JPH02118405A - Fine dimension measuring device - Google Patents
Fine dimension measuring deviceInfo
- Publication number
- JPH02118405A JPH02118405A JP27223688A JP27223688A JPH02118405A JP H02118405 A JPH02118405 A JP H02118405A JP 27223688 A JP27223688 A JP 27223688A JP 27223688 A JP27223688 A JP 27223688A JP H02118405 A JPH02118405 A JP H02118405A
- Authority
- JP
- Japan
- Prior art keywords
- stage
- measurement
- focusing position
- wafer
- objective lens
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000005259 measurement Methods 0.000 claims abstract description 21
- 239000004065 semiconductor Substances 0.000 claims abstract description 11
- 230000003287 optical effect Effects 0.000 claims description 10
- 238000004364 calculation method Methods 0.000 claims description 5
- 238000000034 method Methods 0.000 claims description 2
- 238000010586 diagram Methods 0.000 description 4
- 239000011229 interlayer Substances 0.000 description 2
- 239000000758 substrate Substances 0.000 description 2
- 239000006185 dispersion Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
Abstract
Description
【発明の詳細な説明】
〔産業上の利用分野〕
本発明は半導体装置の製造工程において用いられる自動
焦点位置決め機能を有する微小寸法測定装置に関する。DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to a minute dimension measuring device having an automatic focus positioning function used in the manufacturing process of semiconductor devices.
従来、この種の対物レンズの自動焦点位置決め機能を有
する微小寸法測定装置を用い、半導体つ工−ハ(以下単
にウェーハという)上の配線の幅を測定、しようとした
場合、最適焦点位置は、測定対象とする配線を中心とす
る視野におけるウェー八表面上の凹凸の平均的な高さの
位置に合わさるようになっていた。Conventionally, when attempting to measure the width of wiring on a semiconductor wafer (hereinafter simply referred to as a wafer) using a micro-dimensional measuring device that has an automatic focus positioning function for this type of objective lens, the optimal focal position is: The height was set to match the average height of the unevenness on the surface of the wafer in the field of view centered on the wiring to be measured.
上述した従来の自動最適焦点の決定法を用いた微小寸法
測定装置では、ウェーハ上の対象物であるパターンを測
定した場合、ウェーハの表面の高さは微細視すると第4
図に示すように、半導体基板20上には層間絶縁膜21
や配線22が形成されていて一様ではないため、微小寸
法測定装置が決定した最適焦点位置の目的とするデバイ
スパターンの測定箇所に対する最適焦点位置にはずれが
生じ、得られた測定値の精度が劣るといつな欠点があっ
た。In the micro-dimensional measuring device using the conventional automatic optimal focus determination method described above, when measuring a pattern as an object on a wafer, the height of the wafer surface is microscopically
As shown in the figure, an interlayer insulating film 21 is formed on the semiconductor substrate 20.
Because the wires and wiring 22 are formed and are not uniform, the optimum focus position determined by the micro-dimensional measuring device may deviate from the target measurement point of the device pattern, and the accuracy of the obtained measurement value may deteriorate. There were always drawbacks when it was inferior.
本発明の微小寸法測定装置は、半導体ウェーハを載置す
るステージと、前記半導体ウェーハ上のパターンを測定
するための対物レンズを有する測定部と、前記測定部か
らの信号を処理しパターン寸法を演算する演算処理部と
、前記演算処理部からの信号により前記ステージまたは
対物レンズを光軸方向に段階的に移動させるように制御
する制御部とを含んで構成される。The micro-dimensional measuring device of the present invention includes a stage on which a semiconductor wafer is placed, a measuring section having an objective lens for measuring a pattern on the semiconductor wafer, and processing signals from the measuring section to calculate pattern dimensions. and a control section that controls the stage or objective lens to move stepwise in the optical axis direction based on signals from the arithmetic processing section.
次に本発明について図面を参照して説明する。 Next, the present invention will be explained with reference to the drawings.
第1図は、本発明の第1の実施例のブロック図である。FIG. 1 is a block diagram of a first embodiment of the invention.
第1図において、ウェーハ4は光軸方向に段階的に移動
できるステージ5の上に載せられており、このウェーハ
4の光軸方向上部には、光センサ2と共に測定部を構成
する対物レンズ1が設けられている。ウェーハ4上の測
定対象の配線等のパターンの情報は、対物レンズ1を通
して光センサ−2へ送られて電気信号に変換される。電
気信号に変換されたパターンの情報は、演算処理部8へ
送られ、測定値の平均値およびばらつき等の統計計算が
行なわれる。その結果は中央制御部9へ転送されステー
ジの駆動の判定が行なわれる。中央制御部9で判定した
結果はステージ制御部10に転送され、そこからステー
ジ駆動部6にステージを駆動する信号が送られ、ステー
ジ駆動部6は中央制御部で判定された方向と移動量でス
テージを光軸方向に移動させる。In FIG. 1, a wafer 4 is placed on a stage 5 that can be moved stepwise in the optical axis direction, and an objective lens 1 that constitutes a measuring section together with an optical sensor 2 is placed above the wafer 4 in the optical axis direction. is provided. Information on patterns such as wiring to be measured on the wafer 4 is sent to the optical sensor 2 through the objective lens 1 and converted into an electrical signal. The pattern information converted into an electrical signal is sent to the arithmetic processing section 8, where statistical calculations such as the average value and dispersion of the measured values are performed. The results are transferred to the central control unit 9, where stage drive is determined. The results determined by the central control unit 9 are transferred to the stage control unit 10, which sends a signal to the stage drive unit 6 to drive the stage, and the stage drive unit 6 moves in the direction and amount of movement determined by the central control unit. Move the stage in the optical axis direction.
次に測定動作について説明する。第2図はステージ5の
動作を説明するための対物レンズとウェーハの側面図で
ある。測定されるウェーハ4はステージ5の上に載せら
れている。Next, the measurement operation will be explained. FIG. 2 is a side view of the objective lens and wafer for explaining the operation of the stage 5. A wafer 4 to be measured is placed on a stage 5.
最初に第2図に示す高さHlの焦点位置で、ウェーハ4
の同一部分のパターン寸法の測定が複数回数行なわれる
。測定値は1回の測定が終了する都度演算処理部8に転
送されて処理されたのち、同一焦点位置に対する繰り返
し測定の再現精度が記憶される。Hlの焦点位置での測
定が終了したら、中央制御部9を介してステージ制御部
10より駆動信号が送られ、ステージ駆動部6によりス
テージ5はH2の高さの焦点位置に移動する。H2にお
いてHlの焦点位置と同様にして複数回数の測定が行な
われ、H2における繰り返し測定の再現精度が算出され
記憶される。以下同様に任意のn回繰り返して各焦点位
置で測定が行なわれる。そして、各焦点位置で測定され
記憶された繰り返し測定の再現精度の中から最も再現性
の良い焦点位置が演算処理部8で選定され、焦点位置が
決定される。このようにして選びだされた焦点位置にな
るように、中央制御部9からステージ制御部10を介し
てステージ駆動部6へ信号が送られ、最適焦点位置にウ
ェーハ4はセットされ、ウェーハ内の各点に対し寸法測
定が開始される。First, the wafer 4 is placed at the focal point at the height Hl shown in FIG.
The pattern dimensions of the same portion of the pattern are measured multiple times. The measured values are transferred to the arithmetic processing unit 8 and processed each time one measurement is completed, and then the reproducibility accuracy of repeated measurements for the same focal position is stored. When the measurement at the focal position of H1 is completed, a drive signal is sent from the stage control unit 10 via the central control unit 9, and the stage driving unit 6 moves the stage 5 to the focal position at the height of H2. In H2, measurements are performed a plurality of times in the same way as the focal position of Hl, and the repeatability of the repeated measurements in H2 is calculated and stored. Thereafter, measurements are similarly performed at each focal position by repeating an arbitrary n number of times. Then, the arithmetic processing unit 8 selects the focal position with the best reproducibility from among the reproducibility of repeated measurements measured and stored at each focal position, and the focal position is determined. A signal is sent from the central control unit 9 to the stage drive unit 6 via the stage control unit 10 so that the focus position selected in this way is set, and the wafer 4 is set at the optimum focus position. Dimension measurements are started for each point.
このように第1の実施例によれば、測定対象とするパタ
ーンの測定再現精度の最も良い焦点位置を選定すること
ができるので、測定値の精度は向上したものとなる。As described above, according to the first embodiment, it is possible to select the focal position with the best measurement reproducibility of the pattern to be measured, so that the accuracy of the measured value is improved.
第3図は本発明の第2の実施例のブロック図であり、第
1の実施□例と異なる所は、ステージ駆動部の代りに対
物レンズ駆動部7を設け、対物レンズ1の移動により焦
点位置を定めるようにした所にある。FIG. 3 is a block diagram of the second embodiment of the present invention. The difference from the first embodiment is that an objective lens drive section 7 is provided instead of the stage drive section, and the movement of the objective lens 1 causes the focus to be focused. It is located where the position is determined.
すなわち、対物レンズ1は対物レンズを光軸方向に移動
させる対物レンズ駆動部7に取り付けられている。第1
の実施例と同様に、中央制御部9からの指令で対物レン
ズ制御部11は対物レンズ駆動部7に制御信号を送り段
階的に対物レンズの焦点位置を移動させる。That is, the objective lens 1 is attached to an objective lens drive section 7 that moves the objective lens in the optical axis direction. 1st
Similarly to the embodiment, the objective lens control section 11 sends a control signal to the objective lens drive section 7 in response to a command from the central control section 9 to move the focal position of the objective lens stepwise.
この第2の実施例では対物レンズ側に駆動部を設けであ
るために、ステージ側の機構を簡単にできる利点がある
。In this second embodiment, since the driving section is provided on the objective lens side, there is an advantage that the mechanism on the stage side can be simplified.
以上説明したように本発明は、微小寸法測定装置を半導
体ウェーハを載置するステージと、半導体ウェーハ上の
パターンを測定するための対物レンズを有する測定部と
、この測定部からの信号を処理しパターン寸法を演算す
る演算処理部と、この演算処理部からの信号により前記
ステージまたは対物レンズを光軸方向に段階的に移動さ
せるように制御する制御部とにより構成することによリ
、最も再現精度の良い焦点位置を決定することができる
なめ、パターンの測定精度を著しく向上させることがで
きる。As explained above, the present invention includes a micro-dimensional measuring device that includes a stage on which a semiconductor wafer is placed, a measuring section having an objective lens for measuring a pattern on the semiconductor wafer, and a signal from this measuring section. By comprising a calculation processing unit that calculates pattern dimensions and a control unit that controls the stage or objective lens to move stepwise in the optical axis direction based on signals from this calculation processing unit, it is possible to achieve maximum reproduction. Since the focal position can be determined with high precision, pattern measurement accuracy can be significantly improved.
第1図は本発明の第1の実施例のブロック図、第2図は
ステージの動作を説明するための対物レンズとウェーハ
の側面図、第3図は本発明の第2の実施例のブロック図
、第4図はウェーハの一例の断面図である。
1・・・対物レンズ、2・・・光センサ−,4・・・ウ
ェーハ、5・・・ステージ、6・・・ステージ駆動部、
7・・・対物レンズ駆動部、8・・・演算処理部、9・
・・中央制御部、10・・・ステージ制御部、11・・
・対物レンズ駆動部、20・・・半導体基板、21・・
・層間絶縁膜、22・・・配線。Fig. 1 is a block diagram of the first embodiment of the present invention, Fig. 2 is a side view of the objective lens and wafer for explaining the operation of the stage, and Fig. 3 is a block diagram of the second embodiment of the invention. FIG. 4 is a cross-sectional view of an example of a wafer. DESCRIPTION OF SYMBOLS 1... Objective lens, 2... Optical sensor, 4... Wafer, 5... Stage, 6... Stage drive unit,
7... Objective lens drive section, 8... Arithmetic processing section, 9.
... Central control section, 10... Stage control section, 11...
- Objective lens drive unit, 20... semiconductor substrate, 21...
- Interlayer insulating film, 22... wiring.
Claims (1)
ーハ上のパターンを測定するための対物レンズを有する
測定部と、前記測定部からの信号を処理しパターン寸法
を演算する演算処理部と、前記演算処理部からの信号に
より前記ステージまたは対物レンズを光軸方向に段階的
に移動させるように制御する制御部とを含むことを特徴
とする微小寸法測定装置。a stage on which a semiconductor wafer is placed; a measurement section having an objective lens for measuring a pattern on the semiconductor wafer; a calculation processing section that processes signals from the measurement section and calculates pattern dimensions; and the calculation processing. and a control section that controls the stage or objective lens to move stepwise in the optical axis direction based on signals from the micro-dimensional measuring device.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP27223688A JPH02118405A (en) | 1988-10-27 | 1988-10-27 | Fine dimension measuring device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP27223688A JPH02118405A (en) | 1988-10-27 | 1988-10-27 | Fine dimension measuring device |
Publications (1)
Publication Number | Publication Date |
---|---|
JPH02118405A true JPH02118405A (en) | 1990-05-02 |
Family
ID=17511021
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP27223688A Pending JPH02118405A (en) | 1988-10-27 | 1988-10-27 | Fine dimension measuring device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPH02118405A (en) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5627215A (en) * | 1993-12-27 | 1997-05-06 | Ciba-Geigy Corporation | Unsaturate amino compounds for use as anticancer and antiprotozoic agent |
JP2004333584A (en) * | 2003-04-30 | 2004-11-25 | Nec Corp | Method for controlling focus position in reticle inspection apparatus |
-
1988
- 1988-10-27 JP JP27223688A patent/JPH02118405A/en active Pending
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5627215A (en) * | 1993-12-27 | 1997-05-06 | Ciba-Geigy Corporation | Unsaturate amino compounds for use as anticancer and antiprotozoic agent |
JP2004333584A (en) * | 2003-04-30 | 2004-11-25 | Nec Corp | Method for controlling focus position in reticle inspection apparatus |
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