JPH02124655U - - Google Patents
Info
- Publication number
- JPH02124655U JPH02124655U JP3382189U JP3382189U JPH02124655U JP H02124655 U JPH02124655 U JP H02124655U JP 3382189 U JP3382189 U JP 3382189U JP 3382189 U JP3382189 U JP 3382189U JP H02124655 U JPH02124655 U JP H02124655U
- Authority
- JP
- Japan
- Prior art keywords
- semiconductor substrate
- implantation
- rays generated
- impurities
- value
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000002513 implantation Methods 0.000 claims 2
- 239000012535 impurity Substances 0.000 claims 2
- 239000004065 semiconductor Substances 0.000 claims 2
- 239000000758 substrate Substances 0.000 claims 2
- 239000007943 implant Substances 0.000 claims 1
- 238000005468 ion implantation Methods 0.000 claims 1
- 238000010586 diagram Methods 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
Landscapes
- Electron Sources, Ion Sources (AREA)
Description
第1図は本考案の一実施例の概略構成図である
。 1……X線発生源、2……X線検出器、3……
インターロツク回路、4……注入制御部。
。 1……X線発生源、2……X線検出器、3……
インターロツク回路、4……注入制御部。
Claims (1)
- 半導体基板に不純物の注入処理を行なうイオン
注入装置において、前記不純物の衝突により発生
するX線をしやへいするしやへい板の外側にX線
検出器を設け、X線の発生量がある一定の値以上
になると注入制御部に対して注入処理停止信号を
出すインターロツク回路を有することを特徴とす
る半導体基板イオン注入装置。
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP3382189U JPH02124655U (ja) | 1989-03-24 | 1989-03-24 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP3382189U JPH02124655U (ja) | 1989-03-24 | 1989-03-24 |
Publications (1)
Publication Number | Publication Date |
---|---|
JPH02124655U true JPH02124655U (ja) | 1990-10-15 |
Family
ID=31537773
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP3382189U Pending JPH02124655U (ja) | 1989-03-24 | 1989-03-24 |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPH02124655U (ja) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH09110359A (ja) * | 1995-10-12 | 1997-04-28 | Hitachi Building Syst Co Ltd | 漏洩感知x線探傷装置 |
-
1989
- 1989-03-24 JP JP3382189U patent/JPH02124655U/ja active Pending
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH09110359A (ja) * | 1995-10-12 | 1997-04-28 | Hitachi Building Syst Co Ltd | 漏洩感知x線探傷装置 |
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