JPH02139974A - Gaas-on-si solar cell - Google Patents
Gaas-on-si solar cellInfo
- Publication number
- JPH02139974A JPH02139974A JP63293418A JP29341888A JPH02139974A JP H02139974 A JPH02139974 A JP H02139974A JP 63293418 A JP63293418 A JP 63293418A JP 29341888 A JP29341888 A JP 29341888A JP H02139974 A JPH02139974 A JP H02139974A
- Authority
- JP
- Japan
- Prior art keywords
- solar cell
- gaas
- insulating film
- substrate
- welding
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 229910001218 Gallium arsenide Inorganic materials 0.000 claims abstract description 36
- 239000000758 substrate Substances 0.000 claims abstract description 21
- 239000002184 metal Substances 0.000 claims abstract description 13
- 238000003466 welding Methods 0.000 abstract description 11
- 238000000034 method Methods 0.000 abstract description 8
- 238000005530 etching Methods 0.000 abstract description 4
- 230000002542 deteriorative effect Effects 0.000 abstract description 3
- 230000006378 damage Effects 0.000 abstract description 2
- 230000003685 thermal hair damage Effects 0.000 abstract description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract 4
- 229910052681 coesite Inorganic materials 0.000 abstract 2
- 229910052906 cristobalite Inorganic materials 0.000 abstract 2
- 239000000377 silicon dioxide Substances 0.000 abstract 2
- 235000012239 silicon dioxide Nutrition 0.000 abstract 2
- 229910052682 stishovite Inorganic materials 0.000 abstract 2
- 229910052905 tridymite Inorganic materials 0.000 abstract 2
- 230000015556 catabolic process Effects 0.000 abstract 1
- 230000006866 deterioration Effects 0.000 abstract 1
- 230000000694 effects Effects 0.000 description 5
- 229910000980 Aluminium gallium arsenide Inorganic materials 0.000 description 3
- 238000010586 diagram Methods 0.000 description 2
- 238000009413 insulation Methods 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 101100435233 Arabidopsis thaliana ARC6 gene Proteins 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000000969 carrier Substances 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000005553 drilling Methods 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000000605 extraction Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 238000010248 power generation Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
Classifications
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
Landscapes
- Photovoltaic Devices (AREA)
Abstract
Description
【発明の詳細な説明】
〔産業上の利用分野〕
この発明は軽量、高性能太陽電池であるＧａＡ６ｏｎＳ
ｉ太陽電池に関し、特にその電極構造に関するものであ
る。[Detailed description of the invention] [Industrial application field] This invention is a lightweight, high-performance solar cell, GaA6onS.
This invention relates to i-solar cells, and particularly to its electrode structure.
第２図は例えば１９８’Ｊ年開、催第８回太陽光発電国
際会議の発表論文集の１９８頁に示された従来のＧａＡ
ｓｏｎｓｉ太陽電池を示す断面図であり、図において、
１はＳｉ基板、２はこのＳｉ基板１上にエピタキシャル
成長させたｎ形ＧａＡｓ１３はさらにその上に成長させ
たＧａＡｓとＡＩＧａＡＳの超格子（以下ＧａＡｓ／Ａ
ｌＧａＡｓ超格子と称す）、２゛は太陽電池の能動層と
してのｎ形Ｇ ａ Ａ ８１４はＧａＡｓ／ＡｌＧａＡ
ｓ超格子３の上に形成されたｎ形ＧａＡｓ２−の上に形
成され、太陽電池の能動層として光エネルギーを吸収し
発電するｐｎ接合形成のためのｐ形ＧａＡｓ５５はｐ形
ＧａＡｓ４の上に形成され、太陽電池の窓層の役割を果
たすｐ形Ａ Ｉ Ｇ ａ Ａ ８ Ｎ Ｂは太陽電池内
部へできるだけ多くの光を入射させるための反射防止膜
（以下ＡＲＣと称す）、７はＡＲＣ６及びｐ形ＡｌＧａ
Ａｓ５に穴を開け、ｐ形ＧａＡ３にコンタクトするよう
にパターニング形成され、光照射により発生した光電流
を有効に収集、外部へ取り出すためのｐ側メタル電極、
８はＳｉ基板の裏面側に形成されたｎ側メタル電極であ
る。Figure 2 shows, for example, the conventional GaA shown on page 198 of the collection of papers presented at the 8th International Conference on Solar Power Generation held in 198'J.
It is a sectional view showing a sonsi solar cell, and in the figure,
1 is a Si substrate, 2 is an n-type GaAs 13 epitaxially grown on this Si substrate 1, and a superlattice of GaAs and AIGaAS (hereinafter referred to as GaAs/A
814 is GaAs/AlGaA as the active layer of the solar cell.
The p-type GaAs 55 is formed on the n-type GaAs2- formed on the s superlattice 3, and the p-type GaAs 55 is formed on the p-type GaAs4 to form a p-n junction that absorbs light energy and generates electricity as the active layer of the solar cell. The p-type A I G a A 8 N B, which plays the role of the window layer of the solar cell, is an anti-reflection coating (hereinafter referred to as ARC) to allow as much light as possible to enter the inside of the solar cell, and 7 is an ARC6 and p-type Shape AlGa
A p-side metal electrode is formed by drilling a hole in As5 and patterning it to contact p-type GaA3, and effectively collects the photocurrent generated by light irradiation and takes it out to the outside.
8 is an n-side metal electrode formed on the back side of the Si substrate.
次に動作について説明する。Next, the operation will be explained.
光がＡＲＣ８及びｐ形ＡｌＧａＡｓ５を通してｐ形Ｇａ
Ａｓ４及びｎ形ＧａＡｓ５に入射すると該入射した光は
この領域で吸・収され、電子と正孔のキャリアに変換さ
れｐ形ＧａＡｓ４で発生した電子はｐｎ接合を通しｎ形
ＧａＡｓ２へ、ｎ形ＧａＡｓ２で発生した正孔はｐｎ接
合を通しｐ形ＧａＡｓ４へそれぞれ拡散してゆき、正の
電荷がｐ側メタル電極７、負の電荷がｎ側メタル電極８
へ収集され、この端子間に電圧が発生しこの端子間から
電流を取り出すことができる。Light passes through ARC8 and p-type AlGaAs5 to p-type Ga
When incident light enters As4 and n-type GaAs5, the incident light is absorbed in this region and converted into carriers of electrons and holes. The electrons generated in p-type GaAs4 pass through the p-n junction to n-type GaAs2, and are transferred to n-type GaAs2. The generated holes diffuse into the p-type GaAs 4 through the p-n junction, and the positive charges are transferred to the p-side metal electrode 7 and the negative charges are transferred to the n-side metal electrode 8.
A voltage is generated between these terminals, and a current can be extracted from between these terminals.
従来のＧａＡｓｏｎＳｉ太陽電池は以上のように構成さ
れているので、原理上電流の取り出しに問題がないよう
に見えるが、実際に太陽電池として使用する場合は、こ
のｐ電極７及びｎ電極８側に電流取り出しのためのイン
ターコネクタを接続する必要がある。この接続にはＧａ
ＡｓｏｎＳｉ太陽電池等では、−膜内には信顆性の高い
パラレルギャップ溶接法が用いられているが、この方式
を第２図に示すような構造のＧａＡｓｏｎＳｉ太陽電池
に適用すると、熱ダメージによりｐ側電極７下のＧａＡ
ｓ層を破壊し、太陽電池特性を著しく・低下させてしま
・う七いう実用上の問題点があった。Since the conventional GaAsonSi solar cell is configured as described above, there seems to be no problem in drawing out the current in principle, but when actually used as a solar cell, there are It is necessary to connect an interconnector for current extraction. This connection requires Ga
In AsonSi solar cells, etc., a parallel gap welding method with high fidelity is used inside the film. However, when this method is applied to a GaAsonSi solar cell with a structure as shown in Figure 2, P GaA under side electrode 7
There were practical problems in that the S-layer was destroyed and the solar cell characteristics were significantly degraded.
この発明は上記のような問題点を解消するためになされ
たもので、太陽電池特性を低下させることなくｐ側電極
にインターコネクタを溶接できるＧａＡｓｏｎＳｉ太陽
電池を得ることを目的とする。This invention was made to solve the above-mentioned problems, and aims to obtain a GaAsonSi solar cell in which an interconnector can be welded to the p-side electrode without deteriorating the solar cell characteristics.
この発明に係るＧａＡｓｏｎＳｉ太陽電池は、まず最初
に電極溶接部分を形成するための絶縁膜を形成し、その
後ＧａＡｓ太陽電池部分を絶縁膜の非形成領域に選択成
長させ、最後に形成する反射防止膜及びおよびメタル電
極を上記絶縁膜上にまで延伸形成するようにしたもので
ある。In the GaAsonSi solar cell according to the present invention, an insulating film for forming an electrode welding part is first formed, then a GaAs solar cell part is selectively grown in an area where the insulating film is not formed, and finally an antireflection film is formed. and a metal electrode is formed extending over the insulating film.
この発明においては、ｐ側メタル電極のインターコネク
タ溶接部分は１．ＧａＡｓ太陽電池能動層の上でなく機
能上挙なる保持材であるＳｉ基板上の絶縁膜上に形成さ
れていることにより、太陽電池特性を低下させることな
く容易にインターコネクタを溶接するこ・とができる。In this invention, the interconnector welding portion of the p-side metal electrode is 1. Since it is formed not on the GaAs solar cell active layer but on the insulating film on the Si substrate, which is a functional holding material, the interconnector can be easily welded without deteriorating the solar cell characteristics. Can be done.
以下、この発明の一実施例を図について説明する。 An embodiment of the present invention will be described below with reference to the drawings.
第１図において、１はＳｉ基板、９はこのＳｌ基板１上
に形成した絶縁膜、２は絶縁ＩＩ９を形成したＳｉ基板
１上に選択成長させた′ｎ形Ｇ ａ Ａ ｓ ｓ３はそ
の上に形成した歪み緩和のＧａＡｓ／ＡｌＧａＡｓ超格
子、２′はＧａＡｓ太陽電池の能動層としてのｎ形Ｇ
ａ Ａ ｓ ｓ ４はその上のｐ形ＧａＡｓ５５は太
陽電池の窓層としてのｐ形ＡｌＧａＡｓ１ Ｂは反射防
止膜であり、この実施例では絶縁性の５ｔａＮｎを想定
しており、Ｉ）ｎ接合も含めたＧ ａ’Ａ ｓ結晶端面
及び絶縁膜９をもパッシベートシている。７は反射防止
膜６及びｐ形ＡｌＧａＡｓ５に開けられたコンタクトホ
ールを介しｐ形ＧａＡｓ４とコンタクトす、るとともに
その延長がＳｉ基板１上に形成された絶縁膜θ上まで延
伸形成されているｐ側メタル電極、８はＳｔ基板１裏面
に形成されたｎ側メタル電極である。In FIG. 1, 1 is a Si substrate, 9 is an insulating film formed on this Sl substrate 1, and 2 is an 'n-type GaAs s3 selectively grown on the Si substrate 1 on which insulation II9 is formed. strain-relaxed GaAs/AlGaAs superlattice formed in
a A s s 4 is p-type GaAs on it 55 is p-type AlGaAs as a window layer of the solar cell 1 B is an anti-reflection film, and in this example, insulating 5taNn is assumed, and I)n junction is also used. The included Ga'As crystal end face and the insulating film 9 are also passivated. Reference numeral 7 denotes a p-side layer which is in contact with the p-type GaAs 4 through the anti-reflection film 6 and the contact hole made in the p-type AlGaAs 5, and whose extension extends over the insulating film θ formed on the Si substrate 1. The metal electrode 8 is an n-side metal electrode formed on the back surface of the St substrate 1.
本発明の太陽電池の基本的動作原理については従来例と
同様であるので説明を省略し、本実施例の構造により得
られる効果について述べる。Since the basic operating principle of the solar cell of the present invention is the same as that of the conventional example, the explanation will be omitted, and the effects obtained by the structure of this embodiment will be described.
第１にＳｉ基板上にインターコネクタ溶接部７を形成し
たことにより溶接時の熱ダメージでＧａＡｓ太陽電池部
が破壊され、太陽電池特性が低下するようなことがなく
なる。First, by forming the interconnector welded portion 7 on the Si substrate, the GaAs solar cell portion will not be destroyed due to thermal damage during welding and the solar cell characteristics will not deteriorate.
第２にＳｉ基板上の絶縁１１Ｅ９がＧａＡｓ等に比べて
熱を伝えにくいことから、溶接時の投入エネルギーを減
少させることができるので、さらに太陽電池へのダメー
ジが少なくなる。このと、とから現在では不可能なイン
ターコネクタの溶接が実用レベルで可能になる。Second, since the insulation 11E9 on the Si substrate conducts heat less easily than GaAs or the like, the energy input during welding can be reduced, further reducing damage to the solar cell. With this and, welding of interconnectors, which is currently impossible, becomes possible at a practical level.
第８にＳｉ基板上に始めにＳｉｎ、等の絶縁膜を形成し
その後ＧａＡｓを成長させると５ｉ０２上にはＧａＡｓ
が成長しないという選択性によってその後のエツチング
プロセスを簡略化することができる。ここで、始めにＧ
ａＡｓ太陽電池部分を形成し、後から絶縁膜を形成する
製造方法では、ければならない点や、′数種のＧａＡｓ
系の膜をエツチングするプロセスが必要になるなど生産
性が問題になるが、本発明ではＳＮ基板上に始めに５ｉ
０２等の絶縁膜を形成しその後ＧａＡｓを成長させるこ
とによってＳｉｎ、上にはＧａＡｓが成長しないという
選択性を利用するようにしているので、その後のエツチ
ングプロセスを大きく簡略化できる。Eighth, if an insulating film such as Sin is first formed on the Si substrate and then GaAs is grown, GaAs is formed on 5i02.
The selectivity of no growth simplifies the subsequent etching process. Here, at the beginning, G
In the manufacturing method in which the aAs solar cell part is formed and the insulating film is formed later, there are certain points that must be met, and that several types of GaAs
Although productivity is a problem as a process of etching the system film is required, in the present invention, the 5i film is first deposited on the SN substrate.
By forming an insulating film such as 02 and then growing GaAs, the selectivity that GaAs does not grow on Sin is utilized, so the subsequent etching process can be greatly simplified.
このように本発明では低価格で高信頼性のＧａＡｓｏｎ
Ｓｉ太陽電池が得られるものである。In this way, the present invention utilizes low-cost and highly reliable GaAson.
A Si solar cell is obtained.
なお上記実施例では絶縁膜９にＳ ｉ Ｏ，を利用した
ものを示したが、高い絶縁性を有するものであれば他の
材質を用いても良い。In the above embodiment, the insulating film 9 is made of SiO, but other materials may be used as long as they have high insulating properties.
また上記実施例では太陽電池について説明したが、Ｇａ
Ａｓ ｏｎ Ｓ ｉ構造の他の半導体デバイスであって
もよく、上記実施例と同様の効果を奏する。Furthermore, in the above embodiment, a solar cell was explained, but Ga
Other semiconductor devices having an As on Si structure may be used, and the same effects as in the above embodiments can be achieved.
以上のように、この発明によれば、ＧａＡｓ 。 As described above, according to the present invention, GaAs.
ｎＳｌ太陽電池において、プロセスの最初にＳｔ基板上
に絶縁膜を形成し一＊ ＧａＡｓエピ層の形成後イン
ターコネクタ溶接部である反射防止膜およびメタル金属
を上記ＳＮ基板上の絶縁膜上まで延伸形成するようにし
たので、実用性のある軽量ＧＢＡ６ｏｎＳｉ太陽電池を
容易に製造できるという効果がある。In the nSl solar cell, an insulating film is formed on the St substrate at the beginning of the process, and after the formation of the GaAs epi layer, an anti-reflection film and metal, which are interconnector welding parts, are extended to the insulating film on the SN substrate. This has the effect that a practical and lightweight GBA6onSi solar cell can be easily manufactured.
第１図はこの発明の一実施例によるＧａＡｓ 。
ｎＳｉ太陽電池を示す断面構造図、第２図は従来のＧａ
ＡｓｏｎＳｉ太陽電池を示す断面構造図である。
図において、１はＳｉ基板、２はｎ形ＧａＡｓ１２゛は
ＧａＡｓ太陽電池の能動層としてのｎ形ＧａＡｓ５３は
Ｇ ａ Ａ ｓ ／ Ａ Ｉ Ｇ ａ Ａ ｓ超格子、
４はｐ形Ｇ ａ Ａ Ｓ１５はｐ形Ａ Ｉ Ｇ ａ Ａ
８％ ８は絶縁性反射防止膜、７はｐ側メタル電極、
８はｎ側メタル電極、９は絶縁膜である。
なお図中同一符号は同−又は相当部分を示す。FIG. 1 shows a GaAs film according to an embodiment of the present invention. A cross-sectional structural diagram showing an nSi solar cell, Figure 2 is a conventional Ga solar cell.
FIG. 2 is a cross-sectional structural diagram showing an AsonSi solar cell. In the figure, 1 is a Si substrate, 2 is n-type GaAs, 12 is n-type GaAs as an active layer of a GaAs solar cell, and 53 is a GaAs/AIGaAs superlattice.
4 is p-type G a A S15 is p-type A I G a A
8% 8 is an insulating anti-reflection film, 7 is a p-side metal electrode,
8 is an n-side metal electrode, and 9 is an insulating film. Note that the same reference numerals in the figures indicate the same or equivalent parts.
Claims (1)
板上の上記絶縁膜の非形成領域に順次選択的にエピタキ
シャル成長されたｎ形ＧａＡｓ層及びｐ形ＧａＡｓ層と
、 該ｎ形ＧａＡｓ層及びｐ形ＧａＡｓ層上に形成され、か
つ上記絶縁膜上まで延伸形成された反射防止膜及びメタ
ル電極とを備えたことを特徴とするＧａＡｓｏｎＳｉ太
陽電池。[Scope of Claims] 1) An insulating film formed on a part of a Si substrate, and an n-type GaAs layer and a p-type GaAs layer epitaxially grown selectively in sequence on regions where the insulating film is not formed on the Si substrate. A GaAsonSi solar cell comprising: an antireflection film and a metal electrode formed on the n-type GaAs layer and the p-type GaAs layer and extending onto the insulating film.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP63293418A JPH0793449B2 (en) | 1988-11-18 | 1988-11-18 | GaAs on Si solar cell |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP63293418A JPH0793449B2 (en) | 1988-11-18 | 1988-11-18 | GaAs on Si solar cell |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH02139974A true JPH02139974A (en) | 1990-05-29 |
| JPH0793449B2 JPH0793449B2 (en) | 1995-10-09 |
Family
ID=17794512
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP63293418A Expired - Lifetime JPH0793449B2 (en) | 1988-11-18 | 1988-11-18 | GaAs on Si solar cell |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0793449B2 (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5356509A (en) * | 1992-10-16 | 1994-10-18 | Astropower, Inc. | Hetero-epitaxial growth of non-lattice matched semiconductors |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS63156372A (en) * | 1986-12-19 | 1988-06-29 | Nippon Telegr & Teleph Corp <Ntt> | Semiconductor device |
-
1988
- 1988-11-18 JP JP63293418A patent/JPH0793449B2/en not_active Expired - Lifetime
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS63156372A (en) * | 1986-12-19 | 1988-06-29 | Nippon Telegr & Teleph Corp <Ntt> | Semiconductor device |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5356509A (en) * | 1992-10-16 | 1994-10-18 | Astropower, Inc. | Hetero-epitaxial growth of non-lattice matched semiconductors |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0793449B2 (en) | 1995-10-09 |
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