSA-N 0.000 description 1
- JCARTGJGWCGSSU-UHFFFAOYSA-N 2,6-dichlorobenzoquinone Chemical compound ClC1=CC(=O)C=C(Cl)C1=O JCARTGJGWCGSSU-UHFFFAOYSA-N 0.000 description 1
- WOGWYSWDBYCVDY-UHFFFAOYSA-N 2-chlorocyclohexa-2,5-diene-1,4-dione Chemical compound ClC1=CC(=O)C=CC1=O WOGWYSWDBYCVDY-UHFFFAOYSA-N 0.000 description 1
- ZSLUVFAKFWKJRC-IGMARMGPSA-N 232Th Chemical compound [232Th] ZSLUVFAKFWKJRC-IGMARMGPSA-N 0.000 description 1
- XQGDNRFLRLSUFQ-UHFFFAOYSA-N 2H-pyranthren-1-one Chemical class C1=C(C2=C3C4=C56)C=CC3=CC5=C3C=CC=CC3=CC6=CC=C4C=C2C2=C1C(=O)CC=C2 XQGDNRFLRLSUFQ-UHFFFAOYSA-N 0.000 description 1
- RBTBFTRPCNLSDE-UHFFFAOYSA-N 3,7-bis(dimethylamino)phenothiazin-5-ium Chemical compound C1=CC(N(C)C)=CC2=[S+]C3=CC(N(C)C)=CC=C3N=C21 RBTBFTRPCNLSDE-UHFFFAOYSA-N 0.000 description 1
- UITKHKNFVCYWNG-UHFFFAOYSA-N 4-(3,4-dicarboxybenzoyl)phthalic acid Chemical compound C1=C(C(O)=O)C(C(=O)O)=CC=C1C(=O)C1=CC=C(C(O)=O)C(C(O)=O)=C1 UITKHKNFVCYWNG-UHFFFAOYSA-N 0.000 description 1
- AXDJCCTWPBKUKL-UHFFFAOYSA-N 4-[(4-aminophenyl)-(4-imino-3-methylcyclohexa-2,5-dien-1-ylidene)methyl]aniline;hydron;chloride Chemical compound Cl.C1=CC(=N)C(C)=CC1=C(C=1C=CC(N)=CC=1)C1=CC=C(N)C=C1 AXDJCCTWPBKUKL-UHFFFAOYSA-N 0.000 description 1
- BTJIUGUIPKRLHP-UHFFFAOYSA-N 4-nitrophenol Chemical compound OC1=CC=C([N+]([O-])=O)C=C1 BTJIUGUIPKRLHP-UHFFFAOYSA-N 0.000 description 1
- ISDBWOPVZKNQDW-UHFFFAOYSA-N 4-phenylbenzaldehyde Chemical compound C1=CC(C=O)=CC=C1C1=CC=CC=C1 ISDBWOPVZKNQDW-UHFFFAOYSA-N 0.000 description 1
- IJNPIHLZSZCGOC-UHFFFAOYSA-N 9,10-dioxoanthracene-1,8-disulfonic acid Chemical compound O=C1C2=CC=CC(S(O)(=O)=O)=C2C(=O)C2=C1C=CC=C2S(=O)(=O)O IJNPIHLZSZCGOC-UHFFFAOYSA-N 0.000 description 1
- YYVYAPXYZVYDHN-UHFFFAOYSA-N 9,10-phenanthroquinone Chemical compound C1=CC=C2C(=O)C(=O)C3=CC=CC=C3C2=C1 YYVYAPXYZVYDHN-UHFFFAOYSA-N 0.000 description 1
- 229910015900 BF3 Inorganic materials 0.000 description 1
- OYPRJOBELJOOCE-UHFFFAOYSA-N Calcium Chemical compound [Ca] OYPRJOBELJOOCE-UHFFFAOYSA-N 0.000 description 1
- UNMYWSMUMWPJLR-UHFFFAOYSA-L Calcium iodide Chemical compound [Ca+2].[I-].[I-] UNMYWSMUMWPJLR-UHFFFAOYSA-L 0.000 description 1
- 235000006693 Cassia laevigata Nutrition 0.000 description 1
- VEXZGXHMUGYJMC-UHFFFAOYSA-M Chloride anion Chemical compound [Cl-] VEXZGXHMUGYJMC-UHFFFAOYSA-M 0.000 description 1
- 229910021581 Cobalt(III) chloride Inorganic materials 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 229910021590 Copper(II) bromide Inorganic materials 0.000 description 1
- 229910052692 Dysprosium Inorganic materials 0.000 description 1
- 229910052691 Erbium Inorganic materials 0.000 description 1
- 229910052693 Europium Inorganic materials 0.000 description 1
- 229910052689 Holmium Inorganic materials 0.000 description 1
- 229910021578 Iron(III) chloride Inorganic materials 0.000 description 1
- WHXSMMKQMYFTQS-UHFFFAOYSA-N Lithium Chemical compound [Li] WHXSMMKQMYFTQS-UHFFFAOYSA-N 0.000 description 1
- 229910021380 Manganese Chloride Inorganic materials 0.000 description 1
- GLFNIEUTAYBVOC-UHFFFAOYSA-L Manganese chloride Chemical compound Cl[Mn]Cl GLFNIEUTAYBVOC-UHFFFAOYSA-L 0.000 description 1
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 1
- 229910052779 Neodymium Inorganic materials 0.000 description 1
- 239000004698 Polyethylene Substances 0.000 description 1
- ZLMJMSJWJFRBEC-UHFFFAOYSA-N Potassium Chemical compound [K] ZLMJMSJWJFRBEC-UHFFFAOYSA-N 0.000 description 1
- YFPSDOXLHBDCOR-UHFFFAOYSA-N Pyrene-1,6-dione Chemical compound C1=CC(C(=O)C=C2)=C3C2=CC=C2C(=O)C=CC1=C32 YFPSDOXLHBDCOR-UHFFFAOYSA-N 0.000 description 1
- NRCMAYZCPIVABH-UHFFFAOYSA-N Quinacridone Chemical compound N1C2=CC=CC=C2C(=O)C2=C1C=C1C(=O)C3=CC=CC=C3NC1=C2 NRCMAYZCPIVABH-UHFFFAOYSA-N 0.000 description 1
- KJTLSVCANCCWHF-UHFFFAOYSA-N Ruthenium Chemical compound [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 description 1
- 229910052772 Samarium Inorganic materials 0.000 description 1
- 241000735631 Senna pendula Species 0.000 description 1
- PJANXHGTPQOBST-VAWYXSNFSA-N Stilbene Natural products C=1C=CC=CC=1/C=C/C1=CC=CC=C1 PJANXHGTPQOBST-VAWYXSNFSA-N 0.000 description 1
- 229910052776 Thorium Inorganic materials 0.000 description 1
- 229910052775 Thulium Inorganic materials 0.000 description 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- 229910052770 Uranium Inorganic materials 0.000 description 1
- 229910052769 Ytterbium Inorganic materials 0.000 description 1
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 description 1
- DOLKKDJAWDNAMU-UHFFFAOYSA-N [4-[bis[4-(diethylamino)phenyl]methylidene]naphthalen-1-ylidene]-(4-methylphenyl)azanium;chloride Chemical compound [Cl-].C1=CC(N(CC)CC)=CC=C1C(C=1C=CC(=CC=1)N(CC)CC)=C(C=C1)C2=CC=CC=C2C1=[NH+]C1=CC=C(C)C=C1 DOLKKDJAWDNAMU-UHFFFAOYSA-N 0.000 description 1
- GTDPSWPPOUPBNX-UHFFFAOYSA-N ac1mqpva Chemical compound CC12C(=O)OC(=O)C1(C)C1(C)C2(C)C(=O)OC1=O GTDPSWPPOUPBNX-UHFFFAOYSA-N 0.000 description 1
- AFPRJLBZLPBTPZ-UHFFFAOYSA-N acenaphthoquinone Chemical compound C1=CC(C(C2=O)=O)=C3C2=CC=CC3=C1 AFPRJLBZLPBTPZ-UHFFFAOYSA-N 0.000 description 1
- YPZUJBCHDOYGSH-UHFFFAOYSA-N acenaphthylene-1,2-dione dihydrochloride Chemical compound Cl.Cl.C1=CC(C(C2=O)=O)=C3C2=CC=CC3=C1 YPZUJBCHDOYGSH-UHFFFAOYSA-N 0.000 description 1
- DYRDKSSFIWVSNM-UHFFFAOYSA-N acetoacetanilide Chemical compound CC(=O)CC(=O)NC1=CC=CC=C1 DYRDKSSFIWVSNM-UHFFFAOYSA-N 0.000 description 1
- 150000007513 acids Chemical class 0.000 description 1
- 125000001931 aliphatic group Chemical group 0.000 description 1
- 125000002877 alkyl aryl group Chemical group 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 229910000147 aluminium phosphate Inorganic materials 0.000 description 1
- 150000008064 anhydrides Chemical class 0.000 description 1
- 125000000129 anionic group Chemical group 0.000 description 1
- YBIBFEHHOULQKH-UHFFFAOYSA-N anthracen-9-yl(phenyl)methanone Chemical compound C=12C=CC=CC2=CC2=CC=CC=C2C=1C(=O)C1=CC=CC=C1 YBIBFEHHOULQKH-UHFFFAOYSA-N 0.000 description 1
- BEQBQOAWTXSRIB-UHFFFAOYSA-N anthracene-9,10-dione;1,3-thiazole Chemical compound C1=CSC=N1.C1=CC=C2C(=O)C3=CC=CC=C3C(=O)C2=C1 BEQBQOAWTXSRIB-UHFFFAOYSA-N 0.000 description 1
- PYKYMHQGRFAEBM-UHFFFAOYSA-N anthraquinone Natural products CCC(=O)c1c(O)c2C(=O)C3C(C=CC=C3O)C(=O)c2cc1CC(=O)OC PYKYMHQGRFAEBM-UHFFFAOYSA-N 0.000 description 1
- 150000004056 anthraquinones Chemical class 0.000 description 1
- 229910052787 antimony Inorganic materials 0.000 description 1
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 description 1
- VMPVEPPRYRXYNP-UHFFFAOYSA-I antimony(5+);pentachloride Chemical compound Cl[Sb](Cl)(Cl)(Cl)Cl VMPVEPPRYRXYNP-UHFFFAOYSA-I 0.000 description 1
- 229910052785 arsenic Inorganic materials 0.000 description 1
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 1
- OEYOHULQRFXULB-UHFFFAOYSA-N arsenic trichloride Chemical compound Cl[As](Cl)Cl OEYOHULQRFXULB-UHFFFAOYSA-N 0.000 description 1
- 239000012298 atmosphere Substances 0.000 description 1
- 229910052788 barium Inorganic materials 0.000 description 1
- DSAJWYNOEDNPEQ-UHFFFAOYSA-N barium atom Chemical compound [Ba] DSAJWYNOEDNPEQ-UHFFFAOYSA-N 0.000 description 1
- RWCCWEUUXYIKHB-UHFFFAOYSA-N benzophenone Chemical compound C=1C=CC=CC=1C(=O)C1=CC=CC=C1 RWCCWEUUXYIKHB-UHFFFAOYSA-N 0.000 description 1
- 239000012965 benzophenone Substances 0.000 description 1
- 125000001797 benzyl group Chemical group [H]C1=C([H])C([H])=C(C([H])=C1[H])C([H])([H])* 0.000 description 1
- 229910052790 beryllium Inorganic materials 0.000 description 1
- ATBAMAFKBVZNFJ-UHFFFAOYSA-N beryllium atom Chemical compound [Be] ATBAMAFKBVZNFJ-UHFFFAOYSA-N 0.000 description 1
- 230000000903 blocking effect Effects 0.000 description 1
- 150000001639 boron compounds Chemical class 0.000 description 1
- 229910052791 calcium Inorganic materials 0.000 description 1
- 239000011575 calcium Substances 0.000 description 1
- 229910001622 calcium bromide Inorganic materials 0.000 description 1
- 229940059251 calcium bromide Drugs 0.000 description 1
- WGEFECGEFUFIQW-UHFFFAOYSA-L calcium dibromide Chemical compound [Ca+2].[Br-].[Br-] WGEFECGEFUFIQW-UHFFFAOYSA-L 0.000 description 1
- 229910001640 calcium iodide Inorganic materials 0.000 description 1
- 229940046413 calcium iodide Drugs 0.000 description 1
- 125000004432 carbon atom Chemical group C* 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- VYLVYHXQOHJDJL-UHFFFAOYSA-K cerium trichloride Chemical compound Cl[Ce](Cl)Cl VYLVYHXQOHJDJL-UHFFFAOYSA-K 0.000 description 1
- 239000002800 charge carrier Substances 0.000 description 1
- 229910052801 chlorine Inorganic materials 0.000 description 1
- 125000001309 chloro group Chemical group Cl* 0.000 description 1
- XZQOHYZUWTWZBL-UHFFFAOYSA-L chromium(ii) bromide Chemical compound [Cr+2].[Br-].[Br-] XZQOHYZUWTWZBL-UHFFFAOYSA-L 0.000 description 1
- HZGMNNQOPOLCIG-UHFFFAOYSA-N chrysene-5,6-dione Chemical compound C12=CC=CC=C2C(=O)C(=O)C2=C1C=CC1=CC=CC=C21 HZGMNNQOPOLCIG-UHFFFAOYSA-N 0.000 description 1
- 229910017052 cobalt Inorganic materials 0.000 description 1
- 239000010941 cobalt Substances 0.000 description 1
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 239000012792 core layer Substances 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- ZXJXZNDDNMQXFV-UHFFFAOYSA-M crystal violet Chemical compound [Cl-].C1=CC(N(C)C)=CC=C1[C+](C=1C=CC(=CC=1)N(C)C)C1=CC=C(N(C)C)C=C1 ZXJXZNDDNMQXFV-UHFFFAOYSA-M 0.000 description 1
- TZKUEMHGRFBQIX-UHFFFAOYSA-N cyclohexylmethylsilane Chemical compound [SiH3]CC1CCCCC1 TZKUEMHGRFBQIX-UHFFFAOYSA-N 0.000 description 1
- 238000005695 dehalogenation reaction Methods 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- KBQHZAAAGSGFKK-UHFFFAOYSA-N dysprosium atom Chemical compound [Dy] KBQHZAAAGSGFKK-UHFFFAOYSA-N 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000003822 epoxy resin Substances 0.000 description 1
- UYAHIZSMUZPPFV-UHFFFAOYSA-N erbium Chemical compound [Er] UYAHIZSMUZPPFV-UHFFFAOYSA-N 0.000 description 1
- OGPBJKLSAFTDLK-UHFFFAOYSA-N europium atom Chemical compound [Eu] OGPBJKLSAFTDLK-UHFFFAOYSA-N 0.000 description 1
- 125000000524 functional group Chemical group 0.000 description 1
- 125000002541 furyl group Chemical group 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 229910052735 hafnium Inorganic materials 0.000 description 1
- VBJZVLUMGGDVMO-UHFFFAOYSA-N hafnium atom Chemical compound [Hf] VBJZVLUMGGDVMO-UHFFFAOYSA-N 0.000 description 1
- KJZYNXUDTRRSPN-UHFFFAOYSA-N holmium atom Chemical compound [Ho] KJZYNXUDTRRSPN-UHFFFAOYSA-N 0.000 description 1
- RBTARNINKXHZNM-UHFFFAOYSA-K iron trichloride Chemical compound Cl[Fe](Cl)Cl RBTARNINKXHZNM-UHFFFAOYSA-K 0.000 description 1
- 229910052746 lanthanum Inorganic materials 0.000 description 1
- FZLIPJUXYLNCLC-UHFFFAOYSA-N lanthanum atom Chemical compound [La] FZLIPJUXYLNCLC-UHFFFAOYSA-N 0.000 description 1
- 229910052744 lithium Inorganic materials 0.000 description 1
- OTCKOJUMXQWKQG-UHFFFAOYSA-L magnesium bromide Chemical compound [Mg+2].[Br-].[Br-] OTCKOJUMXQWKQG-UHFFFAOYSA-L 0.000 description 1
- 229910001623 magnesium bromide Inorganic materials 0.000 description 1
- 229910001629 magnesium chloride Inorganic materials 0.000 description 1
- 229940107698 malachite green Drugs 0.000 description 1
- FDZZZRQASAIRJF-UHFFFAOYSA-M malachite green Chemical compound [Cl-].C1=CC(N(C)C)=CC=C1C(C=1C=CC=CC=1)=C1C=CC(=[N+](C)C)C=C1 FDZZZRQASAIRJF-UHFFFAOYSA-M 0.000 description 1
- FPYJFEHAWHCUMM-UHFFFAOYSA-N maleic anhydride Chemical compound O=C1OC(=O)C=C1 FPYJFEHAWHCUMM-UHFFFAOYSA-N 0.000 description 1
- 239000011565 manganese chloride Substances 0.000 description 1
- 235000002867 manganese chloride Nutrition 0.000 description 1
- WPBNNNQJVZRUHP-UHFFFAOYSA-L manganese(2+);methyl n-[[2-(methoxycarbonylcarbamothioylamino)phenyl]carbamothioyl]carbamate;n-[2-(sulfidocarbothioylamino)ethyl]carbamodithioate Chemical compound [Mn+2].[S-]C(=S)NCCNC([S-])=S.COC(=O)NC(=S)NC1=CC=CC=C1NC(=S)NC(=O)OC WPBNNNQJVZRUHP-UHFFFAOYSA-L 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- QSHDDOUJBYECFT-UHFFFAOYSA-N mercury Chemical compound [Hg] QSHDDOUJBYECFT-UHFFFAOYSA-N 0.000 description 1
- 229910052753 mercury Inorganic materials 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 229910052752 metalloid Inorganic materials 0.000 description 1
- 150000002738 metalloids Chemical class 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 229960000907 methylthioninium chloride Drugs 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 239000011733 molybdenum Substances 0.000 description 1
- QEFYFXOXNSNQGX-UHFFFAOYSA-N neodymium atom Chemical compound [Nd] QEFYFXOXNSNQGX-UHFFFAOYSA-N 0.000 description 1
- RBXVOQPAMPBADW-UHFFFAOYSA-N nitrous acid;phenol Chemical class ON=O.OC1=CC=CC=C1 RBXVOQPAMPBADW-UHFFFAOYSA-N 0.000 description 1
- 150000004866 oxadiazoles Chemical class 0.000 description 1
- 150000002916 oxazoles Chemical class 0.000 description 1
- 229910052763 palladium Inorganic materials 0.000 description 1
- 230000000737 periodic effect Effects 0.000 description 1
- INAAIJLSXJJHOZ-UHFFFAOYSA-N pibenzimol Chemical compound C1CN(C)CCN1C1=CC=C(N=C(N2)C=3C=C4NC(=NC4=CC=3)C=3C=CC(O)=CC=3)C2=C1 INAAIJLSXJJHOZ-UHFFFAOYSA-N 0.000 description 1
- OXNIZHLAWKMVMX-UHFFFAOYSA-N picric acid Chemical compound OC1=C([N+]([O-])=O)C=C([N+]([O-])=O)C=C1[N+]([O-])=O OXNIZHLAWKMVMX-UHFFFAOYSA-N 0.000 description 1
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 229920003227 poly(N-vinyl carbazole) Polymers 0.000 description 1
- 238000006068 polycondensation reaction Methods 0.000 description 1
- 229920000647 polyepoxide Polymers 0.000 description 1
- 229920000728 polyester Polymers 0.000 description 1
- 229920000573 polyethylene Polymers 0.000 description 1
- 229920000642 polymer Polymers 0.000 description 1
- 229910052700 potassium Inorganic materials 0.000 description 1
- 239000011591 potassium Substances 0.000 description 1
- DNXIASIHZYFFRO-UHFFFAOYSA-N pyrazoline Chemical compound C1CN=NC1 DNXIASIHZYFFRO-UHFFFAOYSA-N 0.000 description 1
- LXZIFLXVFHVUKK-UHFFFAOYSA-N pyrene-1,4,5,10-tetracarboxylic acid Chemical compound OC(=O)C1=C2C(C(=O)O)=CC=C(C(C(O)=O)=C3C(O)=O)C2=C2C3=CC=CC2=C1 LXZIFLXVFHVUKK-UHFFFAOYSA-N 0.000 description 1
- RCYFOPUXRMOLQM-UHFFFAOYSA-N pyrene-1-carbaldehyde Chemical compound C1=C2C(C=O)=CC=C(C=C3)C2=C2C3=CC=CC2=C1 RCYFOPUXRMOLQM-UHFFFAOYSA-N 0.000 description 1
- PMWXGSWIOOVHEQ-UHFFFAOYSA-N pyridine-2,6-dicarbaldehyde Chemical compound O=CC1=CC=CC(C=O)=N1 PMWXGSWIOOVHEQ-UHFFFAOYSA-N 0.000 description 1
- 125000004076 pyridyl group Chemical group 0.000 description 1
- 125000002943 quinolinyl group Chemical group N1=C(C=CC2=CC=CC=C12)* 0.000 description 1
- 150000004053 quinones Chemical class 0.000 description 1
- PYWVYCXTNDRMGF-UHFFFAOYSA-N rhodamine B Chemical compound [Cl-].C=12C=CC(=[N+](CC)CC)C=C2OC2=CC(N(CC)CC)=CC=C2C=1C1=CC=CC=C1C(O)=O PYWVYCXTNDRMGF-UHFFFAOYSA-N 0.000 description 1
- 229940043267 rhodamine b Drugs 0.000 description 1
- 229910052703 rhodium Inorganic materials 0.000 description 1
- 239000010948 rhodium Substances 0.000 description 1
- MHOVAHRLVXNVSD-UHFFFAOYSA-N rhodium atom Chemical compound [Rh] MHOVAHRLVXNVSD-UHFFFAOYSA-N 0.000 description 1
- 229910052707 ruthenium Inorganic materials 0.000 description 1
- KZUNJOHGWZRPMI-UHFFFAOYSA-N samarium atom Chemical compound [Sm] KZUNJOHGWZRPMI-UHFFFAOYSA-N 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 229940124513 senna glycoside Drugs 0.000 description 1
- PJANXHGTPQOBST-UHFFFAOYSA-N stilbene Chemical compound C=1C=CC=CC=1C=CC1=CC=CC=C1 PJANXHGTPQOBST-UHFFFAOYSA-N 0.000 description 1
- 235000021286 stilbenes Nutrition 0.000 description 1
- 238000003860 storage Methods 0.000 description 1
- YJPVTCSBVRMESK-UHFFFAOYSA-L strontium bromide Chemical compound [Br-].[Br-].[Sr+2] YJPVTCSBVRMESK-UHFFFAOYSA-L 0.000 description 1
- 229910001625 strontium bromide Inorganic materials 0.000 description 1
- 229940074155 strontium bromide Drugs 0.000 description 1
- 125000001424 substituent group Chemical group 0.000 description 1
- 125000000446 sulfanediyl group Chemical group *S* 0.000 description 1
- UGNWTBMOAKPKBL-UHFFFAOYSA-N tetrachloro-1,4-benzoquinone Chemical compound ClC1=C(Cl)C(=O)C(Cl)=C(Cl)C1=O UGNWTBMOAKPKBL-UHFFFAOYSA-N 0.000 description 1
- AUHHYELHRWCWEZ-UHFFFAOYSA-N tetrachlorophthalic anhydride Chemical compound ClC1=C(Cl)C(Cl)=C2C(=O)OC(=O)C2=C1Cl AUHHYELHRWCWEZ-UHFFFAOYSA-N 0.000 description 1
- YLQBMQCUIZJEEH-UHFFFAOYSA-N tetrahydrofuran Natural products C=1C=COC=1 YLQBMQCUIZJEEH-UHFFFAOYSA-N 0.000 description 1
- WEQHQGJDZLDFID-UHFFFAOYSA-J thorium(iv) chloride Chemical compound Cl[Th](Cl)(Cl)Cl WEQHQGJDZLDFID-UHFFFAOYSA-J 0.000 description 1
- 229910052718 tin Inorganic materials 0.000 description 1
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 description 1
- 229910001887 tin oxide Inorganic materials 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 239000010936 titanium Substances 0.000 description 1
- FAQYAMRNWDIXMY-UHFFFAOYSA-N trichloroborane Chemical compound ClB(Cl)Cl FAQYAMRNWDIXMY-UHFFFAOYSA-N 0.000 description 1
- ODHXBMXNKOYIBV-UHFFFAOYSA-N triphenylamine Chemical class C1=CC=CC=C1N(C=1C=CC=CC=1)C1=CC=CC=C1 ODHXBMXNKOYIBV-UHFFFAOYSA-N 0.000 description 1
- 150000004961 triphenylmethanes Chemical class 0.000 description 1
- DNYWZCXLKNTFFI-UHFFFAOYSA-N uranium Chemical compound [U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U] DNYWZCXLKNTFFI-UHFFFAOYSA-N 0.000 description 1
- 238000001771 vacuum deposition Methods 0.000 description 1
- 229910052720 vanadium Inorganic materials 0.000 description 1
- GPPXJZIENCGNKB-UHFFFAOYSA-N vanadium Chemical compound [V]#[V] GPPXJZIENCGNKB-UHFFFAOYSA-N 0.000 description 1
- JEVGKYBUANQAKG-UHFFFAOYSA-N victoria blue R Chemical compound [Cl-].C12=CC=CC=C2C(=[NH+]CC)C=CC1=C(C=1C=CC(=CC=1)N(C)C)C1=CC=C(N(C)C)C=C1 JEVGKYBUANQAKG-UHFFFAOYSA-N 0.000 description 1
- NAWDYIZEMPQZHO-UHFFFAOYSA-N ytterbium Chemical compound [Yb] NAWDYIZEMPQZHO-UHFFFAOYSA-N 0.000 description 1
- 229910052727 yttrium Inorganic materials 0.000 description 1
- 229910052725 zinc Inorganic materials 0.000 description 1
- 239000011701 zinc Substances 0.000 description 1
- 239000011592 zinc chloride Substances 0.000 description 1
- 235000005074 zinc chloride Nutrition 0.000 description 1
Landscapes
- Solid State Image Pick-Up Elements (AREA)
- Facsimile Heads (AREA)
Abstract
Description
【発明の詳細な説明】 (産業上の利用分野) 本発明は、ファクシミリ、イメージスキャナ。[Detailed description of the invention] (Industrial application field) The present invention is a facsimile machine and an image scanner.
デジタル複写機等における原稿読取装置に使用するイメ
ージセンサにHする。H is applied to an image sensor used in a document reading device in a digital copying machine or the like.
(従来の技術)
従来のイメージセンサは、MOS 、 CCD ナトO
IC技術を用いているが、それらのチップサイズは一般
に20〜30mと小さいので、読取画像の反射光像を縮
小投影するための光学系を必要とする。その九め、原稿
からイメージセンサとしてのICセンナ迄の光路長が大
きくなシ、装置の小型化が困難であシ、また結像調整が
複雑である等の欠点を有していた。(Prior art) Conventional image sensors include MOS, CCD
Although IC technology is used, the chip size thereof is generally as small as 20 to 30 m, so an optical system is required to reduce and project the reflected light image of the read image. Ninth, the optical path length from the original to the IC sensor as an image sensor is long, it is difficult to miniaturize the device, and image formation adjustment is complicated.
これらの欠点を解決するために、イメージセンサのサイ
ズを読取原稿の幅と同一となして、読取原稿の表面にイ
メージセンサをほぼ密着させて画像を読み取るようにし
た。いわゆる密着型イメージセンサが開発され市場に出
ている。このような密着型センナでは、 5e−As−
Te、 Ca8−Cd5@、 a−81:Hを真空蒸着
法、プラズマCVD法等によって成膜させた無機系光導
電薄膜を、光電変換部に用いたシ、CCDなどのチップ
を複数個用いている。In order to solve these drawbacks, the size of the image sensor is made the same as the width of the document to be read, and the image is read by bringing the image sensor into almost close contact with the surface of the document to be read. So-called contact image sensors have been developed and are on the market. In such a close contact type senna, 5e-As-
An inorganic photoconductive thin film made of Te, Ca8-Cd5@, a-81:H by vacuum evaporation method, plasma CVD method, etc. is used for the photoelectric conversion section, and multiple chips such as CCD or the like are used. There is.
(発明が解決しようとする課題)
しかしながら、このような従来の密着型イメージセンサ
においては、無機系光導電薄膜を形成するためのいずれ
の方法においても高い真空雰囲気が必要とされるために
、成膜コストが高く、均一な長尺の一次元イメージセン
サ、あるいは均一な広面積の二次元イメージセンサを作
成することは困難でめった。ま九、CCDなどのチップ
を複数個用いると、製蓋が高価格となるので、民生用へ
の普及の妨げとなっていた。(Problems to be Solved by the Invention) However, in such conventional contact-type image sensors, since a high vacuum atmosphere is required in any method for forming an inorganic photoconductive thin film, the formation process is difficult. Due to the high film cost, it is difficult and rare to create a uniform long one-dimensional image sensor or a uniform wide-area two-dimensional image sensor. If multiple chips such as CCD or CCD were used, the lid would be expensive, which hindered its popularization for consumer use.
本発明が解決しようとする課題は、かかる従来技術の問
題点を解決し、廉価に密着型イメージセンサを提供する
ととに6る。The problem to be solved by the present invention is to solve the problems of the prior art and to provide a contact type image sensor at a low cost.
(課題を解決するための手段)
本発明は、上記課題を解決する念めに、有機光導電体層
と、核層の上下に積層された表面金属電極と裏面金属電
極とを有し、前記有機光導電体層が電荷、発生剤と電荷
輸送剤とを含有することを特徴とするイメージセンサを
提供する。(Means for Solving the Problems) In order to solve the above problems, the present invention includes an organic photoconductor layer, a front metal electrode and a back metal electrode laminated above and below a core layer, An image sensor is provided, wherein the organic photoconductor layer contains a charge generating agent and a charge transporting agent.
本発明のイメージセンサの有機光導電体層は。The organic photoconductor layer of the image sensor of the present invention is:
電荷発生剤を含有する電荷発生層と電荷輸送剤を含有す
る電荷輸送層を積層し九機能分離型であっても、電荷発
生剤と電荷輸送剤を1つの1に含有する単層型であって
も良い。Even if it is a nine-functional separated type in which a charge generation layer containing a charge generation agent and a charge transport layer containing a charge transport agent are laminated, it is a single layer type containing a charge generation agent and a charge transport agent in one layer. It's okay.
電荷発生剤としては、ak々の顔料が使用でき。As the charge generating agent, various pigments can be used.
例えは、アゾ系顔料、キノン系顔料、アズレニウム顔料
、スフウニアリウム系顔料、ピリリウム系顔料、シアニ
ン系顔料、ペリレン系顔料、インジゴ系顔料、ビスベン
ゾイミダゾール系顔料、フタロシアニン系顔料、キナク
シトン系顔料、キノリン系顔料等が挙げられる。Examples include azo pigments, quinone pigments, azulenium pigments, sulfuniarium pigments, pyrylium pigments, cyanine pigments, perylene pigments, indigo pigments, bisbenzimidazole pigments, phthalocyanine pigments, quinaxtone pigments, and quinoline pigments. Examples include pigments.
アゾ系顔料としては1例えは、一般式
(式中、2はNo CN、Ct、Br、H,CH5,
OCH3゜0C2H5,0H1−N(C2H5)2を表
わす。)で表わされる化合物の如きアゾ顔料;一般式ア
ルキル基を表わし、R9はフェニル基、ff1i、換フ
ェニル基を表わし、X及びYは各々独立的ICNo2、
CN、 H,CH,、OCH3,QC2H5,01(、
CL、Br、 −N(c2)L5)2を表わす。)
で表わされる化合物の如きジスアゾ顔料が挙げられる。An example of an azo pigment is a general formula (wherein 2 is No CN, Ct, Br, H, CH5,
Represents OCH3°0C2H5,0H1-N(C2H5)2. ); represents an alkyl group of the general formula, R9 represents a phenyl group, ff1i, substituted phenyl group, X and Y each independently IC No. 2;
CN, H, CH,, OCH3, QC2H5,01(,
CL, Br, -N(c2)L5)2. ) Disazo pigments such as compounds represented by:
キノン系顔料としては1例えは、ア/トアントロン、ヒ
ランスロン、ジベンズピレンキノン、ピレンキノン、
3.4.9.10−ジベンズピレンキノン。Examples of quinone pigments include a/toanthrone, hylanthrone, dibenzpyrenequinone, pyrenequinone,
3.4.9.10-Dibenzpyrenequinone.
臭素化アントアントロン、臭素化ジベンズピレンキノン
、臭素化ピランスロン、アントラキノンチアゾール、フ
ラパンスロン等が挙ケラれる。Examples include brominated anthantrone, brominated dibenzpyrenequinone, brominated pyranthrone, anthraquinone thiazole, and furapanthrone.
ビリリウム系顔料としては、例えば、一般式R−NH−
C−CH−を表わし 17及びR8は低級(式中、 R
”、 Rb、 Rc、 Rd及ヒn” R各&fi立的
に水素原子、炭素原子数1〜15の脂肪族基又は芳香族
基を表わし、更に、R&と妙の対及びHdとReの対は
、協同してヒリリューム核を形成する閉壊し九アリール
項を形成するに必要な原子群を表わす。Xは、イオウ、
酸素又はセレンを表わし、2は陰イオン官能基を表わす
。)
で表わされる化合物等が挙げられる。As the biryllium pigment, for example, the general formula R-NH-
represents C-CH-, and 17 and R8 are lower (in the formula, R
", Rb, Rc, Rd and hin" R each independently represents a hydrogen atom, an aliphatic group having 1 to 15 carbon atoms, or an aromatic group, and furthermore, a pair of R& and Tad, and a pair of Hd and Re. represents the atomic group necessary to form the closed nine-aryl term that cooperates to form the hirylium nucleus. X is sulfur,
represents oxygen or selenium, and 2 represents an anionic functional group. ) and the like.
シアニン系顔料としては5例えは、−数式は水素原子、
メチル基、エチル基を表わす。)で表わされる化合物等
が挙げられる。Five examples of cyanine pigments are: -The formula is a hydrogen atom;
Represents a methyl group or an ethyl group. ) and the like.
ペリレン系顔料としては1例えは、−数式(式中、Rは
メチル基、エチル基又はアリル基を表わし、XはCL、
Br、 Iを表わし、Y及び2は各々独立的に酸素、
イオウ又はセレンを表わし、Aは
=CH−CH=C−CH=CH−CH= を表わし、Q
(式中、Qはアルキル基、アリル基、アルキルアリル基
、アルコキシル基、複素環置換基又はハロゲン原子を表
わす。)
で表わされる化合物及び−数式
(式中、2はCt又はメトキシ基である。)で表わされ
る化合物等が挙げられる。An example of a perylene pigment is - formula (wherein R represents a methyl group, ethyl group or allyl group, X represents CL,
Br, I, Y and 2 each independently represent oxygen,
represents sulfur or selenium, A represents =CH-CH=C-CH=CH-CH=, and Q
(In the formula, Q represents an alkyl group, an allyl group, an alkylaryl group, an alkoxyl group, a heterocyclic substituent, or a halogen atom.) ) and the like.
インジゴ系顔料としては、例えば、−数式又は−数式
υ
又は−数式
(式中、Rはアルキル基、アリール基、アミン基又はハ
ロゲン原子を表わし、X及びYは、各々独立的KNH,
O,S、 8・又はT・を表わす。)で表わされる化合
物等が挙げられる。Indigo-based pigments include, for example, the formula - or - formula υ or - formula (wherein R represents an alkyl group, an aryl group, an amine group, or a halogen atom, and X and Y are each independently KNH,
Represents O, S, 8 or T. ) and the like.
ビスペンシイミダゾール系顔料としては1例え(式中、
R9及びR10は、各々独立的に置換されていてもよい
アルキル基、置換されていてもよいアリール基、ハロゲ
ン原子、ニトロ基又はアミン基を表わし、更に碩ンゼン
項と共に組合壌を形成してもよい。)
で表わされる化合物、 1.4.5.8−テトラカルが
ン酸す7タリ/とへテロ環ジアミンとの反応によって得
られるヘテロ環を有する化合物等が挙げられる。An example of a bispenciimidazole pigment (in the formula,
R9 and R10 each independently represent an optionally substituted alkyl group, an optionally substituted aryl group, a halogen atom, a nitro group, or an amine group; good. ), and compounds having a heterocycle obtained by the reaction of 1.4.5.8-tetracarboxylic acid 7-tali/ with a heterocyclic diamine.
フタロシアニン系顔料としては1例えば、一般式(式中
、 x、、 x2. x、及びX4 は各々独立的に・
・ログン原子、ニトロ基、アミン基、アルキル基又はア
リール基を表わし、n、m、L及びkは各々独立的に0
〜4の整数を表わし1Mは、水素原子、ナトリウム、カ
リウム、銅、鉄、ベリリウム、マグネシウム、カルシウ
ム、亜鉛、カドミウム、バリウム、水銀、アルミニウム
、インジウム、ランタン、ネオジム、サマリウム、ユー
ロピウム、カドミウム、ジスプロシウム、ホルミウム、
エルビウム、ツリウム、イッテルビウム、ルテニウム、
チタン、スズ、ハフニウム、鉛、トリウム、バナジウム
、アンチモン、クロム、モリブデン、ウラン、マンがン
、鉄、コバルト、ニッケル、ロジウム、パラジウム、オ
ヌミウム、白金及びこれらの酸化物を表わし、Xは0〜
2の整数を表わす。)で表わされる化合物等が挙げられ
る。For example, the phthalocyanine pigment has the general formula (where x, , x2. x and X4 each independently represent
・Represents a logon atom, nitro group, amine group, alkyl group or aryl group, and n, m, L and k are each independently 0
Represents an integer of ~4, and 1M is a hydrogen atom, sodium, potassium, copper, iron, beryllium, magnesium, calcium, zinc, cadmium, barium, mercury, aluminum, indium, lanthanum, neodymium, samarium, europium, cadmium, dysprosium, holmium,
Erbium, thulium, ytterbium, ruthenium,
Represents titanium, tin, hafnium, lead, thorium, vanadium, antimony, chromium, molybdenum, uranium, manganese, iron, cobalt, nickel, rhodium, palladium, onumium, platinum and oxides thereof, and X is 0 to
Represents an integer of 2. ) and the like.
キナクリドン系顔料としては1例えば、−数式で表わさ
れる化合物又はメチル基もしくは塩素原子で置換された
上記化合物等が挙げられる。Examples of quinacridone pigments include compounds represented by the formula - or the above-mentioned compounds substituted with a methyl group or a chlorine atom.
キノリン系顔料としては1例えば、−数式(式中、Xは
I又はBrを表わし、Qはキノリン環を表わし、nは0
〜3の整数を表わす。)で表わされる化合物等が挙げら
れる。As a quinoline pigment, for example, - formula (wherein, X represents I or Br, Q represents a quinoline ring, and n is 0
Represents an integer from ~3. ) and the like.
電荷輸送剤としては、例えば、4−ジメチルアミノ−ぺ
/ジリデンーイソニコチン酸ヒドラジド、アントラセン
−9−アルデヒド−フェニル酢酸−ヒドラシンの如きヒ
ドラゾン系化合物;1−フェニル−5−(p−メトキシ
スチル)−5−(p−メトキシフェニル)−ピラゾリン
の如きピラゾリン!化合物; 2,5−ビス−(p−ア
ミノ−フェニル−(1) ) −1,3,4−オキサジ
アゾールの如きオキサジアゾール系化合物; 2− (
4’−ジメチル−アミノフェニル)−ベンゾオキサゾー
ルの如きオキサゾール系化合物の他、トリフェニルアミ
ン系化合物、トリフェニルメタン系化合物及びポリビ二
ルカルノ!ゾール、ポリシラン化合物の如き高分子半導
体等が挙げられるが、特にポリシラン化合物が好ましい
。Examples of charge transport agents include hydrazone compounds such as 4-dimethylamino-pe/zylidene-isonicotinic acid hydrazide and anthracene-9-aldehyde-phenylacetic acid-hydracine; )-5-(p-methoxyphenyl)-pyrazoline such as pyrazoline! Compounds; Oxadiazole compounds such as 2,5-bis-(p-amino-phenyl-(1))-1,3,4-oxadiazole; 2-(
In addition to oxazole compounds such as 4'-dimethyl-aminophenyl)-benzoxazole, triphenylamine compounds, triphenylmethane compounds, and polyvinylcarno! Examples include polymer semiconductors such as sol and polysilane compounds, and polysilane compounds are particularly preferred.
ポリシラン化合物としては、−数式
(式中、R、R,R、R,R及びRは各々狐立的にアル
キル基、アリール基、置換アルキル基、置換アリール基
及びアルコキシル基を表わし1m、n及びpは化合物中
の七ツマーユニットの割合を表わす数である。)
で表わされる化合物が挙げられる。The polysilane compound has the formula - (where R, R, R, R, R and R each represent an alkyl group, an aryl group, a substituted alkyl group, a substituted aryl group, and an alkoxyl group; (p is a number representing the proportion of heptad units in the compound).
上記−数式で表わされるポリシラン化合物の具体例とし
ては、ポリ(メチルフェニルシラン)。A specific example of the polysilane compound represented by the above formula is poly(methylphenylsilane).
ポリ(メチルフェニルシリレンーコージメチルシラン)
、/す(シクロヘキシルメチルシラン)、ポリ(ターシ
ャリ−ブチルメチルシラン)、ポリ(フェニルエチルシ
ラン)、ポリ(n−プロピルメチルシラン)、ポリ(p
−トリルメチルシラン)。Poly(methylphenylsilylene-codimethylsilane)
, /su(cyclohexylmethylsilane), poly(tert-butylmethylsilane), poly(phenylethylsilane), poly(n-propylmethylsilane), poly(p
-tolylmethylsilane).
ポリ(シクロトリメチレンシラン)、Iす(シクロテト
ラメチレンシラン)、ポリ(シクロペンタメチレンシラ
ン)、ポリ(ジーt−プチルーコージメチルシラン)、
ポリ(ジフェニルーコーフェニルメチルシラン)、ポリ
(シアノエチルメチルシラン)、ポリ(2−アセトキシ
エテルメチルシラン)、ポリ(2−カルデメトキシエチ
ルメチルシラン)、ポリ(フェニルメチルシラン)等が
挙げられる。Poly(cyclotrimethylenesilane), Isu(cyclotetramethylenesilane), poly(cyclopentamethylenesilane), poly(di-t-butyl-codimethylsilane),
Examples include poly(diphenyl-cophenylmethylsilane), poly(cyanoethylmethylsilane), poly(2-acetoxyethylmethylsilane), poly(2-caldemethoxyethylmethylsilane), poly(phenylmethylsilane), and the like.
ポリシラン化合物は1例えば、ジノ・ログノシラン、ジ
ハロrノジシラン又はジハロゲノトリシランを、ナトリ
ウム、リチウム、マグネシウムの如き金属又は合金と反
応させて、脱ハロゲン重縮合唱せることによって製造す
ることができる。Polysilane compounds can be produced, for example, by reacting dino-lognosilane, dihalo-nodisilane, or dihalogeno-trisilane with a metal or alloy such as sodium, lithium, or magnesium, followed by dehalogenation polycondensation.
ポリシラン化合物の分子量は、300,000〜1.0
00,000の範囲が好ましい。The molecular weight of the polysilane compound is 300,000 to 1.0
A range of 00,000 is preferred.
有機光導電体層を形成する任意成分として、樹脂バイン
ダーが挙げられる。樹脂バインダーとしては1例えば、
ポリエステル、ポリビニルブチラール、ポリビニルカル
バゾール、ポリカー?ネート樹脂、エポキシ樹脂、ポリ
ヒドロキシエーテル樹脂等が挙げられる。An optional component for forming the organic photoconductor layer includes a resin binder. As a resin binder, for example,
Polyester, polyvinyl butyral, polyvinyl carbazole, polycar? Examples include nate resin, epoxy resin, polyhydroxy ether resin, and the like.
機能分離型の電荷発生層を形成する任意成分として1色
素増感剤あるいは化学増感剤を用いることができる。A single dye sensitizer or a chemical sensitizer can be used as an optional component for forming the functionally separated charge generation layer.
色素増感剤としては1例えは、マラカイトグリーン、ク
リスタルバイオレット、メチルバイオレット、ナイトブ
ルー ビクトリアブルー ローダミンB、カブリブルー
メチレンブルー フクシン、ローズペ/ガル、ポリメ
チン色素、チオキサンチン系顔料等が挙げられる。Examples of dye sensitizers include malachite green, crystal violet, methyl violet, night blue, Victoria blue, rhodamine B, fog blue, methylene blue, fuchsin, rosepe/gal, polymethine dyes, thioxanthin pigments, and the like.
化学増感剤としては1例えば、p−ベンゾキノン、2.
5−’)クロルベンゾキノン、ベンゾフェノンテトラカ
ルボン酸ジアンハイドライド、2.6−ジクロルベンゾ
キノン、クロルアニル、ナフトキノン−(1,4) 、
2.3−ジクロルナフトキノン−(1,4) 、アン
トラキノン、2−メチルアントラキノン、1.4−ジメ
チル−アントラキノン、1−クロルアントラキノン、ア
ントラキノン−2−カルがン酸、1.5−ジクロルアン
トラキノン、1−3t OA/ −4−ニトロアントラ
キノン、フェナントレン−キノン、アセナフテンキノン
、ピラントレンキノン、クリセン−キノン、チオ−、ナ
フテン−キノン、アントラキノン−1,8−ジスルホン
酸及びアントラキノン−2−アルデヒドの如きキノン類
;ドリフタロイル−ベンゼン、4−ニトロペンジアルデ
ヒド、2.6−シクロルベンズアルテヒド。Examples of chemical sensitizers include 1. For example, p-benzoquinone; 2.
5-') Chlorobenzoquinone, benzophenone tetracarboxylic acid dianhydride, 2,6-dichlorobenzoquinone, chloranil, naphthoquinone-(1,4),
2.3-dichloronaphthoquinone-(1,4), anthraquinone, 2-methylanthraquinone, 1,4-dimethyl-anthraquinone, 1-chloroanthraquinone, anthraquinone-2-carganic acid, 1,5-dichloroanthraquinone , 1-3t OA/ -4-nitroanthraquinone, phenanthrene-quinone, acenaphthenequinone, pyrantrenequinone, chrysene-quinone, thio-, naphthene-quinone, anthraquinone-1,8-disulfonic acid and anthraquinone-2-aldehyde. Quinones such as driftthaloylbenzene, 4-nitropendialdehyde, 2,6-cyclobenzaltehyde.
2−エトキシ−1−ナフトアルテヒド、アントラセン−
9−フルテヒド、ピレン−3−アルデヒドオキシインド
ール−3−アルテヒド、ピリジン−2,6−ジアルデヒ
ド、ビフェニル−4−アルデヒドの如きアルテヒド類;
例えFi4−クロル−3−二トロベンゼンーフオスホニ
ツクアシク)” C) 如Pi有機7オスホニツクアシ
ツド類:例えば4−ニトロフェノールの如きニトロフェ
ノール類;ピクリン酸;例えば無水酢酸、無水コ・・り
酸、無水マレイン酸、無水7タール酸、無水テトラクロ
ルフタル酸、ピレン−3,4,9,10−テトラカルボ
ン酸及びクリセン−2,3,8,9−無水テトラカルが
ン酸の如き無水酸類;周期律表のIB、n族乃至■族の
金属及びメタロイドのノ・ログン化金属例えば塩化アル
ミニウム、塩化亜鉛、塩化第二鉄、四塩化錫。2-Ethoxy-1-naphthaltehyde, anthracene-
Altehydes such as 9-flutehyde, pyrene-3-aldehyde oxindole-3-altehyde, pyridine-2,6-dialdehyde, and biphenyl-4-aldehyde;
C) Organic 7-phosphonic acids such as 4-chloro-3-nitrobenzene-phosphonic acids: nitrophenols such as 4-nitrophenol; picric acid; e.g. acetic anhydride, anhydrous ...of phosphoric acid, maleic anhydride, 7-taric anhydride, tetrachlorophthalic anhydride, pyrene-3,4,9,10-tetracarboxylic acid and chrysene-2,3,8,9-tetracarboxylic anhydride. Anhydrous acids such as metals of IB, groups N to II of the periodic table, and metalloids such as aluminum chloride, zinc chloride, ferric chloride, tin tetrachloride.
(塩化第二錫)、三塩化砒素、塩化第一錫、五塩化アン
チモン、塩化マグネシウム、臭化マグネシウム、臭化カ
ルシウム、沃化カルシウム、臭化ストロンチウム、臭化
クローム、塩化第一マンガン、塩化第一コバルト、塩化
第二コバルト、臭化第二銅、塩化セリウム、塩化トリウ
ム、三沢化砒素;例えば三弗化ホウ素及び三塩化ホウ素
の如きノ・ロダン化ホウ素化合物;例えばアセトフ二ノ
ン、ベンゾフェノン、2−7セチルーナフタリン、ベン
ジル、ペンゾイシ、5−ベンゾイルーアセナフテン、9
−7セチルーアントラセン、9−ベンゾイル−アントラ
セン、4−(4−ジメチルアミノ−シナモイル)−1−
アセチルベンゼン、アセトアセチックアシッド−アニリ
ド、インダンジオン−(1,3)、(1−3−ジケト−
ヒドロキノン)。(stannic chloride), arsenic trichloride, stannous chloride, antimony pentachloride, magnesium chloride, magnesium bromide, calcium bromide, calcium iodide, strontium bromide, chromium bromide, manganous chloride, stannous chloride Monocobalt, cobaltic chloride, cupric bromide, cerium chloride, thorium chloride, arsenic Misawa; boron compounds such as boron trifluoride and boron trichloride; such as acetophuninone, benzophenone, -7 Cetylnaphthalene, benzyl, penzoycin, 5-benzoylacenaphthene, 9
-7 cetyl-anthracene, 9-benzoyl-anthracene, 4-(4-dimethylamino-cinnamoyl)-1-
Acetylbenzene, acetoacetic acid-anilide, indanedione-(1,3), (1-3-diketo-
hydroquinone).
アセナフテンキノン−ジクロライド、アニシル、2.2
−ピリジル及びフリルの如きケトン類等が挙げられる。Acenaphthenequinone-dichloride, anisyl, 2.2
- Ketones such as pyridyl and furyl.
有機光導電体層の厚さは、任意の厚さであり得るが、単
層型の場合、0.1〜10μmの範囲が好ましい。機能
分離型の場合、電荷発生層の厚さは、0501〜0.5
μmの範囲が好ましく、電荷輸送層の厚さは、0.1〜
lOμmの範囲が好ましい。The thickness of the organic photoconductor layer may be arbitrary, but in the case of a single layer type, the thickness is preferably in the range of 0.1 to 10 μm. In the case of functionally separated type, the thickness of the charge generation layer is 0501 to 0.5
The thickness of the charge transport layer is preferably in the range of μm.
A range of 10 μm is preferred.
本発明のイメージセンサの製造方法としては、ガラス、
セラミック%ポリエチレンなどの基板に、スパッタリン
グ、蒸着等の方法によシ、アルミニウム、クロム、ニッ
ケル等の金属薄膜を形成した裏面金属電極上に、上記有
機光導電体層を形成し。The method for manufacturing the image sensor of the present invention includes glass,
The above-mentioned organic photoconductor layer is formed on a back metal electrode in which a thin metal film of aluminum, chromium, nickel, etc. is formed on a substrate of ceramic% polyethylene or the like by a method such as sputtering or vapor deposition.
更に有機光導電体層上に、スパッタリング、蒸着等の方
法によfi、ITo、rR化インジウム、酸化スズ等の
金属酸化物の透明薄膜から成る表面金属電極を形成する
方法が挙げられる。Further, there is a method of forming a surface metal electrode made of a transparent thin film of a metal oxide such as fi, ITo, indium rR, or tin oxide on the organic photoconductor layer by sputtering, vapor deposition, or the like.
(作用)
第1図忙おいて、有機光導電体層(2)と透明な表面金
属電極(3)及び裏面電極(4)とは、各々シlットキ
ー接合をし1両電極間に電圧印加し九際に生じる暗電流
を押さえている・
第2図は、本発明のイメージセンサの光電変換部を表面
電極(3)側から見た平面図であり、1列に配列された
複数のビットのうち、4ビツト(kl〜に4)のみを示
したものである。(Function) In Fig. 1, the organic photoconductor layer (2), the transparent front metal electrode (3), and the back electrode (4) are each connected in a shut-key manner, and a voltage is applied between the two electrodes. Figure 2 is a plan view of the photoelectric conversion section of the image sensor of the present invention viewed from the surface electrode (3) side, and shows a plurality of bits arranged in a row. Of these, only 4 bits (4 in kl~) are shown.
このように構成した密着型イメージセンサにおいて、原
稿の読取画像面で反射した光源からの光は、透明金属電
極(3)を通って、有機光導電体層(2)中の電荷発生
剤に吸収され、電荷担体を発生させる。従って、各ビッ
トを構成する表面金属電極(3)と裏面金属電極(4)
とを結線し、5v程度の低電圧を印加しておけば、各ビ
ットには原稿画像の対応する画素ビットの情報に応じ九
電流が流れるので、これらを画像信号として取シ出すこ
とができる。In the contact image sensor configured in this way, light from the light source reflected from the reading image surface of the original passes through the transparent metal electrode (3) and is absorbed by the charge generating agent in the organic photoconductor layer (2). and generate charge carriers. Therefore, the front metal electrode (3) and the back metal electrode (4) that constitute each bit
If these are connected and a low voltage of about 5V is applied, nine currents will flow through each bit in accordance with the information of the corresponding pixel bit of the original image, and these can be extracted as image signals.
暗電流低減のため、電極と有機光導電体層との間をブロ
ッキング接触の形にしており、その結果。To reduce dark current, a blocking contact is made between the electrode and the organic photoconductor layer.
1ピ2)当りの光電流が小さく、信号の検出方法として
は、蓄積型が好ましい。なお1.[動方式としては、直
接駆動型又はマトリックス駆動型が好ましい。The photocurrent per pin 2) is small, and the storage type is preferable as a signal detection method. Note 1. [As the driving method, a direct drive type or a matrix drive type is preferable.
(実施例)
実施例1
ガラス基体(1)上に、第2図に示したノナターンのア
ルミニウム製の裏面金属電極(4)を蒸着法によ?)
300 nmの厚さに形成し念。次に、ポリビニルブチ
ラール樹脂(種水化学社製「エスレツクBBH−3J)
1重量部、式
で表わされるベンジジン系ジスアゾ顔料2重量部とをジ
オキサ780重量部及びアセトン20重量部から成る混
合溶剤に分散させ、この分散液を用いて前記電極(4)
上に乾燥m膜厚0.1μmとなるように!11布、乾燥
させて電荷発生N(5)を形成した。(Example) Example 1 A nonaturn aluminum back metal electrode (4) shown in FIG. 2 was deposited on a glass substrate (1) by vapor deposition. )
The film was formed to a thickness of 300 nm. Next, polyvinyl butyral resin (“Eslec BBH-3J” manufactured by Tanezu Kagaku Co., Ltd.)
1 part by weight and 2 parts by weight of the benzidine-based disazo pigment represented by the formula are dispersed in a mixed solvent consisting of 780 parts by weight of dioxa and 20 parts by weight of acetone, and this dispersion is used to form the electrode (4).
Make sure the dry film thickness is 0.1 μm on top! No. 11 cloth was dried to form a charge-generating N (5).
更に、ポリ(メチルフェニルシラン)(分子量190.
000)10重量部、トルエン60重量部、ナト2ヒド
ロフ2フ30重量部から成る溶液を前記電荷発生層(5
)上に塗布、乾燥させて電荷輸送層(6)を形成するこ
とにより、厚さ1μmの有機光導電体層(2)を形成し
た。Furthermore, poly(methylphenylsilane) (molecular weight 190.
000), 60 parts by weight of toluene, and 30 parts by weight of Na2H2F2 were added to the charge generating layer (5
) and dried to form a charge transport layer (6), thereby forming an organic photoconductor layer (2) with a thickness of 1 μm.
次に、前記有機光導電体層(2)上K、スパッタリング
法により150 nmの厚さK ITOを形成して。Next, on the organic photoconductor layer (2), ITO with a thickness of 150 nm was formed by sputtering.
表面金141!極(3)を形成して、受光部を得た。Surface gold 141! A pole (3) was formed to obtain a light receiving section.
このようにして得られた層構造を有する受光部を蓄積型
の読出回路に組み込んで密着型イメージセンサを製造し
、その性能を評価した。その結果、緑色GaPIJDを
光源とし、100ルツクスの光を照。A contact image sensor was manufactured by incorporating the light receiving section having the layered structure thus obtained into an accumulation type readout circuit, and its performance was evaluated. As a result, a green GaPIJD was used as a light source, and a light of 100 lux was emitted.
射した時に、光応答速度100μ秒、光電流1nA/ビ
ット、Ijll暗電流比105を得、A4判の原稿を1
0秒(5ミリ秒/ライン)で読み取ることができた。When exposed to light, a photoresponse speed of 100 μs, a photocurrent of 1 nA/bit, and an Ijll dark current ratio of 105 were obtained.
It could be read in 0 seconds (5 milliseconds/line).
実施例2
実施例1と同様にしてアルミニウム製の裏面金属電極(
4)を得た。次に、α型チタニル7タロシアニン1重量
部を塩化タデレフ40重量部、 1.1.2−トリク四
ロエタン60重量部から成る混合溶剤に分散し、この分
散液1重量部とポリ(メチルフェニル−1−コーゾメチ
ルシラン)(分子量900.000)10重量部、トル
エン60重量部及びテトラヒドロ7ラン40重量部から
成る溶液1重量部をよく混合し、前記電極(4)上に乾
燥塗膜厚1μmとなるように塗装、乾燥させて有機光導
電体層(2)を形成した。Example 2 In the same manner as in Example 1, a back metal electrode made of aluminum (
4) was obtained. Next, 1 part by weight of α-type titanyl 7-thalocyanine was dispersed in a mixed solvent consisting of 40 parts by weight of Tadelev chloride and 60 parts by weight of 1.1.2-trictetraloethane, and 1 part by weight of this dispersion and poly(methylphenyl- 1 part by weight of a solution consisting of 10 parts by weight of 1-cosomethylsilane (molecular weight 900.000), 60 parts by weight of toluene, and 40 parts by weight of tetrahydro-7rane were mixed well, and a dry coating thickness was formed on the electrode (4). It was coated to a thickness of 1 μm and dried to form an organic photoconductor layer (2).
更に、前記有機光導電体層(2)上に、スパッタリング
法によ’) 150 nmの厚さK ITOを形成して
、表面金属電極(3)を形成して、受光部を得た。Furthermore, a 150 nm thick KITO film was formed on the organic photoconductor layer (2) by a sputtering method, and a surface metal electrode (3) was formed to obtain a light receiving section.
このようにして得られた層構造を有する受光部を1発光
波長570 nmのLEDを光源とする蓄積型の読出回
路に組み込んで密着型イメージセンサを製造し、その性
能を評価した。その結果、100ルツクスの光を照射し
た時に、光応答速度100μ秒、光電流1nA/ピッ)
、F!A暗電流比IOを得、A4判の原稿を10秒(5
ミリ秒/ライン)で読み取ることができた。A contact type image sensor was manufactured by incorporating the light receiving section having the layered structure thus obtained into an accumulation type readout circuit using an LED with an emission wavelength of 570 nm as a light source, and its performance was evaluated. As a result, when irradiated with 100 lux light, the photoresponse speed was 100 μs and the photocurrent was 1 nA/pic).
,F! A dark current ratio IO was obtained, and an A4 size original was heated for 10 seconds (5
It could be read in milliseconds/line).
(発明の効果)
本発明によれば、光電変換部を有機光導電体を用いて構
成しているので、安価でしかも大面積のイメージセンサ
を作製することができる。すなわち、有機光導電体は、
無機光導電体と違って、塗布によって成膜でき、柔軟性
に富むので基体を自由に遺ぶことができるので、安価な
イメージセンサを得ることができる。そして、Ik布に
よって。(Effects of the Invention) According to the present invention, since the photoelectric conversion section is constructed using an organic photoconductor, an inexpensive and large-area image sensor can be manufactured. That is, the organic photoconductor is
Unlike inorganic photoconductors, it can be formed into a film by coating, and because it is highly flexible, the substrate can be left on freely, making it possible to obtain an inexpensive image sensor. And by Ik cloth.
長尺、あるいは広面積の均一な有機光導電体の層を簡単
に形成できるので、長尺−次元あるいは広面積二次元の
密着型イメージセンサを容易に作成することができる。Since a long or wide-area uniform organic photoconductor layer can be easily formed, a long-dimensional or wide-area two-dimensional contact image sensor can be easily produced.
また1本発明によれば1色素の添加によってカラーセン
サへの展開を容易に行なうことができる。Furthermore, according to the present invention, it can be easily developed into a color sensor by adding one dye.
第1図は1本発明による密着型イメージセンサの断面図
であシ、第2図はその平面図であり、第3図〜第5図は
有機光導電体層の構成例である。
1・・・基体、2・・・有機光導電体層、3・・・表面
金属電極、4・・・裏面金属電極、5,9・・・電荷発
生層、7・・・電荷発生剤、6.10・・・電荷輸送層
、8・・・電荷輸送剤。
第
第
図
図
第
第
第
図
図
図
手 続 補 正 書(自発)
平成1年3月誹己日
特許庁長官 吉 1)文 毅 殿
1、事件の表示
昭和63年特許願第308840号
−1発明の名称
イメージセンサ
3、補正をする者
事件との関係 特許出願人
〒174 東京都板橋区坂下三丁目35番58号(2
88)大日本インキ化学工業株式会社代表者 川
村 茂 邦
4、代理人
〒103 東京都中央区日本橋三丁目7番20号1正
の対象
6、補正の内容
(1)明細書第3頁第2行目における
r Ca5−CdSe、 J ヲ
r Cd5−CdSe 、 Jに
補正す゛る。
(2) 明細書第4頁第11行目〜第13行目におけ
る
「アズレニウム顔料・・・シアニン系顔料」を「アズレ
ニウム染料、スフウニアリウム系染料、ピリリウム系染
料、シアニン系染料」に補正する。
(3) 明細書第6頁第2行目〜第4行目における「
X及びYは・・・を表わす。」を
「XはNO2,CN 、 H、CH,、OCH3,QC
2H5,Of(。
CL + Br e −N(C2H5) 2を表わし、
YはOHを表わす。」に
補正する。
(4) 明細書第7頁第2行目における「ヒリリーーム
核」を
「ピリリウム核」に
補正する。
(5) 明細書第7頁第7行目における「シアニン系
顔料」を
「シアニン系染料」に
補正する。
(6)明M書第8頁第6行目〜第7行目における「複素
環置換基又はハロダン原子」を
「置換基を有する複素環」に
補正する。
(7)明細書第1O頁最下行の構造式を「
に補正する。
(8)明細書筒1.3頁第14行目〜第15行目におけ
る
「ポリ(メチルフェニルシリレンーコージメチルシラン
)」を
「ポリ(メチルフェニルーコージメチルシラン)」に
補正する。
(9) 明細書筒14頁躯17行目〜第18行目にお
ける
r 300,000〜1,000,000Jをr 50
,000〜2,000,000 Jに補正する。
01 明細書@20頁第10行目における「ベンジジ
ン系」を
「スチルベン系」忙
補正する。
aυ 明細書第20頁第16行目におけるr190,0
OOJを
r 70,000 Jに
補正する。
αの 明細書第22頁第1行目〜第4行目における
「ポリ(メチルフェニル−1−コージメ¥ルシラン)・
・・40重量部」を
「ポリ(メチルフェニルーコージメチルシラン)(分子
量500,000)10重量部、トルエン60重量部及
びテトラヒドロフラン30重量部Jに
補正する。
以上FIG. 1 is a sectional view of a contact type image sensor according to the present invention, FIG. 2 is a plan view thereof, and FIGS. 3 to 5 are examples of the structure of an organic photoconductor layer. DESCRIPTION OF SYMBOLS 1... Substrate, 2... Organic photoconductor layer, 3... Surface metal electrode, 4... Back metal electrode, 5, 9... Charge generation layer, 7... Charge generation agent, 6.10... Charge transport layer, 8... Charge transport agent. Figure Figure Figure Figure 1 Procedures Amendment (self-motivated) March 1999 Complaint Date Director General of the Patent Office Yoshiki 1) Moon Takeshi 1, Indication of the Case 1988 Patent Application No. 308840-1 Name of the invention: Image sensor 3, relationship with the person making the amendment case Patent applicant: 3-35-58 Sakashita, Itabashi-ku, Tokyo 174 (2)
88) Dainippon Ink & Chemicals Co., Ltd. Representative Kawa
Kuni Mura Shigeru 4, Agent Address: 103 3-7-20 Nihonbashi, Chuo-ku, Tokyo 1 True Subject 6, Contents of Amendment (1) r Ca5-CdSe, J Worr in the second line of page 3 of the specification Cd5-CdSe, corrected to J. (2) "Azulenium pigment...cyanine pigment" in lines 11 to 13 of page 4 of the specification is corrected to "azurenium dye, sufuuniarium dye, pyrylium dye, cyanine dye." (3) "In lines 2 to 4 of page 6 of the specification"
X and Y represent... ” to “X is NO2, CN, H, CH,, OCH3, QC
2H5,Of(. CL + Bre −N(C2H5) represents 2,
Y represents OH. ”. (4) "Pyrylium nucleus" in the second line of page 7 of the specification is corrected to "pyrillium nucleus." (5) "Cyanine pigment" on page 7, line 7 of the specification is corrected to "cyanine dye." (6) "Heterocyclic substituent or halodane atom" in Mei M, page 8, lines 6 to 7 is corrected to "heterocycle having a substituent." (7) The structural formula on the bottom line of page 10 of the specification is corrected to ``. " is corrected to "poly(methylphenyl-codimethylsilane)". (9) r 300,000 to 1,000,000J in lines 17 to 18 on page 14 of the specification cylinder to r 50
,000 to 2,000,000 J. 01 "Benzidine series" in the specification @ page 20, line 10 is corrected to "stilbene series". aυ r190,0 on page 20, line 16 of the specification
Correct OOJ to r 70,000 J. "Poly(methylphenyl-1-codimeylsilane)
...40 parts by weight" is corrected to "10 parts by weight of poly(methylphenyl-codimethylsilane) (molecular weight 500,000), 60 parts by weight of toluene, and 30 parts by weight J of tetrahydrofuran.
Claims (1)
属電極と裏面金属電極とを有し、前記有機光導電体層が
電荷発生剤と電荷輸送剤とを含有することを特徴とする
イメージセンサ。 2、電荷輸送剤がポリシラン化合物である請求項1記載
のイメージセンサ。 3、ポリシラン化合物が一般式 ▲数式、化学式、表等があります▼ (式中、R^1、R^2、R^3、R^4、R^5及び
R^6は各々独立的にアルキル基、アリール基、置換ア
ルキル基、置換アリール基及びアルコキシル基を表わし
、m、n及びpは化合物中のモノマーユニツトの割合を
表わす数である。) で表わされる化合物である請求項2記載のイメージセン
サ。[Scope of Claims] 1. An organic photoconductor layer, a front metal electrode and a back metal electrode laminated above and below the layer, the organic photoconductor layer containing a charge generating agent and a charge transporting agent. An image sensor characterized by containing. 2. The image sensor according to claim 1, wherein the charge transport agent is a polysilane compound. 3. Polysilane compounds have a general formula ▲ There are mathematical formulas, chemical formulas, tables, etc. ▼ (In the formula, R^1, R^2, R^3, R^4, R^5 and R^6 are each independently alkyl The image according to claim 2, which is a compound represented by the following formula: a group, an aryl group, a substituted alkyl group, a substituted aryl group, or an alkoxyl group, and m, n, and p are numbers representing the proportion of monomer units in the compound. sensor.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP63308840A JPH02155270A (en) | 1988-12-08 | 1988-12-08 | Image sensor |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP63308840A JPH02155270A (en) | 1988-12-08 | 1988-12-08 | Image sensor |
Publications (1)
Publication Number | Publication Date |
---|---|
JPH02155270A true JPH02155270A (en) | 1990-06-14 |
Family
ID=17985916
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP63308840A Pending JPH02155270A (en) | 1988-12-08 | 1988-12-08 | Image sensor |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPH02155270A (en) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2004186604A (en) * | 2002-12-06 | 2004-07-02 | Fuji Photo Film Co Ltd | Image recording medium |
WO2024190877A1 (en) * | 2023-03-16 | 2024-09-19 | Kepler株式会社 | Two-dimensional photosensor and manufacturing method of two-dimensional photosensor |
-
1988
- 1988-12-08 JP JP63308840A patent/JPH02155270A/en active Pending
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2004186604A (en) * | 2002-12-06 | 2004-07-02 | Fuji Photo Film Co Ltd | Image recording medium |
WO2024190877A1 (en) * | 2023-03-16 | 2024-09-19 | Kepler株式会社 | Two-dimensional photosensor and manufacturing method of two-dimensional photosensor |
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