JPH02131550U - - Google Patents
Info
- Publication number
- JPH02131550U JPH02131550U JP3875789U JP3875789U JPH02131550U JP H02131550 U JPH02131550 U JP H02131550U JP 3875789 U JP3875789 U JP 3875789U JP 3875789 U JP3875789 U JP 3875789U JP H02131550 U JPH02131550 U JP H02131550U
- Authority
- JP
- Japan
- Prior art keywords
- electrode
- substrate
- intermediate plate
- gas
- film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000000758 substrate Substances 0.000 claims description 10
- 238000005268 plasma chemical vapour deposition Methods 0.000 claims description 5
- 238000007664 blowing Methods 0.000 claims description 4
- 238000010586 diagram Methods 0.000 description 4
Landscapes
- Chemical Vapour Deposition (AREA)
- Drying Of Semiconductors (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP3875789U JPH02131550U (zh) | 1989-03-31 | 1989-03-31 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP3875789U JPH02131550U (zh) | 1989-03-31 | 1989-03-31 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH02131550U true JPH02131550U (zh) | 1990-11-01 |
Family
ID=31547053
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP3875789U Pending JPH02131550U (zh) | 1989-03-31 | 1989-03-31 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH02131550U (zh) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2015019064A (ja) * | 2013-07-08 | 2015-01-29 | ラム リサーチ コーポレーションＬａｍ Ｒｅｓｅａｒｃｈ Ｃｏｒｐｏｒａｔｉｏｎ | イオンビームエッチングシステム |
| US10134605B2 (en) | 2013-07-11 | 2018-11-20 | Lam Research Corporation | Dual chamber plasma etcher with ion accelerator |
| US10224221B2 (en) | 2013-04-05 | 2019-03-05 | Lam Research Corporation | Internal plasma grid for semiconductor fabrication |
-
1989
- 1989-03-31 JP JP3875789U patent/JPH02131550U/ja active Pending
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US10224221B2 (en) | 2013-04-05 | 2019-03-05 | Lam Research Corporation | Internal plasma grid for semiconductor fabrication |
| US11171021B2 (en) | 2013-04-05 | 2021-11-09 | Lam Research Corporation | Internal plasma grid for semiconductor fabrication |
| JP2015019064A (ja) * | 2013-07-08 | 2015-01-29 | ラム リサーチ コーポレーションＬａｍ Ｒｅｓｅａｒｃｈ Ｃｏｒｐｏｒａｔｉｏｎ | イオンビームエッチングシステム |
| US10134605B2 (en) | 2013-07-11 | 2018-11-20 | Lam Research Corporation | Dual chamber plasma etcher with ion accelerator |