JPH02119264A - Semiconductor integrated circuit device - Google Patents
Semiconductor integrated circuit deviceInfo
- Publication number
- JPH02119264A JPH02119264A JP27241788A JP27241788A JPH02119264A JP H02119264 A JPH02119264 A JP H02119264A JP 27241788 A JP27241788 A JP 27241788A JP 27241788 A JP27241788 A JP 27241788A JP H02119264 A JPH02119264 A JP H02119264A
- Authority
- JP
- Japan
- Prior art keywords
- terminal
- resistor
- terminals
- functional element
- integrated circuit
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 9
- 239000000758 substrate Substances 0.000 claims abstract 4
- 229910021420 polycrystalline silicon Inorganic materials 0.000 abstract description 12
- 229920005591 polysilicon Polymers 0.000 abstract description 8
- 238000000034 method Methods 0.000 abstract description 2
- 238000010586 diagram Methods 0.000 description 4
- 230000000694 effects Effects 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body
- H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including only semiconductor components of a single kind
- H01L27/0802—Resistors only
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Measuring Fluid Pressure (AREA)
- Pressure Sensors (AREA)
- Semiconductor Integrated Circuits (AREA)
Abstract
Description
【発明の詳細な説明】
（発明の技術分野）
本発明は半導体集積回路装置の出力特性の調整に関する
ものである。DETAILED DESCRIPTION OF THE INVENTION (Technical Field of the Invention) The present invention relates to adjusting the output characteristics of a semiconductor integrated circuit device.
（従来技術とその問題点）
センサ素子の一例を示すものでありＲ１−Ｒ４はピエゾ
抵抗より出力される圧力電気変換素子部（機能素子）、
Ａ１〜Ａ、は演算増巾器、Ｒ６〜ＲＩＧはその周辺の調
整抵抗部であり特に増巾器Ａ１〜Ａ。(Prior art and its problems) This shows an example of a sensor element, and R1-R4 are pressure-electric conversion elements (functional elements) output from piezoresistors;
A1-A are operational amplifiers, and R6-RIG are adjustment resistors around them, especially the amplifiers A1-A.
は入出力調整用の多結晶シリコン抵抗体１４〜１６が設
けられている。この構造によれば機能素子部及び出力部
がモノリシック集積回路ＩＣとして形成されるために外
部出力部を設ける必要がない等の利点を有するが、その
反面多結晶抵抗体Ｒ〜ＲＩ１．にある値以上の電流を流
して、その抵抗値を減少させて、回路としての動作点を
調整しようとする場合、該抵抗の両端に、電圧源、又は
電流源を接続するので、そこに発生する電圧から、ＩＣ
の他の部分を保護するためには、第１図の中のａ、ｂの
ように、抵抗Ｒ１，〜１．の両端を他の部分から切り離
す必要がある。さらに、該抵抗の抵抗値の調整後には、
再び、そこを接続しなければならないので、非常に工数
を要する等の欠点がある第１図はこの種の集積回路装置
他えば集積圧力（発明の目的）
本発明は上記の欠点を解消し、容易に出力調整可能な集
積回路装置を提供するものである。are provided with polycrystalline silicon resistors 14 to 16 for input/output adjustment. According to this structure, since the functional element section and the output section are formed as a monolithic integrated circuit IC, there is an advantage that there is no need to provide an external output section, but on the other hand, the polycrystalline resistors R to RI1. When trying to adjust the operating point of the circuit by passing a current higher than a certain value through the resistor and decreasing its resistance value, a voltage source or current source is connected across the resistor, so the voltage generated there From the voltage to
In order to protect the other parts, resistors R1, .about.1. It is necessary to separate both ends from the other parts. Furthermore, after adjusting the resistance value of the resistor,
This type of integrated circuit device has disadvantages such as requiring a large number of man-hours because the connections have to be made again.The present invention solves the above disadvantages, The present invention provides an integrated circuit device whose output can be easily adjusted.
（ｆｅ明の構成と作用） 以下本発明の詳細な説明する。(Composition and action of fe Ming) The present invention will be explained in detail below.
圧力センサとアンプの回路を第１図に示したが、この集
積回路を具現化する場合において、本発明は抵抗Ｒ３，
〜Ｒ１ｌ１の回路定数の抵抗値を修正するものである。The circuit of the pressure sensor and the amplifier is shown in FIG.
This is to correct the resistance value of the circuit constant of ~R1l1.
第２図（ａ）に示されたＳ、基板２１、多結晶シリコン
抵抗２２、電極２３、Ｓ、０２膜２４よりなる多結晶シ
リコンの抵抗体の両端電極に比較的大なる（ＩＸＩＯ−
’Ａ／ｄの如き）を流を通じた場合、同図（ｂ）に示す
ように、抵抗値が減少することが発見され、特許第１１
７１６６０号に提案されている。本発明はこの多結晶シ
リコン抵抗体を分割抵抗体として、第３図の抵抗Ｒ１４
におけるｃ、ｄ、ｅのようにタップを出し、Ｃとｄ又は
ｅとｄの間の抵抗の値を調整する訳である。抵抗、Ｒ３
，の調整を行なう場合には、ポリシリコン抵抗Ｒ１，の
両端の端子、Ｃとｅを、ＩＣ回路の中のアース電位に固
定し、電圧源又は、電流源を、端子ｄと、アース（即ち
、Ｃとｅ）の間に接続して、ある値以上の電流を流すこ
とによって、ポリシリコン抵抗Ｒ１，の調整を行なう、
このようにすると、調整する過程で、ポリシリコン抵抗
Ｒ１４に発生する電圧はＩＣ回路内の、他の部分に印加
されることがないので、安全に調整することができる。A relatively large (IXIO-
It was discovered that when a current such as 'A/d) is passed through a current, the resistance value decreases as shown in the same figure (b).
No. 71660. In the present invention, this polycrystalline silicon resistor is used as a divided resistor, and the resistor R14 in FIG.
Taps are taken out like c, d, and e in , and the value of the resistance between C and d or e and d is adjusted. Resistance, R3
, when adjusting the terminals C and e at both ends of the polysilicon resistor R1, are fixed to the ground potential in the IC circuit, and the voltage source or current source is connected to the terminal d and the ground (i.e. , C and e), and by flowing a current of a certain value or more, the polysilicon resistor R1 is adjusted.
In this way, the voltage generated in the polysilicon resistor R14 during the adjustment process is not applied to other parts of the IC circuit, so that the adjustment can be performed safely.
（発明の効果）
以上の説明から明らかなように本発明によればポリシリ
コン抵抗体にある値以上の電流を流すことによって、そ
の抵抗値を非可逆的に変化させることのできるポリシリ
コン抵抗をＩＣ回路の構成要素として利用する場合、そ
の調整のために、ポリシリコン抵抗の両端を一時、回路
内の他の部分から切り離す必要がなくなり、その調整が
、非常に簡ｔｌｌになり実用上の効果は大きい。(Effects of the Invention) As is clear from the above description, the present invention provides a polysilicon resistor whose resistance value can be irreversibly changed by passing a current of more than a certain value through the polysilicon resistor. When used as a component of an IC circuit, there is no need to temporarily separate both ends of the polysilicon resistor from other parts of the circuit in order to adjust it, making the adjustment extremely simple and having practical effects. is big.
第１図は本発明を適用する従来の集積圧力センサ素子の
回路例図、第２図は本発明の詳細な説明するための抵抗
体構造図及び特性図、第３図は本発明の一実施例を示す
回路例図である０図中Ｒ３−Ｒ１はピエゾ抵抗、Ａ１〜
Ａ、は演算増巾器Ｒ１゜〜Ｒ１６は多結晶（ポリ）シリ
コン抵抗体ｃ −ｅは端子である。Fig. 1 is a circuit example diagram of a conventional integrated pressure sensor element to which the present invention is applied, Fig. 2 is a resistor structure diagram and characteristic diagram for explaining the present invention in detail, and Fig. 3 is an embodiment of the present invention. In Figure 0, which is a circuit example diagram showing an example, R3-R1 are piezoresistors, A1~
A, operational amplifiers R1° to R16 are polycrystalline silicon resistors c-e are terminals.
Claims (1)
に前記機能素子の入出力調整用の多結晶抵抗体が設けら
れた半導体集積回路装置において、前記多結晶抵抗体に
２以上の端子を設け一方の端子を電源端子、他方の端子
をアース端子として前記端子間に前記機能素子と独立し
て抵抗値修正電流を供給するようにしたことを特徴とす
る半導体集積回路装置。In a semiconductor integrated circuit device in which a functional element is formed on a semiconductor substrate, and a polycrystalline resistor for adjusting input and output of the functional element is provided on the surface of the semiconductor substrate, two or more terminals are provided on the polycrystalline resistor. 1. A semiconductor integrated circuit device, wherein one terminal is a power supply terminal and the other terminal is a ground terminal, and a resistance value correction current is supplied between the terminals independently of the functional element.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP27241788A JPH02119264A (en) | 1988-10-28 | 1988-10-28 | Semiconductor integrated circuit device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP27241788A JPH02119264A (en) | 1988-10-28 | 1988-10-28 | Semiconductor integrated circuit device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH02119264A true JPH02119264A (en) | 1990-05-07 |
Family
ID=17513619
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP27241788A Pending JPH02119264A (en) | 1988-10-28 | 1988-10-28 | Semiconductor integrated circuit device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH02119264A (en) |
-
1988
- 1988-10-28 JP JP27241788A patent/JPH02119264A/en active Pending
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