JPH02148775A - Optical sensor - Google Patents

Optical sensor

Info

Publication number
JPH02148775A
JPH02148775A JP63303115A JP30311588A JPH02148775A JP H02148775 A JPH02148775 A JP H02148775A JP 63303115 A JP63303115 A JP 63303115A JP 30311588 A JP30311588 A JP 30311588A JP H02148775 A JPH02148775 A JP H02148775A
Authority
JP
Japan
Prior art keywords
resistor
voltage
phototransistor
light
diode
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP63303115A
Other languages
Japanese (ja)
Inventor
Jiro Nagaoka
二朗 長岡
Hirohisa Nakazato
中里 浩久
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp filed Critical NEC Corp
Priority to JP63303115A priority Critical patent/JPH02148775A/en
Publication of JPH02148775A publication Critical patent/JPH02148775A/en
Pending legal-status Critical Current

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  • Photo Coupler, Interrupter, Optical-To-Optical Conversion Devices (AREA)

Abstract

PURPOSE:To reduce connecting positions, to improve reliability and to decrease its cost by providing a light emitting element, a photodetector connected in series with the element, and a resistor connected in parallel with the photodetector. CONSTITUTION:Since a current from a light emitting diode 11 flows in series with a resistor 15 and a resistor 22 in a state that a light from the diode 11 docs not enter a photo-transistor 12, it becomes relatively small, and the voltage V1 of a terminal A becomes V1=[(V00-VF)/(R15+R22)]XR22, where VCC is the voltage of a DC power source 21, VF is the forward drop voltage of the diode 11, R15 is the resistance value of the resistor 15, and R22 is the resistance value of the resistor R22. When the light of the diode 11 enters the phototransistor 12, the phototransistor 12 can be sufficiently saturated by suitably selecting the resistance values of the resistors 15, 22. The voltage V2 of the terminal A in this case becomes V2=VCC-VF-Fsat, where Fsat is the collector-emitter saturated voltage of the phototransistor 12.

Description

【発明の詳細な説明】 〔産業上の利用分野〕 本発明は、光センサの構造に関する。[Detailed description of the invention] [Industrial application field] The present invention relates to the structure of an optical sensor.

〔従来の技術〕[Conventional technology]

従来、フォトインタラプタの構成においては、発光側の
LEDと受光側のフォトトランジスタとのリード線が別
々に設けられている。
Conventionally, in the configuration of a photointerrupter, lead wires are provided separately for an LED on a light emitting side and a phototransistor on a light receiving side.

〔発明が解決しようとする課題〕[Problem to be solved by the invention]

したがって、リード線は、4本あるいは少なくとも3本
引き出さなくてはならない。
Therefore, four or at least three lead wires must be drawn out.

〔課題を解決するための手段〕[Means to solve the problem]

本発明によれば、[発光素子と、前記発光素子と直列に
接続された受光素子と、前記受光素子に並列に接続され
た抵抗とを有することを特徴とする光センサ」が得られ
る。
According to the present invention, an optical sensor comprising a light-emitting element, a light-receiving element connected in series with the light-emitting element, and a resistor connected in parallel with the light-receiving element is obtained.

〔実施例〕〔Example〕

次に、本発明の一実施例を示した図面を参照して、本発
明をより詳細に説明する。
Next, the present invention will be described in more detail with reference to the drawings showing one embodiment of the present invention.

第1図を参照すると、本発明の一実施例においては、発
光ダイオード11とフォトトランジスタ12とは直列に
接続されている。さらに、フォトトランジスタ12のコ
レクタ・エミッタ間に抵抗15が並列に接続されている
。発光ダイオード11からの発光光は、光センサのケー
ス10の出射孔13から入射孔14に入射され、フォト
トランジスタ12に当たる。
Referring to FIG. 1, in one embodiment of the invention, a light emitting diode 11 and a phototransistor 12 are connected in series. Furthermore, a resistor 15 is connected in parallel between the collector and emitter of the phototransistor 12. The light emitted from the light emitting diode 11 enters the entrance hole 14 from the exit hole 13 of the case 10 of the optical sensor, and hits the phototransistor 12 .

第2図は、本実施例の光センサによる検出回路の一例を
示し、直流電源21のプラス端子をセンサの端子16に
、マイナス端子をグランドにそれぞれ接続し、センサ端
子18とグランドとの間に抵抗22を接続している。
FIG. 2 shows an example of a detection circuit using the optical sensor of this embodiment, in which the positive terminal of the DC power supply 21 is connected to the terminal 16 of the sensor, the negative terminal is connected to the ground, and the sensor terminal 18 is connected to the ground. A resistor 22 is connected.

本回路において、発光ダイオード11の発光光がフォト
トランジスタ12に当らない状態においては、発光ダイ
オードの電流は、抵抗15と抵抗22を直列に経由して
流れるため、比較的小さな電流となり、端子Aの電圧v
1は、 VCC:直流電源21の電圧 VP二二元光ダイオード11順方向降下電圧R1,:抵
抗15の抵抗値 R22:抵抗22の抵抗値 となる。
In this circuit, when the light emitted from the light emitting diode 11 does not hit the phototransistor 12, the current of the light emitting diode flows through the resistor 15 and the resistor 22 in series, so it becomes a relatively small current, and the current at the terminal A is voltage v
1 is as follows: VCC: Voltage VP of DC power supply 21; Forward drop voltage R1 of binary photodiode 11;: Resistance value of resistor 15; R22: Resistance value of resistor 22.

また、発光ダイオードの発光光がフォトトランジスタ1
2に当る状態においては、抵抗15および抵抗22の抵
抗値を適当に選ぶことにより、フォトトランジスタ12
を充分に飽和させるように設定可能であり、そのときの
端子Aの電圧V2は   V 2  = V CC−V
 p  −V matVaat:フォトトランジスタ1
2のコレクタ・エミッタ飽和電圧 となる。
Also, the light emitted from the light emitting diode is transmitted to the phototransistor 1.
2, by appropriately selecting the resistance values of the resistor 15 and the resistor 22, the phototransistor 12
It can be set so that it is fully saturated, and the voltage V2 of terminal A at that time is V 2 = V CC - V
p −V matVaat: Phototransistor 1
The collector-emitter saturation voltage is 2.

第3図は第2図の回路例における出力電圧と光をさえぎ
るシャッタの位置関係を示したもので、光をさえぎらな
い場合の出力V1と光をさえぎった場合の出力V2とを
示している。
FIG. 3 shows the positional relationship between the output voltage and the shutter that blocks light in the circuit example of FIG. 2, and shows the output V1 when the light is not blocked and the output V2 when the light is blocked.

なお、本実施例は、発光ダイオードとフォトトランジス
タとを使用したが、ランプ等の他の発光源や、cds等
の光感応素子を利用した場合も同様の結果が得られる。
Although this embodiment uses a light emitting diode and a phototransistor, similar results can be obtained by using other light emitting sources such as lamps or photosensitive elements such as CDS.

〔発明の効果〕〔Effect of the invention〕

以上説明したように、本発明によれば、光センサのリー
ド線を二本で構成することが可能となり、コネクタやハ
ンダ付は等の接続個所を低減し信頼性の向上とコストの
低減に効果がある。
As explained above, according to the present invention, it is possible to configure the optical sensor with two lead wires, reducing the number of connection points such as connectors and soldering, which is effective in improving reliability and reducing costs. There is.

【図面の簡単な説明】[Brief explanation of the drawing]

第1図は本発明の一実施例による光センサの回路図、第
2図は本実施例による検出回路の一例の回路図、第3図
は第2図に示した検出回路の出力電圧特性を示す図であ
る。 10・・・ケース、11・・・発光ダイオード、12・
・・フォトトランジスタ、13・・・出射孔、14・・
・入射孔、15・・・抵抗、16.18・・・端子、2
0・・・直流電源、22・・・抵抗。 代理人 弁理士  内 原  晋
Figure 1 is a circuit diagram of an optical sensor according to an embodiment of the present invention, Figure 2 is a circuit diagram of an example of a detection circuit according to this embodiment, and Figure 3 shows the output voltage characteristics of the detection circuit shown in Figure 2. FIG. 10... Case, 11... Light emitting diode, 12.
... Phototransistor, 13... Output hole, 14...
・Incidence hole, 15...Resistance, 16.18...Terminal, 2
0...DC power supply, 22...Resistor. Agent Patent Attorney Susumu Uchihara

Claims (1)

【特許請求の範囲】[Claims] 発光素子と、前記発光素子と直列に接続された受光素子
と、前記受光素子に並列に接続された抵抗とを有するこ
とを特徴とする光センサ。
An optical sensor comprising: a light-emitting element; a light-receiving element connected in series with the light-emitting element; and a resistor connected in parallel with the light-receiving element.
JP63303115A 1988-11-29 1988-11-29 Optical sensor Pending JPH02148775A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP63303115A JPH02148775A (en) 1988-11-29 1988-11-29 Optical sensor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP63303115A JPH02148775A (en) 1988-11-29 1988-11-29 Optical sensor

Publications (1)

Publication Number Publication Date
JPH02148775A true JPH02148775A (en) 1990-06-07

Family

ID=17917066

Family Applications (1)

Application Number Title Priority Date Filing Date
JP63303115A Pending JPH02148775A (en) 1988-11-29 1988-11-29 Optical sensor

Country Status (1)

Country Link
JP (1) JPH02148775A (en)

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01183861A (en) * 1988-01-19 1989-07-21 Gunma Nippon Denki Kk Photo-interrupter

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01183861A (en) * 1988-01-19 1989-07-21 Gunma Nippon Denki Kk Photo-interrupter

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