JPH02145769A - Method and device for forming thin film - Google Patents
Method and device for forming thin filmInfo
- Publication number
- JPH02145769A JPH02145769A JP30178788A JP30178788A JPH02145769A JP H02145769 A JPH02145769 A JP H02145769A JP 30178788 A JP30178788 A JP 30178788A JP 30178788 A JP30178788 A JP 30178788A JP H02145769 A JPH02145769 A JP H02145769A
- Authority
- JP
- Japan
- Prior art keywords
- raw material
- thin film
- film forming
- substrate
- reaction chamber
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000010409 thin film Substances 0.000 title claims abstract description 64
- 238000000034 method Methods 0.000 title claims abstract description 24
- 239000002994 raw material Substances 0.000 claims abstract description 146
- 239000007788 liquid Substances 0.000 claims abstract description 65
- 239000000758 substrate Substances 0.000 claims abstract description 53
- 238000006243 chemical reaction Methods 0.000 claims abstract description 41
- 238000001704 evaporation Methods 0.000 claims abstract description 34
- 239000010408 film Substances 0.000 claims abstract description 21
- 230000008020 evaporation Effects 0.000 claims abstract description 19
- 238000010438 heat treatment Methods 0.000 claims abstract description 6
- 230000015572 biosynthetic process Effects 0.000 claims description 4
- 230000008016 vaporization Effects 0.000 claims description 2
- 238000009792 diffusion process Methods 0.000 abstract description 3
- 239000003708 ampul Substances 0.000 description 18
- 238000010586 diagram Methods 0.000 description 10
- 239000000463 material Substances 0.000 description 6
- 230000000694 effects Effects 0.000 description 3
- 239000007789 gas Substances 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- 229910052786 argon Inorganic materials 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 239000003085 diluting agent Substances 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 1
- 238000001556 precipitation Methods 0.000 description 1
- 239000012429 reaction media Substances 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 238000002230 thermal chemical vapour deposition Methods 0.000 description 1
- 238000005406 washing Methods 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/448—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials
- C23C16/4485—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials by evaporation without using carrier gas in contact with the source material
Landscapes
- Chemical & Material Sciences (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Chemical Vapour Deposition (AREA)
Abstract
Description
【発明の詳細な説明】
〔産業上の利用分野〕
木兄Ｆ！ＡＦｉ１例えばＣＶＤ法を用いて薄膜を形成す
る方法およびその方法の実施に直接使用するＣＶＤ装置
等の薄膜形成装置に関し、とくに薄膜形成装置の原料導
入方式に関するものである。[Detailed Description of the Invention] [Industrial Field of Application] Kinoe F! AFi1 relates to a method of forming a thin film using, for example, a CVD method and a thin film forming apparatus such as a CVD apparatus that is directly used to carry out the method, and particularly relates to a raw material introduction method of the thin film forming apparatus.
これまでＣＶＤ装置等で、蒸気圧の低い物質を原料物質
とする場合には、原料物質の保存タンクから反応室まで
の原料物質導入管の中での、原料物質の析出を防ぐため
に以下に述べるような工夫が必要であった。Until now, when using a material with low vapor pressure as a raw material in a CVD device, etc., the following steps were taken to prevent precipitation of the raw material in the raw material introduction pipe from the raw material storage tank to the reaction chamber. Such measures were necessary.
保存タンクから反応￥までのすべての配管全加熱）よび
保温可能な構造にする。または恒温層の中に収納するこ
とによｐ、原料物質の蒸気圧が原料タンク内の蒸気圧以
上に保たれる温度にする（従来技術１）。All piping from the storage tank to the reaction tank should be fully heated) and should have a structure that can be kept warm. Alternatively, by storing it in a constant temperature layer, the temperature is set such that the vapor pressure of the raw material is maintained higher than the vapor pressure in the raw material tank (Prior Art 1).
あるいは、原料物質の保存タンクからの取り出しｔ−窒
素あるいけ希ガスといった不活性な気体を用（へて／Ｆ
ブリングを用いて行い、充分希釈された状態として反応
ＭＩＣ導入するといった方法が用いられてき之（従来技
術“２）、。Alternatively, an inert gas such as nitrogen or a rare gas may be used to remove the raw material from the storage tank.
A method has been used in which the reaction is carried out using bling and the reaction MIC is introduced in a sufficiently diluted state (prior art "2").
〔発明が解決１−ようと′する絆題〕
従来技術１の方法には、原料タンクから反応室までを７
全に保温することは装置的（困難でおる、また完全な恒
温装置を作シ得たとして本、原料タンクから反応室まで
の分路を高温の状態に長時間保つことになるため、熱的
に不安定な原料物質は配管中で分解し、配管中に薄膜が
析出するために配管が詰まるといった問題があつ九。[The problem that the invention attempts to solve 1] The method of Prior Art 1 requires 7 steps from the raw material tank to the reaction chamber.
It is difficult to keep the temperature completely constant, and even if a complete constant temperature device was created, the shunt from the raw material tank to the reaction chamber would have to be kept at a high temperature for a long time, so The unstable raw material decomposes in the piping, and a thin film is deposited in the piping, causing problems such as clogging of the piping.
また、従来技術２の方法においては、蒸気圧の低い物質
の場合大量の希釈ガスを必要とする九めに、反応室への
原料物質の供給量が少なくなるといった問題がありた。In addition, the method of Prior Art 2 requires a large amount of diluent gas in the case of a substance with a low vapor pressure, and secondly, there are problems in that the amount of raw material supplied to the reaction chamber is reduced.
仁のように、反応装置の反応室中に原料物質を４、六）
る方法に装置的な制約があるために、ＣＶＤ（ＤＩｇ、
料物質の選択範囲が限られるという問題があった。4) Add the raw materials into the reaction chamber of the reactor, as shown in Figure 4).
CVD (DIg,
There is a problem in that the selection range of materials is limited.
本発明は、薄膜形成装置への原料導入方法に３＝・いて
、上記のような問題を解決するためになされ九もので、
薄膜形成を行う反応死中への原料物質の導入を安定かつ
太黛に行うことを可能にすることを目的とする。同時に
、これ壕で装置的な制約から制限されていた原料物質の
選択にも大きな自由度を与えることを目的にする。The present invention is directed to a method for introducing raw materials into a thin film forming apparatus, and has been made to solve the above-mentioned problems.
The purpose of this invention is to enable stable and timely introduction of raw material into a reaction medium for forming a thin film. At the same time, the aim is to provide a greater degree of freedom in the selection of raw materials, which was previously restricted due to equipment constraints.
本発明は上記目的ｆ達成する念め、薄膜を形成する方法
の第１の発明は、基板ホルダに載置した基板を反応室内
に配置し、前記反応室内に導入した薄膜形成原料を前記
基板上に拡散成膜させる薄膜形成法において、前記反応
室内の前記基板ホルダに載置した基板の近傍に薄膜形成
原料蒸発部を配置し、前記薄膜形成原料蒸発部に薄膜形
成原料を液体状態で導入し、前記薄膜形成原石蒸発部を
加熱して前記薄膜形成原料を蒸発気化させ、前記基板上
に前記薄膜形成原料を拡散成膜させることを特徴とする
。In order to achieve the above-mentioned object f, the first invention of the method for forming a thin film is to place a substrate placed on a substrate holder in a reaction chamber, and apply a thin film forming raw material introduced into the reaction chamber onto the substrate. In a thin film forming method in which a film is formed by diffusion, a thin film forming raw material evaporating section is arranged near the substrate placed on the substrate holder in the reaction chamber, and the thin film forming raw material is introduced in a liquid state into the thin film forming raw material evaporating section. , the thin film forming raw material is heated to evaporate the thin film forming raw material, and the thin film forming raw material is diffused and formed on the substrate.
ま士第１の発明の薄膜を形成する方法の実施に直接使用
する第２の発明の薄膜形成装置は、反応案内に基板を載
置した基板ホルダを配置し、前記反応室に設けた薄膜形
成原料導入部から導入する薄膜形成原料を前記基板に蒸
発２成膜を形成する薄膜形成装置にお込て、前記反応室
は、前記薄膜形成原料を液体状態で導入する薄膜形成原
料導入機構と、前記基板の近傍に配置した。前記薄膜形
成原料導入機構から導入し、溜め会薄膜形成原料を蒸発
させ、前記基板上に拡散１Ｍ、膜させる薄膜形成原料蒸
発部とを備えてなることを特徴とする。The thin film forming apparatus of the second invention, which is directly used for carrying out the method of forming a thin film of the first invention, includes a substrate holder on which a substrate is placed in the reaction guide, and a thin film forming apparatus provided in the reaction chamber. A thin film forming raw material introduced from a raw material introduction part is introduced into a thin film forming apparatus that forms an evaporated film on the substrate, and the reaction chamber includes a thin film forming raw material introduction mechanism that introduces the thin film forming raw material in a liquid state; It was placed near the substrate. The present invention is characterized by comprising a thin film forming raw material evaporating section that introduces the thin film forming raw material from the thin film forming raw material introducing mechanism, evaporates the collected thin film forming raw material, and diffuses the thin film forming raw material into a film on the substrate.
本発明の薄膜形成装置は、これまで反応室への原料物質
の導入を原料物質を気化して行っていたかわシに、液体
状態で反応室中の基板近傍まで導入し、その後基板表面
へ移動させる方法と、その方法を実現する薄膜形成装置
である。The thin film forming apparatus of the present invention introduces a raw material into a reaction chamber in a liquid state close to the substrate, instead of introducing the raw material into the reaction chamber by vaporizing the material, and then transfers it to the substrate surface. A method for forming a thin film and a thin film forming apparatus that implements the method.
これまでの薄膜形成装置が、原料物質の気化を反応室の
外部で行い反応室中へ導入する方法をとってい六ことと
異なシ、液体あるいは溶液とし、た原料物質が１反応死
中に導入されるため、原料が反応室の基板近傍に到達す
るまでに加熱されることもなく、従って、安定にかつ大
量の原料を反応室の基板近傍に制御性良く導入すること
が出来る。Conventional thin film forming apparatuses have adopted a method in which the raw material is vaporized outside the reaction chamber and then introduced into the reaction chamber. Therefore, the raw material is not heated before it reaches the vicinity of the substrate in the reaction chamber, and therefore, a large amount of raw material can be stably introduced into the vicinity of the substrate in the reaction chamber with good controllability.
以下図面にもとづき実施例に−ＤＩ／ｉて説明する。An embodiment will be described below based on the drawings.
実施例１
第１図ａ、ｂは本発明の薄膜形成装置実施例１の構成図
で、枚葉処理型のＣＶＤ装置の成膜室となる反応室の断
面および上面から見た模式図である。Example 1 Figures 1a and 1b are block diagrams of Example 1 of the thin film forming apparatus of the present invention, and are schematic diagrams of a reaction chamber serving as a film forming chamber of a single-wafer processing type CVD apparatus, viewed from the cross section and top. .
１１は基板ホルダである。本実施例では加熱機構があり
、上面に保持された基板１２を加熱し、通常の熱ＣＶＤ
を行うことができる。11 is a substrate holder. In this embodiment, there is a heating mechanism, which heats the substrate 12 held on the upper surface and performs normal thermal CVD.
It can be performed.
１３が、原料物質を蒸発させる原料液蒸発部である。液
溜の目的で、溝１４がつくられている。この部分を用い
て、原料物質を蒸発させることができるように、装置の
この部分の原料液蒸発部１３は。13 is a raw material liquid evaporating section that evaporates the raw material. A groove 14 is made for the purpose of collecting liquid. This part of the apparatus has a raw material liquid evaporation section 13 so that the raw material can be evaporated using this part.
装置の他の部分と独立した加熱系を形成している。It forms a heating system independent of the rest of the device.
原料物質は、液体あるいは溶液であｐ、原料液導入管１
５を通じて溝１４中に溜められる。原料液導入管１５へ
の原料液の導入は、原料液タンク１６からアルゴン（Ａ
ｒ）ガスを用いて加圧する。あるいは反応室と原料液タ
ンク１６との圧力差を利用すること洗より、原料液導入
管１５側に押し出されることによって行われる。１７は
、流量調節用のパルプであＺ）。これは、流量制御器婢
によって置き換えることができる。また、このとき反応
室の圧力は、原料液の蒸気圧より高い圧力に保たれてい
ることはいりまでもな−。The raw material is a liquid or a solution, and the raw material liquid introduction pipe 1
5 and is collected in the groove 14. The raw material liquid is introduced into the raw material liquid introduction pipe 15 using argon (A) from the raw material liquid tank 16.
r) Pressurize using gas. Alternatively, the washing may be carried out by using the pressure difference between the reaction chamber and the raw material liquid tank 16 to push the raw material liquid to the raw material liquid introduction pipe 15 side. 17 is pulp for flow rate adjustment Z). This can be replaced by a flow controller. Also, it goes without saying that at this time, the pressure in the reaction chamber is maintained at a higher pressure than the vapor pressure of the raw material liquid.
本装置の成膜工程には、次の二つがある。The film forming process of this device includes the following two steps.
第１の成膜工程は、原料液蒸発部１３を原料蒸発温度例
保ち、原料液導入管１５から連続的に原料液を導入し、
蒸発させる方法である。蒸発した原料物質は基板１２上
を拡散し、ＣＶＤ現象を起こす。In the first film forming step, the raw material liquid evaporator 13 is maintained at a raw material evaporation temperature, and the raw material liquid is continuously introduced from the raw material liquid introduction pipe 15.
This is a method of evaporation. The evaporated source material diffuses on the substrate 12 and causes a CVD phenomenon.
第２の成膜工程は、まず溝１４中に、一定量の原料液を
溜め込みバルブ１７を閉じる。その後、原料液蒸発部１
３を原料蒸発濃度まで昇温し、蒸発した原料物質を用い
て基板ｎ上で成膜させる。この工程では、２枚目の成膜
工程の前に原料液蒸発部１３を原料蒸発温度まで冷却し
、再び溝１４中への原料液の溜め込みを行う。In the second film forming step, first, a certain amount of raw material liquid is stored in the groove 14 and the valve 17 is closed. After that, the raw material liquid evaporator 1
3 is heated to the raw material evaporation concentration, and the evaporated raw material is used to form a film on the substrate n. In this step, before the second film forming step, the raw material liquid evaporator 13 is cooled to the raw material evaporation temperature, and the raw material liquid is stored in the groove 14 again.
本装置を用いて多層膜を形成する場合には、複数の原料
液タンクを設け、堆積する膜の順番に従い、原料を反応
室中に導入すればよい。When forming a multilayer film using this apparatus, a plurality of raw material liquid tanks may be provided and the raw materials may be introduced into the reaction chamber in accordance with the order of the films to be deposited.
実施例２
第２Ｖは本発明の薄膜形成装置実施例２の構成図で、実
施例１と同様の装置断面図である。実施例１の原料液蒸
発部１３の形が異なり原料液蒸発部２３のような断面構
造を有し、原料噴出２冴を形成している。本構造では、
原料液蒸発部おから蒸発した原料物質は、実施例１では
上向きに勢力的に広がるのに対して、本実五個では、原
料噴出２冴を形成したことによシ、基板ボルダ２１上に
載置した基板２２の表面に方向性を持ち吹き出すことＫ
なる。そのため、原料物質の反応室器壁への付着を少な
くし、原料の基板２２表面での消費効率を上げる効果が
ある。Embodiment 2 No. 2V is a configuration diagram of Embodiment 2 of the thin film forming apparatus of the present invention, and is a sectional view of the device similar to Embodiment 1. The shape of the raw material liquid evaporating section 13 of Example 1 is different, and has a cross-sectional structure similar to that of the raw material liquid evaporating section 23, forming two raw material jets. In this structure,
Raw material liquid evaporation section The raw material material evaporated from okara spreads forcefully upward in Example 1, whereas in the present example, the raw material material evaporated from the okara spreads upwardly, whereas in the present example, it spreads onto the substrate boulder 21 due to the formation of two raw material jets. Blow out directionally onto the surface of the substrate 22 placed on it.
Become. This has the effect of reducing the adhesion of the raw material to the reaction chamber wall and increasing the consumption efficiency of the raw material on the surface of the substrate 22.
実施例１および実施例２において原料液蒸発部は基板ホ
ルダを取９囲む円形であったが、蒸発させ九原料物質の
反応室中での流れを制御するためには、矩形であっても
よく、また複数個の部分に分かれていてもよいことはい
うまでもない。In Examples 1 and 2, the raw material liquid evaporator was circular surrounding the substrate holder, but may be rectangular in order to control the flow of the evaporated raw material in the reaction chamber. , it goes without saying that it may be divided into a plurality of parts.
実施例３
第３図は本発明の薄膜形成装置実施例３の構成図で、第
１図および第２図と同様の枚葉処理型のＣＶＤ装置の断
面図である。Embodiment 3 FIG. 3 is a block diagram of Embodiment 3 of the thin film forming apparatus of the present invention, and is a sectional view of a single-wafer processing type CVD apparatus similar to FIGS. 1 and 2.
３１は基板ホルダ、３２は基板である。本実施例は、反
応室中への原料液の導入をアンプルを用いて行うことを
特徴とする。３４は原料液蒸発皿であシ、関が原料液ア
ンプルでおる。あけ直線導入機のようなアンプル移動装
置であり％（資）はアンプルを支持するアンプル支持台
である。31 is a substrate holder, and 32 is a substrate. This example is characterized in that the raw material liquid is introduced into the reaction chamber using an ampoule. 34 is a raw material liquid evaporating dish, and 34 is a raw material liquid ampule. It is an ampoule moving device like a straight line introduction machine, and the % (equity) is an ampoule support stand that supports the ampoule.
本装置の原料液導入方法を説明する。原料液は原料液ア
ンプルお中に封入され、原料液アンプルあけ、アンプル
支持台３０に取り付けられる。減圧された反応室中でア
ンプル移動装置あけ、アンプル粉砕用の突起３９に向っ
て導入される。原料前アンプルあけ、アンプル移動装置
あと突起３９に挾まれ粉砕される。原料液は、原料液蒸
発ＨｒＬ３４に受は止められ溜シとなる。The method of introducing the raw material liquid into this device will be explained. The raw material liquid is sealed in a raw material liquid ampoule, the raw liquid ampoule is opened, and the ampoule is attached to the ampoule support stand 30. The ampoule transfer device is opened in the reaction chamber under reduced pressure, and the ampoule is introduced toward the protrusion 39 for crushing the ampoule. The ampoule is opened at the front of the raw material, and the ampoule is caught between the protrusions 39 at the end of the ampoule moving device and crushed. The raw material liquid is stopped by the raw material liquid evaporation HrL34 and becomes a reservoir.
成膜工程においては、原料液蒸発部詞を加熱し、反応室
中で原料物質を蒸発させることによシ、基板３２上に原
料を導入する。In the film forming process, the raw material is introduced onto the substrate 32 by heating the raw material liquid evaporation part and evaporating the raw material in the reaction chamber.
実施例４
第４図は本発明の薄膜形成装置実施例４の構成図で、４
１は基板ホルダ、４２は基板である。本実施例では、原
料液蒸発部４３が、基板４２に対面する位置に置かれて
いることに特徴がある。原料液蒸発部４３の上部に、原
料液溜り４４がある。Embodiment 4 FIG. 4 is a block diagram of Embodiment 4 of the thin film forming apparatus of the present invention.
1 is a substrate holder, and 42 is a substrate. This embodiment is characterized in that the raw material liquid evaporator 43 is placed at a position facing the substrate 42. A raw material liquid reservoir 44 is provided above the raw material liquid evaporator 43 .
・原料液は、原料液導入管４５を通シ、流量をバルブ４
７で制御され、原料液溜Ｄ４４に溜められる。原料液蒸
発部４３を加熱すると原料物質は蒸発し、原料噴出窓４
６から基板４２の表面に吹き付けられる。・The raw material liquid passes through the raw material liquid introduction pipe 45, and the flow rate is controlled by the valve 4.
7 and stored in the raw material liquid reservoir D44. When the raw material liquid evaporator 43 is heated, the raw material is evaporated and the raw material ejection window 4 is heated.
6 onto the surface of the substrate 42.
基板ホルダ４】が加熱される場合は、熱ＣＶＤＫよシ成
膜される。また、基板ホルダ４１と原料液蒸発部４３を
電極とすると、一般的な二極型電極のプラズマＣＶＤ装
置とすることができる。When the substrate holder 4 is heated, the film is formed using thermal CVDK. Furthermore, if the substrate holder 41 and the raw material liquid evaporator 43 are used as electrodes, a general bipolar electrode plasma CVD apparatus can be obtained.
と、原料は蒸発し原料蒸発窓間がら基板５２の表面に吹
き付けられる。Then, the raw material is evaporated and sprayed onto the surface of the substrate 52 between the raw material evaporation windows.
本実施例で示すように、原料液蒸発部間の構造を工夫す
ることによシ、基板５２の位置、方向、枚数と反応室内
に設けられる原料蒸発部の位置方向、原料噴出方向等に
特に、制限はない。As shown in this embodiment, by devising the structure between the raw material liquid evaporating parts, the position, direction, and number of substrates 52, the positional direction of the raw material evaporating part provided in the reaction chamber, the raw material ejection direction, etc. , no limit.
これまでの実施例において５反応室内におかれた原料液
蒸発部を、加熱および冷却ができ、温度制御可能な構造
とすることによって、ロードロックされた装置のスルー
プットを向上させることができる。The throughput of the load-locked apparatus can be improved by providing a structure in which the raw material liquid evaporating section, which was placed in the five reaction chambers in the previous embodiments, can be heated and cooled and whose temperature can be controlled.
実施例５
第５図は本発明の薄膜形成装置実施例５の構成図で１本
実施例は、実施例４と基板ホルダ５１と原料液蒸発部間
の上下の配置が逆となったものである。５２は基板であ
シ、原料物質はバルブ５７によシ流量を調節され、原料
液入管団を通り、原料液溜、！１ｌｉ５４に溜められる
。原料液蒸発部＆が加熱される〔発明の効果〕
以上述べたように本発明によシ、蒸気圧の低い液体およ
び固体の原料物質を、薄膜形成装置の反応呈中に、安定
にかつ定常的あるいは定量的に導入することが可能とな
った。Embodiment 5 FIG. 5 is a block diagram of Embodiment 5 of the thin film forming apparatus of the present invention. In this embodiment, the vertical arrangement between the substrate holder 51 and the raw material liquid evaporation section is reversed from that in Embodiment 4. be. 52 is a substrate, the flow rate of the raw material is adjusted by a valve 57, the raw material passes through the raw material liquid inlet tube, and the raw material liquid reservoir, ! It can be stored in 1li54. Raw material liquid evaporation section & is heated [Effect of the invention] As described above, according to the present invention, liquid and solid raw materials with low vapor pressure can be stably and constantly heated during the reaction of the thin film forming apparatus. It has now become possible to introduce the technology in a quantitative or quantitative manner.
このため、成膜速度の向上、膜厚制御性の向上等ができ
る。For this reason, it is possible to improve the film formation rate, film thickness controllability, and the like.
また、上記の装置的制限のために、制限されていた原料
物質の選択の自由もひろげることができるため、これま
でにない原料を用い念新しい薄膜形底法の開発の可能性
を与えることができる。Furthermore, the freedom of choice of raw materials, which had been limited due to the above-mentioned equipment limitations, can be expanded, giving the possibility of developing a completely new thin film bottom method using unprecedented raw materials. can.
謁・・・アンプル移動装置 （資）・・・アンプル支持台 あ・・・原料液アングル ３９・・・アンプル粉砕用突起 々、４６・・・原料噴出窓 あ・・・原料蒸発窓Audience: Ampoule moving device (Capital)...Ampoule support stand Ah...raw material liquid angle 39... Ampoule crushing protrusion 46... Raw material ejection window Ah... raw material evaporation window
第１図ａ＋ｂおよび第２図乃至第５図はそれぞれ本発明
の薄膜形成装置実施例１乃至実施例５の構成図である。
特許出願人 日本電信電話株式会社
代理人 弁理士 玉 蟲 久五部
（外１名）
１１ 、２１ 、３１ 、４］ 、 ５１・・・基板ホ
ルダ１２ 、２２ 、３２ 、４２ 、５２・・・基板
１３ 、２３ 、４３ 、５３・・・原料液蒸発部１４
、４４ 、５４・・・原料液溜シ詞・・・原料液蒸発
皿
１５ 、４５ 、５５・・・原料液導入管１６・・・原
料液タンク
１７ 、４７ 、５７・・・原料液流量制御バルブホ発
８月のＪＪＩ［影成顔！実だ伊Ｈの横桟図第
図
原料液
↓
本発明の薄膜形収装宜実施例４の槽成図第
図
本発明の；１膜形成荘置実施伊ｎの慎威図第 ２
図
３９突起
本発明の厚膜形成装置１！施例３のａ爪図第３図FIG. 1 a+b and FIGS. 2 to 5 are configuration diagrams of embodiments 1 to 5 of the thin film forming apparatus of the present invention, respectively. Patent applicant Nippon Telegraph and Telephone Corporation agent Patent attorney Tamamushi Kugobe (1 other person) 11, 21, 31, 4], 51... Board holder 12, 22, 32, 42, 52... Board 13, 23, 43, 53... Raw material liquid evaporation section 14
, 44 , 54 ... Raw material liquid reservoir ... Raw material liquid evaporation dish 15 , 45 , 55 ... Raw material liquid introduction pipe 16 ... Raw material liquid tank 17 , 47 , 57 ... Raw material liquid flow rate control August's JJI from Balbuho [Shadow face! Diagram of the horizontal bar of the present invention: Diagram of the raw material liquid
FIG. 39 Protrusion Thick film forming apparatus 1 of the present invention! Figure 3: A-claw diagram of Example 3
Claims (2)
前記反応室内に導入した薄膜形成原料を前記基板上に拡
散成膜させる薄膜形成法において、前記反応室内の前記
基板ホルダに載置した基板の近傍に薄膜形成原料蒸発部
を配置し、 前記薄膜形成原料蒸発部に薄膜形成原料を液体状態で導
入し、 前記薄膜形成原料蒸発部を加熱して前記薄膜形成原料を
蒸発気化させ、前記基板上に前記薄膜形成原料を拡散成
膜させる ことを特徴とする薄膜形成法。(1) Place the substrate placed on the substrate holder in the reaction chamber,
In the thin film forming method in which a thin film forming raw material introduced into the reaction chamber is diffused to form a film on the substrate, a thin film forming raw material evaporating section is arranged near the substrate placed on the substrate holder in the reaction chamber, and the thin film forming raw material is formed in the thin film forming method. Introducing a thin film forming raw material in a liquid state into a raw material evaporating section, heating the thin film forming raw material evaporating section to vaporize the thin film forming raw material, and diffusing and vaporizing the thin film forming raw material on the substrate. Thin film formation method.
前記反応室に設けた薄膜形成原料導入部から導入する薄
膜形成原料を前記基板に蒸発、成膜を形成する薄膜形成
装置において、 前記反応室は、 前記薄膜形成原料を液体状態で導入する薄膜形成原料導
入機構と、 前記基板の近傍に配置した、前記薄膜形成原料導入機構
から導入し、溜めた薄膜形成原料を蒸発させ、前記基板
上に拡散、成膜させる薄膜形成原料蒸発部とを備えてな
る ことを特徴とする薄膜形成装置。(2) Place a substrate holder with a substrate placed inside the reaction chamber,
A thin film forming apparatus that evaporates and forms a film on the substrate with a thin film forming raw material introduced from a thin film forming raw material introduction section provided in the reaction chamber, wherein the reaction chamber is configured to perform thin film formation where the thin film forming raw material is introduced in a liquid state. a raw material introduction mechanism; and a thin film forming raw material evaporation section disposed near the substrate, which introduces the thin film forming raw material from the thin film forming raw material introducing mechanism, evaporates the accumulated thin film forming raw material, and diffuses and forms a film on the substrate. A thin film forming apparatus characterized by:
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP30178788A JPH02145769A (en) | 1988-11-29 | 1988-11-29 | Method and device for forming thin film |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP30178788A JPH02145769A (en) | 1988-11-29 | 1988-11-29 | Method and device for forming thin film |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH02145769A true JPH02145769A (en) | 1990-06-05 |
Family
ID=17901169
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP30178788A Pending JPH02145769A (en) | 1988-11-29 | 1988-11-29 | Method and device for forming thin film |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH02145769A (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH04337075A (en) * | 1991-05-15 | 1992-11-25 | Nec Yamaguchi Ltd | Vapor phase growth device |
| JPWO2013077321A1 (en) * | 2011-11-21 | 2015-04-27 | 株式会社日立国際電気 | Semiconductor device manufacturing apparatus, semiconductor device manufacturing method, and recording medium |
| WO2019054470A1 (en) * | 2017-09-15 | 2019-03-21 | 株式会社堀場エステック | Liquid material supply device, material gas supply system, and liquid material supply method |
-
1988
- 1988-11-29 JP JP30178788A patent/JPH02145769A/en active Pending
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH04337075A (en) * | 1991-05-15 | 1992-11-25 | Nec Yamaguchi Ltd | Vapor phase growth device |
| JPWO2013077321A1 (en) * | 2011-11-21 | 2015-04-27 | 株式会社日立国際電気 | Semiconductor device manufacturing apparatus, semiconductor device manufacturing method, and recording medium |
| WO2019054470A1 (en) * | 2017-09-15 | 2019-03-21 | 株式会社堀場エステック | Liquid material supply device, material gas supply system, and liquid material supply method |
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