JPH02114680A - Field effect josephson transistor - Google Patents
Field effect josephson transistorInfo
- Publication number
- JPH02114680A JPH02114680A JP63268519A JP26851988A JPH02114680A JP H02114680 A JPH02114680 A JP H02114680A JP 63268519 A JP63268519 A JP 63268519A JP 26851988 A JP26851988 A JP 26851988A JP H02114680 A JPH02114680 A JP H02114680A
- Authority
- JP
- Japan
- Prior art keywords
- film
- tunnel
- field effect
- gate electrode
- josephson
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 230000005669 field effect Effects 0.000 title claims abstract description 12
- 239000000758 substrate Substances 0.000 claims abstract description 6
- 239000000919 ceramic Substances 0.000 abstract description 8
- 239000002887 superconductor Substances 0.000 abstract description 6
- 239000011521 glass Substances 0.000 abstract description 2
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 abstract 2
- 229910052593 corundum Inorganic materials 0.000 abstract 2
- 229910001845 yogo sapphire Inorganic materials 0.000 abstract 2
- -1 Si2N4 Inorganic materials 0.000 abstract 1
- 229910052581 Si3N4 Inorganic materials 0.000 abstract 1
- 229910020489 SiO3 Inorganic materials 0.000 abstract 1
- 238000005229 chemical vapour deposition Methods 0.000 abstract 1
- 238000004519 manufacturing process Methods 0.000 abstract 1
- 239000000463 material Substances 0.000 abstract 1
- 238000000034 method Methods 0.000 abstract 1
- 230000005668 Josephson effect Effects 0.000 description 3
- 239000011229 interlayer Substances 0.000 description 2
- 239000003795 chemical substances by application Substances 0.000 description 1
- 239000003989 dielectric material Substances 0.000 description 1
- 239000010410 layer Substances 0.000 description 1
Abstract
Description
【発明の詳細な説明】
〔産業上の利用分野１
本発明は、電界効果型ジョセフソン・トランジスタの構
造に関する。DETAILED DESCRIPTION OF THE INVENTION [Industrial Field of Application 1] The present invention relates to the structure of a field-effect Josephson transistor.
〔従来の技術ｊ
従来、ジョセフソン効果を用いたダイオードは有ったが
、トランジスタはなかった。[Prior art j] Conventionally, there have been diodes that use the Josephson effect, but there have been no transistors.
〔発明が解決しようとする課題１
しかし、上記従来技術によると集積回路化が困難である
という課題があった。[Problem to be Solved by the Invention 1] However, the above-mentioned conventional technology has a problem in that it is difficult to integrate the circuit into an integrated circuit.
本発明は、かかる従来技術の課題を解決し、ジョセフソ
ン効果を用いた電界効果型トランジスタ構造を提供する
ことを目的とすると共に、該電界効果型ジョセフソン・
トランジスタを集積回路に用いた場合に量産性ある構造
を提供する事も目的とする。The present invention aims to solve the problems of the prior art and provide a field effect transistor structure using the Josephson effect, and also to provide a field effect transistor structure using the Josephson effect.
Another purpose is to provide a structure that can be mass-produced when transistors are used in integrated circuits.
【課題を解決するための手段ｌ
上記課題を解決するために本発明は電界効果型ジョセフ
ソン・トランジスタに関し、絶縁基板にゲート電極を形
成し、該ゲート電極表面にソース及びドレイン電極のト
ンネルギャップを設け、該トンネルギャップ内にトンネ
ル膜を形成する手段をとる。[Means for Solving the Problems] In order to solve the above problems, the present invention relates to a field-effect Josephson transistor, in which a gate electrode is formed on an insulating substrate, and tunnel gaps for source and drain electrodes are formed on the surface of the gate electrode. A means is provided to form a tunnel film within the tunnel gap.
〔実 施 例］ 以下、実施例により、本発明を詳述する。〔Example] Hereinafter, the present invention will be explained in detail with reference to Examples.
第１図は本発明の一実施例を示す電界効果型ジョセフソ
ン・トランジスタの断面図である。すなわち、ガラスあ
るいはセラミック等から成る絶縁基板１の表面にＹ＋
Ｂａｇ Ｃｕｓ Ｏｔ等のセラミック系超電導体膜から
成るゲート電極２を形成し、次でＣＶＤ法により、５ｉ
ｎｓ 、Ｓｉｓ Ｎ４あるいはＡｌｔｏｎ等から成る誘
電体１ＩＩ３を形成し１次でセラミック系超電導体膜か
ら成るソース電極４を形成し、該ソース電極４の表面に
は、ＣＶＤ Ｓ １０ ｍ 、５１ ＊ Ｎａあ４い
は、ＡｌｚＯｌから成る層間絶縁膜５を形成し、前記ソ
ース電極４の前記ゲート電極２上の側壁には、ＣＶＤ５
ｉｆｔ 、Ｓｉｓ Ｎ４あるいは、Ａｌｔｏｎ等から成
る２ｍｍ厚さ程度のトンネル膜６を形成し。FIG. 1 is a sectional view of a field effect type Josephson transistor showing one embodiment of the present invention. That is, Y+ is formed on the surface of the insulating substrate 1 made of glass or ceramic.
A gate electrode 2 made of a ceramic superconductor film such as Bag Cus Ot is formed, and then a 5i film is formed by CVD.
A dielectric material 1II3 made of ns, Sis N4, Alton, etc. is formed, and a source electrode 4 made of a ceramic superconductor film is formed as a primary layer. 4, an interlayer insulating film 5 made of AlzOl is formed, and a side wall of the source electrode 4 on the gate electrode 2 is coated with CVD 5.
A tunnel film 6 made of ift, Sis N4, Alton, etc. and having a thickness of about 2 mm is formed.
次でセラミック系超電導体膜から成るドレイン電極７を
前記トンネル膜６をソース電極４との間にはさむ様な形
で形成して成る。Next, a drain electrode 7 made of a ceramic superconductor film is formed such that the tunnel film 6 is sandwiched between the source electrode 4 and the drain electrode 7 .
〔発明の効果］
本発明により量産性のある、集積回路に向いた電界効果
型ジョセフソン・トランジスタが形成できる効果がある
。[Effects of the Invention] The present invention has the advantage that a field-effect Josephson transistor that can be mass-produced and is suitable for integrated circuits can be formed.
第１図は本発明の一実施例を示す電界効果型ジョセフソ
ン・トランジスタの断面図である８絶縁基板
ゲート電極
誘電体膜
ソース電極
層間絶縁膜
トンネル膜
ドレイン電極
出願人 セイコーエプソン株式会社
代理人 弁理士 上 柳 雅 誉（他１名）FIG. 1 is a cross-sectional view of a field-effect Josephson transistor showing an embodiment of the present invention.8 Insulating substrate Gate electrode Dielectric film Source electrode Interlayer insulating film Tunnel film Drain electrode Applicant Seiko Epson Corporation Agent Patent attorney Masataka Kamiyanagi (1 other person)
Claims (1)
表面にはソース及びドレイン電極の、トンネルギャップ
が設けられ、該トンネルギャップ内はトンネル膜が形成
されて成る事を特徴とする電界効果型ジョセフソン・ト
ランジスタ。A field effect type characterized in that a gate electrode is formed on an insulating substrate, a tunnel gap for source and drain electrodes is provided on the surface of the gate electrode, and a tunnel film is formed within the tunnel gap. Josephson transistor.
Priority Applications (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP63268519A JPH02114680A (en) | 1988-10-25 | 1988-10-25 | Field effect josephson transistor |
| FR898913548A FR2638569B1 (en) | 1988-10-25 | 1989-10-17 | JOSEPHSON FIELD-EFFECT TYPE TRANSISTOR AND METHOD FOR MANUFACTURING A JOSEPHSON JUNCTION |
| US07/423,969 US5071832A (en) | 1988-10-25 | 1989-10-19 | Field effect type josephson transistor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP63268519A JPH02114680A (en) | 1988-10-25 | 1988-10-25 | Field effect josephson transistor |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH02114680A true JPH02114680A (en) | 1990-04-26 |
Family
ID=17459645
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP63268519A Pending JPH02114680A (en) | 1988-10-25 | 1988-10-25 | Field effect josephson transistor |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH02114680A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US10506670B2 (en) | 2011-04-25 | 2019-12-10 | Graphic Packaging International, Llc | Microwave energy interactive pouches |
-
1988
- 1988-10-25 JP JP63268519A patent/JPH02114680A/en active Pending
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US10506670B2 (en) | 2011-04-25 | 2019-12-10 | Graphic Packaging International, Llc | Microwave energy interactive pouches |
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