JPH02138857A - Gas sensor - Google Patents
Gas sensorInfo
- Publication number
- JPH02138857A JPH02138857A JP63292037A JP29203788A JPH02138857A JP H02138857 A JPH02138857 A JP H02138857A JP 63292037 A JP63292037 A JP 63292037A JP 29203788 A JP29203788 A JP 29203788A JP H02138857 A JPH02138857 A JP H02138857A
- Authority
- JP
- Japan
- Prior art keywords
- regions
- gate
- electrodes
- electrode
- constitution
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 229910052751 metal Inorganic materials 0.000 claims abstract description 9
- 239000002184 metal Substances 0.000 claims abstract description 9
- 239000007784 solid electrolyte Substances 0.000 claims abstract description 6
- 230000005669 field effect Effects 0.000 claims description 4
- 239000007788 liquid Substances 0.000 claims description 3
- 239000004020 conductor Substances 0.000 claims 2
- 239000003792 electrolyte Substances 0.000 abstract description 5
- 150000002739 metals Chemical class 0.000 abstract description 4
- 239000000758 substrate Substances 0.000 abstract description 3
- 238000010276 construction Methods 0.000 abstract 1
- 239000010410 layer Substances 0.000 abstract 1
- 238000000034 method Methods 0.000 abstract 1
- 239000002344 surface layer Substances 0.000 abstract 1
- 239000007789 gas Substances 0.000 description 9
- 229910052737 gold Inorganic materials 0.000 description 9
- 239000010931 gold Substances 0.000 description 9
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 8
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 8
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 5
- 239000001301 oxygen Substances 0.000 description 5
- 229910052760 oxygen Inorganic materials 0.000 description 5
- 239000004372 Polyvinyl alcohol Substances 0.000 description 4
- 239000012528 membrane Substances 0.000 description 4
- 229910052697 platinum Inorganic materials 0.000 description 4
- 229920002451 polyvinyl alcohol Polymers 0.000 description 4
- MYMOFIZGZYHOMD-UHFFFAOYSA-N Dioxygen Chemical compound O=O MYMOFIZGZYHOMD-UHFFFAOYSA-N 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 229910001882 dioxygen Inorganic materials 0.000 description 3
- 229920000642 polymer Polymers 0.000 description 2
- 150000002343 gold Chemical class 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 238000002955 isolation Methods 0.000 description 1
- 239000008363 phosphate buffer Substances 0.000 description 1
- 229920005597 polymer membrane Polymers 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 239000002699 waste material Substances 0.000 description 1
Landscapes
- Investigating Or Analyzing Materials By The Use Of Electric Means (AREA)
- Separation Using Semi-Permeable Membranes (AREA)
Abstract
Description
【発明の詳細な説明】
本発明はガスセンサの構造に関するものである。従来の
イオン感応電界効果型トランジスタ（以下ｌ５ＦＥＴ）
を用いたガスセンサを第１図に示す。ガス透過性膜Ｆで
隔てた中にＰ Ｈ一定の内部液ＰＶＡを保持しこの中に
ｌ５ＦＥＴと作用電極Ｗを配置した。ここで内部液のＰ
Ｈが一定という条件下では、ｌ５ＦＥＴのゲートＧは
絶縁物の基準電極とみなせると同時にｌ５ＦＥＴ自身は
インピーダンス変換器として動作している。このように
ｌ５ＦＥＴ単体で構成されているので、ｌ５ＦＥＴの温
度による特性変動の影響を直接受ける。DETAILED DESCRIPTION OF THE INVENTION The present invention relates to the structure of a gas sensor. Conventional ion-sensitive field effect transistor (hereinafter referred to as 15FET)
Fig. 1 shows a gas sensor using a gas sensor. An internal liquid PVA having a constant pH was held in a chamber separated by a gas-permeable membrane F, and an 15FET and a working electrode W were placed therein. Here, P of the internal liquid
Under the condition that H is constant, the gate G of the 15FET can be regarded as an insulating reference electrode, and at the same time, the 15FET itself operates as an impedance converter. Since it is composed of a single 15FET in this way, it is directly affected by the characteristic variation due to temperature of the 15FET.
また作用電極Ｗは検知しようとするガス以外にも感応す
るのでさまざまな対策が提案されているが、十分な解決
にはなっていない。Further, since the working electrode W is sensitive to gases other than the gas to be detected, various countermeasures have been proposed, but none have provided a sufficient solution.
本発明は上記ガスセンサの温度による変動を低減させる
と共にガスの選択性を向」ニしようとするものである。The present invention aims to reduce temperature-related fluctuations in the gas sensor and improve gas selectivity.
さらに、出力信号を安定に取り出すことを容易に行なう
ことを目的としている。Furthermore, it is an object of the present invention to easily extract an output signal stably.
本発明はＴＳＦＥＴを用いたボテンシオメトリによる酸
素センシングで、作用電極の種類にょって応答が違うと
いう事実にもとずいている。第２図（ａ）（ｂ）は本発
明の詳細な説明する作用電極として白金と金をもちいた
場合の酸素分圧に対するセンサの出力電圧を示している
。金電極の場合（ｂ）図のほうが出力電圧が大きい。し
たがって、この金電極と白金電極（ａ）図との差をとれ
ば十分な出力電圧が得られる。この差動の出力電圧は２
つのｌ５ＦＥＴのゲート膜上に別々の金属を付けた構成
で、ソースフォロワ回路による２つのｌ５ＦＥＴのソー
ス電圧の差で出力することができる。The present invention is based on the fact that the response differs depending on the type of working electrode in potentiometric oxygen sensing using a TSFET. FIGS. 2(a) and 2(b) show the output voltage of the sensor with respect to the oxygen partial pressure when platinum and gold are used as working electrodes to explain the present invention in detail. In the case of gold electrodes, the output voltage is higher in figure (b). Therefore, a sufficient output voltage can be obtained by taking the difference between this gold electrode and the platinum electrode (a). The output voltage of this differential is 2
With a configuration in which different metals are attached on the gate films of two 15FETs, output can be generated by the difference in source voltage of the two 15FETs using a source follower circuit.
第３図は本発明の一実施例構造を示す断面図で、１は半
導体（Ｓｉ）基板、２．２′は分離領域、３．３′はソ
ース領域、４．４′はドレイン領域５は絶縁膜（ゲート
膜）、Ｇ１はゲート電極（金）、Ｇ２はゲ−１・電極（
白金）、６は基準電極（金）、７は高分子ゲル（電解質
）、Ｆはガス透過性膜である。即ちこの構成例によれば
２つの同じ特性のＦＥＴ、、ＦＥＴ、のゲート膜５上に
作用電極として」二記の金Ｇ１と白金０２をそれぞれ被
着する。また、基準電極６として金電極を」−記の２つ
のゲ−１・金属Ｇ１、Ｇ２の近傍に配線する。そして、
これらの３電極を電解質７で覆い、この上をカス透過膜
Ｆで覆うことで酸素ガスセンサが構成できる。電解質７
としてはポリビニールアルコルをリン酸緩衝液に溶かし
た高分子ゲルＰＶＡを用いた。この構成で酸素ガスがカ
ス透過性膜Ｆを通って２つのゲ−１・電極Ｇ、、Ｇ、と
基準極６に吸着するとそれぞれに電位変化が起きる。そ
こで回路構成を′ソースフォロワの差動回路とすると、
２つのゲ−１・電極Ｇ１、Ｇ２の電位変化量には差があ
るので、ソースＳ１とソースＳ、の間の電圧差は酸素ガ
スの濃度変化を表わすことができる。FIG. 3 is a cross-sectional view showing the structure of an embodiment of the present invention, in which 1 is a semiconductor (Si) substrate, 2.2' is an isolation region, 3.3' is a source region, and 4.4' is a drain region 5. Insulating film (gate film), G1 is gate electrode (gold), G2 is gate electrode (gold),
6 is a reference electrode (gold), 7 is a polymer gel (electrolyte), and F is a gas permeable membrane. That is, according to this configuration example, gold G1 and platinum 02 are respectively deposited as working electrodes on the gate films 5 of two FETs having the same characteristics. Further, a gold electrode as a reference electrode 6 is wired near the two metals G1 and G2 shown in "-". and,
An oxygen gas sensor can be constructed by covering these three electrodes with an electrolyte 7 and covering this with a waste permeable membrane F. electrolyte 7
A polymer gel PVA prepared by dissolving polyvinyl alcohol in a phosphate buffer was used. With this configuration, when oxygen gas passes through the scum-permeable membrane F and is adsorbed to the two gate electrodes G, , G and the reference electrode 6, potential changes occur in each of them. Therefore, if the circuit configuration is a source follower differential circuit,
Since there is a difference in the amount of potential change between the two gate electrodes G1 and G2, the voltage difference between the source S1 and the source S can represent a change in the concentration of oxygen gas.
第４図は本発明の他の実施例構造図で、この構成は」１
記ポリビニールアルコールを溶かしたような高分子膜で
はなく固体電解質８を用いたものである。２つのゲート
電極金属と基準電極となる金属を覆うように固体電解質
８を被着する構造のセンサである。固体電解質を用いる
ことにより長寿命の酸素センサが実現できる。FIG. 4 is a structural diagram of another embodiment of the present invention, and this configuration is "1".
A solid electrolyte 8 is used instead of a polymer membrane in which polyvinyl alcohol is dissolved. This sensor has a structure in which a solid electrolyte 8 is deposited to cover two gate electrode metals and a reference electrode metal. By using a solid electrolyte, a long-life oxygen sensor can be realized.
以上の説明から明らかなように本発明のセンサの構造は
、ｌ５ＦＥＴの温度に対する特性変動をキャンセルする
ことができるし、外部ノイズに対しても影響を受けにく
い。また電解質層を薄くすることによりガスの透過が素
早く行われるのでセンサの応答を早くすることができる
。又、ＩＣ技術を用いることにより小型がしやすく量産
に富み安価に生産できるのでその効果は大である。As is clear from the above description, the structure of the sensor of the present invention can cancel the temperature-related characteristic fluctuations of the 15FET, and is less susceptible to external noise. Furthermore, by making the electrolyte layer thinner, gas permeation occurs quickly, so the response of the sensor can be made faster. Furthermore, by using IC technology, it is easy to downsize, mass-produce, and can be produced at low cost, which is very effective.
固体電解質、Ｇ１．Ｇ２はゲ ソース電極である。Solid electrolyte, G1. G2 is game This is the source electrode.
ト電極、Ｓ Ｓ２はelectrode, S S2 is
第１図は従来のｌ５ＦＥＴを用いたボテンシオメトリー
による酸素センサの構成図である。
第２図は本発明の詳細な説明する作用電極として白金と
金を用いた場合の酸素分圧に対するセンサの出力電圧特
性図。FIG. 1 is a block diagram of a conventional botensiometry oxygen sensor using an 15FET. FIG. 2 is an output voltage characteristic diagram of a sensor with respect to oxygen partial pressure when platinum and gold are used as working electrodes to explain the present invention in detail.
Claims (2)
にし、それぞれのソース電位の差を取り出す構成のＭＯ
Ｓ型電界効果トランジスタを用いたガスセンサにおいて
、上記ＭＯＳ型電界効果トランジスタのそれぞれのゲー
ト膜上に異種の金属を被着し、さらに、基準極とする金
属を上記ゲート部の近傍に配置し、上記の３つの金属電
極を固体電解質や液体膜などの導電体で被覆するように
構成することを特徴とするガスセンサ。(1) A MO with a configuration in which two MOS field effect transistors are configured in a differential configuration and the difference in their source potentials is taken out.
In a gas sensor using an S-type field effect transistor, a different type of metal is deposited on each gate film of the MOS-type field effect transistor, further, a metal to be used as a reference electrode is arranged near the gate part, and the above-mentioned A gas sensor characterized in that three metal electrodes are covered with a conductor such as a solid electrolyte or a liquid film.
する特許請求の範囲第（１）項記載のガスセンサ。(2) The gas sensor according to claim (1), characterized in that the conductor is covered with a gas permeable film.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP29203788A JP3167022B2 (en) | 1988-11-18 | 1988-11-18 | Gas sensor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP29203788A JP3167022B2 (en) | 1988-11-18 | 1988-11-18 | Gas sensor |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH02138857A true JPH02138857A (en) | 1990-05-28 |
| JP3167022B2 JP3167022B2 (en) | 2001-05-14 |
Family
ID=17776713
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP29203788A Expired - Fee Related JP3167022B2 (en) | 1988-11-18 | 1988-11-18 | Gas sensor |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP3167022B2 (en) |
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2005209369A (en) * | 2004-01-20 | 2005-08-04 | Matsushita Electric Ind Co Ltd | Battery pack |
| DE102005046944A1 (en) * | 2005-09-30 | 2007-04-05 | Micronas Gmbh | Gas-sensitive field-effect transistor for the detection of chlorine |
| EP1079229B1 (en) * | 1998-07-27 | 2007-10-24 | General Electric Company | Gas sensor with protective gate, method of forming the sensor, and method of sensing |
| WO2013105449A1 (en) * | 2012-01-13 | 2013-07-18 | 国立大学法人東京大学 | Gas sensor |
| US9546948B2 (en) | 2012-01-13 | 2017-01-17 | The University Of Tokyo | Gas sensor |
| CN111735859A (en) * | 2020-08-21 | 2020-10-02 | 深圳第三代半导体研究院 | GaN-based gas sensor and preparation method thereof |
-
1988
- 1988-11-18 JP JP29203788A patent/JP3167022B2/en not_active Expired - Fee Related
Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP1079229B1 (en) * | 1998-07-27 | 2007-10-24 | General Electric Company | Gas sensor with protective gate, method of forming the sensor, and method of sensing |
| JP2005209369A (en) * | 2004-01-20 | 2005-08-04 | Matsushita Electric Ind Co Ltd | Battery pack |
| DE102005046944A1 (en) * | 2005-09-30 | 2007-04-05 | Micronas Gmbh | Gas-sensitive field-effect transistor for the detection of chlorine |
| WO2013105449A1 (en) * | 2012-01-13 | 2013-07-18 | 国立大学法人東京大学 | Gas sensor |
| US9250210B2 (en) | 2012-01-13 | 2016-02-02 | The University Of Tokyo | Gas sensor |
| US9546948B2 (en) | 2012-01-13 | 2017-01-17 | The University Of Tokyo | Gas sensor |
| CN111735859A (en) * | 2020-08-21 | 2020-10-02 | 深圳第三代半导体研究院 | GaN-based gas sensor and preparation method thereof |
| CN111735859B (en) * | 2020-08-21 | 2021-07-20 | 深圳第三代半导体研究院 | GaN-based gas sensor and preparation method thereof |
Also Published As
| Publication number | Publication date |
|---|---|
| JP3167022B2 (en) | 2001-05-14 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| LAPS | Cancellation because of no payment of annual fees |