JPH0214320B2 - - Google Patents
Info
- Publication number
- JPH0214320B2 JPH0214320B2 JP57168455A JP16845582A JPH0214320B2 JP H0214320 B2 JPH0214320 B2 JP H0214320B2 JP 57168455 A JP57168455 A JP 57168455A JP 16845582 A JP16845582 A JP 16845582A JP H0214320 B2 JPH0214320 B2 JP H0214320B2
- Authority
- JP
- Japan
- Prior art keywords
- substrate
- melt
- crystal growth
- inp
- atmosphere containing
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 239000000758 substrate Substances 0.000 claims description 36
- 239000013078 crystal Substances 0.000 claims description 15
- 229910052698 phosphorus Inorganic materials 0.000 claims description 14
- 229910052785 arsenic Inorganic materials 0.000 claims description 13
- 238000002109 crystal growth method Methods 0.000 claims description 5
- 229910052738 indium Inorganic materials 0.000 claims description 5
- 239000004065 semiconductor Substances 0.000 claims description 4
- 150000001875 compounds Chemical class 0.000 claims description 3
- 229910052751 metal Inorganic materials 0.000 claims description 3
- 239000002184 metal Substances 0.000 claims description 3
- 229910052725 zinc Inorganic materials 0.000 claims description 2
- 238000010494 dissociation reaction Methods 0.000 claims 1
- 230000005593 dissociations Effects 0.000 claims 1
- 229910052718 tin Inorganic materials 0.000 claims 1
- 239000000155 melt Substances 0.000 description 8
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 6
- 239000007789 gas Substances 0.000 description 6
- 229910052799 carbon Inorganic materials 0.000 description 5
- 238000000034 method Methods 0.000 description 5
- 230000000694 effects Effects 0.000 description 4
- 239000010408 film Substances 0.000 description 3
- 235000012431 wafers Nutrition 0.000 description 3
- 229910000673 Indium arsenide Inorganic materials 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- RPQDHPTXJYYUPQ-UHFFFAOYSA-N indium arsenide Chemical compound [In]#[As] RPQDHPTXJYYUPQ-UHFFFAOYSA-N 0.000 description 2
- 230000010355 oscillation Effects 0.000 description 2
- 239000012071 phase Substances 0.000 description 2
- 239000007790 solid phase Substances 0.000 description 2
- 239000012808 vapor phase Substances 0.000 description 2
- 239000000470 constituent Substances 0.000 description 1
- 238000002425 crystallisation Methods 0.000 description 1
- 230000008025 crystallization Effects 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 229910002804 graphite Inorganic materials 0.000 description 1
- 239000010439 graphite Substances 0.000 description 1
- 239000007791 liquid phase Substances 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 238000013508 migration Methods 0.000 description 1
- 230000005012 migration Effects 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 230000000737 periodic effect Effects 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 230000008707 rearrangement Effects 0.000 description 1
- 238000007788 roughening Methods 0.000 description 1
- 229920006395 saturated elastomer Polymers 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B19/00—Liquid-phase epitaxial-layer growth
- C30B19/12—Liquid-phase epitaxial-layer growth characterised by the substrate
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP16845582A JPS5957999A (ja) | 1982-09-29 | 1982-09-29 | 結晶成長方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP16845582A JPS5957999A (ja) | 1982-09-29 | 1982-09-29 | 結晶成長方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5957999A JPS5957999A (ja) | 1984-04-03 |
| JPH0214320B2 true JPH0214320B2 (zh) | 1990-04-06 |
Family
ID=15868422
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP16845582A Granted JPS5957999A (ja) | 1982-09-29 | 1982-09-29 | 結晶成長方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5957999A (zh) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS59190299A (ja) * | 1983-04-07 | 1984-10-29 | Agency Of Ind Science & Technol | 燐化インジウム結晶の熱変形防止方法 |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5559716A (en) * | 1978-10-30 | 1980-05-06 | Nec Corp | Liquid phase growing method of 3-5 group compound semiconductor |
| JPS571888A (en) * | 1980-05-31 | 1982-01-07 | Bridgestone Tire Co Ltd | Fiber reinforced hose and its manufacture |
-
1982
- 1982-09-29 JP JP16845582A patent/JPS5957999A/ja active Granted
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5559716A (en) * | 1978-10-30 | 1980-05-06 | Nec Corp | Liquid phase growing method of 3-5 group compound semiconductor |
| JPS571888A (en) * | 1980-05-31 | 1982-01-07 | Bridgestone Tire Co Ltd | Fiber reinforced hose and its manufacture |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS5957999A (ja) | 1984-04-03 |
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