JPH021231B2 - - Google Patents
Info
- Publication number
- JPH021231B2 JPH021231B2 JP55090879A JP9087980A JPH021231B2 JP H021231 B2 JPH021231 B2 JP H021231B2 JP 55090879 A JP55090879 A JP 55090879A JP 9087980 A JP9087980 A JP 9087980A JP H021231 B2 JPH021231 B2 JP H021231B2
- Authority
- JP
- Japan
- Prior art keywords
- zinc oxide
- thin film
- substrate
- piezoelectric thin
- oxide piezoelectric
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 claims description 94
- 239000000758 substrate Substances 0.000 claims description 50
- 239000010409 thin film Substances 0.000 claims description 48
- 239000011787 zinc oxide Substances 0.000 claims description 47
- 238000000034 method Methods 0.000 claims description 22
- 230000015572 biosynthetic process Effects 0.000 claims description 17
- 238000004544 sputter deposition Methods 0.000 claims description 16
- 239000010408 film Substances 0.000 claims description 15
- 238000004519 manufacturing process Methods 0.000 claims description 12
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 claims description 10
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 8
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 8
- 239000013078 crystal Substances 0.000 claims description 8
- 239000001301 oxygen Substances 0.000 claims description 8
- 229910052760 oxygen Inorganic materials 0.000 claims description 8
- 238000000151 deposition Methods 0.000 claims description 6
- 230000008021 deposition Effects 0.000 claims description 6
- 229910052786 argon Inorganic materials 0.000 claims description 5
- 230000001747 exhibiting effect Effects 0.000 claims description 5
- 239000011521 glass Substances 0.000 claims description 5
- 229910052751 metal Inorganic materials 0.000 claims description 5
- 239000002184 metal Substances 0.000 claims description 5
- WHXSMMKQMYFTQS-UHFFFAOYSA-N Lithium Chemical compound [Li] WHXSMMKQMYFTQS-UHFFFAOYSA-N 0.000 claims description 4
- 229910052744 lithium Inorganic materials 0.000 claims description 4
- 239000010703 silicon Substances 0.000 claims description 4
- 229910052710 silicon Inorganic materials 0.000 claims description 4
- 235000012239 silicon dioxide Nutrition 0.000 claims description 4
- 239000000377 silicon dioxide Substances 0.000 claims description 4
- 239000002245 particle Substances 0.000 claims description 3
- PNEYBMLMFCGWSK-UHFFFAOYSA-N Alumina Chemical compound [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 claims description 2
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 claims description 2
- 229910052725 zinc Inorganic materials 0.000 claims description 2
- 239000011701 zinc Substances 0.000 claims description 2
- 229910052594 sapphire Inorganic materials 0.000 description 7
- 239000010980 sapphire Substances 0.000 description 7
- 239000000463 material Substances 0.000 description 6
- 239000007789 gas Substances 0.000 description 4
- 238000001755 magnetron sputter deposition Methods 0.000 description 4
- 238000010897 surface acoustic wave method Methods 0.000 description 4
- 230000007423 decrease Effects 0.000 description 3
- 238000009826 distribution Methods 0.000 description 3
- 238000007796 conventional method Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000009434 installation Methods 0.000 description 2
- 150000002739 metals Chemical class 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 239000013077 target material Substances 0.000 description 2
- 238000007740 vapor deposition Methods 0.000 description 2
- 230000002159 abnormal effect Effects 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 238000011835 investigation Methods 0.000 description 1
- 229910000464 lead oxide Inorganic materials 0.000 description 1
- YEXPOXQUZXUXJW-UHFFFAOYSA-N oxolead Chemical compound [Pb]=O YEXPOXQUZXUXJW-UHFFFAOYSA-N 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N30/00—Piezoelectric or electrostrictive devices
- H10N30/01—Manufacture or treatment
- H10N30/07—Forming of piezoelectric or electrostrictive parts or bodies on an electrical element or another base
- H10N30/074—Forming of piezoelectric or electrostrictive parts or bodies on an electrical element or another base by depositing piezoelectric or electrostrictive layers, e.g. aerosol or screen printing
- H10N30/076—Forming of piezoelectric or electrostrictive parts or bodies on an electrical element or another base by depositing piezoelectric or electrostrictive layers, e.g. aerosol or screen printing by vapour phase deposition
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Physical Vapour Deposition (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP9087980A JPS5715482A (en) | 1980-07-02 | 1980-07-02 | Manufacture of thin zinc oxide piezoelectric film |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP9087980A JPS5715482A (en) | 1980-07-02 | 1980-07-02 | Manufacture of thin zinc oxide piezoelectric film |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5715482A JPS5715482A (en) | 1982-01-26 |
| JPH021231B2 true JPH021231B2 (enrdf_load_stackoverflow) | 1990-01-10 |
Family
ID=14010740
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP9087980A Granted JPS5715482A (en) | 1980-07-02 | 1980-07-02 | Manufacture of thin zinc oxide piezoelectric film |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5715482A (enrdf_load_stackoverflow) |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS62214167A (ja) * | 1986-03-17 | 1987-09-19 | Nec Corp | 圧電薄膜の製造方法 |
| JP5217051B2 (ja) * | 2006-11-27 | 2013-06-19 | オムロン株式会社 | 薄膜製造方法 |
| JP5135253B2 (ja) * | 2009-02-19 | 2013-02-06 | 株式会社東芝 | 慣性センサおよび慣性測定装置 |
-
1980
- 1980-07-02 JP JP9087980A patent/JPS5715482A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS5715482A (en) | 1982-01-26 |
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