JPH02119211A - Manufacture of titanium thin film capacitor - Google Patents
Manufacture of titanium thin film capacitorInfo
- Publication number
- JPH02119211A JPH02119211A JP27358988A JP27358988A JPH02119211A JP H02119211 A JPH02119211 A JP H02119211A JP 27358988 A JP27358988 A JP 27358988A JP 27358988 A JP27358988 A JP 27358988A JP H02119211 A JPH02119211 A JP H02119211A
- Authority
- JP
- Japan
- Prior art keywords
- thin film
- dielectric film
- film capacitor
- organic titanium
- alkyl group
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000003990 capacitor Substances 0.000 title claims abstract description 14
- 239000010409 thin film Substances 0.000 title claims abstract description 14
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 title claims abstract description 9
- 239000010936 titanium Substances 0.000 title claims abstract description 9
- 229910052719 titanium Inorganic materials 0.000 title claims abstract description 9
- 238000004519 manufacturing process Methods 0.000 title claims description 6
- 238000000034 method Methods 0.000 claims abstract description 16
- 239000010408 film Substances 0.000 claims abstract description 15
- 150000003609 titanium compounds Chemical class 0.000 claims abstract description 11
- 229910052751 metal Inorganic materials 0.000 claims abstract description 8
- 239000002184 metal Substances 0.000 claims abstract description 8
- 125000000217 alkyl group Chemical group 0.000 claims abstract description 6
- 238000010438 heat treatment Methods 0.000 claims description 3
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 3
- 238000003892 spreading Methods 0.000 claims description 2
- 238000000151 deposition Methods 0.000 claims 1
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 abstract description 8
- 238000007598 dipping method Methods 0.000 abstract description 5
- 230000015556 catabolic process Effects 0.000 abstract description 3
- 150000002894 organic compounds Chemical class 0.000 abstract 1
- 150000001875 compounds Chemical class 0.000 description 3
- 125000004432 carbon atom Chemical group C* 0.000 description 2
- 238000000576 coating method Methods 0.000 description 2
- 238000007796 conventional method Methods 0.000 description 2
- 238000010030 laminating Methods 0.000 description 2
- JMXKSZRRTHPKDL-UHFFFAOYSA-N titanium ethoxide Chemical compound [Ti+4].CC[O-].CC[O-].CC[O-].CC[O-] JMXKSZRRTHPKDL-UHFFFAOYSA-N 0.000 description 2
- 239000010953 base metal Substances 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000007654 immersion Methods 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 230000001590 oxidative effect Effects 0.000 description 1
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 description 1
Abstract
Description
【発明の詳細な説明】
産業上の利用分野
本発明は、チタニウム薄膜コンデンサの製造方法に関す
るものである。DETAILED DESCRIPTION OF THE INVENTION Field of the Invention The present invention relates to a method for manufacturing titanium thin film capacitors.
従来の技術
従来、チタニウム薄膜コンデンサの製造方法は、塗付法
あるいは浸漬法で行われていた。Prior Art Conventionally, titanium thin film capacitors have been manufactured using a coating method or a dipping method.
発明が解決しようとする問題点
従来の塗付法あるいは浸漬法では、金属表面上に均一に
有機チタン化合物を付着させることは難しく、均一な誘
電体皮膜が形成されない。このため静電容量が高く絶縁
破壊電圧の高い薄膜コンデンサができなかった。Problems to be Solved by the Invention With conventional coating or dipping methods, it is difficult to uniformly adhere an organic titanium compound onto a metal surface, and a uniform dielectric film cannot be formed. For this reason, thin film capacitors with high capacitance and high dielectric breakdown voltage could not be created.
また、従来使用されていた有機チタン化合物は、空気中
の水分によって分解されるような不安定な化合物であり
取り扱いが難しいなどの問題点があった。In addition, conventionally used organic titanium compounds have problems such as being difficult to handle because they are unstable compounds that can be decomposed by moisture in the air.
問題点を解決するための手段
本発明は、上述の問題点を解決するため、前述の化学的
に安定な有機チタン化合物を水面展開法（以下ＬＢ法と
いう）を用いて金属表面上に有機チタン化合物の単分子
膜層を形成し、それらの単分子膜層を積層することによ
って任意の厚さで均一な誘電体皮膜を形成することを特
徴とする特許ニウム薄膜コンデンサの製造方法である。Means for Solving the Problems In order to solve the above-mentioned problems, the present invention uses the above-mentioned chemically stable organic titanium compound on a metal surface using a water surface development method (hereinafter referred to as LB method). This patented method for manufacturing a thin film capacitor is characterized by forming a monomolecular film layer of a compound and laminating these monomolecular film layers to form a uniform dielectric film with an arbitrary thickness.
すなわち、下記に示す構造式を有する有機チタン化合物
を金属表面上に水面展開法によって付着させて加熱し、
Ｔ ｉ Ｏを誘電体皮膜を形成することを特徴とするチ
タニウム薄膜コンデンサの製造方法である。That is, the method for producing a titanium thin film capacitor is characterized in that an organic titanium compound having the structural formula shown below is deposited on a metal surface by a water surface spreading method and heated to form a dielectric film of TiO. .
Ｒ：アルキル基
なお、上記構造式中アルキル基Ｒの炭素数の範囲は８〜
１Ｂ（Ｃ８〜Ｃ＋ｓ）である。R: Alkyl group In the above structural formula, the number of carbon atoms in the alkyl group R is in the range of 8 to
1B (C8 to C+s).
作用
本発明の方法によって、金属表面上に有機チタン化合物
の単分子膜層を形成し、それらの単分子膜層を積層する
ことによって、任意の厚さで均一なＴｉＯ２誘電体皮膜
を形成する。Operation According to the method of the present invention, a monomolecular film layer of an organic titanium compound is formed on a metal surface, and by stacking these monomolecular film layers, a uniform TiO2 dielectric film with an arbitrary thickness is formed.
実施例
以下、本発明の実施例について説明する。５０鶴Ｘ５０
ｍｍＸ ０．５ｍｍのサイズのチタン板をＬＢ法にて有
機チタン、化合物の単分子膜層を５０分子〜１００分子
積層し、８５０℃〜１０００℃で加熱酸化し才形成した
薄膜コンデンサと従来用いられていた浸漬法で形成した
薄膜コンデンサの特性を第１表に示す。Examples Examples of the present invention will be described below. 50 cranes x 50
Conventionally used thin film capacitors are made by laminating 50 to 100 molecules of a monomolecular film layer of organic titanium or a compound on a titanium plate with a size of mm x 0.5 mm using the LB method, and heating and oxidizing it at 850°C to 1000°C to form a thin film capacitor. Table 1 shows the characteristics of thin film capacitors formed using the immersion method.
なお、浸漬法の有機チタン化合物はテトラエチルチタネ
ートを用いた。Note that tetraethyl titanate was used as the organic titanium compound in the dipping method.
（以下余白）
第１表よりいずれの有機チタン化合物を用いてもＬＢ法
で形成された薄膜コンデンサは従来法より静電容量が高
（、しかも絶縁破壊電圧の高い薄膜コンデンサが製造で
きることが確認された。(Left below) From Table 1, it is confirmed that thin film capacitors formed by the LB method have a higher capacitance (and a higher dielectric breakdown voltage) than the conventional method, regardless of which organic titanium compound is used. Ta.
なお、基盤となる金属はチタン板に限らず、熱処理条件
の８５０℃〜１０００℃に耐えられる金属であればよい
。また、アルキル基の長さはＬＢ法を使用する上でＣ６
〜Ｃ１ａの炭素数が８〜１８の範囲の有機チタン化合物
が良好である。Note that the base metal is not limited to a titanium plate, and may be any metal that can withstand the heat treatment conditions of 850°C to 1000°C. In addition, the length of the alkyl group is C6 when using the LB method.
An organic titanium compound in which the number of carbon atoms in ~C1a is in the range of 8 to 18 is preferable.
発明の効果
以上の結果から明らかなようにＬＢ法で形成された薄膜
コンデンサは従来法より静電容量が高く、しかも絶縁電
圧の高い薄膜コンデンサが得られる製造法であり、工業
的ならびに実用的価値の大なるものがある。Effects of the Invention As is clear from the above results, the thin film capacitor formed by the LB method has a higher capacitance than the conventional method, and is a manufacturing method that can obtain thin film capacitors with a high insulation voltage, and has industrial and practical value. There is a big thing.
Claims (1)
に水面展開法によって付着させて加熱し、ＴｉＯ＿２誘
電体皮膜を形成することを特徴とするチタニウム薄膜コ
ンデンサの製造方法。 Ｒ：アルキル基[Scope of Claims] A method for manufacturing a titanium thin film capacitor, which comprises depositing an organic titanium compound having the structure shown below on a metal surface by a water surface spreading method and heating it to form a TiO_2 dielectric film. R: alkyl group
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP27358988A JPH02119211A (en) | 1988-10-28 | 1988-10-28 | Manufacture of titanium thin film capacitor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP27358988A JPH02119211A (en) | 1988-10-28 | 1988-10-28 | Manufacture of titanium thin film capacitor |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH02119211A true JPH02119211A (en) | 1990-05-07 |
Family
ID=17529896
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP27358988A Pending JPH02119211A (en) | 1988-10-28 | 1988-10-28 | Manufacture of titanium thin film capacitor |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH02119211A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH02170511A (en) * | 1988-12-23 | 1990-07-02 | Matsushita Electric Ind Co Ltd | Film capacitor and manufacture thereof |
| WO2002049965A1 (en) * | 2000-12-19 | 2002-06-27 | Toho Titanium Co., Ltd. | Method of forming titanium oxide film and titanium electrolytic capacitor |
-
1988
- 1988-10-28 JP JP27358988A patent/JPH02119211A/en active Pending
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH02170511A (en) * | 1988-12-23 | 1990-07-02 | Matsushita Electric Ind Co Ltd | Film capacitor and manufacture thereof |
| WO2002049965A1 (en) * | 2000-12-19 | 2002-06-27 | Toho Titanium Co., Ltd. | Method of forming titanium oxide film and titanium electrolytic capacitor |
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