JPH02146733A - Manufacture of semiconductor device - Google Patents

Abstract

PURPOSE:To reduce a size of a substrate processing device of a large caliber, to reduce a moving distance of chemical and water on a substrate surface, to reduce residue of chemical and particle, and to improve cleaning capacity by rotating a wafer having a through hole in a center thereof by a hollow rotating shaft and by spraying high pressure gas to exhaust liquid toward the center from a suction port of the rotating shaft. CONSTITUTION:A wafer 4 having a through hole 41 at a center thereof is rotated by a hollow rotating shaft 51 which passes therethrough, and high pressure gas 61 is sprayed to a point on a radius of a surface of the wafer 4 to separate liquid on the surface of the wafer 4 into a center side and an outer periphery side. Liquid 71 separated toward the center is sucked from a suction port 51 which is provided to the rotating shaft 51 and exhausted and dried through a hollow section 53 of the rotating shaft 51. For example, a part of a circle of said through hole 41 is provided with a flat section 41a. The rotating shaft 51 is a rod member having a flat section corresponding to the through hole 41 of the wafer at the outer periphery thereof and is provided with a hollow section 53 which passes through in direction of the shaft at the center. Also provided are a plurality of suction ports 52 which are opened at a periphery of the shaft communicating with the hollow section 53 radially at each position whereon a plurality of wafers 4 are set respectively.

Description

[Detailed Description of the Invention] [Summary] This invention relates to a method for dehydrating and drying a chemical solution or cleaning water from the surface of a thin substrate such as a semiconductor wafer or a glass substrate having a through hole in the center in the manufacturing process of semiconductor devices. The purpose of this system is to reduce the installation space by downsizing large-diameter substrate processing equipment, reduce the distance that chemicals and water move on the substrate surface, reduce chemical residue and particle residue, and improve cleaning performance. , a wafer with a through hole in the center,
The wafer is rotated by a hollow rotating shaft passing through the hole, and high-pressure gas is blown onto a point on the radius of the wafer surface.
The liquid on the wafer surface is separated into a center side and an outer peripheral side, and the liquid separated toward the center is sucked through a suction port provided in the rotating shaft and discharged through a hollow part of the rotating shaft to dry it.

[Industrial application field]

The present invention relates to a method for dehydrating and drying a chemical solution or cleaning water from the surface of a thin plate-shaped substrate such as a semiconductor wafer or a glass substrate having a through hole in the center in a manufacturing process of a semiconductor device or the like.

Semiconductor wafers are immersed in cleaning water and chemical solutions during etching and film-forming pre-treatments, but these liquids must be completely dehydrated and dried before moving on to the next process. A device is used.

[Conventional technology]

FIG. 3 shows a conventional dehydration apparatus, in which a plurality of wafers 1 whose surfaces have been wetted by cleaning or chemical treatment are placed side by side in a parallel cassette carrier 2, and the plurality of wafers 1 are 2 radially around the rotation axis 31,
The wafer 1 was placed in a cylindrical rotating container 32, and the rotating shaft 31 was rotated at high speed to cause the liquid on the surface of the wafer 1 to be blown outward by centrifugal force for dehydration.

[Problem to be solved by the invention]

However, recently, the diameter of wafers has been increasing to improve mass productivity, but in the case of large-diameter wafers, the conventional dehydration drying method described above requires wafers to be placed around the rotation axis.
The problem is that the device is large (at least twice the diameter of the wafer and the dimension of the rotating shaft), and a large installation space is required.

Furthermore, as shown in FIG. 4, which shows the movement trajectory of the liquid on the wafer surface, the liquid 11 on the rotating shaft 31 side of the wafer 1 surface reaches the outside of the wafer and scatters to the outside.
It moves over the wafer 1 over a distance equal to the diameter of the wafer 1 as shown by arrow A. However, particles such as liquid and dust tend to remain in the traces of liquid movement, so
As the diameter increases, there is a problem in that liquid and particles remain during cleaning and drying, impeding the cleanliness of the wafer surface.

The present invention was created in view of the above-mentioned problems, and it is possible to reduce the installation area by downsizing large-diameter substrate processing equipment, and reduce the moving distance of chemical liquid and water on the substrate surface to prevent chemical liquid residue and particle residue. It is an object of the present invention to provide a method for manufacturing a semiconductor device that reduces the cleaning performance and improves the cleaning ability.

(Means for Solving the Problems) FIG. 1 is an explanatory diagram of the principle of the rotary drying method according to the present invention.

In order to solve the above problems, the rotary drying method of the present invention, as shown in FIG. A high-pressure gas 61 is blown onto a point on the radius of the surface of the wafer 4 to separate the liquid on the surface into the center side and the outer circumferential side, and the separated liquid 71 toward the center is sucked into the rotating shaft 51. The structure is such that suction is carried out through the opening 52 and discharged through the hollow part 53 of the rotary shaft 51 to dry it.

[Operation] If the pressure of the gas blown onto the wafer surface from the nozzle and the suction force of the suction port are appropriately determined in accordance with the rotational speed, the liquid wetting the wafer surface with the high-pressure gas will spread around the circumference 73 including the blowing point. It is separated into a center side and an outer peripheral side at the border.

The liquid 72 separated on the outer circumference side at the circumference 73 scatters from the outer circumference of the wafer 4, and the liquid 71 separated on the rotation axis side.
Since the liquid is sucked from the suction port 52, the moving distance of the liquid on the wafer surface is smaller than the wafer radius, and even if the wafer has a large diameter, there are fewer particles remaining on the liquid moving trajectory. In addition, since the wafer is arranged so that the rotation axis passes through the center, the external size of the equipment can be made smaller compared to conventional equipment that is arranged around the rotation axis, and the installation area does not need to be large even for large diameter wafers. .

〔Example〕

The present invention will be explained in detail below with reference to the accompanying drawings.

FIG. 2 is a diagram showing essential parts of an apparatus according to an embodiment of the manufacturing method of the present invention.

In order to carry out the present invention, a wafer 4 having a through hole 41 in the center is used. The through hole 41 has a flat part 41a in a part of the circle.
is the provision. The rotating shaft 51 of the drying device is a rod-shaped member having a flat part on the outer periphery that matches the through hole 41 of the wafer, and has a hollow part 53 penetrating in the axial direction at the center, and has a hollow part 53 at each position where a plurality of wafers 4 are set. It has a plurality of (four in the figure) suction ports 52 that communicate radially with the hollow portion 53 and open around the shaft.

A ring-shaped susceptor 54 on which the wafer 4 is placed is passed through the rotating shaft 51 and fixed to the rotating shaft 51 at a predetermined position with screws 55 or the like. When the wafer 4 to be processed is placed on the susceptor 54, the suction port 52 is located near the top surface of the wafer 4. After repeating the above procedure to set a predetermined number of wafers 4 on the rotating shaft 51, the rotating shaft 51 is connected to a rotation drive system of a drying apparatus (not shown).

The hollow portion 53 at the center of the rotating shaft 51 is configured to be suctioned as shown by arrow B by a suction means (not shown) of the drying device, and gas near the suction port 52 is sucked into the hollow portion 53 .

62 is a nozzle that blows out high pressure gas such as N2 or air.
It is disposed near the center of the upper surface of the set wafer 1 to be processed so as to blow out high pressure gas 61.

In this state, when the rotating shaft 51 is rotated at high speed while blowing out the high pressure gas 61 from the nozzle 62, the wafer 4 is
Since the flat part 41a of the wafer 4 is engaged with the rotating shaft 51, it is rotated by the rotating shaft 51, and the liquid film on the wafer surface is separated between the rotating shaft side (inside) and the outer side by the high pressure gas 51 sprayed onto the surface of the wafer 4. Divided into. Liquid separated to the outside 7
As in the conventional example, liquid 7I is scattered and removed from the periphery of the wafer 4 by centrifugal force, and the liquid 7I separated inside is removed by the suction port 52.
It is sucked in from the air and removed through the hollow part 53.

Note that if the high-pressure gas blown out from the nozzle 52 has a high temperature, drying can be performed at the same time.

〔Effect of the invention〕

As explained above, according to the manufacturing method of the present invention, a wafer having a through hole in the center is used, and the wafer is rotated around the center of the wafer, and the liquid on the center side surface is discharged from the suction port of the rotating shaft, so that a large amount of Even in an apparatus for wafers with a small diameter, the external size can be made small, the installation area does not increase, and the wafer can be cleaned well with less particle residue.

[Brief explanation of the drawing]

Fig. 1 is a diagram explaining the principle of the rotary drying method according to the present invention; Fig. 2 is a diagram showing the main parts of the apparatus according to the embodiment of the present invention; Fig. 3 is a diagram showing the conventional rotary drying method; The figure is a diagram showing the movement trajectory of the liquid on the wafer surface. In the figure, 4-wafer, 41-through hole, 41a-flat part, 51-rotation shaft, 52-suction port,
53 - Hollow part of rotating shaft 54 - Susceptor for placing wafer, 61 - High pressure gas, 62 -
High pressure gas nozzle 71 - liquid inside the nozzle, 72 - liquid outside the nozzle. Present invention 1; Diagram illustrating the rotating drying method. Figure 1. Figure 5. Figure 5.

Claims (1)

[Claims] A wafer (4) having a through hole (41) in the center is rotated by a hollow rotating shaft (51) passing through the through hole (41), and high pressure gas (
61) to separate the liquid on the surface of the wafer (4) into the center side and the outer circumferential side, and the separated liquid (7
1) is sucked through a suction port (52) provided on the rotating shaft (51) and discharged through a hollow portion (53) of the rotating shaft (51) to dry it.