JPH0213372B2 - - Google Patents
Info
- Publication number
- JPH0213372B2 JPH0213372B2 JP55168277A JP16827780A JPH0213372B2 JP H0213372 B2 JPH0213372 B2 JP H0213372B2 JP 55168277 A JP55168277 A JP 55168277A JP 16827780 A JP16827780 A JP 16827780A JP H0213372 B2 JPH0213372 B2 JP H0213372B2
- Authority
- JP
- Japan
- Prior art keywords
- semiconductor laser
- laser
- recording
- output
- optical
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 239000004065 semiconductor Substances 0.000 claims description 24
- 230000003287 optical effect Effects 0.000 claims description 21
- 238000001514 detection method Methods 0.000 claims description 6
- 238000000034 method Methods 0.000 claims description 6
- 230000002123 temporal effect Effects 0.000 claims description 2
- 230000001678 irradiating effect Effects 0.000 claims 1
- 229910052751 metal Inorganic materials 0.000 description 7
- 239000002184 metal Substances 0.000 description 7
- 239000010409 thin film Substances 0.000 description 6
- 238000010168 coupling process Methods 0.000 description 5
- 238000005859 coupling reaction Methods 0.000 description 5
- 230000000694 effects Effects 0.000 description 5
- 239000010408 film Substances 0.000 description 4
- 230000007423 decrease Effects 0.000 description 3
- 230000008878 coupling Effects 0.000 description 2
- 230000001681 protective effect Effects 0.000 description 2
- 239000004925 Acrylic resin Substances 0.000 description 1
- 229920000178 Acrylic resin Polymers 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000005553 drilling Methods 0.000 description 1
- 238000004049 embossing Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 230000010355 oscillation Effects 0.000 description 1
- 230000010287 polarization Effects 0.000 description 1
- 230000002250 progressing effect Effects 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
- 229910052714 tellurium Inorganic materials 0.000 description 1
- PORWMNRCUJJQNO-UHFFFAOYSA-N tellurium atom Chemical compound [Te] PORWMNRCUJJQNO-UHFFFAOYSA-N 0.000 description 1
- 239000012780 transparent material Substances 0.000 description 1
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B7/00—Recording or reproducing by optical means, e.g. recording using a thermal beam of optical radiation by modifying optical properties or the physical structure, reproducing using an optical beam at lower power by sensing optical properties; Record carriers therefor
- G11B7/12—Heads, e.g. forming of the optical beam spot or modulation of the optical beam
- G11B7/125—Optical beam sources therefor, e.g. laser control circuitry specially adapted for optical storage devices; Modulators, e.g. means for controlling the size or intensity of optical spots or optical traces
- G11B7/126—Circuits, methods or arrangements for laser control or stabilisation
Landscapes
- Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Optical Recording Or Reproduction (AREA)
- Optical Head (AREA)
- Semiconductor Lasers (AREA)
Description
【発明の詳細な説明】
本発明は、半導体レーザを用いて金属薄膜等に
穴をあけて記録を行なうレーザ光による記録方法
に関するものである。DETAILED DESCRIPTION OF THE INVENTION The present invention relates to a recording method using a laser beam, which performs recording by drilling a hole in a metal thin film or the like using a semiconductor laser.
最近、光ビデオデイスクにより情報を高密度・
低コストに記録し、再生する方法が注目されてい
る。特に、光ヘツドの小型軽量化を進めるために
半導体レーザを利用する技術が進展しつつある。
その一例として、従来、半導体レーザの自己結合
効果を利用したスクープ（SCOOP＝Self
Coupled Optical Pickup）方式と呼ばれる小型
の光ビデオデイスク再生専用の光ヘツドが知られ
ている。すなわち、第１図に示すように型押し複
数によつて作成された光デイスク１はアルミニウ
ムの反射膜２に形成されたビツトと呼ばれる凹凸
パターン３上にアクリル樹脂等の透明部材による
保護膜４を設けてなる。そして、半導体レーザ５
から出たレーザ光６はカツプリングレンズ７、1/
４波長板８、集光レンズ９を通して凹凸パターン
３上に集光されるが、反射膜２により反射されて
逆の光路を通つて半導体レーザ５に帰還される。
ここで、1/4波長板８は帰還光の偏光を出射光に
対して直交させて光干渉効果によるノイズを低減
させるためのものであつて、必ずしも必要ではな
い。また、半導体レーザ５には保護抵抗１０を通
して電源１１によりレーザ発振に必要な直流の順
方向電流が流れている。このような構成により、
光デイスク１からの反射光がある場合とない場合
とでは第２図に示すレーザ光出力−順方向電流特
性のようにレーザ光出力が変化することになる。
この図において、曲線Ａは反射光がある場合を示
し、曲線Ｂは反射光がない場合を示す。したがつ
て、レーザ光出力としての半導体レーザ５後方へ
の出力１２を光検出器１３で検出すれば、その検
出信号１４に基づき光デイスク１上のビツトの有
無をピツクアツプすることができるものである。
ところが、この方式は再生のみ可能であり、記録
すべき機能は有していないものである。 Recently, optical video disks have been used to store information at high density.
Low-cost recording and playback methods are attracting attention. In particular, technology using semiconductor lasers is progressing in order to make optical heads smaller and lighter.
As an example, conventional scoops (SCOOP=Self) that utilize the self-coupling effect of semiconductor lasers are
A small optical head dedicated to playing back optical video disks called the Coupled Optical Pickup system is known. That is, as shown in FIG. 1, an optical disk 1 made by multiple embossing is coated with a protective film 4 made of a transparent material such as acrylic resin on a concavo-convex pattern 3 called a bit formed on an aluminum reflective film 2. It will be set up. And the semiconductor laser 5
The laser beam 6 emitted from the coupling lens 7, 1/
The light is focused on the concavo-convex pattern 3 through the four-wavelength plate 8 and the condensing lens 9, but is reflected by the reflective film 2 and returned to the semiconductor laser 5 through the opposite optical path.
Here, the 1/4 wavelength plate 8 is for making the polarization of the feedback light orthogonal to the emitted light to reduce noise due to the optical interference effect, and is not necessarily necessary. Further, a forward direct current necessary for laser oscillation flows through the semiconductor laser 5 from a power source 11 through a protective resistor 10. With such a configuration,
The laser light output changes as shown in the laser light output-forward current characteristic shown in FIG. 2, depending on whether there is reflected light from the optical disk 1 or not.
In this figure, curve A shows the case where there is reflected light, and curve B shows the case where there is no reflected light. Therefore, if the output 12 to the rear of the semiconductor laser 5 as a laser light output is detected by the photodetector 13, the presence or absence of a bit on the optical disk 1 can be picked up based on the detection signal 14. .
However, this method is only capable of reproduction and does not have a recording function.
本発明は、このような点に鑑みなされたもの
で、半導体レーザの自己結合効果を利用して光記
録を安定して行なうことができるレーザ光による
記録方法を得ることを目的とするものである。 The present invention was made in view of the above points, and an object of the present invention is to obtain a recording method using a laser beam that can stably perform optical recording by utilizing the self-coupling effect of a semiconductor laser. .
本発明の一実施例を第３図および第４図に基づ
いて説明する。第１図および第２図で示した部分
と同一部分は同一符号を用い説明も省略する。光
デイスク１の位置にはガラス、プラスチツク等の
基板１５にテルル等の金属薄膜１６を設けてある
記録媒体としての光デイスク１７が設けられてい
る。この光デイスク１７はレーザ光６の照射によ
つて穴が形成されたものである。そして、半導体
レーザ５から出たレーザ光６はカツプリングレン
ズ７、1/4波長板８、集光レンズ９を通つて金属
薄膜１６上に集光照射され、一部は吸収されて金
属薄膜１６を昇温し、一部は反射されて逆の光路
を通つて半導体レーザ５に帰還されるように光学
系が調整されている。ここで、半導体レーザ５は
電源１８により第４図ａに示すように情報に従つ
た変調電流で変調されており、光デイスク１７が
所定速度で動いている状態で半導体レーザ５の出
力光１２をPINダイオード等の光検出器１３で検
出し、その検出信号１４を観測すると、第４図ｂ
に示すように半導体レーザ５の出力光１２の変化
を検出することができる。ここで、半導体レーザ
５の出力光１２の出力およびパルス幅は、もちろ
ん、金属薄膜１６に穴を形成しうるように設定さ
れている。今、金属薄膜１６に穴１９を形成する
過程に注目してみると、レーザ光６が照射され始
めてから穴１９が形成され始めるまでは金属薄膜
１６が一定の反射率を有しているので、第２図に
示したレーザ出力−順方向電流特性からわかるよ
うに、レーザ出力は第４図ｂ中に符号イで示すよ
うに高く保たれるが、金属薄膜１６に穴１９が形
成され始めると反射率が減少し、それに従つてレ
ーザ出力も第４図ｂ中に符号ロで示すように減少
する。したがつて、このレーザ出力の変化を検出
することにより、穴１９が形成された、すなわち
記録が行なわれたことを確認することができるこ
ととなり、記録の誤まりの訂正を行なうことも可
能となる。また、穴１９のあき具合も判定できる
のでレーザ光の出力を最適とするように自動制御
もできる。さらに、穴１９が形成され始めるとレ
ーザ出力が低下することから、過大な出力による
半導体レーザ５の破壊を防止でき、半導体レーザ
５の保護も図れる。 An embodiment of the present invention will be described based on FIGS. 3 and 4. Components that are the same as those shown in FIGS. 1 and 2 are designated by the same reference numerals, and description thereof will be omitted. At the position of the optical disk 1, there is provided an optical disk 17 as a recording medium, which has a substrate 15 made of glass, plastic, etc. and a thin metal film 16 made of tellurium or the like provided thereon. This optical disk 17 has holes formed by irradiation with the laser beam 6. The laser beam 6 emitted from the semiconductor laser 5 passes through a coupling lens 7, a quarter-wave plate 8, and a condensing lens 9, and is condensed and irradiated onto the metal thin film 16, and a part of it is absorbed and the metal thin film 16 The optical system is adjusted so that the temperature of the laser beam is increased and a portion of the laser beam is reflected and returned to the semiconductor laser 5 through the opposite optical path. Here, the semiconductor laser 5 is modulated by a power supply 18 with a modulation current according to information as shown in FIG. 4a, and the output light 12 of the semiconductor laser 5 is When detected by a photodetector 13 such as a PIN diode and the detection signal 14 is observed, the result is shown in Fig. 4b.
As shown in FIG. 2, changes in the output light 12 of the semiconductor laser 5 can be detected. Here, the output and pulse width of the output light 12 of the semiconductor laser 5 are of course set so as to form a hole in the metal thin film 16. Now, if we pay attention to the process of forming the holes 19 in the metal thin film 16, the metal thin film 16 has a constant reflectance from the time the laser beam 6 begins to be irradiated until the hole 19 begins to be formed. As can be seen from the laser output vs. forward current characteristics shown in FIG. 2, the laser output is kept high as indicated by the symbol A in FIG. As the reflectance decreases, the laser output also decreases accordingly, as indicated by the symbol ``b'' in FIG. 4b. Therefore, by detecting this change in laser output, it is possible to confirm that the hole 19 has been formed, that is, that recording has been performed, and it is also possible to correct recording errors. . Furthermore, since the degree of perforation of the hole 19 can also be determined, automatic control can be performed to optimize the output of the laser beam. Furthermore, since the laser output decreases when the hole 19 begins to be formed, it is possible to prevent the semiconductor laser 5 from being destroyed due to excessive output, and the semiconductor laser 5 can also be protected.
なお、この半導体レーザ５の第３に示した駆動
系を第１図に示すように切り換えれば、再生用と
して使用することも可能であり、全体として記
録・再生両用の光ヘツドとすることができる。 If the third drive system of this semiconductor laser 5 is switched as shown in FIG. 1, it can also be used for reproduction, and the whole can be used as an optical head for both recording and reproduction. can.
本発明は上述のように、半導体レーザを所定情
報に従つて電流変調しつつ記録媒体に照射し、こ
の記録媒体からの反射光を調整された光学系によ
り前記半導体レーザに帰還させ、この半導体レー
ザからの出力光を検出する検出器により情報を記
録する時に同時に得られる検出信号を検出し、こ
の検出信号の時間的変化に基づいて記録が行なわ
れたか否かを確認するようにしたので、半導体レ
ーザの自己結合効果を利用した光記録を安定して
行なうことができ、特に、記録が行なわれたこと
を確認することができるため、記録の誤りの訂正
を行なうこともできる等の効果を有する。 As described above, the present invention irradiates a recording medium with a semiconductor laser while modulating current according to predetermined information, and returns reflected light from the recording medium to the semiconductor laser using an adjusted optical system. A detector that detects output light from a semiconductor detects a detection signal that is obtained at the same time as information is recorded, and it is confirmed whether or not recording has been performed based on the temporal change in this detection signal. It is possible to stably perform optical recording using the self-coupling effect of a laser, and in particular, it is possible to confirm that recording has been performed, so it has the effect of being able to correct recording errors. .
第１図は従来例を示す概略的な側面図、第２図
はそのレーザ出力−順方向電流特性図、第３図は
本発明の一実施例を示す概略的な側面図、第４図
は波形図である。
５……半導体レーザ、１７……光デイスク（記
録媒体）。
FIG. 1 is a schematic side view showing a conventional example, FIG. 2 is a laser output-forward current characteristic diagram, FIG. 3 is a schematic side view showing an embodiment of the present invention, and FIG. 4 is a schematic side view showing a conventional example. FIG. 5... Semiconductor laser, 17... Optical disk (recording medium).
Claims (1)
つつ記録媒体に照射し、この記録媒体からの反射
光を調整された光学系により前記半導体レーザに
帰還させ、この半導体レーザからの出力光を検出
する検出器により情報を記録する時に同時に得ら
れる検出信号を検出し、この検出信号の時間的変
化に基づいて記録が行なわれたか否かを確認する
ようにしたことを特徴とするレーザ光による記録
方法。1. Irradiating a recording medium with a semiconductor laser while modulating current according to predetermined information, returning light reflected from the recording medium to the semiconductor laser using an adjusted optical system, and detecting output light from the semiconductor laser. A recording method using a laser beam, characterized in that a detection signal obtained at the same time as information is recorded by a detector is detected, and whether or not recording has been performed is confirmed based on a temporal change in this detection signal. .
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP55168277A JPS5792438A (en) | 1980-11-28 | 1980-11-28 | Recording method by laser beam |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP55168277A JPS5792438A (en) | 1980-11-28 | 1980-11-28 | Recording method by laser beam |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5792438A JPS5792438A (en) | 1982-06-09 |
| JPH0213372B2 true JPH0213372B2 (en) | 1990-04-04 |
Family
ID=15865029
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP55168277A Granted JPS5792438A (en) | 1980-11-28 | 1980-11-28 | Recording method by laser beam |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5792438A (en) |
Families Citing this family (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5961984A (en) * | 1982-09-30 | 1984-04-09 | Sharp Corp | Semiconductor laser device |
| JPS60145537A (en) * | 1984-01-10 | 1985-08-01 | Nec Corp | Optical information recording system and its device |
| JPH0460921A (en) * | 1990-06-27 | 1992-02-26 | Nippon Columbia Co Ltd | Optical recording and reproducing device |
| US5798993A (en) * | 1995-05-29 | 1998-08-25 | Nec Corporation | System and method for simultaneously verifying optical data writing and optical data writing medium for use therein |
| US6664526B2 (en) * | 2000-11-15 | 2003-12-16 | Ricoh Company, Ltd. | Optical information recording employing improved recording power control scheme |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5365116A (en) * | 1976-11-24 | 1978-06-10 | Tokyo Shibaura Electric Co | Serial printer |
| JPS5553776A (en) * | 1978-10-13 | 1980-04-19 | Nec Corp | Optical information reading method |
-
1980
- 1980-11-28 JP JP55168277A patent/JPS5792438A/en active Granted
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5365116A (en) * | 1976-11-24 | 1978-06-10 | Tokyo Shibaura Electric Co | Serial printer |
| JPS5553776A (en) * | 1978-10-13 | 1980-04-19 | Nec Corp | Optical information reading method |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS5792438A (en) | 1982-06-09 |
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