JPH02143980A - Storage matrix - Google Patents

Abstract

PURPOSE:To obtain a nonvolatile storage device having high density and large capacity by constituting the title storage matrix of a diode of a storage cell consisting of a storage magnetic material, a read-out conductive line group, a write conductive line group and a supporting substrate. CONSTITUTION:The storage matrix is constituted for a storage cell, a read-out conductive line group and a write conductive line group, and the storage cell consists of one piece of diode 2 and one piece of storage magnetic material. The diode 2 and a two-terminal magneto-resistance element 1 for constituting storage magnetic materials 1, 3 and 4 constitute the storage cell connected in series, and the write conductive line group consists of two kinds of conductive line groups consisting of an X conductive line group 5 and a Y conductive line group 6. Also, it is constituted so that the X conductive line 5 and the Y conductive line 6 pass through the inside of a closed magnetic circuit of the storage magnetic material in a point where the X and the Y conductive lines intersect with each other, and magnetic write is executed by a current coincidence type. The read-out conductive line group consists of a word line group 7 and a digit line group 8. In such a way, a nonvolatile storage device of a large scale and high density is obtained.

Description

DETAILED DESCRIPTION OF THE INVENTION The present invention relates to a storage matrix for non-volatile digital storage devices.

The memory matrix of the present invention is of a type in which memory is magnetically written in a semi-hard magnetic material, and the direction of the old magnetization is read out by the magnetoresistive effect.

BACKGROUND TECHNOLOGY Non-volatile memory is required for applications where it is inconvenient to lose memory when the power is turned off.

Conventional non-volatile semiconductor memories cannot be said to have very fast write speeds, and repeated write and erase operations can cause malfunctions in the memory elements.

As storage elements using magnetic storage methods, there have been proposed ones based on electromagnetic induction, those using Hall voltage, and those based on readout methods based on magnetoresistive effect.

Among storage elements using magnetic methods, those based on electromagnetic induction are miniaturized to increase storage density, and the read voltage also decreases.

For this reason, there is a limit to the miniaturization of magnetic storage systems based on electromagnetic induction.

A device using a magnetoresistive element as a memory element is disclosed in the published patent No. 63-61493. Published patent 1986-136
3813. There are published patents such as 1989-191892 and published patent 44783-1983.

However, the storage device disclosed in the above-mentioned patent is incomplete in increasing the storage density.

OBJECTS OF THE INVENTION An object of the present invention is to provide a high-density, large-capacity nonvolatile memory device by minimizing the number of constituent elements in a memory cell that utilizes the magnetoresistive effect.

Structure of the Present Invention The memory matrix of the present invention is composed of a memory cell, a read conductive line group 5 a write conductive line group, and a support substrate.

A memory cell is composed of a diode and a memory magnetic material.

Memory magnetic material.

The storage magnetic material is a closed magnetic circuit described below.

The first configuration of the storage magnetic material is a closed magnetic circuit including a semi-hard magnetic material in its magnetic circuit and a two-terminal magnetoresistive element made of a ferromagnetic magnetoresistive material in its magnetic circuit.

The second configuration of the storage magnetic material is a closed magnetic circuit in which a semi-hard magnetic material is included in the magnetic circuit, and a two-terminal magnetic resistance element is placed in the gap portion of one magnetic path.

In this explanatory text, in order to clarify the explanation, this closed magnetic circuit will be referred to as a storage magnetic body in the following explanatory text.

Memory writing is performed by a method in which either of the two directions of the closed magnetic circuit of the storage magnetic material is magnetized in one direction.

Memory reading is performed by a magnetoresistive element forming part of this closed magnetic circuit. Magnetoresistive element is 180
It is possible to distinguish between external magnetic fields with different degree directions.

The magnetoresistive element that constitutes a part of the storage magnetic material is well known.

The following are examples of storage magnetic materials, which are conveniently formed on a support substrate.

The supporting substrate may be a semiconductor substrate constituting a diode group described later or a semiconductor thin film.

(1) A storage magnetic material in which a two-terminal magnetoresistive element made of a ferromagnetic magnetoresistive film and a semi-hard magnetic film form a closed magnetic circuit, and the two-terminal magnetoresistive element receives an external magnetic field with a difference of 180 degrees. Memory magnetic material made into an identifiable element.

(2) A storage magnetic material having uniaxial magnetic anisotropy in the semi-hard magnetic material described in item 1.

(3) A memory magnetic material in which a two-terminal magnetoresistive element made of a ferromagnetic magnetoresistive film and a soft magnetic film form a closed magnetic circuit, and the two-terminal magnetoresistive element discriminates between external magnetic fields with a difference of 180 degrees. 1. A storage magnetic material, which is an element capable of producing a magnetic memory, and wherein the ferromagnetic magnetoresistive film is a semi-hard magnetic material.

(4) A storage magnetic material in which a two-terminal magnetoresistive element made of a thin film of ferromagnetic magnetoresistive material and a semi-hard magnetic storage film constitute a closed magnetic circuit, wherein the ferromagnetic magnetoresistive material has uniaxial magnetic anisotropy. A storage magnetic material having a direction that intersects at an angle with the direction of circulation in a closed magnetic circuit.

(5) A storage magnetic material in which the resistance value measurement current direction and the axis direction of the -axis magnetic anisotropy are interlinked at an angle of about 45 degrees.

The above is a storage magnetic body in which the magnetoresistive element is made of a ferromagnetic magnetoresistive material.

The storage magnetic body can be constructed even if the magnetoresistive element is made of a nonmagnetic material.

(6) A storage magnetic material in which a two-terminal magnetic resistance element is placed in a gap portion of a magnetic circuit including a semi-hard magnetic material, and the two-terminal magnetic resistance element is an element capable of detecting external magnetic fields in different directions of 180 degrees.

It is desirable that the two-terminal magnetoresistive element and the semi-hard magnetic memory film that make up the entire closed magnetic circuit be electrically insulated, but
It is not an essential requirement, and although it is preferable that the direction of the bias magnetic field is 45 degrees, it is not an essential requirement.

The storage magnetic material shown in the first example and the second example includes a semi-hard magnetic material for magnetic writing separately from the magnetoresistive film,
This is a closed magnetic circuit type. A semi-hard magnetic material is used for writing one digit. From the viewpoint of write/read speed, it is desirable that the semi-hard magnetic film has uniaxial magnetic anisotropy.

The semi-hard magnetic material for magnetic writing may be the same as the magnetoresistive film; in this case, magnetic recording is written in the magnetoresistive film, which is a semi-hard magnetic material. The one shown in (3) is of this type.

Storage Matrix The storage matrix of the invention can be realized in two structural forms. The storage cells of the first storage matrix of the invention consist of one storage magnetic material and one diode. The memory cells of the second memory matrix of the present invention are composed of two diodes and two memory magnetic bodies.

The storage matrix of the present invention has two types of conductive line groups for reading. In the description of the present invention, for ease of reading, the two types of conductive lines are referred to as word lines and digit lines.

The word line is a conductive line connected to a memory cell of a word storage magnetic material or a group of honorific words. The digit line is a conductive line connected to the output side of the memory cell.

First Memory Matrix The memory matrix of the present invention is constructed using memory cells as units.

In the first storage matrix, the storage cell is composed of one diode and one storage magnetic material, and the two-terminal magnetoresistive elements of the diode and the storage magnetic material are connected in series.

Conveniently, the storage matrix is arranged on a support substrate.

(a) The first storage matrix of the present invention is configured as follows.

The storage matrix of the present invention is comprised of storage cells, read conductive lines, and write conductive lines.

A memory cell consists of one diode and one memory magnetic material. The diode and the two-terminal magnetoresistive element forming the storage magnetic material are connected in series to form a storage cell.

The write conductive wire group consists of two types of conductive wire groups, the X conductive wire group and the It's a method. Then, at the point where the X and X conductive lines intersect, the X conductive line and the X conductive line pass through the closed magnetic circuit of the storage magnetic material, and magnetic writing is performed by a current matching method.

There are two types of read conductive wire groups, a word line group and a digit line group. The best arrangement of read conductive lines is to arrange word lines and digit lines orthogonally, and connect one memory cell to the point where the word line and digit line intersect.

The above conductor groups are electrically insulated except for the connection points.

FIG. 2 shows a first storage matrix of the present invention. FIG. 2(a) shows the first storage matrix whose word line side is connected to a power supply with positive polarity.

FIG. 2(b) shows a first memory matrix in which the word line side is connected to a negative polarity power supply.

(2) Second storage matrix One storage cell of the second storage matrix of the present invention is composed of two storage cell components. The memory cell component is composed of a diode and a two-terminal magnetoresistive element that constitutes a storage magnetic material, and is a component in which the diode and the two-terminal magnetoresistive element are connected in series. For clarity of explanation, it will be referred to hereinafter as a storage cell component.

(b) The second memory matrix of the present invention is a memory cell.

It is composed of a readout conductive wire group and a readout conductive wire group.

The storage cells of the second storage matrix consist of two diodes and two storage magnetic bodies.

One diode and a two-terminal magnetoresistive element constituting one memory magnetic body are connected in series to constitute one memory cell component. A pair of storage cell components constitute a storage cell.

The writing conductive wire groups are two types of conductive wire groups, an X conductive wire group and an X conductive wire group. The best arrangement of the writing conductive line groups of the present invention is a method in which the X conductive line groups and the X conductive line groups are arranged orthogonally.

And in a closed magnetic circuit of two memory magnetic bodies that form a pair at the point where the X and X conductive lines intersect? , an X conductive line and an X conductive line pass through each other, and magnetic writing is performed by a current matching method.

Magnetic writing involves writing in opposite directions to a pair of storage magnetic bodies. That is, by writing magnetization + ci, one of the pair of memory magnetic bodies has a large resistance value, and the other one has a small resistance value, so that the direction in which the current flows is set in the opposite direction. Alternatively, the direction of the bias magnetic field of the two-terminal magnetoresistive element is set in the opposite direction.

There are two types of read conductive wire groups, a word line group and a digit line group. The best arrangement of the read conductive lines is to arrange the word lines and digit lines orthogonally. Two digit lines form a pair and are connected to a pair of storage magnetic bodies.

One storage cell component is connected to the point where the word line and digit line intersect.

The above conductor groups are electrically insulated except for the connection points.

The third figure shows the configuration and connections of the second memory matrix.
FIG. 3(a) shows a second memory matrix in which the word line side is connected to a positive polarity power supply.

The connection direction of the diode in FIG. 3(a) is reversed in FIG. 3(b). In FIG. 3(b), the word line side is connected to a negative polarity power source.

Structure of Storage Device FIG. 6 is an overall diagram of a storage device using the first storage matrix.

(In a storage device using the first storage matrix of the present invention, a first storage matrix, a word line selection switch group, a current comparator group, an output selection switch group, a reference current source group, an address decoder, and a memory write It consists of an X conductive line driver and a Y conductive line driver.

All word lines making up the storage matrix are each connected to a power supply via one word line selection switch.

All digit lines making up the storage matrix are connected to the input terminal of a current comparator, and the digit lines are connected to a ground terminal through the current comparator.

A reference current source is connected to the other input terminal of the current comparator.

The output of the current comparator is connected to an output selection switch.

(b) A storage device using the second storage matrix of the present invention includes a second storage matrix, a group of word line selection switches, a group of current comparators, a group of output selection switches, an address decoder, and an X for memory writing. It consists of a conductive wire and a Y conductive wire driver.

All word lines making up the storage matrix are each connected to a power supply via one word line selection switch.

All digit lines making up the storage matrix are connected to the input terminal of a current comparator and, through the current comparator, to a ground terminal.

Two pairs of digit lines are connected to two input terminals of one current comparator.

The output terminal of the current comparator is connected to an output selection switch. As a word line selection switch or an output selection switch, an MIS field effect transistor is preferable.
These include OS enhancement type FETs.

In the case explained in (a) and (b), the power supply is a DC positive terminal and the ground terminal is a DC negative terminal. Similarly, it is also possible to configure a configuration in which the polarities of the power supply terminals are reversed.

operation (a) A method of magnetically writing to a storage magnetic material.

The magnetic writing of the present invention is performed using a known current matching method.

To perform magnetic writing, two groups of conductive wires are used. - The group of conductive wires is called the X conductive wire.

Another group of conductive wires is called Y conductive wire.

In the current matching method, magnetization can be reversed by the sum of the magnetomotive force caused by the current flowing through two conductive wires, X and Y, which are direct currents in the closed magnetic circuit that forms the memory magnetic material, but the current flowing through a single conductive wire This method is based on the principle that magnetization reversal will not occur if the

(b) Reading The magnetization state of the storage magnetic material is read by comparing and determining the magnitude of the current flowing through the magnetoresistive element.

(a) The first storage matrix of the present invention is of a readout type that compares the reference current and the current flowing through the digit line to determine the magnetization state of the storage magnetic material.

One switch of the word line selection switch group is selected by an address decoder, and one word line of the word line group is connected to the power supply.

When one word line is selected and connected to the power supply through the switch, a current flows to the digit line through one diode and one storage magnetic magnetoresistive element connected in series between the word line and the digit line. flows.

The current flowing through this digit line is compared with a reference current to determine the direction of magnetization written in the storage magnetic material, and the memory is read. The current value of the reference current source is set to an intermediate value between when the resistance value of the magnetoresistive element of the storage magnetic material is high resistance and when the resistance value is low resistance.

It is advisable to set the current value of the reference current source so that the influence of variations in the resistance value of the word line selection switch is compensated for.

A switch having the same characteristics as the word line selection switch may be connected in series with the reference resistor to eliminate the resistance temperature dependence of the selection switch.

Furthermore, the reference current source may be implemented in various ways (see FIG. 7) by providing a reference current source circuit via a word line selection switch.

A reference current may be passed through multiple current comparators using a current mirror circuit.

Alternatively, - reference resistors may be provided for each current comparator, and the same voltage as that applied to the word line of the storage matrix may be applied thereto to serve as a reference current source.

It is a wise choice to make the temperature resistance coefficients of the reference resistance and the magnetoresistive element of the storage magnetic material equal.

It is also a wise choice to set the reference resistance value so as to compensate for leakage current from other storage magnetic materials connected to the digit line.

In storage devices, in order to increase storage density, it is necessary to make the wiring thinner. For this reason, the resistance value of the wiring cannot be ignored.The length of the wiring leading to the storage magnetic material and the length of the wiring from the storage magnetic material to the current comparator vary depending on the location where the magnetic storage element is placed. ing.

FIG. 7 shows a system in which the power source for the current source is connected after the word line selection switch in order to compensate for changes in the length of the wiring.

This method compensates for resistance changes due to changes in digit line length. Furthermore, the influence of the resistance value of the word line selection switch is eliminated.

In order to reduce the influence of the resistance value of the word line, there is a method of providing two selection switches on both sides of the word line and supplying current from both sides of the word line.

In this way, the influence of the difference in resistance value of the word line depending on the connection location of the digit line can be reduced.

The digit line may be directly connected to the input terminal of the current comparator, or if the storage capacity is large, the digit line may be connected to the current comparator via a digit line selection switch. .

Alternatively, an output selection switch may be provided on the output side of the current comparator.

(b) The second memory matrix of the present invention uses a pair of two memory magnetic bodies as memory cell constituent elements.

This is a readout method that compares the currents flowing through a pair of digits (digital) M and determines the magnetization state of the storage magnetic material.

The advantage of this method is that the influence of the resistance value of the readout wiring is
It is to be completely eliminated.

A storage device using a second storage matrix eliminates the need for a reference current source.

The second storage matrix of the present invention is read as follows.

One word line of the word line group is selected by a word line selection switch and connected to a power supply.

The digit line is connected to the ground terminal via a current comparator.

When one word line is connected to a power supply, current flows through all digit lines through the storage cell components connected to the word line.

One of the currents flowing through the digit line becomes larger and the other becomes smaller depending on the state of magnetization of the storage magnetic material. By comparing the currents of these two digit lines using a current comparator, the magnetization direction of the magnetic memory element can be determined.

An output selection switch may be provided on the output side of the current comparator.

Further, the digit line may be connected to the current comparator via a digit line selection switch, but this method has the disadvantage of being affected by the resistance value of the selection switch.

A storage matrix using a pair of storage magnetic materials as the storage magnetic material has a lower storage density than a storage matrix using one storage magnetic material.

However, the memory reading method using a pair of storage magnetic materials can eliminate the influence of fluctuations in the resistance value of the word line selection switch by comparing the currents flowing through the two digit lines.

Furthermore, the magnitude of the current change compared is four times that of the case where one magnetic memory element is used, and is characterized by being less susceptible to noise and the like.

The above reading device can be summarized as follows.

(1) A memory/reader comprising a first memory matrix, a group of word line selection switches, a group of current comparators, and a group of reference tt current sources, wherein one of the word line selection switches is connected to a power source and one of the word lines. one of the digit wires is connected to one of the input terminals of the current comparator, one of the digit wires is connected to a ground terminal through the current comparator, and one of the digit wires is connected to one of the input terminals of the current comparator; A memory/reader having an input terminal connected to the reference current source.

(2) A memory/reader comprising a second memory matrix, a group of word line selection switches, and a group of current comparators, wherein one word line selection switch is connected between a power source and one of the word lines; The paired digit lines are connected to two input terminals of the current comparator and connected to a ground terminal through the current comparator.

Implementation mode (a) Two-terminal magnetoresistive element.

The two-terminal magnetoresistive element used in the present invention is a two-terminal magnetoresistive element made of a ferromagnetic magnetoresistive material,
It must be possible to detect the directions of storage magnetization that differ by 180 degrees.

The two-terminal magnetoresistive element constituting the storage magnetic material of the present invention is well known, and the zero-order magnetoresistive element that can be realized with various materials and structures is one example.

(1) The two-terminal magnetoresistive element is made of a ferromagnetic magnetoresistive material, the ferromagnetic magnetoresistive material has uniaxial magnetic anisotropy,
A two-terminal magnetoresistive element whose angle is the direction that intersects the detected magnetic field at an angle.

(2) A magnetoresistive element having a thin film of ferromagnetic magnetoresistive material and means for applying a bias magnetic field to the thin film, the bias magnetic field being applied by a hard magnetic film.

The thin film has two current terminals, and the direction of the bias magnetic field intersects the direction of the current flowing through the terminals at an angle to the two-terminal magnetoresistive element.

<3) The two-terminal magnetoresistive element according to item 2, in which the bias magnetic field is based on a shunt current.

FIG. 9 shows the bias direction and the external magnetic field direction of a two-terminal magnetoresistive element having a structure with a bias magnetic field.

The relationship between the directions of the combined magnetic field is shown.

Various methods are known for applying a bias magnetic field to a magnetoresistive film.

A magnetoresistive element may have a structure in which a hard magnetic film is provided in close contact with a magnetoresistive film and a bias magnetic field is applied.

Alternatively, the magnetoresistive film itself may be made of a hard magnetic material, and the -axis magnetic anisotropy may be provided with the -axis magnetic anisotropy inclined by an angle θ with respect to the current direction.

Nickel-cobalt alloys are known to have a large magnetoresistive effect. An external magnetic field can also be detected by forming uniaxial magnetic anisotropy in this material and rotating the magnetization direction by an external magnetic field.

(b) Regarding the current comparator.

Various embodiments of the current comparator are possible. Figure 8, (
Those shown in a), (b), and (c) are examples of current comparators. Although the input transistor shown in FIGS. 8(a), 8(b), and 8(c) is an NPN transistor, a PNP transistor may also be used.

A PNP (PNP) transistor is required when the diode connection direction of the storage matrix is reversed.

The one shown in FIG. 8(a) is the simplest current comparator. The directions of the two input currents are opposite. This type of comparator can therefore be used for the first type of storage matrix.

The one shown in FIG. 8(b) is used by connecting a voltage comparator having an operation input terminal at the rear stage.

Since the transistors used are of the same conductivity type, it is easy to manufacture transistors with the same characteristics, and the operating point can be adjusted using an impedance element connected to the load. Figure 8,
What is shown in (c) is the input stage of a current comparator using a current mirror circuit.

Connected after this is an amplification stage whose input is current and whose output is voltage.

(c) Regarding other examples.

Various embodiments are also possible for the diode. The diode used in the present invention may be a diode made of a Li crystalline semiconductor, a diode made of an amorphous semiconductor, or a Schottky diode.

The support substrate may be on a chip on which the diode group is formed.

A hybrid structure may also be used in which the switch group is formed on a single-crystal silicon chip and the memory matrix is formed from an amorphous silicon thin film. In this way, a large-scale memory device can be realized.

Effect (1) The most significant economic effect of the present invention is that it can provide a nonvolatile memory with high access speed. Furthermore, (2) the number of elements constituting one storage magnetic body is small, and a high-density nonvolatile storage device can be realized.

(3) The storage magnetic material can take the form of a closed magnetic circuit.

This is advantageous in terms of malfunctions due to leakage of magnetic flux and magnetic writing.

[Brief explanation of the drawing]

FIG. 1(a), FIG. 1(b), storage cell components of the present invention. FIG. 2(a), FIG. 2(b) A portion of the first storage matrix of the present invention. Figure 3 (a), Figure 3 (b), a portion of the second storage matrix of the present invention. FIG. 4(a) and FIG. 4(b) are diagrams of a reading device for the first storage matrix. FIGS. 5(a) and 5(b) are diagrams of a second storage matrix readout device. FIG. 6(a) is an example of a block diagram of a storage device using the first storage matrix. FIG. 6(b) An example of a storage device block diagram using the second storage matrix, FIG.
In a storage device using a first storage matrix,
FIG. 7 is a diagram showing a method in which a reference current source is taken from behind a word line selection switch. Figure 8 (a), (b), and (c), examples of current comparators. FIG. 9 is a diagram showing the relationship between the bias magnetic field and the detection magnetic field of the two-terminal magnetoresistive element. ■, Two-terminal magnetoresistive element 2. Diode 3. Semi-hard magnetic film 4. Insulating film 5. X conductive wire 6. Y conductive wire
7. Word picture 8. Digit line 9. Power supply 10, word line selection switch 11. First memory matrix 12
．． Current comparator 13. Reference current source 14. Ground wire 15
．． Second memory matrix 16. Output selection switch 17. Output terminal Figure 1 (a) Figure 2 (a) Figure 1 (b) Figure 2 (b) Figure 3 (al Figure 4 (a) Figure 5 (a) Decoder Figure 6 (b) Figure 7 Figure 9 Figure 8 Amendment Attachment. Director General of the Patent Office Fumitake Yoshida Mr. J. Indication of the case 1988 Patent Application No. 63-297049 2. Title of the invention Memory matrix. 3. Person making the amendment Relationship to the case Patent applicant 5, Date of amendment order Voluntary action 6, Number of claims increased by amendment 0 Item 7, Subject of amendment The full text of the scope of claims after amendment in the scope of claims column is as follows: Claims (1) A memory cell component consisting of a two-terminal magnetoresistive element and a diode connected in series, wherein the two-terminal magnetoresistive element is an element capable of detecting external magnetic fields in different directions of 180 degrees. Further, the two-terminal magnetoresistive element is made of a ferromagnetic magnetoresistive material and forms a part of a closed magnetic circuit having a space for the conductive wire to pass through, and the closed magnetic circuit has a semi-rigid material in a part thereof. A memory cell component characterized by containing a magnetic material. (2) A memory cell component comprising a two-terminal magnetoresistive element and a diode connected in series, the two-terminal magnetoresistive element being arranged in different directions by 180 degrees. The two-terminal magnetic resistance element is an element capable of detecting an external magnetic field, and the two-terminal magnetic resistance element is placed in a gap portion of a closed magnetic circuit having a space for the conductive wire to pass through, and the closed magnetic circuit has at least a portion thereof semi-hard magnetic. (3) A memory matrix comprising a memory cell component group according to the first or second item, a write conductive line group, and a read conductive line group. (a) The write conductive wire group consists of an X conductive wire group and a Y conductive wire group, one X conductive wire and one Y conductive wire intersect at one location, and the intersection constitutes the memory cell component. (b) the reading conductor group consists of a word line group and a digit line group, one of the word lines and one of the digit lines intersects at one place; A memory characterized in that one resistor and one resistor are connected between the word line and the digit line. (c) The diodes are connected in the same direction. Matrix. (4) A memory matrix comprising a group of memory cell constituent elements, a write conductive line group, and a read conductive line group according to the first or second term, wherein two of the memory cell constituent elements form a pair. none. (a) The writing conductive line group consists of an X conductive line group and a Y conductive line group, one X conductive line and one Y conductive line intersect at one place, and the memory forming the pair at the intersection It passes through the space of the two closed magnetic circuits constituting the cell component, and the memory writing direction of the two closed magnetic circuits forming a pair is opposite to the magnetic resistance element constituting the closed magnetic circuit. It is a direction that brings about effects. (b) The readout conductive line group consists of a word line group and a digit line group, one of the word lines and one of the digit lines intersects at one place, and is directly in contact with the intersection.
Kiobika 4 Oni = Mipo 3 Ji Enoki Resistance b 1 child〃One is connected between the word line and the digit line, two of the digit lines form a pair, and the memory cells form a pair. (c) a memory matrix connected to a component, characterized in that (c) all of the diodes are connected in the same direction; The full text of the amended patent claims is as above. The amendment shall be made to claim (3), the underlined part, and claim (4).
) is the underlined part. There is no amendment to claim 1, paragraph 2. that's all

Claims (4)

[Claims] (1) A memory cell component consisting of a two-terminal magnetoresistive element and a diode connected in series, the two-terminal magnetoresistive element being an element capable of detecting external magnetic fields different in 180 degree directions, and further comprising: The magnetoresistive element is made of a ferromagnetic magnetoresistive material and forms part of a closed magnetic circuit having a space for the conductive wire to pass through, and the closed magnetic circuit includes a semi-hard magnetic material in a part thereof. Featured memory cell components. (2) A memory cell component consisting of a two-terminal magnetoresistive element and a diode connected in series, the two-terminal magnetoresistive element being an element capable of detecting external magnetic fields different in 180 degree directions, and further comprising: A memory cell component characterized in that a magnetoresistive element is placed in a gap portion of a closed magnetic circuit having a space for a conductive wire to pass through, and the closed magnetic circuit includes a semi-hard magnetic material in at least a portion thereof. (3) A memory matrix comprising a memory cell component group, a write conductive wire group, and a read conductive wire group according to the first or second paragraph, wherein (a) the write conductive wire group is an X conductive wire group; Consisting of a group of Y conductive wires, one X conductive wire and one Y conductive wire intersect at one place, and pass through the space of the closed magnetic circuit constituting the memory cell component at the intersection, b) The readout conductor group consists of a word line group and a digit line group, one of the word lines and one of the digit lines intersects at one point, and the memory cell component described in item 1 is inserted at the intersection. A memory matrix connected between the word line and the digit line, wherein (c) the diodes are all connected in the same direction. (4) A memory matrix comprising a group of memory cell constituent elements, a write conductive line group, and a read conductive line group according to the first or second item, wherein two of the memory cell constituent elements form a pair; (a) The write conductive line group consists of an X conductive line group and a Y conductive line group, one X conductive line and one Y conductive line intersect at one place, and the storage cell structure forms the pair at the intersection. It passes through the space of the two closed magnetic circuits constituting the element, and the memory writing direction of the two closed magnetic circuits forming a pair produces a magnetoresistive effect in the opposite direction on the magnetoresistive element constituting the closed magnetic circuit. (b) The read conductive line group consists of a word line group and a digit line group, one of the word lines and one of the digit lines intersects at one place, and the memory cell is connected at the intersection. one component is connected between the word line and the digit line; two of the digit lines form a pair and are connected to a pair of the storage cell components; A memory matrix characterized in that the diodes are connected in the same direction.