JPH02140972U - - Google Patents
Info
- Publication number
- JPH02140972U JPH02140972U JP4767089U JP4767089U JPH02140972U JP H02140972 U JPH02140972 U JP H02140972U JP 4767089 U JP4767089 U JP 4767089U JP 4767089 U JP4767089 U JP 4767089U JP H02140972 U JPH02140972 U JP H02140972U
- Authority
- JP
- Japan
- Prior art keywords
- cathode electrode
- film
- plasma
- processing chamber
- raw material
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000002184 metal Substances 0.000 claims description 6
- 239000000758 substrate Substances 0.000 claims description 4
- 238000005268 plasma chemical vapour deposition Methods 0.000 claims description 3
- 230000002265 prevention Effects 0.000 claims description 3
- 230000015572 biosynthetic process Effects 0.000 claims 2
- 239000002994 raw material Substances 0.000 claims 2
- 238000000151 deposition Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
Landscapes
- Chemical Vapour Deposition (AREA)
Description
第１図は防着板を設けた基板移動式のプラズマ
ＣＶＤ装置の截断側面図、第２図は本考案の実施
例の截断側面図である。
１……真空処理室、３……カソード電極、４…
…アノード電極、６……基板、１０……防着板、
１１……有孔金属板、１３……ガス導入口。
FIG. 1 is a cutaway side view of a substrate moving type plasma CVD apparatus provided with an adhesion prevention plate, and FIG. 2 is a cutaway side view of an embodiment of the present invention. 1... Vacuum processing chamber, 3... Cathode electrode, 4...
... Anode electrode, 6 ... Substrate, 10 ... Deposition prevention plate,
11...Perforated metal plate, 13...Gas inlet.
Claims (1)
を設け、両電極間のプラズマ放電により該真空処
理室内に導入した成膜用の原料ガスを反応させ、
該カソード電極の前方を移動する基板に成膜を施
すようにしたものに於て、該カソード電極と基板
の移動経路との間に該カソード電極前方のみで成
膜するよう防着板を設け、該カソード電極の前方
の周囲を金属メツシユ、パンチングメタル、発泡
金属等の有孔金属板で囲うことを特徴とするプラ
ズマＣＶＤ装置。 ２ 前記有孔金属板に成形される孔径は、成膜用
の原料ガスの流通を許容するがプラズマが漏れ出
ない寸法を有することを特徴とする請求項１記載
ののプラズマＣＶＤ装置。[Claims for Utility Model Registration] 1. A cathode electrode and an anode electrode are provided in a vacuum processing chamber, and a raw material gas for film formation introduced into the vacuum processing chamber is reacted by plasma discharge between the two electrodes.
In a device in which a film is formed on a substrate moving in front of the cathode electrode, an adhesion prevention plate is provided between the cathode electrode and the moving path of the substrate so that the film is formed only in front of the cathode electrode, A plasma CVD apparatus characterized in that the front periphery of the cathode electrode is surrounded by a perforated metal plate such as a metal mesh, punched metal, or foamed metal. 2. The plasma CVD apparatus according to claim 1, wherein the diameter of the hole formed in the perforated metal plate has a size that allows the flow of a raw material gas for film formation but prevents plasma from leaking out.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1989047670U JPH0630850Y2 (en) | 1989-04-25 | 1989-04-25 | Plasma CVD equipment |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1989047670U JPH0630850Y2 (en) | 1989-04-25 | 1989-04-25 | Plasma CVD equipment |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH02140972U true JPH02140972U (en) | 1990-11-26 |
| JPH0630850Y2 JPH0630850Y2 (en) | 1994-08-17 |
Family
ID=31563804
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP1989047670U Expired - Lifetime JPH0630850Y2 (en) | 1989-04-25 | 1989-04-25 | Plasma CVD equipment |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0630850Y2 (en) |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5944770U (en) * | 1982-09-18 | 1984-03-24 | 日電アネルバ株式会社 | Plasma CVD equipment |
| JPS5972722A (en) * | 1982-09-16 | 1984-04-24 | エナ−ジ−・コンバ−シヨン・デバイセス・インコ−ポレ−テツド | Substrate shield for preventing irregular film from deposit-ing |
| JPS60117715A (en) * | 1983-11-30 | 1985-06-25 | Zenko Hirose | Forming method of film |
| JPS62185879A (en) * | 1986-02-12 | 1987-08-14 | Kobe Steel Ltd | Formation of amorphous carbon film |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5944770B2 (en) * | 1980-07-25 | 1984-11-01 | 三菱電機株式会社 | Cleaning method for plasma CVD reactor |
-
1989
- 1989-04-25 JP JP1989047670U patent/JPH0630850Y2/en not_active Expired - Lifetime
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5972722A (en) * | 1982-09-16 | 1984-04-24 | エナ−ジ−・コンバ−シヨン・デバイセス・インコ−ポレ−テツド | Substrate shield for preventing irregular film from deposit-ing |
| JPS5944770U (en) * | 1982-09-18 | 1984-03-24 | 日電アネルバ株式会社 | Plasma CVD equipment |
| JPS60117715A (en) * | 1983-11-30 | 1985-06-25 | Zenko Hirose | Forming method of film |
| JPS62185879A (en) * | 1986-02-12 | 1987-08-14 | Kobe Steel Ltd | Formation of amorphous carbon film |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0630850Y2 (en) | 1994-08-17 |
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