JPH02119275A - Light-emitting diode - Google Patents
Light-emitting diodeInfo
- Publication number
- JPH02119275A JPH02119275A JP63273614A JP27361488A JPH02119275A JP H02119275 A JPH02119275 A JP H02119275A JP 63273614 A JP63273614 A JP 63273614A JP 27361488 A JP27361488 A JP 27361488A JP H02119275 A JPH02119275 A JP H02119275A
- Authority
- JP
- Japan
- Prior art keywords
- light
- type
- emitting
- cap layer
- lens
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000000758 substrate Substances 0.000 claims abstract description 18
- 239000004065 semiconductor Substances 0.000 claims abstract description 10
- 239000000284 extract Substances 0.000 claims description 3
- 230000003287 optical effect Effects 0.000 abstract description 4
- 238000000034 method Methods 0.000 abstract description 3
- 238000005253 cladding Methods 0.000 description 3
- 238000009792 diffusion process Methods 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 238000010884 ion-beam technique Methods 0.000 description 3
- 238000003754 machining Methods 0.000 description 3
- 239000013307 optical fiber Substances 0.000 description 3
- 150000001875 compounds Chemical class 0.000 description 2
- 230000008878 coupling Effects 0.000 description 2
- 238000010168 coupling process Methods 0.000 description 2
- 238000005859 coupling reaction Methods 0.000 description 2
- 238000000206 photolithography Methods 0.000 description 2
- 238000004544 sputter deposition Methods 0.000 description 2
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 238000003486 chemical etching Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
Landscapes
- Led Devices (AREA)
Abstract
Description
【発明の詳細な説明】
〔産業上の利用分野〕
本発明は、化合物半導体を用いた発光ダイオードに関し
、特に半導体基板もしくはキャップ層から光出力を取り
出す面発光型の発光ダイオードに関する。DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to a light emitting diode using a compound semiconductor, and particularly to a surface emitting type light emitting diode that extracts light output from a semiconductor substrate or a cap layer.
従来、この種の発光ダイオードは、光出力を取り出す基
板面もしくはキャップ層面が平面であるものが多かった
。しかし、光ファイバーを用いた情報伝達用光源とする
場合には、光ファイバーとの結合損失が多いため第２図
のように発光面を球凸レンズ状に加工した構造も用いら
れていた。すなわち、ＩｎＰ基板１上にＧａＩｎＰＡｓ
活性層２、ＩｎＰクラッド１Ｂ、ＧａＩｎＰＡｓキャッ
プ層４を順次エピタキシャル結晶成長させ、ＧａＩｎＰ
Ａｓキャップ層４にＺｎ拡散部を形成し、発光面のＩｎ
Ｐ基板１に球凸レンズ７を形成した構造を有している。Conventionally, many light emitting diodes of this type have a flat substrate surface or a cap layer surface from which light output is extracted. However, in the case of a light source for information transmission using an optical fiber, a structure in which the light emitting surface is processed into a spherical convex lens shape as shown in FIG. 2 has also been used because there is a large coupling loss with the optical fiber. That is, GaInPAs is formed on the InP substrate 1.
The active layer 2, the InP cladding 1B, and the GaInPAs cap layer 4 are epitaxially grown in order, and the GaInP
A Zn diffusion part is formed in the As cap layer 4, and the In
It has a structure in which a spherical convex lens 7 is formed on a P substrate 1.
上述した従来の球凸レンズ加工した発光ダイオードは、
球面加工のとき曲率半径を小さくしようとすると、レン
ズ部以外を深くエツチングしなければならず加工がむず
かしいこと、そのため球面の形状が変形して発光パター
ンが変形しやすいこと、キャップ層を加工する場合には
予めキャップ層を非常に厚く結晶成長しなければならな
い欠点があった。The conventional light emitting diode with a spherical convex lens described above is
If you try to reduce the radius of curvature when machining a spherical surface, you will have to deeply etch parts other than the lens part, making machining difficult.As a result, the shape of the spherical surface will deform and the light emitting pattern will be easily deformed.When machining the cap layer had the disadvantage that the cap layer had to be crystal-grown very thickly in advance.
また、球レンズ部の周囲に電極を形成する際、レンズの
凸部のためにフォト・リソグラフィ工程において密着露
光ができず、電極パターンの周辺部が不安定に変形する
という欠点もあった。Further, when forming an electrode around the spherical lens part, there is a drawback that close exposure cannot be performed in the photolithography process due to the convex part of the lens, and the peripheral part of the electrode pattern is unstablely deformed.
本発明の目的は、発光面の平坦性を残した薄い領域の加
工でありながら、充分に焦点距離の短かいレンズを備え
た面発光型の発光ダイオードを提供することにある。An object of the present invention is to provide a surface-emitting type light-emitting diode that is provided with a lens having a sufficiently short focal length while processing a thin region that maintains the flatness of the light-emitting surface.
本発明は、半導体基板もしくはキャップ層から光を取り
出す面発光ダイオードにおいて、発光面となる半導体基
板もしくはキャップ層に同心円状の溝を形成することに
よって作成したフレネル・レンズを有していることを特
徴とする。The present invention is characterized in that a surface emitting diode that extracts light from a semiconductor substrate or a cap layer includes a Fresnel lens created by forming concentric grooves in the semiconductor substrate or cap layer that serves as a light emitting surface. shall be.
次に本発明について図面を参照して説明する。 Next, the present invention will be explained with reference to the drawings.
第１図は本発明の一実施例で、Ｇａ Ｉ ｎＰＡｓ／Ｉ
ｎＰ系の発光ダイオードに応用した場合の横断面図であ
る。まずｎ型のＩｎＰ基板１上に、発光領域となるＰ型
のＧａ Ｉ ｎＰＡｓ活性層２、光を閉じ込めるＰ型の
ＩｎＰクラッドＮ３とｎ型のＧａ Ｉ ｎＰＡｓキャッ
プ層４を順次エピタキシャル結晶成長させる。次に発光
領域として限定する部分に対応するＧａ Ｉ ｎＰＡｓ
キャップ層の一部をＺｎ拡散によってＰ型とすることで
発光ダイオードが作成され、Ｚｎ拡散部５と対向したＩ
ｎＰ基板１の表面から光出力が取り出される。本実施例
では、ＩｎＰ基板１の表面に同心円状のフレネル・レン
ズ６を形成すると、光出力を一点に集束させることがで
きるので、光ファイバーとの結合が良好となる。このと
きフレネル・レンズの加工法はフォト・リソグラフィと
化学エツチング法でも可能であるが、集束されたイオン
・ビームを用いたスパッタリング法によって形成すれば
、より正確な形状とすることができる。FIG. 1 shows an embodiment of the present invention, in which Ga I nPAs/I
FIG. 2 is a cross-sectional view when applied to an nP-based light emitting diode. First, on an n-type InP substrate 1, a P-type Ga I nPAs active layer 2 serving as a light emitting region, a P-type InP cladding N3 for confining light, and an n-type Ga I nPAs cap layer 4 are sequentially epitaxially grown. Next, Ga I nPAs corresponding to the portion to be defined as a light emitting region
A light emitting diode is created by making a part of the cap layer P type by Zn diffusion, and the I
Optical output is extracted from the surface of the nP substrate 1. In this embodiment, if a concentric Fresnel lens 6 is formed on the surface of the InP substrate 1, the optical output can be focused on one point, resulting in good coupling with the optical fiber. At this time, the Fresnel lens can be fabricated by photolithography and chemical etching, but a more accurate shape can be achieved if it is formed by sputtering using a focused ion beam.
たとえば、ＩｎＰ基板１と平行なＸ−Ｙ平面上で、Ｘ＝
ａ ｓｉｎθ、Ｙ＝ａ ｃｏｓθ（ａは振幅、θは
位相角）なる交流電圧を加えた偏向電極Ｘ、Ｙによって
イオン・ビームを走査させれば、円形にイオン・ビーム
を照射することができる。そして偏向電圧（＠幅ａ）を
変えればビーム円の半径を変化させることができ、照射
時間を変えればスパッタリング量（削れる深さ）を調整
することができる。このような方法を用いたとき、フレ
ネル・レンズ６の形状であれば加工溝は浅くてすむので
、わずかな手間で第２図の球凸レンズ７の場合よりも焦
点距離が短かいレンズを形成することができる。For example, on the X-Y plane parallel to the InP substrate 1, X=
If the ion beam is scanned by the deflection electrodes X and Y to which an AC voltage of a sin θ, Y=a cos θ (a is the amplitude and θ is the phase angle) is applied, the ion beam can be irradiated in a circular manner. By changing the deflection voltage (@width a), the radius of the beam circle can be changed, and by changing the irradiation time, the amount of sputtering (depth to be scraped) can be adjusted. When such a method is used, since the shape of the Fresnel lens 6 requires only a shallow processing groove, a lens with a shorter focal length than that of the spherical convex lens 7 shown in Fig. 2 can be formed with little effort. be able to.
これまでは、Ｇａ Ｉ ｎＰＡｓ／Ｉ ｎＰ系の発光ダ
イオードを例に説明してきたが、ＡＪＩＧａＡｓ系など
他のｍ−ｖ、ｎ−ｖｒ化合物半導体を用いた発光ダイオ
ードにも応用することができる。さらにキャップ層から
光出力を取り出す場合でも同様なので面発光レーザー等
にも応用することができる。Up to now, the explanation has been given using a GaInPAs/InP-based light emitting diode as an example, but the invention can also be applied to light-emitting diodes using other m-v, n-vr compound semiconductors such as AJI GaAs-based. Furthermore, since the same applies when extracting optical output from the cap layer, it can be applied to surface-emitting lasers and the like.
以上説明したように、本発明を用いると発光面を平坦に
保ったまま、わずかな加工量で充分に焦点距離の短かい
レンズの付いた面発光ダイオードが得られる効果がある
。そしてレンズ形状の再現性が向上するばかりでなく、
レンズ周囲の電極形状も均一にできる効果がある。As described above, the present invention has the effect that a surface emitting diode with a lens having a sufficiently short focal length can be obtained with a small amount of processing while keeping the light emitting surface flat. Not only does the reproducibility of the lens shape improve,
This has the effect of making the electrode shape around the lens uniform.
第１図は、本発明の一実施例の発光ダイオードの断面図
、第２図は従来の発光ダイオードの断面図である。
１− Ｉ ｎ Ｐ基板、２−Ｇａ１ｎＰＡｓ活性層、３
・・・ＩｎＰクラッド層、４・・・Ｇａ Ｉ ｎＰＡｓ
キャップ層、５・・・ｎ拡散部、６・・・フレネル・レ
ンズ、７・・・球凸レンズ。FIG. 1 is a sectional view of a light emitting diode according to an embodiment of the present invention, and FIG. 2 is a sectional view of a conventional light emitting diode. 1- I n P substrate, 2- Ga1nPAs active layer, 3
...InP cladding layer, 4...GaInPAs
Cap layer, 5...n diffusion section, 6... Fresnel lens, 7... spherical convex lens.
Claims (1)
型発光ダイオードにおいて、発光面となる半導体基板も
しくはキャップ層に同心円状の溝を形成することによっ
て発光面をフレネル・レンズとしたことを特徴とする発
光ダイオード。A surface-emitting light-emitting diode that extracts light from a semiconductor substrate or a cap layer, which is characterized in that the light-emitting surface is made into a Fresnel lens by forming concentric grooves in the semiconductor substrate or cap layer that serves as the light-emitting surface. .
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP63273614A JPH02119275A (en) | 1988-10-28 | 1988-10-28 | Light-emitting diode |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP63273614A JPH02119275A (en) | 1988-10-28 | 1988-10-28 | Light-emitting diode |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH02119275A true JPH02119275A (en) | 1990-05-07 |
Family
ID=17530195
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP63273614A Pending JPH02119275A (en) | 1988-10-28 | 1988-10-28 | Light-emitting diode |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH02119275A (en) |
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5875205A (en) * | 1993-12-22 | 1999-02-23 | Siemens Aktiengesellschaft | Optoelectronic component and method for the manufacture thereof |
| JP2002141556A (en) * | 2000-09-12 | 2002-05-17 | Lumileds Lighting Us Llc | Light emitting diode with improved light extraction efficiency |
| DE10120703A1 (en) * | 2001-04-27 | 2002-10-31 | Osram Opto Semiconductors Gmbh | Semiconductor chip for optoelectronics |
| US7026657B2 (en) | 2000-04-19 | 2006-04-11 | Osram Gmbh | High radiance led chip and a method for producing same |
| JP2009010435A (en) * | 2001-03-30 | 2009-01-15 | Philips Lumileds Lightng Co Llc | Forming optical element of light emitting device for improved light extraction |
| JP2014165205A (en) * | 2013-02-21 | 2014-09-08 | Fujitsu Ltd | Optical semiconductor element and manufacturing method of the same |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS59205774A (en) * | 1983-05-09 | 1984-11-21 | Nec Corp | Semiconductor light-emitting element |
| JPS6184878A (en) * | 1984-10-03 | 1986-04-30 | Sumitomo Electric Ind Ltd | Light emitting element |
-
1988
- 1988-10-28 JP JP63273614A patent/JPH02119275A/en active Pending
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS59205774A (en) * | 1983-05-09 | 1984-11-21 | Nec Corp | Semiconductor light-emitting element |
| JPS6184878A (en) * | 1984-10-03 | 1986-04-30 | Sumitomo Electric Ind Ltd | Light emitting element |
Cited By (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5875205A (en) * | 1993-12-22 | 1999-02-23 | Siemens Aktiengesellschaft | Optoelectronic component and method for the manufacture thereof |
| US7026657B2 (en) | 2000-04-19 | 2006-04-11 | Osram Gmbh | High radiance led chip and a method for producing same |
| US7306960B2 (en) | 2000-04-19 | 2007-12-11 | Osram Gmbh | High radiance LED chip and a method for producing same |
| JP2002141556A (en) * | 2000-09-12 | 2002-05-17 | Lumileds Lighting Us Llc | Light emitting diode with improved light extraction efficiency |
| US9583683B2 (en) | 2000-09-12 | 2017-02-28 | Lumileds Llc | Light emitting devices with optical elements and bonding layers |
| US10312422B2 (en) | 2000-09-12 | 2019-06-04 | Lumileds Llc | Light emitting devices with optical elements and bonding layers |
| JP2009010435A (en) * | 2001-03-30 | 2009-01-15 | Philips Lumileds Lightng Co Llc | Forming optical element of light emitting device for improved light extraction |
| JP2012156566A (en) * | 2001-03-30 | 2012-08-16 | Philips Lumileds Lightng Co Llc | Forming optical element in light emitting device for improving light extraction efficiency |
| DE10120703A1 (en) * | 2001-04-27 | 2002-10-31 | Osram Opto Semiconductors Gmbh | Semiconductor chip for optoelectronics |
| US7145181B2 (en) | 2001-04-27 | 2006-12-05 | Osram Opto Semiconductors Gmbh | Semiconductor chip for optoelectronics |
| DE10291889B4 (en) * | 2001-04-27 | 2013-02-21 | Osram Opto Semiconductors Gmbh | Semiconductor chip for optoelectronics |
| JP2014165205A (en) * | 2013-02-21 | 2014-09-08 | Fujitsu Ltd | Optical semiconductor element and manufacturing method of the same |
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