JPH02138918U - - Google Patents
Info
- Publication number
- JPH02138918U JPH02138918U JP4714189U JP4714189U JPH02138918U JP H02138918 U JPH02138918 U JP H02138918U JP 4714189 U JP4714189 U JP 4714189U JP 4714189 U JP4714189 U JP 4714189U JP H02138918 U JPH02138918 U JP H02138918U
- Authority
- JP
- Japan
- Prior art keywords
- high frequency
- gate
- dual gate
- control voltage
- gain control
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 230000009977 dual effect Effects 0.000 claims description 4
- 230000003321 amplification Effects 0.000 claims description 3
- 238000003199 nucleic acid amplification method Methods 0.000 claims description 3
- 238000010586 diagram Methods 0.000 description 3
- 239000003990 capacitor Substances 0.000 description 1
Landscapes
- Amplifiers (AREA)
- Control Of Amplification And Gain Control (AREA)
Description
第１図はこの考案の一実施例の構成を示す回路
図、第２図は同実施例のソースと接地間のインピ
ーダンスのＡＧＣ電圧による変化を示すグラフ、
第３図は同実施例と従来例のＡＧＣ特性を比較す
るためのグラフ、第４図および第５図はこの考案
の他の実施例の構成を示す回路図、第６図は従来
の高周波増幅回路の構成を示す回路図、第７図は
従来の高周波増幅回路のＡＧＣ特性を示すグラフ
、第８図は従来の高周波増幅回路のソース容量と
最大減衰量との関係を示すグラフ、第９図はソー
ス容量の変化に伴うＡＧＣ特性の変化を示すグラ
フである。
２……デユアル・ゲートＦＥＴ、７，９……コ
ンデンサ、８……可変容量ダイオード（可変容量
手段）、１０，１１，１３，１５……給電抵抗。
FIG. 1 is a circuit diagram showing the configuration of an embodiment of this invention, and FIG. 2 is a graph showing changes in impedance between the source and ground of the same embodiment depending on the AGC voltage.
Figure 3 is a graph for comparing the AGC characteristics of the same embodiment and the conventional example, Figures 4 and 5 are circuit diagrams showing the configuration of other embodiments of this invention, and Figure 6 is a conventional high frequency amplification. A circuit diagram showing the configuration of the circuit, Fig. 7 is a graph showing the AGC characteristics of a conventional high frequency amplifier circuit, Fig. 8 is a graph showing the relationship between the source capacitance and maximum attenuation of the conventional high frequency amplifier circuit, and Fig. 9 is a graph showing changes in AGC characteristics due to changes in source capacitance. 2... Dual gate FET, 7, 9... Capacitor, 8... Variable capacitance diode (variable capacitance means), 10, 11, 13, 15... Power supply resistor.
Claims (1)
ＥＴの第１のゲートに入力信号が供給され、第２
のゲートに利得制御電圧が供給されて、利得が制
御される高周波増幅回路において、 前記デユアル・ゲートＦＥＴのソースと接地間
に、前記利得制御電圧に応じて容量が変化する可
変容量手段を設けたことを特徴とする高周波増幅
回路。[Claims for Utility Model Registration] Dual gate F used as an amplification element
An input signal is provided to a first gate of the ET, and a second
In a high frequency amplifier circuit whose gain is controlled by supplying a gain control voltage to the gate of the dual gate FET, a variable capacitance means whose capacitance changes according to the gain control voltage is provided between the source of the dual gate FET and ground. A high frequency amplification circuit characterized by:
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP4714189U JPH02138918U (en) | 1989-04-21 | 1989-04-21 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP4714189U JPH02138918U (en) | 1989-04-21 | 1989-04-21 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH02138918U true JPH02138918U (en) | 1990-11-20 |
Family
ID=31562818
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP4714189U Pending JPH02138918U (en) | 1989-04-21 | 1989-04-21 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH02138918U (en) |
-
1989
- 1989-04-21 JP JP4714189U patent/JPH02138918U/ja active Pending