JPH0215164A - Composite material - Google Patents
Composite materialInfo
- Publication number
- JPH0215164A JPH0215164A JP16616088A JP16616088A JPH0215164A JP H0215164 A JPH0215164 A JP H0215164A JP 16616088 A JP16616088 A JP 16616088A JP 16616088 A JP16616088 A JP 16616088A JP H0215164 A JPH0215164 A JP H0215164A
- Authority
- JP
- Japan
- Prior art keywords
- film layer
- phase
- intermetallic compound
- ions
- thin film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000002131 composite material Substances 0.000 title claims description 32
- 239000010409 thin film Substances 0.000 claims abstract description 41
- 239000000463 material Substances 0.000 claims abstract description 35
- 150000002500 ions Chemical class 0.000 claims abstract description 33
- 229910000765 intermetallic Inorganic materials 0.000 claims abstract description 23
- 229910001069 Ti alloy Inorganic materials 0.000 claims abstract description 10
- 229910052697 platinum Inorganic materials 0.000 claims abstract description 5
- 229910010038 TiAl Inorganic materials 0.000 claims description 7
- 229910052684 Cerium Inorganic materials 0.000 claims description 2
- 229910052746 lanthanum Inorganic materials 0.000 claims description 2
- 229910052735 hafnium Inorganic materials 0.000 claims 1
- 229910052727 yttrium Inorganic materials 0.000 claims 1
- 230000003647 oxidation Effects 0.000 abstract description 23
- 238000007254 oxidation reaction Methods 0.000 abstract description 23
- 238000000034 method Methods 0.000 abstract description 11
- 230000001590 oxidative effect Effects 0.000 abstract description 10
- 238000009792 diffusion process Methods 0.000 abstract description 6
- 239000011248 coating agent Substances 0.000 abstract description 4
- 238000000576 coating method Methods 0.000 abstract description 4
- 229910010039 TiAl3 Inorganic materials 0.000 abstract description 3
- 239000010408 film Substances 0.000 abstract description 3
- 230000001681 protective effect Effects 0.000 abstract description 3
- 150000001875 compounds Chemical class 0.000 abstract description 2
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 abstract 1
- 229910052593 corundum Inorganic materials 0.000 abstract 1
- 238000002513 implantation Methods 0.000 abstract 1
- 229910001845 yogo sapphire Inorganic materials 0.000 abstract 1
- 239000010410 layer Substances 0.000 description 38
- 229910045601 alloy Inorganic materials 0.000 description 9
- 239000000956 alloy Substances 0.000 description 9
- 238000005468 ion implantation Methods 0.000 description 7
- 238000007747 plating Methods 0.000 description 5
- 238000007740 vapor deposition Methods 0.000 description 4
- 230000000052 comparative effect Effects 0.000 description 3
- 238000004544 sputter deposition Methods 0.000 description 3
- 239000000758 substrate Substances 0.000 description 3
- 238000001816 cooling Methods 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- 230000008021 deposition Effects 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 2
- 239000010931 gold Substances 0.000 description 2
- 229910052737 gold Inorganic materials 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- 229910052723 transition metal Inorganic materials 0.000 description 2
- 150000003624 transition metals Chemical class 0.000 description 2
- -1 Tj Al Inorganic materials 0.000 description 1
- 229910000838 Al alloy Inorganic materials 0.000 description 1
- 229910001020 Au alloy Inorganic materials 0.000 description 1
- 101100269328 Caenorhabditis elegans aff-1 gene Proteins 0.000 description 1
- 229910021330 Ti3Al Inorganic materials 0.000 description 1
- 230000001133 acceleration Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000005336 cracking Methods 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 239000003353 gold alloy Substances 0.000 description 1
- 239000003779 heat-resistant material Substances 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 238000001659 ion-beam spectroscopy Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 238000005240 physical vapour deposition Methods 0.000 description 1
- 239000011253 protective coating Substances 0.000 description 1
- 239000004575 stone Substances 0.000 description 1
- 239000002344 surface layer Substances 0.000 description 1
Abstract
Description
【発明の詳細な説明】
［産業−１−の利用分野］
本発明は、航空機や宇宙関連部品の軽量耐熱材料として
有用な複合材料に関するものである。DETAILED DESCRIPTION OF THE INVENTION [Field of Application in Industry-1-] The present invention relates to a composite material useful as a lightweight heat-resistant material for aircraft and space-related parts.
［従来の技術及び課題］
Ｔ１又はＴｉ合金は、軽量で比強度か高いため、航空機
や宇宙関連の各種部品として開発されてきたか、最近、
高温祠料としても注１」されている。[Prior art and issues] T1 or Ti alloys are lightweight and have high specific strength, so they have been developed as various parts for aircraft and space.
It is also noted 1 as a high-temperature amulet.
しかしなから、Ｔ１又はＴｉ合金は高温耐酸化性が著し
く劣るため、使用温度が制限されるという問題かあった
。However, since T1 or Ti alloys have extremely poor high-temperature oxidation resistance, there is a problem in that the temperature at which they can be used is limited.
このようなことから、Ｔｉ又はＴｉ合金の基材上に高温
耐酸化性の優れたＴｉ Ａｌ基金属間化合物の薄膜層を
被覆して複合材料とすることが試みられている。しかし
ながら、かかる複合材料においても高温の酸化性雰囲気
に曝ずと、Ｔｉ Ａｌ基金属間化合物の薄膜層中のＡＪ
が基材側へ内方拡散し、次第にＡＪ２濃度の低い薄膜層
が形成されるようになり、最後には耐酸化性を有するＴ
ｊ Ａ、ｆｆ系金属間化合物の薄膜層か自失して耐酸化
性処理の効果が消滅してしまうという問題かあった。For this reason, attempts have been made to coat a Ti or Ti alloy base material with a thin film layer of a TiAl-based intermetallic compound having excellent high-temperature oxidation resistance to form a composite material. However, even in such a composite material, the AJ in the thin film layer of the TiAl-based intermetallic compound can be removed without being exposed to a high-temperature oxidizing atmosphere.
diffuses inward toward the base material, and a thin film layer with a low AJ2 concentration is gradually formed, and finally T, which has oxidation resistance,
j There was a problem that the thin film layer of the A, ff-based intermetallic compound would self-destruct and the effect of the oxidation-resistant treatment would disappear.
本発明は、上記従来の課題を解決するためになされたも
ので、軽量性、耐熱性に優れていると共に、高温下での
耐酸化性を改善した複合材料を提供し７ようとするもの
である。The present invention has been made to solve the above-mentioned conventional problems, and aims to provide a composite material that is lightweight and has excellent heat resistance, as well as improved oxidation resistance at high temperatures. be.
［課題を解決するための手段］
本発明は、ｐｔイオン又はＰｔとＡｌの両イオンのｌ＋
人により表面にＰｔ相もしくはＰｔ −Ａｌ相か形成さ
れたＴｉ又はＴｉ合金からなる基材と、この基材のＰｔ
相もしくはＰＬ−Ａｌ相が形成された表面に被覆された
Ｔｉ Ａｆ系金金属間化合物薄膜層とを具備したことを
特徴とする複合材料である。[Means for Solving the Problems] The present invention provides l+ of pt ions or both Pt and Al ions.
A base material made of Ti or a Ti alloy on which a Pt phase or a Pt-Al phase has been formed on the surface by humans, and a Pt
This is a composite material characterized by comprising a TiAf-based gold intermetallic compound thin film layer coated on a surface on which a phase or a PL-Al phase is formed.
上記Ｔｉ合金としては、例えばＴｉにＡ、ｆｆ、■、Ｍ
ｏ、ＣｒＳＭｎ、Ｆｅなとの遷移金属、及びこれらの遷
移金属と共に含有されるＣ１０からなる組成を挙げるこ
とができる。As the above Ti alloy, for example, Ti has A, ff, ■, M
Examples include compositions consisting of transition metals such as o, CrSMn, and Fe, and C10 contained together with these transition metals.
上記Ｔｉ ＡＪ系金属間化合物としては、Ｔｉ３Ａｌ、
Ｔｊ Ａｌ、ＴｉＡｌ３等を挙げることかできる。特に
、ＴｊＡｌ系金属間化合物の薄膜層による尚温での耐酸
化性はその表面にＡＪ２２０３保護彼膜か形成されるこ
とによってなされることから、該Ｔｉ ＡＪ系金属間化
合物としてはＡＩｍの多いＴｉＡｌ、Ｔｉ ＡＪ３を用
いることか望ましい。こうしたＴｉ ＡＪ系金属間化合
物の薄膜層の基材表面への被覆手段としては、各種のＣ
ＶＤ法、又は真空薄石法、高周波スパッタリング法、マ
クネトロンスパッタリング法、イオンビームスパッタリ
ング法なとのＰＶＤ法、或いは蒸着とイオン注入とを同
時に行なうイオンミキシング法等を採用し得るが、基材
界面での密着性を向−１−させる観点から前記イオンミ
キシング法が好適である。The Ti AJ-based intermetallic compound mentioned above includes Ti3Al,
Tj Al, TiAl3, etc. can be mentioned. In particular, since the oxidation resistance of a thin film layer of a TjAl-based intermetallic compound at still temperatures is achieved by the formation of an AJ2203 protective film on its surface, the TiAJ-based intermetallic compound should be TiAl with a large amount of AIm. , Ti AJ3 is preferably used. As a means for coating the substrate surface with such a thin film layer of Ti AJ-based intermetallic compound, various C
VD method, PVD method such as vacuum thin stone method, high frequency sputtering method, Macnetron sputtering method, ion beam sputtering method, or ion mixing method in which vapor deposition and ion implantation are performed simultaneously, etc. can be adopted, but the substrate interface The ion mixing method is preferred from the viewpoint of improving the adhesion.
また、本発明は−１−記基材表面にＳｉ Ｓｃ、Ｙ、
ＬａＸＣｅ及びＨｆから選はれる１種又は２種以上をイ
オン注入されたＴｊ Ａｌ基金属間化合物の薄膜層を被
覆したことを特徴とする複合材料である。Further, the present invention provides SiSc, Y,
This composite material is coated with a thin film layer of a Tj Al-based intermetallic compound ion-implanted with one or more selected from LaXCe and Hf.
［作用］
本発明によれば、Ｔｉ又はＴｉ合金からなる基材におけ
るｐｔイオン又はｐｔとＡｌの両イオンの注入によりｐ
ｔ相もしくはＰＬ −Ａｌ相が形成された表面にＴｉ
ＡＪ系金属間化合物の薄膜層を被覆することによって、
高温酸化性雰囲気に曝した場合に該薄層膜から拡散され
るＡｌは前記基材表面のｐｔ相もしくはＰｔ −Ａｌ相
と反応してＰｔ−ＡＪ化合物として固定化するため、該
薄膜層中のＡＪの基材側への拡散を防止できる。その結
果、Ｔｉ ＡＪ系金属間化合物の２層膜層中に充分な量
のＡＪ！を含有させることができるため、高温酸化性雰
囲気下においてＴｉ Ａ、ｅ系金属間化合物の薄膜層の
表層に酸化保護被膜として寄与するＡ Ｉ ２０ Ｂを
形成でき、Ｔｉ又はＴｉ合金の優れた軽量性、耐熱性と
共にＴｉ Ａｆ３ｆ属間化合物の薄膜層による高温耐酸
化性が効果的に付与された複合材料を得ることかできる
。また、Ｍ、利表面へのｐｔ相もしくはＰｔ−Ａｌ相の
形成を、イオン注入手段により行なうことによって基材
表面に高純度のｐｔ相もしくはＰｔ −Ａｌ２相を形成
できること、所定な原子数単位でかつ目的とした濃度分
布を有するｐｔ相もしくはＰｔ −Ａ、１２相を精度よ
く形成できること、Ｐｔ−Ａｌ２相を形成する際にｐｔ
とＡｌを各々独立的に制御して導入できること、等の利
点を有する。更に、Ｔｉ Ａｌ３金属間化合物の薄膜層
をイオンミキシング法により基材表面に形成することに
よって、基材表面でのミキシング作用により薄膜層の基
材に対する密着性を向上できる。しかも、基材と薄膜層
との間にそれらの組成的傾斜構造を有する中間層を形成
できるため、応力歪みを緩和できる。[Function] According to the present invention, by implanting pt ions or both pt and Al ions into a base material made of Ti or a Ti alloy, p
Ti on the surface where the t phase or PL-Al phase is formed.
By coating with a thin layer of AJ-based intermetallic compound,
When exposed to a high-temperature oxidizing atmosphere, Al diffused from the thin film reacts with the pt phase or Pt-Al phase on the surface of the base material and is fixed as a Pt-AJ compound. Diffusion of AJ toward the base material side can be prevented. As a result, a sufficient amount of AJ! Therefore, it is possible to form A I 20 B that serves as an oxidation protective film on the surface layer of the thin film layer of Ti A, e-based intermetallic compound in a high-temperature oxidizing atmosphere. It is possible to obtain a composite material which is effectively imparted with high-temperature oxidation resistance due to the thin film layer of the TiAf3f intermetallic compound as well as heat resistance. In addition, it is possible to form a highly purified pt phase or Pt-Al2 phase on the surface of the base material by forming the pt phase or Pt-Al phase on the substrate surface by ion implantation, and that In addition, it is possible to form a pt phase or a Pt-A,12 phase with a desired concentration distribution with high precision, and when forming a Pt-Al2 phase,
It has advantages such as being able to independently control and introduce Al and Al. Furthermore, by forming a thin film layer of the TiAl3 intermetallic compound on the surface of the base material by an ion mixing method, the adhesion of the thin film layer to the base material can be improved by the mixing action on the surface of the base material. Furthermore, since an intermediate layer having a compositionally graded structure can be formed between the base material and the thin film layer, stress strain can be alleviated.
また、基材表面にＳｉ、５ｃＳｙ、、Ｌａ、Ｃｅ及びＨ
ｒから選ばれる１種又は２種以上をイオン注入されたＴ
ｉ ＡＩ！系金属間化合物の薄膜層を被覆することによ
って、高温酸化性雰囲気で該薄膜層表面に形成された耐
酸化性保護被膜としてのＡ ｌ！ ２０３層の該薄膜層
に対する密着性を前記８１等のイオン注入成分により向
上できる。しかも、かかるＡ１２２０３層の密着性向上
成分はＴｉ Ａ、ｆ’系金金属間化合物薄膜層自体の耐
酸化性を阻害させないために該薄膜層に対して微量添加
する必要かあるが、イオン注入手法を採用することによ
って該成分を微量かつ正確に薄膜層に導入することか可
能となる。In addition, Si, 5cSy, La, Ce and H are added to the surface of the base material.
T ion-implanted with one or more selected from r
i AI! By coating a thin film layer of intermetallic compound, Al! as an oxidation-resistant protective coating is formed on the surface of the thin film layer in a high temperature oxidizing atmosphere. The adhesion of the 203 layer to the thin film layer can be improved by the ion implantation component such as 81 mentioned above. Furthermore, it is necessary to add a small amount of the adhesion-improving component of the A12203 layer to the TiA, f'-based gold intermetallic compound thin film layer in order not to impede the oxidation resistance of the thin film layer itself. By employing this method, it becomes possible to introduce the component into the thin film layer in a trace amount and accurately.
「発明の実施例］ 以下、本発明の実施例を詳細に説明する。“Embodiments of the invention” Examples of the present invention will be described in detail below.
実施例１
まず、純Ｔｉを加工して９０ｍｍ Ｘ ’ａｏｍｍ Ｘ
５ ｍｍの板利を製作し７た後、この板材の片面を鏡
面研磨した。Example 1 First, pure Ti was processed to a size of 90mm x 'aomm
After manufacturing a 5 mm board, one side of the board was mirror polished.
つついて、この板材を蒸イご１とイオン注入機能を同−
真空内に有する真空チャンバ内に設置した後、質量分離
されたＡズイオンを加速電圧８０１（ｅＶ。This plate material has the same ion implantation function as the steamer.
After being placed in a vacuum chamber in a vacuum, the mass-separated Az ions are accelerated at an accelerating voltage of 801 (eV).
ドース量１． Ｍ １０” ／ｃｒＡの条件で、Ｐｔイ
オンを加速電圧１１３０１ｃｅＶ、ドース量０．５ Ｘ
１０１７ ／ｃｄの条件で夫々板材にイオンｌ十人し
た。ひきつづき、同一チャンハ内においてＴｉ Ａｌ
（１：Ｉ ）合金のターゲットにスパッタ電圧３ｋＶ、
電流密度２．５ ｍ Ａ ／ ｃＭの条件でＡｒイオン
を衝突させてＴｉ Ａｆｆ１合金を板材にスパンタリン
グ蒸着を行ないなから、別のイオン源から電圧１００Ｖ
、電流密度０．３ｍＡ／ｃｎの条件で板材をＡｒイオン
アシスト処理を行なって板材のＰｔ −Ａ、ｆｆ相か形
成された表面に厚さ３μｍのＴｉ ＡＪ金合金らなる薄
膜層を形成して複合材料を製造した。Dose amount 1. Under the conditions of M 10”/crA, Pt ions were accelerated at a voltage of 11301ceV and a dose of 0.5X.
Ten ions were applied to each plate under the condition of 1017/cd. Continuing, TiAl in the same chamber
(1:I) sputtering voltage 3kV on alloy target,
The Ti Aff1 alloy was sputter-deposited on the plate material by colliding Ar ions at a current density of 2.5 mA/cM, and then a voltage of 100 V was applied from another ion source.
The plate material was subjected to Ar ion assist treatment at a current density of 0.3 mA/cn, and a thin film layer of TiAJ gold alloy with a thickness of 3 μm was formed on the surface of the plate material on which the Pt-A, ff phase was formed. A composite material was produced.
真空チャンバから取出した複合材料を肉眼及び光学顕微
鏡で観察した。その結果、複合材料表面に形成されたＴ
ｊ Ａ、ｌｌ’合金薄膜層のクラ・ンク、剥離等の欠陥
は全く認められなかった。The composite material taken out from the vacuum chamber was observed with the naked eye and with an optical microscope. As a result, T formed on the surface of the composite material
j A, ll' No defects such as cracking or peeling of the alloy thin film layer were observed.
実施例２
ます、Ｔ１合金（Ｂ Ａ）−４Ｖ−Ｔｉ）を加工して３
Ｇｍｍ Ｘ ３０ｍｍ Ｘ ５ ｍｍの板材を製作した
後、この板材の片面を鏡面研磨した。つづいて、この板
材を蒸着とイオン注入機能を同−真空内に有する真空チ
ャンバ内に設置した後、質量分離されたＰｔイオンを加
速電圧ＩＢＯｋｅＶ、 ドーズ量０．５ Ｘ １０”
／ｃｌの条件て板材にイオン注入した。Example 2 First, T1 alloy (B A)-4V-Ti) was processed and 3
After producing a plate material of Gmm x 30 mm x 5 mm, one side of this plate material was mirror polished. Next, this plate material was placed in a vacuum chamber that has vapor deposition and ion implantation functions in the same vacuum, and then the mass-separated Pt ions were heated at an acceleration voltage of IBOkeV and a dose of 0.5 x 10".
Ions were implanted into the plate material under the condition of /cl.
ひきつつき、同一チャンバ内においてＥＢ蒸着法のトリ
プルハース方式によりＴ１を３．８人／ｓｅｃの蒸着速
度で、Ａｌを５．７ Ａ ／ ｓｅｅの蒸着速度で夫々
板材のイオン注入層表面に真空蒸着を行ないなから、パ
ケット型イオン源によりＡｒイオンを加速電圧１０ｋ
ｅ Ｖ、電流７５ｍ Ａの条件で板材に照射して、厚さ
３μｍのＴｉ Ａｌ！３合金からなる薄膜層を形成して
複合材料を製造した。Then, in the same chamber, T1 was vacuum-deposited on the surface of the ion-implanted layer of the plate material at a deposition rate of 3.8 people/sec and Al at a deposition rate of 5.7 A/see using the triple hearth method of EB evaporation. Ar ions are accelerated at a voltage of 10k using a packet type ion source.
The plate material was irradiated under the conditions of e V and a current of 75 m A to form a 3 μm thick TiAl! A composite material was manufactured by forming a thin film layer consisting of three alloys.
真空チャンバから取出した複合材料を肉眼及び光学顕微
鏡で観察した。その結果、複合材料表面に形成されたＴ
ｉ Ａｌ！合金薄膜層のクラック、剥離等の欠陥は全く
認められなかった。The composite material taken out from the vacuum chamber was observed with the naked eye and with an optical microscope. As a result, T formed on the surface of the composite material
iAl! No defects such as cracks or peeling of the alloy thin film layer were observed.
比較例］
まず、実施例］と同様な純Ｔｉからなる板材の鏡面研磨
したｊ′１面にＰＬめっきを施し、Ａｌの１１２０°Ｃ
てのパンク処理を行ない、更にｐｔめっきを施した後、
１１５０°Ｃての拡散処理を施した。つづいて、この板
材を蒸着とイオン注入機能を同−真空内に有する真空チ
ャンバ内に設置した後、実施例１と同様な方法によりｐ
ｔとＡ、ｆｌ’が拡散処理された板材表面に厚さ３μｍ
のＴｉ Ａｌ合金からなる薄膜層を形成して複合材料を
製造した。Comparative Example] First, PL plating was applied to the mirror-polished j′1 surface of a plate material made of pure Ti similar to Example],
After performing puncture treatment and further applying PT plating,
Diffusion treatment was performed at 1150°C. Subsequently, this plate material was placed in a vacuum chamber having vapor deposition and ion implantation functions in the same vacuum, and then plating was carried out in the same manner as in Example 1.
t, A, and fl' have a thickness of 3 μm on the diffusion-treated plate surface.
A composite material was manufactured by forming a thin film layer of Ti Al alloy.
比較例２
まず、実施例２と同様なＴｉ合金からなる板材の鏡面研
磨した片面にｐｔめっきを施し、Ａ、ＩＩ’の１２０°
Ｃでのバック処理を行ない、更にｐｔめっきを施した後
、１１５０°Ｃでの拡散処理を施した。つづいて、この
板４」を蒸着とイオン注入機能を同−真空内に有する真
空チャンバ内に設置した後、実施例２と同様な方法によ
り板材のＰｔ 、！＝Ａｌか拡散処理された表面に厚さ
３μｍのＴｉ Ａｆ３Ｔ３合金なる薄膜層を形成して複
合材料を製造した。Comparative Example 2 First, PT plating was applied to one mirror-polished surface of a plate material made of a Ti alloy similar to that in Example 2.
After performing back treatment with C and further PT plating, diffusion treatment was performed at 1150°C. Subsequently, this plate 4 was placed in a vacuum chamber having vapor deposition and ion implantation functions in the same vacuum, and then Pt,! = A composite material was manufactured by forming a thin film layer of TiAf3T3 alloy with a thickness of 3 μm on the surface treated with Al diffusion treatment.
しかして、本実施例１．２及び比較例１．２の複合材料
を９００°Ｃの高温酸化雰囲気中に８０時間放置して高
温酸化試験を行ない、試験後の各複合材料の外観を調べ
た。その結果を後掲する第１表に示す。Therefore, a high temperature oxidation test was conducted by leaving the composite materials of Example 1.2 and Comparative Example 1.2 in a high temperature oxidation atmosphere at 900°C for 80 hours, and the appearance of each composite material after the test was examined. . The results are shown in Table 1 below.
実施例３
実施例１と同様な方法により純Ｔ１からなる板材の鏡面
研磨した片面にＡ、ｆ？イオン及びｐｔイオンを注入し
た後、板材のＰｔ −Ａｌ１相か形成された表面に厚さ
３μｍのＴｉ Ａ、ｆｆ合金からなる薄膜層を形成した
。つついて、Ｙイオンを加速電圧１２０ ｋ ｅ Ｖ、
電流０．４ｍＡ、 ドーズ量５ ＸＩＯ” ／ａｊの条
件で薄膜層にイオン注入して複合材料を製造した。Example 3 A, f? After implanting the ions and pt ions, a thin film layer of TiA, ff alloy having a thickness of 3 μm was formed on the surface of the plate material on which the Pt-Al1 phase was formed. The Y ions were accelerated at a voltage of 120 k e V.
A composite material was manufactured by implanting ions into the thin film layer under conditions of a current of 0.4 mA and a dose of 5 XIO''/aj.
しかして、本実施例３及び前述した実施例１の複合材料
を酸化雰囲気下において９００℃まで昇温し、この後常
温まで下げる急熱急冷操作を１０回繰返す高温酸化試験
を行ない、試験後の各複合材料の酸化に伴う重量増及び
外観を調べた。その結果を後掲する第２表に示す。Therefore, a high-temperature oxidation test was conducted on the composite materials of Example 3 and Example 1 described above, in which the temperature was raised to 900°C in an oxidizing atmosphere, and then the rapid heating and cooling operation was repeated 10 times. The weight increase and appearance due to oxidation of each composite material were investigated. The results are shown in Table 2 below.
実施例４
実施例１と同様な方法により純Ｔｊからなる板材の鏡面
研磨した片面にＡＪイオン及びｐｔイオンを注入した後
、板材のＰｔ −Ａｌ相か形成された表面に厚さ３μ■
１のＴｉ Ａｊ！合金からなる薄膜層を形成した。つづ
いて、Ｓｉイオンを加速電圧１２［） ｋ ｅ Ｖ、電
流０．５ｍＡ、ドーズｍ２ Ｘ １０’ ” ／ ｔｉ
の条件で薄膜層にイオン注入し、更にＣｅイオンを加速
電圧１６０ ｋ ｅ Ｖ、電流０．１ｍＡ、ドース量２
Ｘ １０１” ／ （：Ａの条件で薄膜層にイオン注
入して腹合材料を製造した。Example 4 After AJ ions and PT ions were implanted into one mirror-polished surface of a plate made of pure Tj by the same method as in Example 1, a 3 μm thick layer was implanted on the surface of the plate on which the Pt-Al phase was formed.
1 Ti Aj! A thin film layer of the alloy was formed. Next, Si ions were accelerated at a voltage of 12 [) ke V, a current of 0.5 mA, and a dose of m2 x 10'''/ti.
Ions were implanted into the thin film layer under the conditions of
X 101''/(: A material was manufactured by implanting ions into the thin film layer under the conditions of A.
しかして、本実施例４及び前述した実施例１の複合材料
を酸化雰囲気下において９００℃まで昇温し、この後常
温まで下げる急熱急冷操作を２０回繰返す高温酸化試験
を行ない、試験後の各複合Ｈ料の酸化に伴う重量増及び
外観を調べた。その結果を後掲する第３表に示す。Therefore, a high-temperature oxidation test was performed on the composite materials of Example 4 and Example 1 described above, in which the temperature was raised to 900°C in an oxidizing atmosphere, and then the rapid heating and cooling operation was repeated 20 times. The weight increase and appearance due to oxidation of each composite H material were investigated. The results are shown in Table 3 below.
以上、後掲する第１表から第３表より明らかなように本
実施例１〜４の複合材料は、優れた高温耐酸化性を有す
ることがわかる。また、板材上のＴｉ Ａ、ｆｆ金属間
化合物からなる薄膜層にＹイオンを注入した実施例３の
複合材料は、同処理を施さない実施例１の複合材料に比
べて苛酷な条件下の高温酸化雰囲気においてより優れた
耐酸化性を有することがわかる。史に、板材上のＴｉ
Ａｌ金属間化合物からなる薄膜層にＳｉイオン及びＣｅ
イオンを注入した実施例４の複合制料は、同処理を施さ
ない実施例］の複合材料に比べてより苛酷な条件下の高
温酸化雰囲気において一層優れた耐酸化性を有すること
がわかる。As mentioned above, as is clear from Tables 1 to 3 below, it can be seen that the composite materials of Examples 1 to 4 have excellent high-temperature oxidation resistance. In addition, the composite material of Example 3, in which Y ions were implanted into the thin film layer made of TiA, ff intermetallic compound on the plate material, could withstand high temperatures under harsh conditions compared to the composite material of Example 1, which was not subjected to the same treatment. It can be seen that it has better oxidation resistance in an oxidizing atmosphere. Historically, Ti on plate material
Si ions and Ce are added to the thin film layer made of Al intermetallic compound.
It can be seen that the composite material of Example 4 in which ions were implanted has better oxidation resistance in a high-temperature oxidizing atmosphere under more severe conditions than the composite material of Example 4 which was not subjected to the same treatment.
［発明の効果］
以」−詳述した如く、本発明によれば軽量性、耐熱性に
優れていると共に、高温下での耐酸化性が著しく改善さ
れ、航空機や宇宙関連の各種部品として極めて有用な複
合材料を提供できる。[Effects of the Invention] As described in detail, the present invention has excellent lightness and heat resistance, as well as markedly improved oxidation resistance at high temperatures, making it extremely useful as various parts for aircraft and space. It can provide useful composite materials.
第１表 第３表Table 1 Table 3
Claims (2)
り表面にＰｔ相もしくはＰｔ−Ａｌ相が形成されたＴｉ
又はＴｉ合金からなる基材と、この基材のＰｔ相もしく
はＰｔ−Ａｌ相が形成された表面に被覆されたＴｉＡｌ
系金属間化合物の薄膜層とを具備したことを特徴とする
複合材料。(1) Ti on which a Pt phase or a Pt-Al phase is formed on the surface by implanting Pt ions or both Pt and Al ions.
Or a base material made of a Ti alloy and a TiAl coated on the surface of this base material on which a Pt phase or a Pt-Al phase is formed.
A composite material comprising a thin film layer of an intermetallic compound.
、Ｙ、Ｌａ、Ｃｅ及びＨｆから選ばれる１種又は２種以
上をイオン注入したものからなることを特徴とする請求
項１記載の複合材料。(2) The thin film layer of TiAl-based intermetallic compound is Si, Sc
2. The composite material according to claim 1, wherein the composite material is ion-implanted with one or more selected from , Y, La, Ce, and Hf.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP16616088A JPH0215164A (en) | 1988-07-04 | 1988-07-04 | Composite material |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP16616088A JPH0215164A (en) | 1988-07-04 | 1988-07-04 | Composite material |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH0215164A true JPH0215164A (en) | 1990-01-18 |
| JPH0587592B2 JPH0587592B2 (en) | 1993-12-17 |
Family
ID=15826183
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP16616088A Granted JPH0215164A (en) | 1988-07-04 | 1988-07-04 | Composite material |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0215164A (en) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH03100166A (en) * | 1989-09-14 | 1991-04-25 | Kobe Steel Ltd | Wear resistant ti or ti alloy member |
| JPH03193859A (en) * | 1989-12-22 | 1991-08-23 | Nippon Steel Corp | Structural material of ti-al intermetallic compound improved in oxidation resistance and production thereof |
| EP1505171A1 (en) * | 2003-08-05 | 2005-02-09 | General Electric Company | Ion implantation of turbine engine rotor component |
| CN108504977A (en) * | 2018-04-28 | 2018-09-07 | 江西科技师范大学 | A kind of preparation method of titanium alloy high temperature coatings |
-
1988
- 1988-07-04 JP JP16616088A patent/JPH0215164A/en active Granted
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH03100166A (en) * | 1989-09-14 | 1991-04-25 | Kobe Steel Ltd | Wear resistant ti or ti alloy member |
| JPH03193859A (en) * | 1989-12-22 | 1991-08-23 | Nippon Steel Corp | Structural material of ti-al intermetallic compound improved in oxidation resistance and production thereof |
| EP1505171A1 (en) * | 2003-08-05 | 2005-02-09 | General Electric Company | Ion implantation of turbine engine rotor component |
| US7455890B2 (en) * | 2003-08-05 | 2008-11-25 | General Electric Company | Ion implantation of turbine engine rotor component |
| CN108504977A (en) * | 2018-04-28 | 2018-09-07 | 江西科技师范大学 | A kind of preparation method of titanium alloy high temperature coatings |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0587592B2 (en) | 1993-12-17 |
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