JPH02130819A - Vapor growth device - Google Patents
Vapor growth deviceInfo
- Publication number
- JPH02130819A JPH02130819A JP28503388A JP28503388A JPH02130819A JP H02130819 A JPH02130819 A JP H02130819A JP 28503388 A JP28503388 A JP 28503388A JP 28503388 A JP28503388 A JP 28503388A JP H02130819 A JPH02130819 A JP H02130819A
- Authority
- JP
- Japan
- Prior art keywords
- holding plate
- wafer holding
- wafer
- plate
- removable
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000007664 blowing Methods 0.000 claims description 9
- 238000001947 vapour-phase growth Methods 0.000 claims description 8
- 239000007789 gas Substances 0.000 claims description 7
- 239000012495 reaction gas Substances 0.000 claims description 3
- 239000000428 dust Substances 0.000 abstract description 3
- 238000004140 cleaning Methods 0.000 abstract description 2
- 239000007787 solid Substances 0.000 abstract 4
- 238000000034 method Methods 0.000 abstract 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000012808 vapor phase Substances 0.000 description 1
Abstract
Description
【発明の詳細な説明】
〔産業上の利用分野〕
本発明は気相成長装置に関し、特に常圧気相成長装置に
関する。DETAILED DESCRIPTION OF THE INVENTION [Industrial Field of Application] The present invention relates to a vapor phase growth apparatus, and particularly to an atmospheric pressure vapor growth apparatus.
従来、この種の気相成長装置は第2図(A)、 (B)
に示す様にウェハー1は連続的に移動するウェハー保持
板5に乗り、ガス吹き出し板4下で反応ガスにより気相
成長膜が付着する構造となっていた。Conventionally, this type of vapor phase growth apparatus is shown in Figures 2 (A) and (B).
As shown in FIG. 2, the wafer 1 was placed on a continuously moving wafer holding plate 5, and a vapor-phase grown film was attached to the wafer under the gas blowing plate 4 by the reaction gas.
上述した従来の気相成長装置は、反応性成膜がウェハー
だけではなくウェノ・−保持板にも付着するので、いず
れゴミとなってウェハーに付着する。In the conventional vapor phase growth apparatus described above, the reactive film adheres not only to the wafer but also to the wafer holding plate, so that it eventually becomes dust and adheres to the wafer.
その為に定期的にウェハー保持板を交換しなければなら
なくなるが、ウェハー保持板とガス吹き出し板のすき間
の位置決めには多大な時間を要するという欠点がある。Therefore, the wafer holding plate must be replaced periodically, but there is a drawback that it takes a lot of time to position the gap between the wafer holding plate and the gas blowing plate.
本発明の気相成長装置は、反応ガスをウェハーに吹き付
ける為のガス吹き出し板と、ウェハーを保持しながら連
続的に移動する多数のウェハー保持板を有する気相成長
装置において、前記ウェハー保持板がウェハーが乗る部
分の固定のウェハー保持板と、ウェハー周囲の部分を覆
い取りはずしのきくウェハー保持板とに分割される構造
を有することを特徴とする。The vapor phase growth apparatus of the present invention has a gas blowing plate for blowing a reaction gas onto the wafer, and a large number of wafer holding plates that move continuously while holding the wafer, wherein the wafer holding plate is It is characterized by having a structure that is divided into a fixed wafer holding plate on which the wafer rests, and a removable wafer holding plate that covers the area around the wafer.
次に、本発明について図面を参照して説明する。 Next, the present invention will be explained with reference to the drawings.
第1図(A)は本発明の一実施例の平面図、第1図(B
)は第1図(A)の縦断面図である。ウェハー1は固定
されたウェハー保持板2に乗り、その外周は取りはずし
のきくウェハー保持板3で覆い、ガス吹き出し板4下で
気相成長させる様にし、ゴミは取りはずしのきくウェハ
ー保持板3のみに付着する。取りはずしのきくウェハー
保持板のみを定期的に交換する様にし固定のウェハー保
持板はそのままとする。FIG. 1(A) is a plan view of one embodiment of the present invention, and FIG. 1(B) is a plan view of an embodiment of the present invention.
) is a vertical sectional view of FIG. 1(A). The wafer 1 is mounted on a fixed wafer holding plate 2, its outer periphery is covered with a removable wafer holding plate 3, and vapor phase growth is performed under the gas blowing plate 4, so that dust is only stored on the removable wafer holding plate 3. adhere to. Only the removable wafer holding plates should be replaced periodically, and the fixed wafer holding plates should be left as they are.
以上説明した様に本発明は、取りはずしのきくウェハー
保持板と固定のウェハー保持板とに分割することにより
、定期的に清掃の為にウェハー保持板を取りはずすこと
がなくなり、ウェハー保持板とガス吹き出し板の高さを
調整することもなくなり装置を連続的に稼働させること
が出来る。As explained above, by dividing the wafer holding plate into a removable wafer holding plate and a fixed wafer holding plate, it is no longer necessary to remove the wafer holding plate periodically for cleaning, and the wafer holding plate and gas blowing There is no need to adjust the height of the plate, and the device can be operated continuously.
【図面の簡単な説明】
第1図(A)は本発明の一実施例平面図、第1図(B)
は第1図(A)の縦断面図、第2図(A)は従来の気相
成長装置の平面図、第2図(B)は第2図(A)の縦断
面図である。
1・・・・・・ウェハー 2・・・・・・固定のウェハ
ー保持板、3・・・・・・取りはずしのきくウェハー保
持板、4・・・・・・反応ガス吹き出し坂、5・・・・
・・ウェハー保持板。
代理人 弁理士 内 原 晋[Brief Description of the Drawings] Figure 1 (A) is a plan view of an embodiment of the present invention, Figure 1 (B)
1A is a longitudinal sectional view of FIG. 1(A), FIG. 2(A) is a plan view of a conventional vapor phase growth apparatus, and FIG. 2(B) is a longitudinal sectional view of FIG. 2(A). 1...Wafer 2...Fixed wafer holding plate, 3...Removable wafer holding plate, 4...Reactive gas blowing slope, 5...・・・
...Wafer holding plate. Agent Patent Attorney Susumu Uchihara
Claims (1)
、ウェハーを保持しながら連続的に移動する多数のウェ
ハー保持板を有する気相成長装置に於いて、前記ウェハ
ー保持板がウェハーが乗る部分の固定のウェハー保持板
と、ウェハー周囲の部分を覆い取りはずしのきくウェハ
ー保持板とに分割される構造を有することを特徴とする
気相成長装置。In a vapor phase growth apparatus that has a gas blowing plate for blowing reaction gas onto the wafer and a large number of wafer holding plates that move continuously while holding the wafer, the wafer holding plate is used to fix the part on which the wafer is placed. A vapor phase growth apparatus characterized by having a structure that is divided into a wafer holding plate and a wafer holding plate that covers a portion around the wafer and cannot be removed.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP28503388A JPH02130819A (en) | 1988-11-10 | 1988-11-10 | Vapor growth device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP28503388A JPH02130819A (en) | 1988-11-10 | 1988-11-10 | Vapor growth device |
Publications (1)
Publication Number | Publication Date |
---|---|
JPH02130819A true JPH02130819A (en) | 1990-05-18 |
Family
ID=17686288
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP28503388A Pending JPH02130819A (en) | 1988-11-10 | 1988-11-10 | Vapor growth device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPH02130819A (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6044534A (en) * | 1995-12-07 | 2000-04-04 | Nec Corporation | Semiconductor device manufacturing machine and method for manufacturing a semiconductor device by using the same manufacturing machine |
-
1988
- 1988-11-10 JP JP28503388A patent/JPH02130819A/en active Pending
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6044534A (en) * | 1995-12-07 | 2000-04-04 | Nec Corporation | Semiconductor device manufacturing machine and method for manufacturing a semiconductor device by using the same manufacturing machine |
US6225233B1 (en) | 1995-12-07 | 2001-05-01 | Nec Corporation | Semiconductor device manufacturing machine and method for manufacturing a semiconductor device by using THE same manufacturing machine |
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