JPH02138429U - - Google Patents

Info

Publication number

JPH02138429U

JPH02138429U JP4710589U JP4710589U JPH02138429U JP H02138429 U JPH02138429 U JP H02138429U JP 4710589 U JP4710589 U JP 4710589U JP 4710589 U JP4710589 U JP 4710589U JP H02138429 U JPH02138429 U JP H02138429U

Authority

JP

Japan

Prior art keywords

insulating film

wiring

polycrystalline silicon

lead

path

Prior art date

1989-04-20

Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)

Granted

Links

• Espacenet
• Global Dossier
• Discuss

• 239000004065 semiconductor Substances 0.000 claims description 6
• 239000010410 layer Substances 0.000 claims description 4
• 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 4
• 239000011229 interlayer Substances 0.000 claims description 3
• 239000000758 substrate Substances 0.000 claims description 3
• XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
• 230000001681 protective effect Effects 0.000 description 1
• 229910052710 silicon Inorganic materials 0.000 description 1
• 239000010703 silicon Substances 0.000 description 1