JPH02119189A - Field-effect josephson transistor - Google Patents
Field-effect josephson transistorInfo
- Publication number
- JPH02119189A JPH02119189A JP63272349A JP27234988A JPH02119189A JP H02119189 A JPH02119189 A JP H02119189A JP 63272349 A JP63272349 A JP 63272349A JP 27234988 A JP27234988 A JP 27234988A JP H02119189 A JPH02119189 A JP H02119189A
- Authority
- JP
- Japan
- Prior art keywords
- field
- effect
- tunnel
- gaps
- josephson
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 230000005669 field effect Effects 0.000 title claims description 11
- 239000000758 substrate Substances 0.000 claims abstract description 6
- 239000002887 superconductor Substances 0.000 claims abstract description 6
- JRPBQTZRNDNNOP-UHFFFAOYSA-N barium titanate Chemical compound [Ba+2].[Ba+2].[O-][Ti]([O-])([O-])[O-] JRPBQTZRNDNNOP-UHFFFAOYSA-N 0.000 abstract description 2
- 229910002113 barium titanate Inorganic materials 0.000 abstract description 2
- 238000005530 etching Methods 0.000 abstract description 2
- 238000010884 ion-beam technique Methods 0.000 abstract description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 238000004806 packaging method and process Methods 0.000 description 2
- 229910052788 barium Inorganic materials 0.000 description 1
- 229910052681 coesite Inorganic materials 0.000 description 1
- 229910052906 cristobalite Inorganic materials 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- -1 oxygen ions Chemical class 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 229910052682 stishovite Inorganic materials 0.000 description 1
- 229910052905 tridymite Inorganic materials 0.000 description 1
Landscapes
- Superconductor Devices And Manufacturing Methods Thereof (AREA)
Abstract
Description
【発明の詳細な説明】
［産業上の利用分野］
本発明は電界効果型ジョセフソン・トランジスタの構造
に関する。DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to the structure of a field-effect Josephson transistor.
［従来の技術］
従来、電界効果型ジョセフソン・トランジスタのゲート
電極は、トンネル・ギャップの上面あるいは下面、ある
いは、側面を含む表面に形成されて成るのが通例であっ
た。[Prior Art] Conventionally, the gate electrode of a field-effect Josephson transistor has generally been formed on the top surface, bottom surface, or surface including the side surfaces of a tunnel gap.
［発明が解決しようとする課題］
しかし、上記従来技術によると電界効果型ジョセフソン
・トランジスタによる集積回路装置の実装密度の向上が
困難であると云う課題があった。[Problems to be Solved by the Invention] However, the above-mentioned conventional technology has a problem in that it is difficult to improve the packaging density of integrated circuit devices using field-effect Josephson transistors.
本発明は、かかる従来技術の課産を解決するための新ら
しい電界効果型ジョセフソン・トランジスタの構造を提
供することを目的とする。An object of the present invention is to provide a new field-effect Josephson transistor structure for solving the problems of the prior art.
［課題を解決するための手段］
上記課題を解決するために、本発明は、電界効果型ジョ
セフソン・トランジスタに関し、絶縁基板上に超電導体
膜配線を設け、該超電導体膜配線にトンネル・ギャップ
を設け、該トンネル・ギャップの側面にゲート電極を設
ける手段をとる事、及び前記超電導体膜配線に２つ以上
のトンネル・ギャップを設け、該２つ以上のトンネル・
ギャップの側面に、共通ゲート電極を設ける手段をとる
を０．０１μｍ程度に形成すると共に、共通ゲート４を
前記第１のトンネル・ギャップ２と第２のトンネル・ギ
ャップ３の側面に端部からの寸法を０．１μｍ程度に闇
して形成したものである。[Means for Solving the Problems] In order to solve the above problems, the present invention relates to a field-effect Josephson transistor, in which a superconductor film wiring is provided on an insulating substrate, and a tunnel gap is formed in the superconductor film wiring. and providing means for providing a gate electrode on the side surface of the tunnel gap, and providing two or more tunnel gaps in the superconductor film interconnection, and providing the two or more tunnel gaps.
A means for providing a common gate electrode is formed on the side surface of the gap to a thickness of about 0.01 μm, and a common gate 4 is formed on the side surface of the first tunnel gap 2 and the second tunnel gap 3 from the end. It is formed with a dimension of approximately 0.1 μm.
尚、電極配線後、全面に５１０２膜を形成し、トンネル
・ギャップ内及び共通ゲートとトンネル・ギャップ間を
ｓ ｉ ｏ２膜等の誘電体膜で埋め込んでも良く、電極
配線は、超電導体膜に図形状に酸素イオン等をイオン打
込みして形成しても良い［実施例コ
以下、実施例により本発明を詳述する。After wiring the electrodes, a 5102 film may be formed on the entire surface, and the inside of the tunnel gap and between the common gate and the tunnel gap may be filled with a dielectric film such as an SiO2 film. The shape may be formed by implanting oxygen ions or the like into the shape [Examples] The present invention will be described in detail below with reference to Examples.
第１図は本発明の一実施例を示す電界効果型ジョセフソ
ン・トランジスタの平面図である。すなわち、チタン酸
バリウム等より成る絶縁基板１０表面にはＹ 、 Ｂａ
、 Ｏｕ、 Ｏｆ 等の高温超電導体膜をα１μｍ厚
さ程度に形成し、イオン・ビーム エツチング等により
電極配線をなし、第１のトンネル・ギャップ２及び第２
のトンネル・ギャップ３更に、共通ゲート４は、トンネ
ル・ギャップ上に厚い絶縁膜を形成してオーバー・ラッ
プさせて、後程、Ａｔ等の金属電極で形成しても良い。FIG. 1 is a plan view of a field effect type Josephson transistor showing one embodiment of the present invention. That is, the surface of the insulating substrate 10 made of barium titanate or the like is coated with Y, Ba, etc.
, Ou, Of, etc. are formed to a thickness of approximately α1 μm, electrode wiring is formed by ion beam etching, etc., and the first tunnel gap 2 and the second tunnel gap 2 are formed.
Further, the common gate 4 may be formed by forming a thick insulating film on the tunnel gap so as to overlap it, and later forming a metal electrode such as At.
［発明の効果コ
本発明により、電界効果型ジョセフソン・トランジスタ
を用いた集積回路装置の実装密度を高めることができる
効果がある。[Effects of the Invention] The present invention has the effect of increasing the packaging density of integrated circuit devices using field-effect Josephson transistors.
第１図は本発明の一実施例を示す電界効果型ジョセフソ
ン・トランジスタの平面図である。
１・・・・・・・・・絶縁基板
２・・・・・・・・・第１のトンネル・ギャップ３・・
・・・・・・・第２のトンネル・ギャップ４・・・・・
・・・・共通ゲート
＋ｇｉ禾基裁
４ 共荀もイード
以上FIG. 1 is a plan view of a field effect type Josephson transistor showing one embodiment of the present invention. 1...Insulating substrate 2...First tunnel gap 3...
・・・・・・Second tunnel gap 4・・・・・・
・・・・Common gate + gihekisai 4 common gate is also more than Eid
Claims (2)
ネル・ギャップが設けられ、該トンネル・ギャップの側
面にはゲート電極が設けられて成る事を特徴とする電界
効果型ジョセフソン・トランジスタ。(1) A field-effect Josephson transistor characterized in that a tunnel gap is provided in a superconductor film wiring provided on an insulating substrate, and a gate electrode is provided on the side surface of the tunnel gap. .
以上のトンネル・ギャップが設けられ、該２つ以上のト
ンネル・ギャップの側面には共通ゲート電極が設けられ
て成る事を特徴とする請求項１記載の電界効果型ジョセ
フソン・トランジスタ。(2) Two or more tunnel gaps are provided in the superconductor film wiring provided on the insulating substrate, and a common gate electrode is provided on the sides of the two or more tunnel gaps. 2. A field effect Josephson transistor according to claim 1.
Priority Applications (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP63272349A JPH02119189A (en) | 1988-10-28 | 1988-10-28 | Field-effect josephson transistor |
| FR898913548A FR2638569B1 (en) | 1988-10-25 | 1989-10-17 | JOSEPHSON FIELD-EFFECT TYPE TRANSISTOR AND METHOD FOR MANUFACTURING A JOSEPHSON JUNCTION |
| US07/423,969 US5071832A (en) | 1988-10-25 | 1989-10-19 | Field effect type josephson transistor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP63272349A JPH02119189A (en) | 1988-10-28 | 1988-10-28 | Field-effect josephson transistor |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH02119189A true JPH02119189A (en) | 1990-05-07 |
Family
ID=17512643
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP63272349A Pending JPH02119189A (en) | 1988-10-25 | 1988-10-28 | Field-effect josephson transistor |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH02119189A (en) |
-
1988
- 1988-10-28 JP JP63272349A patent/JPH02119189A/en active Pending
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