JPH11128719A - Apparatus for vaporizing solution and apparatus for producing membrane - Google Patents

Apparatus for vaporizing solution and apparatus for producing membrane

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Publication number
JPH11128719A
JPH11128719A JP29998097A JP29998097A JPH11128719A JP H11128719 A JPH11128719 A JP H11128719A JP 29998097 A JP29998097 A JP 29998097A JP 29998097 A JP29998097 A JP 29998097A JP H11128719 A JPH11128719 A JP H11128719A
Authority
JP
Japan
Prior art keywords
solution
gas
vaporizer
section
supply unit
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP29998097A
Other languages
Japanese (ja)
Other versions
JP3938990B2 (en
Inventor
Yasuo Matsumiya
康夫 松宮
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP29998097A priority Critical patent/JP3938990B2/en
Publication of JPH11128719A publication Critical patent/JPH11128719A/en
Application granted granted Critical
Publication of JP3938990B2 publication Critical patent/JP3938990B2/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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  • Feeding, Discharge, Calcimining, Fusing, And Gas-Generation Devices (AREA)
  • Chemical Vapour Deposition (AREA)

Abstract

PROBLEM TO BE SOLVED: To produce gas having the same composition as that of a fed solution by vaporizing the solution in a steady state, particularly the one which includes a solute hard to vaporize, thermally unstable, and in some coses is a solid. SOLUTION: The apparatus comprises a solution-feeding part 14 for feeding a solution, a solution-vaporizing part 16 for vaporizing the solution fed by the solution-feeding part 14, and a gas-removing part 18 for removing vaporized gas. The solution-feeding part 14, the solution-vaporizing part 16, and the gas- removing part 18 comprise being along a channel in which liquid or gas continuously flows, have a temperature gradient by which temperature becomes higher from the solution-feeding part 14 to the gas-removing part 18.

Description

【発明の詳細な説明】DETAILED DESCRIPTION OF THE INVENTION

【0001】[0001]

【発明の属する技術分野】本発明は溶媒と溶質とを含む
溶液を気化させ、供給された溶液と同じ組成の気体とし
て取り出すようにした溶液気化装置、及びそのような溶
液気化装置を含む成膜装置に関する。
BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a solution vaporizer for vaporizing a solution containing a solvent and a solute and taking out the solution as a gas having the same composition as the supplied solution, and a film formation including such a solution vaporizer. Related to the device.

【0002】[0002]

【従来の技術】従来の溶液気化装置の一例は、容器に入
れた溶液を加熱することにより溶液を蒸発させるもので
ある。また、他の例は、加熱した液体を容器から霧状に
吹き出させて表面積を増やすことで蒸発させるものであ
る。
2. Description of the Related Art An example of a conventional solution vaporizer is one in which a solution placed in a container is heated to evaporate the solution. Another example is to evaporate a heated liquid by blowing it out of a container in a mist state to increase the surface area.

【0003】[0003]

【発明が解決しようとする課題】溶液を一定温度で加熱
することにより気体に蒸発させる場合、溶媒と溶質とは
蒸発温度が異なるために、供給された溶液の組成と蒸発
した気体の組成とは一般に異なる平衡関係になる。この
ため、溶液を一定温度で気化させ続けると、溶液中の蒸
発しにくい成分の濃度が上昇し続ける。従って、上記前
者の方法では蒸発しにくい成分が容器に蓄積されてやが
て設定された一定温度では溶液を気化できなくなる。こ
のように、従来の一定温度に保たれた気化器では、溶媒
と溶質を完全に蒸発させ、定常状態を作ることは困難で
ある。
When a solution is heated to a constant temperature to evaporate it into a gas, the solvent and the solute have different evaporation temperatures, so that the composition of the supplied solution and the composition of the evaporated gas are different. In general, there will be different equilibrium relationships. For this reason, if the solution is continuously vaporized at a constant temperature, the concentration of the hardly evaporable component in the solution will continue to increase. Therefore, in the former method, components that are difficult to evaporate accumulate in the container, and the solution cannot be vaporized at a predetermined temperature. As described above, it is difficult to completely evaporate the solvent and the solute in the conventional vaporizer kept at a constant temperature, and to make a steady state.

【0004】また供給された溶液の濃度と蒸発して取り
出された気体の濃度は異なったものとなる。そして、溶
質が固体の場合には、例えば管等をつまらせ、閉塞する
可能性が生じる。一方、上記後者の場合には、霧となっ
た微細な溶液の粒子の温度は気化熱により低下し、やは
り蒸発しにくい成分は気化されずに残り、供給された溶
液全てを気化することは難しい。いずれの場合にも、溶
液をかなり高い温度まで加熱すれば溶液の全成分を気化
することは可能であるが、熱的に不安定な物質を含む溶
液の場合には溶液を過度に高い温度まで加熱することが
できず、そのために従来の溶液気化装置では上記した問
題点を解決できなかった。
[0004] The concentration of the supplied solution is different from the concentration of the gas taken out by evaporation. When the solute is a solid, for example, the pipe or the like may be pinched and closed. On the other hand, in the latter case, the temperature of the particles of the fine solution that has turned into a mist decreases due to the heat of vaporization, and the components that are also difficult to evaporate remain without being vaporized, and it is difficult to vaporize the entire supplied solution. . In each case, it is possible to vaporize all components of the solution by heating the solution to a very high temperature, but in the case of solutions containing thermally unstable substances, the solution may be heated to an excessively high temperature. Heating could not be performed, and the above-mentioned problems could not be solved by the conventional solution vaporizer.

【0005】従って、従来の溶液気化装置を使用した成
膜装置では、さらに均一な成膜を行うことができるよう
にすることが求められていた。本発明の目的は、溶液、
特に蒸発しにくく、また熱的に不安定で、場合によって
は固体である溶質を含む溶液を定常的に気化させ、供給
された溶液と同じ組成の気体をつくり出す溶液気化装
置、及び成膜装置を提供することである。
[0005] Therefore, in a film forming apparatus using a conventional solution vaporizer, it has been demanded to be able to form a more uniform film. The object of the present invention is a solution,
In particular, a solution vaporizer and a film forming apparatus that constantly vaporize a solution containing a solute that is hard to evaporate and are thermally unstable and, in some cases, a solid, to produce a gas having the same composition as the supplied solution, are provided. To provide.

【0006】[0006]

【課題を解決するための手段】本発明による溶液気化装
置は、溶液を供給する溶液供給部と、該溶液供給部で供
給された溶液が蒸発する溶液蒸発部と、蒸発した気体が
取り出される気体取り出し部とを有し、該溶液供給部と
該溶液蒸発部と該気体取り出し部とは液体又は気体が連
続的に流れる流路にあり、該溶液供給部から該気体取り
出し部へ向かって温度が高くなるような温度勾配をもつ
ことを特徴とするものである。
A solution vaporizer according to the present invention comprises: a solution supply unit for supplying a solution; a solution evaporation unit for evaporating the solution supplied by the solution supply unit; and a gas for removing the evaporated gas. A solution supply unit, the solution evaporation unit, and the gas removal unit are located in a flow path in which a liquid or a gas continuously flows, and the temperature is increased from the solution supply unit toward the gas removal unit. It is characterized by having a temperature gradient that increases.

【0007】この構成において、溶液供給部から気体取
り出し部へ向かって温度が高くなるような温度勾配が形
成されているので、溶液は溶液蒸発部の手前の位置であ
る温度で蒸発されはじめ、溶液中の蒸発しやすい成分は
ただちに蒸発しはじめるが、濃溶液中の蒸発されにくい
成分はすぐには蒸発されないので、蒸発されにくい成分
の濃度が高くなる。溶液は溶液供給部から気体取り出し
部へ向かって連続的に供給されているので、蒸発されに
くい成分の濃度が高くなった溶液は、前記の手前の位置
から溶液蒸発部へ進む。溶液蒸発部の温度は最初に蒸発
がはじまった位置よりにおける温度よりも高いので、蒸
発されにくい成分のを多く含み、濃度が高くなった溶液
でも蒸発することができるようになる。こうして、供給
された全ての溶液が蒸発され、蒸発により得られた気体
の組成は、供給された溶液の組成と同じになる。
In this configuration, since a temperature gradient is formed such that the temperature increases from the solution supply section toward the gas take-out section, the solution starts to evaporate at a temperature that is a position just before the solution evaporation section, and The readily evaporable components in the solution begin to evaporate immediately, but the hardly evaporable components in the concentrated solution are not immediately evaporated, so that the concentration of the hardly evaporable components increases. Since the solution is continuously supplied from the solution supply section toward the gas take-out section, the solution in which the concentration of the component that is difficult to evaporate becomes high advances from the position before the above to the solution evaporation section. Since the temperature of the solution evaporating section is higher than the temperature at the position where the evaporation starts first, it is possible to evaporate even a solution having a high concentration containing a large amount of components that are difficult to evaporate. In this way, all the supplied solutions are evaporated, and the composition of the gas obtained by the evaporation becomes the same as the composition of the supplied solution.

【0008】好ましくは、該溶液気化装置は管により構
成され、該管の断面積は、液体が該溶液供給部から該溶
液蒸発部へ流れていく線流速が該溶液供給部と該溶液蒸
発部との間で生じる溶液の濃度差による溶質の拡散速度
に比べて十分に早くなるようなものである。また、該気
体取り出し部が加熱され、該熱が該溶液供給部から該気
体取り出し部へ向かって放熱されることにより前記温度
勾配が形成される。
Preferably, the solution vaporizer is constituted by a tube, and a cross-sectional area of the tube is such that a linear flow rate at which liquid flows from the solution supply section to the solution evaporation section is equal to the solution supply section and the solution evaporation section. This is sufficiently faster than the diffusion rate of the solute due to the difference in the concentration of the solution generated between. In addition, the gas outlet is heated, and the heat is radiated from the solution supply unit toward the gas outlet to form the temperature gradient.

【0009】また、該気体取り出し部にヒータが取り付
けられる。また、該気体取り出し部に電磁波を照射する
ことにより該気体取り出し部を加熱する。また、該溶液
気化装置は共通の溶液供給部から複数の溶液蒸発部及び
気体取り出し部に分岐された管からなるもとすることも
できる。
A heater is attached to the gas outlet. Further, the gas extracting section is heated by irradiating the gas extracting section with an electromagnetic wave. Further, the solution vaporizer may be composed of a pipe branched from a common solution supply section to a plurality of solution evaporation sections and a gas extraction section.

【0010】また、本発明は上記したような溶液気化装
置を含む成膜装置を提供する。この成膜装置では、均一
な成分の優れたハツ膜を形成することができる。
Further, the present invention provides a film forming apparatus including the above-described solution vaporizer. In this film forming apparatus, an excellent heart film having a uniform component can be formed.

【0011】[0011]

【発明の実施の形態】図1は本発明の原理説明図であ
る。溶液供給装置10は連続的な流路を提供する管12
として構成され、図において管12の右端部側から溶液
Sを供給し、左端部側から気体Gとして取り出す。すな
わち、溶液供給装置10は、溶液を供給する溶液供給部
14と、溶液供給部14で供給された溶液が蒸発する溶
液蒸発部16と、蒸発した気体が取り出される気体取り
出し部18とを有する。
FIG. 1 is a diagram illustrating the principle of the present invention. The solution supply device 10 includes a tube 12 that provides a continuous flow path.
In the drawing, the solution S is supplied from the right end side of the tube 12 and is taken out as gas G from the left end side. That is, the solution supply device 10 includes a solution supply unit 14 that supplies the solution, a solution evaporation unit 16 in which the solution supplied by the solution supply unit 14 evaporates, and a gas extraction unit 18 that extracts the evaporated gas.

【0012】ヒータ20が気体取り出し部18に取り付
けられている。ヒータ20によって気体取り出し部18
によって与えられた熱は、管12を通る熱伝導によって
溶液供給部14へ伝えられる。熱は管12において熱伝
導するとともに管12から放熱し、よって図2に示すよ
うな温度勾配ができる。図2においては、Xが気体取り
出し部18を示し、Yが溶液蒸発部16を示し、Zが溶
液供給部14を示す。溶液供給部(Z)14の温度はT
1 であり、溶液蒸発部(Y)16の温度はT2 であり、
気体取り出し部(X)18の温度はT3である。ここ
で、T3 >T2 >T1 の関係がある。T0 は溶液の気化
が始まる温度であり、T2 >T0 >T1 である。
A heater 20 is attached to the gas outlet 18. The gas extraction section 18 is heated by the heater 20.
Is transferred to the solution supply 14 by heat conduction through the tube 12. The heat is conducted in the tube 12 and is radiated from the tube 12, so that a temperature gradient as shown in FIG. 2 is created. In FIG. 2, X indicates the gas extraction unit 18, Y indicates the solution evaporation unit 16, and Z indicates the solution supply unit 14. The temperature of the solution supply unit (Z) 14 is T
1 , the temperature of the solution evaporator (Y) 16 is T 2 ,
Temperature of the gas extraction unit (X) 18 is T 3. Here, there is a relationship of T 3 > T 2 > T 1 . T 0 is the temperature at which vaporization of the solution starts, and T 2 > T 0 > T 1 .

【0013】図3は、溶液供給部(Z)14、溶液蒸発
部(Y)16、及び気体取り出し部(X)18を含む管
12内の溶液の濃度分布を示す。溶液供給部(Z)14
の溶液の濃度はC1 であり、溶液蒸発部(Y)16の溶
液の濃度はC3 である。溶液気化装置10を構成する管
12の断面積は、液体が溶液供給部14から溶液蒸発部
16へ流れていく線流速が溶液供給部14と溶液蒸発部
16との間で生じる溶液の濃度差による溶質の拡散速度
に比べて十分に早くなるようなものである。また、溶液
の線流速は下記の蒸発が生じるように十分に遅くなくて
はならない。
FIG. 3 shows the concentration distribution of the solution in the tube 12 including the solution supply section (Z) 14, the solution evaporation section (Y) 16, and the gas extraction section (X) 18. Solution supply unit (Z) 14
The concentration of the solution is C 1, the concentration of the solution of the solution evaporation portion (Y) 16 is C 3. The cross-sectional area of the tube 12 constituting the solution vaporizer 10 is determined by the linear flow rate at which the liquid flows from the solution supply unit 14 to the solution evaporation unit 16 and the concentration difference of the solution generated between the solution supply unit 14 and the solution evaporation unit 16. Is sufficiently faster than the diffusion rate of the solute. Also, the linear flow rate of the solution must be slow enough so that the following evaporation occurs.

【0014】図4は、2成分系の溶液の気液平衡の一般
的な関係を示す。図1の管12の左端部側に位置する気
体取り出し部(X)18の圧力を一定とし、高沸点物質
を濃度C1 で含む溶液が溶液供給部(Z)14に供給さ
れたとする。この溶液は溶液の温度がT0 に達したとき
に気化が始まる。溶液が動かずにこのままの条件で加熱
を続けると、得られる気体は高沸点物質の濃度がC2
ものになる。つまり、得られる気体の濃度C2 は供給さ
れた溶液の濃度C1 とは異なっており、高沸点物質の一
部は気化されない。
FIG. 4 shows the general relationship of the vapor-liquid equilibrium of a binary solution. And a gas take-out portion located on the left end side of the tube 12 in FIG. 1 the pressure (X) 18 is constant, the solution containing the high-boiling substances in a concentration C 1 is supplied to the solution supply unit (Z) 14. This solution begins to vaporize when the temperature of the solution reaches T 0 . If heating is continued under these conditions without moving the solution, the resulting gas will have a high-boiling substance concentration of C 2 . That is, the concentration C 2 of the resulting gas is different from the concentration C 1 of the supplied solution, part of the high boiling material is not vaporized.

【0015】本発明では、上記したような温度勾配があ
り、且つ溶液が流れているので、一部蒸発した残りの溶
液は濃度がC1 よりも高くなって、図1で左方に向かっ
て移動する。その結果、濃度が高くなった溶液の沸点は
上昇し、温度の高い部位でさらに蒸発することができ
る。その結果、未気化の溶液の濃度はさらに高くなり、
液面はさらに図1で左に移動する。最終的には、溶液の
濃度はC3 になり、温度はT2 になる。図3はこのよう
な管内の溶液の濃度分布を示す図である。このときに得
られた気体の濃度はC1 となり、これは供給される溶液
の濃度C1 と同じになる。
In the present invention, since there is a temperature gradient as described above and the solution is flowing, the concentration of the remaining solution partially evaporated becomes higher than C 1 , and as shown in FIG. Moving. As a result, the boiling point of the solution having a higher concentration increases, and the solution can be further evaporated at a high temperature portion. As a result, the concentration of the unvaporized solution becomes even higher,
The liquid level further moves to the left in FIG. Eventually, the concentration of the solution became C 3, the temperature becomes T 2. FIG. 3 is a diagram showing the concentration distribution of the solution in such a tube. The concentration of the gas obtained in this case is C 1 becomes, which is the same as the concentration C 1 of the solution fed.

【0016】図5は、溶液供給装置10の変形例を示す
図である。この溶液供給装置10は分岐管22で構成さ
れている。分岐管22は共通の溶液供給部14から複数
の溶液蒸発部16及び気体取り出し部18に分岐された
管である。ヒータ20が各気体取り出し部18に取り付
けられている。溶液供給部14、溶液蒸発部16及び気
体取り出し部18の作用は上記実施例のものと同様であ
る。このように、分岐管を用いると、より多くの溶液を
同時に気化することができる。なお、分岐管22の代わ
りに複数の穴のあいた構造を用いることもできる。
FIG. 5 is a view showing a modification of the solution supply device 10. As shown in FIG. The solution supply device 10 includes a branch pipe 22. The branch pipe 22 is a pipe branched from a common solution supply unit 14 to a plurality of solution evaporation units 16 and a gas extraction unit 18. A heater 20 is attached to each gas outlet 18. The operations of the solution supply unit 14, the solution evaporation unit 16 and the gas take-out unit 18 are the same as those of the above embodiment. As described above, when the branch pipe is used, more solution can be vaporized at the same time. Note that a structure having a plurality of holes may be used instead of the branch pipe 22.

【0017】図6は、溶液気化装置10を含むCVD装
置の実施例を示す図である。CVD装置30は、反応管
32と、例えば半導体基板34を支持するホルダ36
と、反応管32の内部のチャンバを加熱するための電気
炉38と、反応管32を真空雰囲気にするためのポンプ
40とを備えている。溶液気化装置10は反応管32に
取り付けられ、溶液気化装置10から取り出された気体
を基板34に蒸着して、基板34に薄膜を形成するもの
である。溶液気化装置10には、溶液容器42からポン
プ44によって溶液が供給されるようになっている。
FIG. 6 is a diagram showing an embodiment of a CVD apparatus including the solution vaporizer 10. The CVD apparatus 30 includes a reaction tube 32 and a holder 36 that supports, for example, a semiconductor substrate 34.
And an electric furnace 38 for heating a chamber inside the reaction tube 32 and a pump 40 for bringing the reaction tube 32 into a vacuum atmosphere. The solution vaporizer 10 is attached to the reaction tube 32 and vapor-deposits the gas extracted from the solution vaporizer 10 on the substrate 34 to form a thin film on the substrate 34. The solution vaporizer 10 is supplied with a solution from a solution container 42 by a pump 44.

【0018】図7は溶液気化装置10を反応管32に取
り付けた例を示す図である。反応管32の開口端部には
ステンレスのキャップ46が取り付けられ、溶液気化装
置10(管12)はこのキャップ46に気密に取り付け
られる。ヒータ20は反応管32内に位置する管12の
先端に取り付けられている。この熱源により、管12に
温度勾配を作る。管12の内径は0.1mm、外径は6
mmとする。
FIG. 7 is a view showing an example in which the solution vaporizer 10 is attached to a reaction tube 32. A stainless steel cap 46 is attached to the open end of the reaction tube 32, and the solution vaporizer 10 (tube 12) is air-tightly attached to the cap 46. The heater 20 is attached to the tip of the tube 12 located inside the reaction tube 32. This heat source creates a temperature gradient in the tube 12. The inner diameter of the tube 12 is 0.1 mm and the outer diameter is 6
mm.

【0019】基板34にCuの薄膜を作る場合、溶液と
して、VEMS(ビニルトリメチルシラン)を溶媒と
し、溶質に95から50%程度のCuHFAVTMS
(ヘキサフルオロアセトネート、ビニルトリメチルシラ
ン銅)を原料として使用する。この場合、反応管32内
の圧力を300mmTorr、基板34の温度を170
℃、ヒータ20の温度を70℃とする。この条件では、
溶液の流量を0.1g/minで定常的に気化させるこ
とができる。6インチ基板34の場合には、300nm
・分程度の成膜速度で銅の薄膜を形成することができ
る。
When a Cu thin film is formed on the substrate 34, VEMS (vinyltrimethylsilane) is used as a solvent, and about 95 to 50% of CuHFAVTMS is added to the solute.
(Hexafluoroacetonate, vinyltrimethylsilane copper) is used as a raw material. In this case, the pressure in the reaction tube 32 is set to 300 mmTorr, and the temperature of the substrate 34 is set to 170 mmTorr.
C. and the temperature of the heater 20 is 70 C. In this condition,
The solution can be constantly vaporized at a flow rate of 0.1 g / min. 300 nm for a 6-inch substrate 34
A copper thin film can be formed at a deposition rate of about a minute.

【0020】図6のような溶液気化装置10を用いる
と、より多くの溶液を同時に気化することができ、反応
管32内に大量の基板34をおいても、同等の成長速度
で成膜が可能となる。同様の装置で、酸化物超伝導体や
高誘電体、強誘電体等、固体の錯体化合物を利用するC
VD装置の溶液気化装置としても利用できる。例えば、
1 Ba2 Cu3 Oの超伝導体を作製する場合、原料に
THF(テトラハイドロフラン)溶媒に溶かした固体の
金属錯体であるCuDPM2 、BaDPM2 、YDPM
3 (ここでDPMはジピバロイルメタン)を用い、溶液
気化装置のヒータの温度を300℃に設定すると、CV
Dに必要な金属錯体を供給した濃度と同じ組成の気体と
して反応管内に導入できる。金属錯体は通常は固体であ
り、昇華温度付近で熱的に不安定となるため、この種の
CVDでは組成制御が困難であったが、本溶液気化装置
を利用すると、原料を液体で扱えるため、正確な流量制
御が可能であり、またこの種の溶液を一定温度で保たれ
た気化器に導入したときに必ず起きる溶液気化装置の閉
塞を回避することができる。
When the solution vaporizer 10 as shown in FIG. 6 is used, more solution can be vaporized at the same time, and even if a large amount of the substrate 34 is placed in the reaction tube 32, a film can be formed at the same growth rate. It becomes possible. In a similar device, C using solid complex compounds such as oxide superconductors, high dielectrics, and ferroelectrics
It can also be used as a solution vaporizer for a VD device. For example,
In the case of producing a Y 1 Ba 2 Cu 3 O superconductor, CuDPM 2 , BaDPM 2 , and YDPM, which are solid metal complexes dissolved in a THF (tetrahydrofuran) solvent as a raw material, are used.
3 (where DPM is dipivaloylmethane) and the temperature of the heater of the solution vaporizer is set to 300 ° C, the CV
The metal complex required for D can be introduced into the reaction tube as a gas having the same composition as the supplied concentration. The metal complex is usually a solid, and becomes thermally unstable near the sublimation temperature, so it is difficult to control the composition by this type of CVD. However, when this solution vaporizer is used, the raw material can be handled as a liquid. It is possible to control the flow rate accurately, and it is possible to avoid blockage of the solution vaporizer, which always occurs when such a solution is introduced into a vaporizer maintained at a constant temperature.

【0021】上記した例においては、温度勾配を形成す
るための熱源として電気ヒータ20が気体取り出し部1
8に取り付けられている。しかし、電気ヒータ20に変
わってあらゆるタイプのヒータを使用することができ
る。また、熱源は必ずしも気体取り出し部18に取り付
けられたものでなくてもよい。例えば、気体取り出し部
18に電磁波(例えば赤外線)を照射することにより気
体取り出し部18を加熱するようにしてもよい。あるい
は、液体が吸収する波長の電磁波を気体取り出し部18
側から液体表面に照射することによって所望の温度勾配
をつくることもできる。
In the above-described example, the electric heater 20 is used as the heat source for forming the temperature gradient by using the gas extraction unit 1.
8 attached. However, any type of heater can be used instead of the electric heater 20. Further, the heat source does not necessarily have to be attached to the gas extracting unit 18. For example, the gas extracting unit 18 may be heated by irradiating the gas extracting unit 18 with electromagnetic waves (for example, infrared rays). Alternatively, an electromagnetic wave having a wavelength that is absorbed by the liquid is supplied to the gas extracting section 18.
A desired temperature gradient can also be created by irradiating the liquid surface from the side.

【0022】[0022]

【発明の効果】以上説明したように、本発明によれば、
2成分又は2成分以上を含む溶液からこの溶液と同じ組
成の気体を定常的に取り出すことが可能であり、従来複
雑であった構造を簡略化できるとともに、装置の信頼性
を向上することができる。また、本発明による成膜装置
では、均一な成分の優れたハツ膜を形成することができ
る。
As described above, according to the present invention,
A gas having the same composition as this solution can be constantly extracted from a solution containing two components or two or more components, so that a conventionally complicated structure can be simplified and the reliability of the device can be improved. . Further, in the film forming apparatus according to the present invention, a heart film having an excellent uniform component can be formed.

【図面の簡単な説明】[Brief description of the drawings]

【図1】本発明の原理説明図である。FIG. 1 is a diagram illustrating the principle of the present invention.

【図2】図1の溶液気化装置における位置と温度との関
係を示す図である。
FIG. 2 is a diagram showing a relationship between a position and a temperature in the solution vaporizer of FIG.

【図3】図1の溶液気化装置における位置と濃度との関
係を示す図である。
FIG. 3 is a diagram showing a relationship between a position and a concentration in the solution vaporizer of FIG.

【図4】溶液─気体の平衡関係を示す図である。FIG. 4 is a diagram showing an equilibrium relationship between a solution and a gas.

【図5】分岐管で構成された実施例を示す図である。FIG. 5 is a view showing an embodiment constituted by a branch pipe.

【図6】本発明の溶液気化装置を含むCVD装置の実施
例を示す図である。
FIG. 6 is a view showing an embodiment of a CVD apparatus including a solution vaporizer of the present invention.

【図7】図6の部分詳細図である。FIG. 7 is a partial detailed view of FIG. 6;

【符号の説明】[Explanation of symbols]

10…溶液供給装置 12…管 14…溶液供給部 16…溶液蒸発部 18…気体取り出し部 20…ヒータ 22…分岐管 30…CVD装置 DESCRIPTION OF SYMBOLS 10 ... Solution supply apparatus 12 ... Tube 14 ... Solution supply part 16 ... Solution evaporation part 18 ... Gas extraction part 20 ... Heater 22 ... Branch pipe 30 ... CVD apparatus

Claims (7)

【特許請求の範囲】[Claims] 【請求項1】 溶液を供給する溶液供給部と、該溶液供
給部で供給された溶液が蒸発する溶液蒸発部と、蒸発し
た気体が取り出される気体取り出し部とを有し、該溶液
供給部と該溶液蒸発部と該気体取り出し部とは液体又は
気体が連続的に流れる流路にあり、該溶液供給部から該
気体取り出し部へ向かって温度が高くなるような温度勾
配をもつことを特徴とする溶液気化装置。
1. A solution supply unit for supplying a solution, a solution evaporation unit for evaporating the solution supplied by the solution supply unit, and a gas extraction unit for extracting the evaporated gas. The solution evaporating section and the gas take-out section are in a flow path in which a liquid or a gas flows continuously, and have a temperature gradient such that the temperature increases from the solution supply section toward the gas take-out section. Solution vaporizer.
【請求項2】 該溶液気化装置は管により構成され、該
管の断面積は、液体が該溶液供給部から該溶液蒸発部へ
流れていく線流速が該溶液供給部と該溶液蒸発部との間
で生じる溶液の濃度差による溶質の拡散速度に比べて十
分に早くなるようなものであることを特徴とする請求項
1に記載の溶液気化装置。
2. The solution vaporization device is constituted by a tube, and a cross-sectional area of the tube is such that a linear flow rate at which liquid flows from the solution supply unit to the solution evaporation unit is equal to the solution supply unit and the solution evaporation unit. 2. The solution vaporizer according to claim 1, wherein the solution vaporization speed is sufficiently faster than the diffusion speed of the solute due to the concentration difference of the solution occurring between the two.
【請求項3】 該気体取り出し部が加熱され、該熱が該
溶液供給部から該気体取り出し部へ向かって放熱される
ことにより前記温度勾配が形成されることを特徴とする
請求項2に記載の溶液気化装置。
3. The temperature gradient according to claim 2, wherein the gas outlet is heated, and the heat is radiated from the solution supply unit toward the gas outlet to form the temperature gradient. Solution vaporizer.
【請求項4】 該気体取り出し部にヒータが取り付けら
れることを特徴とする請求項3に記載の溶液気化装置。
4. The solution vaporizer according to claim 3, wherein a heater is attached to the gas outlet.
【請求項5】 該気体取り出し部に電磁波を照射するこ
とにより該気体取り出し部を加熱することを特徴とする
請求項3に記載の溶液気化装置。
5. The solution vaporizer according to claim 3, wherein the gas outlet is heated by irradiating the gas outlet with electromagnetic waves.
【請求項6】 共通の溶液供給部から複数の溶液蒸発部
及び気体取り出し部に分岐された管からなることを特徴
とする請求項1に記載の溶液気化装置。
6. The solution vaporizer according to claim 1, comprising a pipe branched from a common solution supply section to a plurality of solution evaporation sections and a gas extraction section.
【請求項7】 請求項1から6のいずれかに記載の溶液
気化装置を含む成膜装置。
7. A film forming apparatus comprising the solution vaporizer according to claim 1.
JP29998097A 1997-10-31 1997-10-31 Solution vaporizer and film forming apparatus Expired - Fee Related JP3938990B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
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Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP29998097A JP3938990B2 (en) 1997-10-31 1997-10-31 Solution vaporizer and film forming apparatus

Publications (2)

Publication Number Publication Date
JPH11128719A true JPH11128719A (en) 1999-05-18
JP3938990B2 JP3938990B2 (en) 2007-06-27

Family

ID=17879308

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Application Number Title Priority Date Filing Date
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Country Status (1)

Country Link
JP (1) JP3938990B2 (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2008086851A (en) * 2006-09-29 2008-04-17 Casio Comput Co Ltd Vaporization device, and method for controlling its drive
WO2012081738A1 (en) * 2010-12-13 2012-06-21 Posco Continuous coating apparatus

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2008086851A (en) * 2006-09-29 2008-04-17 Casio Comput Co Ltd Vaporization device, and method for controlling its drive
WO2012081738A1 (en) * 2010-12-13 2012-06-21 Posco Continuous coating apparatus
US9267203B2 (en) 2010-12-13 2016-02-23 Posco Continuous coating apparatus

Also Published As

Publication number Publication date
JP3938990B2 (en) 2007-06-27

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